請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/43820
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 黃建璋(JianJang Huang) | |
dc.contributor.author | Chun-Hsiang Chang | en |
dc.contributor.author | 張鈞翔 | zh_TW |
dc.date.accessioned | 2021-06-15T02:29:36Z | - |
dc.date.available | 2012-08-19 | |
dc.date.copyright | 2011-08-19 | |
dc.date.issued | 2011 | |
dc.date.submitted | 2011-08-16 | |
dc.identifier.citation | [1] X. Cao, S. LeBoeuf, L. Rowland, C. Yan and H. Liu 2003 Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes Applied Physics Letters 82 3614
[2] H. Chang, Y. Hsieh, T. Chen, Y. Chen, C. Liang, T. Lin, S. Tseng and L. Chen 2003 Strong luminescence from strain relaxed InGaN/GaN nanotips for highly efficient light emitters Appl. Phys. Lett 82 880-2 [3] H. J. Chang, Y. P. Hsieh, T. T. Chen, Y. F. Chen, C. T. Liang, T. Y. Lin, S. C. Tseng and L. C. Chen 2007 Strong luminescence from strain relaxed InGaN/GaN nanotips for highly efficient light emitters Opt. Express 15 9357-65 [4] C. H. Chen, W. H. Chen, Y. F. Chen and T. Y. Lin 2003 Piezoelectric, electro-optical, and photoelastic effects in In[sub x]Ga[sub 1 - x]N/GaN multiple quantum wells Applied Physics Letters 83 1770-2 [5] H. Chen, D. Yeh, Y. Lu, C. Chen, C. Huang, T. Tang, C. Yang and C. Wu 2006 Strain relaxation and quantum confinement in InGaN/GaN nanoposts Nanotechnology 17 1454 [6] L.-Y. Chen, Y.-Y. Huang, C.-H. Chang, Y.-H. Sun, Y.-W. Cheng, M.-Y. Ke, C.-P. Chen and J. Huang 2010 High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes Optics Express 18 7664-9 [7] C. Chiu, T. Lu, H. Huang, C. Lai, C. Kao, J. Chu, C. Yu, H. Kuo, S. Wang and C. Lin 2007 Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands Nanotechnology 18 445201 [8] P. Deb, H. Kim, Y. Qin, R. Lahiji, M. Oliver, R. Reifenberger and T. Sands 2006 GaN Nanorod Schottky and p−n Junction Diodes Nano letters 6 2893-8 [9] M. D. Drory, J. W. Ager, T. Suski, I. Grzegory and S. Porowski 1996 Hardness and fracture toughness of bulk single crystal gallium nitride Appl. Phys. Lett. 69 4044-6 [10] A. Efremov, N. Bochkareva, R. Gorbunov, D. Lavrinovich, Y. Rebane, D. Tarkhin and Y. Shreter 2006 Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs Semiconductors 40 605-10 [11] S. Feng, Y. Cheng, Y. Chung, C. Yang, Y. Lin, C. Hsu, K. Ma and J. Chyi 2002 Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures Journal of Applied Physics 92 4441 [12] A. Hori, D. Yasunaga, A. Satake and K. Fujiwara 2001 Temperature dependence of electroluminescence intensity of green and blue InGaN single-quantum-well light-emitting diodes Applied Physics Letters 79 3723 [13] A. Hori, D. Yasunaga, A. Satake and K. Fujiwara 2003 Temperature and injection current dependence of electroluminescence intensity in green and blue InGaN single-quantum-well light-emitting diodes Journal of Applied Physics 93 3152-7 [14] M.-Y. Hsieh, C.-Y. Wang, L.-Y. Chen, M.-Y. Ke and J. Huang 2008 InGaN–GaN Nanorod Light Emitting Arrays Fabricated by Silica Nanomasks IEEE JOURNAL OF QUANTUM ELECTRONICS 44 468 [15] Y.-Y. Huang, L.-Y. Chen, C.-H. Chang, Y.-H. Sun, Y.-W. Cheng, M.-Y. Ke, Y.-H. Lu, H.-C. Kuo and J. Huang 2011 Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays Nanotechnology 22 045202 [16] A. Kikuchi, M. Tada, K. Miwa and K. Kishino 2006 Growth and characterization of InGaN/GaN nanocolumn LED. ed K. G. Eyink and D. L. Huffaker (San Jose, CA, USA: SPIE) pp 612905-8 [17] D. J. Kim, D. Y. Ryu, N. A. Bojarczuk, J. Karasinski, S. Guha, S. H. Lee and J. H. Lee 2000 Thermal activation energies of Mg in GaN:Mg measured by the Hall effect and admittance spectroscopy Journal of Applied Physics 88 2564-9 [18] H.-M. Kim, Y.-H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang and K. S. Chung 2004 High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays Nano letters 4 1059-62 [19] M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek and Y. Park 2007 Origin of efficiency droop in GaN-based light-emitting diodes Appl. Phys. Lett. 91 183507 [20] A. Kontos, Y. Raptis, N. Pelekanos, A. Georgakilas, E. Bellet-Amalric and D. Jalabert 2005 Micro-Raman characterization of InxGa1-xN/GaN/Al2O3 heterostructures Physical Review B 72 155336 [21] Y.-J. Lee, S.-Y. Lin, C.-H. Chiu, T.-C. Lu, H.-C. Kuo, S.-C. Wang, S. Chhajed, J. K. Kim and E. F. Schubert 2009 High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays Applied Physics Letters 94 141111-3 [22] M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies and P. Gibart 1999 Temperature quenching of photoluminescence intensities in undoped and doped GaN Journal of Applied Physics 86 3721-8 [23] C. H. Liang, L. C. Chen, J. S. Hwang, K. H. Chen, Y. T. Hung and Y. F. Chen 2002 Selective-area growth of indium nitride nanowires on gold-patterned Si(100) substrates Applied Physics Letters 81 22-4 [24] K. Mayes, A. Yasan, R. McClintock, D. Shiell, S. Darvish, P. Kung and M. Razeghi 2004 High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well Applied Physics Letters 84 1046 [25] A. Motayed, A. V. Davydov, M. D. Vaudin, I. Levin, J. Melngailis and S. N. Mohammad 2006 Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition Journal of Applied Physics 100 024306-8 [26] T. Mukai, K. Takekawa and S. Nakamura 1998 InGaN-based blue light-emitting diodes grown on epitaxially laterally overgrown GaN substrates JAPANESE JOURNAL OF APPLIED PHYSICS PART 2 LETTERS 37 839-41 [27] I. Rozhansky and D. Zakheim 2006 Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping physica status solidi (c) 3 2160-4 [28] I. Rozhansky and D. Zakheim 2007 Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping physica status solidi (a) 204 227-30 [29] J. Ryou, P. Yoder, J. Liu, Z. Lochner, H. Kim, S. Choi, H. Kim and R. Dupuis 2009 Control of quantum-confined stark effect in InGaN-based quantum wells IEEE Journal of Selected Topics in Quantum Electronics 15 [30] C. Sah, R. Noyce and W. Shockley 1957 Carrier generation and recombination in pn junctions and pn junction characteristics Proceedings of the IRE 45 1228-43 [31] M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler and M. A. Banas 2007 Effect of dislocation density on efficiency droop in GaInN¢A GaN light-emitting diodes Appl. Phys. Lett. 91 231114 [32] J. F. Shackelford and W. Alexander 2010 CRC Materials Science and Engineering Handbook, Third Edition: CRC Press) p 474 [33] J. Shah, Y. Li, T. Gessmann and E. Schubert 2003 Experimental analysis and theoretical model for anomalously high ideality factors (n>> 2.0) in AlGaN/GaN pn junction diodes Journal of Applied Physics 94 2627 [34] Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm and M. R. Krames 2007 Auger recombination in InGaN measured by photoluminescence Applied Physics Letters 91 141101-3 [35] Y.-H. Sun, Y.-W. Cheng, S.-C. Wang, Y.-Y. Huang, C.-H. Chang, S.-C. Yang, L.-Y. Chen, M.-Y. Ke, C.-K. Li, Y.-R. Wu and J. Huang 2011 Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing Electron Device Letters, IEEE 32 182-4 [36] N. Thillosen, K. Sebald, H. Hardtdegen, R. Meijers, R. Calarco, S. Montanari, N. Kaluza, J. Gutowski and H. Lüth 2006 The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements Nano letters 6 704-8 [37] C. Wang, J. Chen, C. Chiu, H. Kuo, Y. Li, T. Lu and S. Wang 2010 Temperature-Dependent Electroluminescence Efficiency in Blue InGaN-GaN Light-Emitting Diodes With Different Well Widths IEEE PHOTONICS TECHNOLOGY LETTERS 22 [38] C.-Y. Wang, L.-Y. Chen, C.-P. Chen, Y.-W. Cheng, M.-Y. Ke, M.-Y. Hsieh, H.-M. Wu, L.-H. Peng and J. Huang 2008 GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength Optics Express 16 10549-56 [39] Y.-R. Wu, C. Chiu, C.-Y. Chang, P. Yu and H.-C. Kuo 2009 Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs Selected Topics in Quantum Electronics, IEEE Journal of 15 1226-33 [40] D. Zhu, J. Xu, A. N. Noemaun, J. K. Kim, E. F. Schubert, M. H. Crawford and D. D. Koleske 2009 The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes Applied Physics Letters 94 081113-3 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/43820 | - |
dc.description.abstract | 隨著化合物半導體的快速發展,氮化鎵由於其良好的材料特性,在固態照明相關領域受到了極大的關注。身為其應用之一的氮化鎵奈米柱發光二極體,更被認為具有近一步提升發光特性的潛力。然而由於諸多條件的限制,造成了氮化鎵奈米柱發光二極體元件特性不佳及發展上的困難,例如:逆偏壓下漏電流過大;發光效率低落;以及缺乏有效率的奈米結構製程技術等等,使其難以產業化。
在本篇論文中,我們發展一種嶄新且具實用價值之奈米小球微影術用以製作具有p-i-n結構之奈米柱陣列,並以電漿輔助化學氣相沉積法成長二氧化矽做為奈米柱側壁保護層,接著利用化學機械研磨方式去除包覆於奈米柱頂端之二氧化矽以利後續金屬接觸層之製作。藉由本文提出之方法,可有效解決以往奈米柱發光二極體漏電流過大及製程成本高之問題。在電性上,我們的奈米柱元件在-5V偏壓下僅有4.77nA之漏電流,其理想因子(ideality factor)約為7.35;於注入電流密度約32A/cm2時,有高達6807mW/cm2之發光強度。此結果顯示我們可利用奈米小球微影術及化學機械研磨法兩種低成本且簡易之方式製作出高效能之氮化鎵奈米柱發光二極體陣列。 接著我們針對藍光奈米柱發光二極體在不同溫度及電流下之電激發光頻譜特性做分析,並與平面傳統結構之元件做比較。我們發現於室溫下隨著電流增加,奈米柱元件之光子能量近乎維持常數,而平面結構元件卻有藍移之趨勢,顯示出此奈米柱結構能藉由應力釋放,有效抑制應力所造成之量子侷限史塔克效應(quantum confined Stark effect),同時提升發光二極體之內部量子效率。 另一方面,從低溫量測之結果可觀察到奈米柱結構中應力釋放效應以及側壁蝕刻生成缺陷(etching-induced defect)兩者之共存,因此我們設計兩種不同深度之奈米柱元件並進一步探討這兩效應間之相互關係。由於結合機制會隨著不同電流大小切換,兩元件總外部量子效率之變化得以清楚區分:低電流下由缺陷中之非輻射載子結合主導;高電流時則受到量子侷限史塔克效應之影響較深。對於較長之奈米柱而言,其應力釋放之效應較強但同時也具有較多之缺陷分佈,造成了總效率之緩慢增加以及相對輕微之效率下降效應;而較短的奈米柱則呈現了快速增加的總效率以及較為劇烈的下降效應。另外我們也藉由低溫環境來排除部分缺陷之非輻射結合因素。在低溫下,其量子效率之變化更可進一步說明兩效應之相互影響。由實驗結果可知,即使缺陷的多寡仍然為影響整體發光效率的關鍵因素,但無可置疑的,較長的奈米柱可確實地藉由應力釋放達到較高的內部量子效率,此意味著若能改善奈米柱蝕刻機制以減少缺陷分佈,即可實現高效能奈米柱發光二極體。 | zh_TW |
dc.description.abstract | With the tremendous growth of compound semiconductors, gallium nitride (GaN) has attracted considerable attentions in the field of solid state lighting due to the superior optical and electrical characteristics. As one of its applications, GaN-based nanorod light emitting diodes (LEDs) have been regarded to have the potential for improving optical properties. Nevertheless, there are some issues, such as the lack of efficient nano-fabrication, large leakage current under reversed bias and low optical output efficiency, that limit the performance and simplicity of manufacturing GaN nanorod LEDs.
In this thesis, we demonstrated a novel and practical approach to fabricate InGaN/GaN nanorod LED arrays with p-i-n structure using nanosphere lithography for nanorod formation, PECVD (plasma-enhanced chemical vapor deposition) grown SiO2 layer for sidewall passivation, and chemical mechanical polishing (CMP) process for parallel metal contact. With such a nano-device, we achieve a reverse leakage current of 4.77nA at -5V, an ideality factor of 7.35, and an optical output intensity 6807mW/cm2 at the injection current density of 32A/cm2. Based on the high performance, the temperature and current dependent electroluminesence (EL) of blue planar and nanorod LEDs was compared over a wide temperature range. With the nearly constant photon energy at room temperature, it reveals that the nanorod structures can effectively mitigate the strain induced quantum confined Stark effect (QCSE) and improve the internal quantum efficiency (IQE) of GaN LEDs. From the result of low temperature EL, the coexistence of strain relaxation and etching-induced defect states was observed in our nano-structured devices. Thus we further explore the correlation between these effects by two samples with different length of nanorods. Since the dominant recombination mechanism is dependent on the injection current, the variation of external quantum efficiencies (EQEs) between two devices can be clarified and explained by the defect-state-induced nonradiative recombination and the mitigation of strain-induced QCSE. Longer nanorods may cause a stronger strain relaxation but more defect state distribution, resulting in a mildly increasing EQE with less droop. As we excluded the effect of defect states at low temperature, the IQE characteristics were further verified. While the influence of defect-state-induced nonradiative recombination still dominates the overall performance, it is fact that the longer nanorod will contribute to the increase of IQE. With an optimized nanorod etching mechanism, high performance LEDs with long nanorods can thus be realized soon. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T02:29:36Z (GMT). No. of bitstreams: 1 ntu-100-R98941077-1.pdf: 2776364 bytes, checksum: de4a6cca6fd47033667a8cff65d98dc4 (MD5) Previous issue date: 2011 | en |
dc.description.tableofcontents | 口試委員審定書 i
謝誌 ii 摘要 iv Abstract vi Table of Contents viii List of Figures x Chapter One Introduction 1 1-1. Preface 1 1-2. Motivation 2 1-3. Nanorod fabrication 4 Chapter Two InGaN/GaN nanorod LEDs by nanosphere lithography and chemical mechanical polishing processes 8 2-1. InGaN/GaN MQW nanorod LED fabrication 8 2-2. Electrical characteristic of nanorod LEDs 12 2-3. Optical characteristic of nanorod LEDs 14 Chapter Three Temperature dependent electroluminescence of InGaN/GaN nanorod LEDs 22 3-1. Preface 22 3-2. Device characteristics 22 3-3. Strain relaxation analysis of nanorod structures 23 3-4. Temperature dependent electroluminescence 25 Chapter Four Effect of nano-structure on internal quantum efficiency in InGaN/GaN nanorod LEDs 33 4-1. Preface 33 4-2. Device characteristics 34 4-3. Strain relaxation analysis of nanorod structures 37 4-4. Effect of nano-structure on internal quantum efficiency 39 Chapter Five Conclusion 51 | |
dc.language.iso | en | |
dc.title | 奈米結構對氮化鎵奈米柱發光二極體內部量子效率之探討 | zh_TW |
dc.title | Effect of Nano-structure on Internal Quantum Efficiency in InGaN/GaN Nanorod Light Emitting Diodes | en |
dc.type | Thesis | |
dc.date.schoolyear | 99-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 賴聰賢(Tsong-Sheng Lay),郭浩中(Hao-Chung Kuo),夏興國(Hsin-Kuo Hsia) | |
dc.subject.keyword | 氮化鎵,奈米柱,發光二極體,內部量子效率,應力釋放,量子侷限史塔克效應,化學機械研磨法, | zh_TW |
dc.subject.keyword | GaN,nanorod,LED,internal quantum efficiency,strain relaxation,quantum confined Stark effect,chemical mechanical polishing, | en |
dc.relation.page | 52 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2011-08-17 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-100-1.pdf 目前未授權公開取用 | 2.71 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。