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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 馮哲川 | |
| dc.contributor.author | Tse-Yang Lin | en |
| dc.contributor.author | 林澤暘 | zh_TW |
| dc.date.accessioned | 2021-06-15T04:01:03Z | - |
| dc.date.available | 2010-03-10 | |
| dc.date.copyright | 2010-03-10 | |
| dc.date.issued | 2010 | |
| dc.date.submitted | 2010-02-22 | |
| dc.identifier.citation | References
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/45005 | - |
| dc.description.abstract | 本論文旨在探討三族氮化物半導體和氧化鋅半導體的光學與電學性質，研究的樣品包括氮化銦鎵發光二極體、氮化鋁鎵薄膜結構和氧化鋅薄膜掺銅結構,內容主要分為三部份 :
（1）氮化鋁鎵三元薄膜結構的光電性質： 我們使用兩組不同的樣品來探討氮化鋁鎵的光電性質。第一組樣品為高鋁樣品,兩個樣品有不同成份的鋁掺雜.第二組的三個樣品則是在製程時加進了不同流動比率的銦.首先透過X光繞射, 拉塞福背向散射及電子束電子顯微鏡等實驗來測定樣品的組成成份及厚度。由光激螢光光譜之溫度變化比較中，可以知道在光激螢光光譜中所觀察到的量子井相關訊號，並不完全是來自於能帶間躍遷的訊號，有一部分可能是來自於在氮化鋁鎵中鋁組成的不均勻性，造成位能波動起伏所形成的侷限態的躍遷訊號,拉曼光譜可以獲得分子的振動情形,透過分析,樣品的載子濃度可以被計算出,未來可以與霍爾量測做比較. （2）氮化銦鎵發光二極體的光電性質： 在第二部份中，我們討論的是擁有不同金屬襯底厚度的氮化銦鎵發光二極體的光電性質。由光激螢光光譜的溫度變化，我們發現氮化銦鎵量子井相關訊號存在著一個不尋常的發光現象。隨著溫度的上升，其峰值能量的改變呈現著一個S型的能量變化。利用能帶尾端侷限態之模型，即導電帶與價電帶尾端之狀態密度以高斯分佈來描述分析之。然後利用時間鑑別光激發光頻譜，來測定樣品的衰退時間。在變溫時間鑑別光激發光頻譜中,我們發現氮化銦鎵發光二極體樣品的衰退時間會隨著溫度上昇,有一個先升後降的趨勢. (3）氧化鋅掺銅薄膜結構的光電性質： 最後一部份,我們研究了三組成長條件不同的氧化鋅掺銅樣品,三組樣品在不同波長拉曼散射實驗中有很明顯的區別,此外實驗中也發現了多重縱模光聲子的存在,我們也將樣品拿至新竹同步輻射中心做了初步的X光吸收近邊緣結構光譜,以期了解氧化鋅掺銅樣品的空軌域電子組態及電子的躍遷情形. | zh_TW |
| dc.description.provenance | Made available in DSpace on 2021-06-15T04:01:03Z (GMT). No. of bitstreams: 1 ntu-99-R96941105-1.pdf: 2620062 bytes, checksum: eba107c2aebc24ed7ad564ecad14fe93 (MD5) Previous issue date: 2010 | en |
| dc.description.tableofcontents | Content
口試委員會審定書......................................................................................... 誌謝................................................................................................................. 摘要................................................................................................................I Abstract.......................................................................................................III Content.......................................................................................................VII Lists of Figures............................................................................................X Lists of Tables.........................................................................................XVII Chapter 1 Introduction 1.1. III-Nitride semiconductors…………………………………….…..1 1.2. Properties of AlGaN alloys………………………………………..3 1.3. Properties of InGaN………………………………………….……5 1.4. Properties of ZnO………………………. ………………………..7 Reference……………………………………………………………..10 Chapter 2 Experimental Details 2.1. Photoluminescence (PL)……....................................................14 2.1.1. PL Experimental Setup…………………...……………….21 2.2. Photoluminescence Excitation (PLE)………………………….22 2.2.1. Photoluminescence Excitation Experimental setup…………………………………………………….....24 2.3. High resolution X-ray diffraction (XRD)………………..….....25 2.4. Raman scattering………………………………………………28 Reference.........................................................................….................35 Chapter 3 AlGaN thin films grown by Metal Organic Chemical Vapor Deposition with different growth conditions 3.1 Sample Preparation and Structure…………….……………….37 3.2 High-resolution X-ray Diffraction Measurement……………...38 3.3 Rutherford Backscattering (RBS) measurement……................41 3.4 Scanning electron microscope and Energy-dispersive X-ray spectroscopy……………...........................................................46 3.5 Optical Measurement and analysis…………………………….48 3.5.1. PL Experimental Results………………………………….48 3.5.2. Optical Transmission measurement……………………....59 3.6 Raman scattering (RS)…………………………………………60 3.6.1. Basic RS Characteristics of MOCVD-Grown AlGaN/Sapphir………………………………..…………..60 3.6.2. Raman Determination of Carrier Concentration………….62 3.7 Summary…………………………………………………….…66 Reference..............................................................................................67 Chapter 4 Optical Properties and Material Studies of Different High brightness GaN vertical light emitting diodes on metal alloyed substrate 4.1. Sample Information……………………….……………….…..69 4.2. Optical Measurement and analysis………………….………....72 4.2.1. PL Experimental Results………….…………………..…..72 4.2.2. TRPL Experimental Results………….…………………...83 4.3. Summary……………………………………………………....90 Reference………………………………………………………….….92 Chapter 5 Studies on the properties of sputter-deposited Cu-doped ZnO films 5.1 Sample information………………………… ……………..….96 5.2 Combined UV RS and PL………...…………………………...97 5.3 Fisk 532 Raman………………………………………………101 5.4 Synchrotron Radiation……………………………..................103 5.4.1. Synchrotron Radiation Beamline End Station…………...103 5.4.2. X-Ray absorption near-edge structure (XANES) Result………………………………………………….…106 5.5 Summary…………………………………………………..….108 Reference…………………………………………………………....110 Appendix……………………………………………………………111 Raman 532 at EE452…………………………………………..111 PL377nm ...................................................................…............113 NSRRC 20A O K-edge………………………………………...116 | |
| dc.language.iso | zh-TW | |
| dc.subject | 氧化鋅 | zh_TW |
| dc.subject | 氮化鋁鎵 | zh_TW |
| dc.subject | 氮化銦鎵 | zh_TW |
| dc.subject | ZnO | en |
| dc.subject | InGaN | en |
| dc.subject | AlGaN | en |
| dc.title | 寬能隙半導體：氮化銦鎵發光二極體、氮化鋁鎵和氧化鋅薄膜之量測分析與研究 | zh_TW |
| dc.title | Wide band gap semiconductors:
Measurement and analysis of InGaN-LEDs, AlGaN and ZnO Thin films | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 98-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 李粵堅,朱振甫 | |
| dc.subject.keyword | 氮化銦鎵,氮化鋁鎵,氧化鋅, | zh_TW |
| dc.subject.keyword | InGaN,AlGaN,ZnO, | en |
| dc.relation.page | 117 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2010-02-23 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-99-1.pdf 未授權公開取用 | 2.56 MB | Adobe PDF |
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