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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 翁宗賢(Tzong-Shyan Wung) | |
| dc.contributor.author | Chen-Sheng Lin | en |
| dc.contributor.author | 林振昇 | zh_TW |
| dc.date.accessioned | 2021-06-15T04:00:41Z | - |
| dc.date.available | 2015-03-10 | |
| dc.date.copyright | 2010-03-10 | |
| dc.date.issued | 2010 | |
| dc.date.submitted | 2010-02-24 | |
| dc.identifier.citation | 參考文獻
[1] D. A. Benson, M. E. Larsen, A. M. Renlund, W. M. Trott, and R. W. Bickes, Jr., “Semiconductor Bridge: A Plasma Generator for the Ignition of Explosives,” J. Appl. Phys. 62(5), 1 September 1987. [2] D. A. Benson, R. W. Bickes, Jr., and R. S. Blewer, Tungsten Bridge for Low Energy Ignition of Explosive and Energetic Materials, US Patent 4976200, Dec. 1990. [3] J. K. Hartman, McCampbell, and B. Carroll, Zener Diode for Protection of Semiconductor Explosive Bridge, US Patent 5179248, Jan. 1993. [4] T. A. Baginski, S. L. Taliaferro, and W. D. Fahey, “Novel Electro-Explosive Device Incorporating a Reactive Laminated Metallic Bridge,” Journal of Propulsion and Power, Vol.17 184-189, 2001. [5] K. N. Lee, M. I. Park, S.H. Choi, C. O. Park, and H. S. Uhm, “Characteristics of Plasma Generated by Poly-Silicon Semiconductor Bridge (SCB),” Sensors and Actuators A: Phys. Vol. 96 252-257, 2002. [6] T. A. Baginski, “The Semiconductor Junction Igniter：A Novel RF and ESD Insensitive Electro-Explosive Device,” IEEE Transactions On Industry Applications, Vol. 29 No. 2, March, 1993. [7] H. H. Dibiaso, B. A. English, and M. G. Allen, “Solid-Phase Conductive Fuels for Chemical Micro-Actuators,” Sensors and Actuators A: Phys. Vol.111,260-266, 2004. [8] 邱宏昇,金屬薄膜點火晶片設計模擬,國立台灣大學應用力學研究所碩士論文,2004年. [9] 洪誌隆, 低能量固態點火晶片用於含能材料觸發裝置之設計與研製, 國立台灣大學應用力學研究所碩士論文,2006年. - 63 - [10] 邱銘漢, 抗震點火晶片研製, 國立台灣大學應用力學研究所博士論文,2008. [11] Jaeger, R. C., Introduction to Microelectronic Fabrication, AddisonWesley Pub. Co., Reading, MA, 1988. [12] Hong Xiao, Introduction to Semiconductor Manufacturing Technology, Prentice-Hall, Inc., 2001. [13] D. A. Neamen, Semiconductor Physics and Devices, Mcgraw-Hall, Inc.,2003 [14] Albert A. H. Wang, On-Chip ESD Protection For Integrated Circuits：An IC Design Perspective, Kluwer Academic Pub., 2002. [15] 施敏, 半導體元件物理與製作技術(第二版), 國立交通大學出版社, 2002年. [16] 施敏, 伍國,半導體元件物理學, 國立交通大學出版社, 2008年. [17] 鄭群星, 電腦輔助電子電路設計, 全華圖書股份有限公司, 2008年. [18] 盧勤庸, 電子電路模擬, 全華圖書股份有限公司, 2007年. [19] 李郁偉, 微型高功率點火裝置之設計與製作, 國立台灣大學機械工程研究所 碩士論文, 2002年. [20] S. I. Cha, Y. H. Cho, Y. I. Choi and S. K. Chung,“Novel Schottky Diode With Self-Aligned Guard Ring,” Electronics Letters 18th, Vol. 28 No. 13, June, 1992. [21] 黃素珍, 陳怡甄, 抗靜電/導電性材料最新發展趨勢及商機探討, 工業技術研究院產業經濟與資訊服務中心, 2005年. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/44994 | - |
| dc.description.abstract | 微型點火晶片是一種具發火能量低、啟爆時間短且可靠度高的引燃器，如今已被廣泛應用於汽車、航空及國防工業。本文改良點火晶片的結構設計，除了讓點火晶片仍然可以低能快速發火外，同時讓它具有抗靜電的效果，使得點火晶片在使用上更加安全無虞。
本文的研製成品主要是利用微機電製程製作。研製的過程是在矽晶圓上製作出金屬薄膜電橋，再利用半導體技術在金電橋下製作出與電橋並聯的兩對向二極體。當晶片接觸到高壓靜電時，靜電荷可以藉由二極體的崩潰將電流傳至電橋下方的二極體迴路，以防電橋通過過量的電流而發熱誤燃。在做實驗的同時，本文也利用電子電路模擬軟體Pspice，驗證本點火晶片的結構設計是否可以在25kV的靜電放電模式下具有抗靜電的效果。模擬結果顯示改良過的晶片確實可以成功降低靜電在電橋產生的焦耳熱。 製成電橋晶片後，本文利用以高壓電容組成的擬靜電放電電路對晶片放電，測詴其是否可以承受高壓靜電且不發火。另外，在電橋的發火時間量測上，本文利用高敏感度的光二極體來接收發火訊號，藉由光二極的電壓變化判讀本晶片在低壓點火下的發火時間。 實驗結果顯示，本文所設計的晶片均能通過擬靜電放電的測詴，可以承受高壓放電而不發火，且晶片連續經過20次靜電放電亦不點燃，電橋電阻也只有些微的上升。此外，本晶片的發火非常快速，在35V、33μF的電容放電下，帄均只需要約1.5μs即可以發火。總合以上所有結果，本文所設計的微型點火晶片在量測上確實可以同時達到抗靜電及低能快速發火。 | zh_TW |
| dc.description.abstract | MEMS igniting chip is an outstanding electro-actuating device with low initiating energy, great igniting power, and high stability. Nowadays, MEMS igniting chip has been widely applied to various fields, such as automobile, aeronautics, and defense industries. In this thesis, the modified igniting chips which could both sustain electro-static discharges and satisfy the demand of low-energy ignition are investigated.
The anti-static-charge ignition chips were fabricated via MEMS technologies. On a silicon wafer, the metal bridge was overlaid on the two opposite-direction diodes to form the integrated chip. By doing so, when electro-static charges apply to the chip, the static charge current could flow through diodes instead of the metal bridge, consequently preventing the unexpected igniting. Besides, in order to test whether the ignition chip possesses the anti-static-charge capability or not, the simulation software Pspice for electronic circuits was used to verify its performance: The results evidence that anti-static-charge ignition chip could successfully reduce the heat generated on the metal bridge. In experiments, a discharging circuit with a high-voltage was constructed carry out the measurement of static charge discharging. Moreover, by using a sensitive photodiode to detect the ignition sparkling, the signal of photodiode evidence the ignition time of the anti-static-charge ignition chip when excited by a low voltage of 35 V charged in a 33μF capacitor. In summary, the result indicated that the anti-static-charge ignition chip could release static-electro discharges, without being ignited by static electricity. Meanwhile, it could be ignited with low energy in a short time, and the activating time is 1.5μs on average. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T04:00:41Z (GMT). No. of bitstreams: 1 ntu-99-R96543004-1.pdf: 2479803 bytes, checksum: cea03655d258b65150cf3c14c03445f9 (MD5) Previous issue date: 2010 | en |
| dc.description.tableofcontents | 目錄
摘要 ................................................................................................................................ II ABSTRACT .................................................................................................................. III 圖目錄 .......................................................................................................................... VII 表目錄 .............................................................................................................................. X 符號說明 ........................................................................................................................ XI 第一章 序論 .............................................................................................................. 1 1- 1 引言 .................................................................................................................. 1 1- 2 文獻回顧 .......................................................................................................... 2 1- 3 研究動機與本文內容 ...................................................................................... 4 第二章 抗靜電點火晶片運作原理 ........................................................................ 10 2- 1 電熱原理與熱傳遞 ........................................................................................ 10 2-1-1 電熱原理 ................................................................................................ 10 2-1-2 晶片上的熱傳遞 ..................................................................................... 11 2- 2 電容放電 ........................................................................................................ 12 2- 3 金屬半導體接觸的電特性 ............................................................................ 13 2-3-1 蕭基位障 (schottky barrier) 的形成 .................................................... 13 2-3-2 電流傳輸過程 ........................................................................................ 15 2- 4 點火晶片之靜電防護邏輯 ............................................................................ 15 2-4-1 靜電 ........................................................................................................ 15 2-4-2 靜電防護 ................................................................................................ 16 - V - 第三章 抗靜電點火晶片之設計與製作 ................................................................ 22 3- 1 光罩設計 ........................................................................................................ 22 3- 2 第一道光罩製程(製作二極體)...................................................................... 23 3-2-1 熱氧化製程 ............................................................................................ 23 3-2-2 黃光製程 ................................................................................................ 24 3-2-3 二氧化矽濕蝕刻(Wet Etch) ................................................................... 25 3-2-4 離子佈值(Ion Implantation) ................................................................... 26 3-2-5 電子束蒸鍍薄膜(鋁) ............................................................................. 27 3-2-6 光阻掀舉 ................................................................................................ 27 3-2-7 高溫爐加熱退火、晶圓切割 ................................................................ 28 3- 3 第二道光罩製程(製作金屬電橋).................................................................. 28 3-3-1 黃光製程 ................................................................................................ 29 3-3-2 電子束蒸鍍金薄膜 ................................................................................ 29 3-3-3 光阻掀舉、晶圓切割 ............................................................................ 29 3- 4 第三道光罩製程：鍍上含能材料鋯 ............................................................ 29 3-4-1 黃光製程 ................................................................................................ 30 3-4-2 電子束蒸鍍鋯薄膜 ................................................................................ 30 3-4-3 去光阻、晶圓切割 ................................................................................ 30 第四章 電子電路模擬 ............................................................................................ 41 4- 1 軟體介紹 ........................................................................................................ 41 4- 2 本實驗之電路模擬圖 .................................................................................... 41 4- 3 模擬結果 ........................................................................................................ 42 第五章 實驗量測與結果討論 ................................................................................ 46 5- 1 實驗量測架構 ................................................................................................ 46 - VI - 5-1-1 二極體之I-V曲線量測 ......................................................................... 46 5-1-2 低壓點火時間量測 ................................................................................ 47 5-1-3 高壓放電點火量測 ................................................................................ 47 5- 2 結果與討論 .................................................................................................... 48 5-2-1 電橋電阻實驗結果 ................................................................................ 48 5-2-2 二極體之特性曲線 ................................................................................ 48 5-2-3 點火晶片之點火時間 ............................................................................ 49 5-2-4 靜電放電測詴結果 ................................................................................ 49 5-2-5 含能材料對點火能力之影響 ................................................................ 50 第六章 結論與未來展望 ........................................................................................ 60 6- 1 結論 ................................................................................................................ 60 6- 2 未來展望 ........................................................................................................ 61 參考文獻 ........................................................................................................................ 62 | |
| dc.language.iso | zh-TW | |
| dc.subject | 低能快速發火 | zh_TW |
| dc.subject | 金屬薄膜電橋 | zh_TW |
| dc.subject | 抗靜電點火晶片 | zh_TW |
| dc.subject | 微機電製程 | zh_TW |
| dc.subject | metal bridg | en |
| dc.subject | MEMS process | en |
| dc.subject | ignition chip | en |
| dc.subject | Anti-static-charge | en |
| dc.title | 抗靜電點火晶片之設計與研製 | zh_TW |
| dc.title | On The Design and Fabrication of Anti-static-charge
Ignition Chip | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 98-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 張家歐(Chia-Ou Chang),張正憲(Jeng-Shian Chang),邱銘漢(Min-Han Chiu) | |
| dc.subject.keyword | 抗靜電點火晶片,金屬薄膜電橋,低能快速發火,微機電製程, | zh_TW |
| dc.subject.keyword | Anti-static-charge,ignition chip,metal bridg,MEMS process, | en |
| dc.relation.page | 63 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2010-02-24 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 應用力學研究所 | zh_TW |
| 顯示於系所單位： | 應用力學研究所 | |
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