請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/43722完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 鍾添東 | |
| dc.contributor.author | Tzu-Yang Chen | en |
| dc.contributor.author | 陳子揚 | zh_TW |
| dc.date.accessioned | 2021-06-15T02:26:51Z | - |
| dc.date.available | 2010-08-20 | |
| dc.date.copyright | 2009-08-20 | |
| dc.date.issued | 2009 | |
| dc.date.submitted | 2009-08-17 | |
| dc.identifier.citation | [1]B. J. Lin, “The Ending of Optical Lithography and the Prospects of its Successors,” Microelectronic Engineering, vol.83, pp.604-613, 2006.
[2]B. J. Lin, “Optical Lithography—Present and Future Challenges,” Comptes Rendus Physique, vol.7, pp.858-874, 2006. [3]吳昱緯, “Design and Fabrication of MEMS-based Field Emission Electron Emitters for Multiple E-beam Lithography,” 國立台灣大學機械工程研究所碩士論文, 2008. [4]P. Rai-Choudhury, Handbook of Microlithography, Micromachining, and Microfabrication, vol.1, Microlithography, SPIE Publications, 1997. [5]J. Goldstein, D. Newbury, D. Joy, C. Lyman, P. Echlin, E. Lifshin, L. Sawyer, L.Michael, Scanning Electron Microscopy and X-ray Microanalysis 3rd ed. New York, Springer Science+Business Media, 2003. [6]Tae-Sik Oh, Seong Joon Ahn, Ho Seob Kim, Chul Geun Park and Seungjoon Ahn, “Study on the Recognition of the Marks for the Low-energy Microcolumn Lithography,” Journal of Ceramic Processing Research, vol.10, no.1, pp.58-60, 2009. [7]T. Yoshimoto, S.H. Hwang, K.H. Kim, D.J Seong, D.W. Kim, Y.C. Kim, S.J. Ahn and H.S. Kim, “Nano Patterning Fabrication by Low Energy Microcolumn Lithography,” Proc. of Spie vol.6476-647612-1, 2007. [8]T. Nakanishi, M. Yamamoto, N. Yamamoto, S. Okumi, F. Furuta, M. Kuwahara, K. Naniwa, K. Yasui, H. Kobayakawa, Y. Takashima, H. Matsumoto, M. Kuriki and M. Yoshioka, “Ultra-High Vacuum Problem for 200 Kev Polarized Electron Gun with NEA-GaAs Photocathode,” Dept. of Physics, Nagoya University, Nagoya 464-8602, Japan, 2004. [9]P. Gnauck, “A New High Resolution Field Emission SEM with Variable Pressure capabilities,” LEO Elektronenmikroskopie Gmbh, D-73446 Oberkochen, Germany. [10]“JSM-700F Field Emission Scanning Electron Microscope,” Instructions Manual of JEOL Ltd., 2004. [11]X. T. Yang, J. H. Zhang, X. J. Zhang, H. M. Wu, J. Meng and S. J. Hou, “The Ultra-High Vacuum System of HIRFL-CSR,” Vacuum, vol.61, pp.55-60, 2001. [12]X. T. Yang, J. H. Zhang, X. J. Zhang, H. M. Wu, J. Meng and S. J. Hou, “The First Prototype of the HIRFL-CSR UHV System,” Vacuum, vol.68, pp.11-18, 2003. [13]D. K. Jiang, L. X. Yin, Z. S. Wang, H. W. Du, B. H. Shen, L. P. Chen, X. L. Jiang and C. Yu, ”Ultrahigh Vacuum System of the SSRF,” Proceedings of the Second Asian Particle Accelerator Conference, Beijing, china, 2001. [14]In-Keun Yu, Sang-Ryul In, Jong-Yeun Lim and Seungyon Cho, “Design and Test of the KSTAR Vacuum Pumping System,” Fusion Engineering and Design 83, pp.117-122, 2008. [15]陳建人, “真空技術與運用,” 國家實驗研究院, 儀器科技研究中心出版, 2006. [16]P. A. Redhead, “The Physical Basis of Ultra-High Vacua,” Chapman &Hall, London, 1968. [17]Niels Marquardt, “Introduction to the Principles of Vacuum Physics,” Institute for Accelerator Physics and Synchrotron Radiation, University of Dortmund, 44221 Dortmund, Germany. [18]P. A. Redhead, “The Ultimate Vacuum,” Vacuum, vol.53, pp.137-149, 1999. [19]王勇, “超高真空物理與技術基礎,” 國家同步輻射實驗室, 中國科學技術大學. [20]熊高鈺(G. Y. Hsiung), 超高真空技術研會講義, 交通大學, 2006. [21]K. M. Birnbaum and The Quantum Optics Group, “Ultra-High Vacuum Chambers,“ Norman Bridge Laboratory of Physics 12-33, October 3, 2005. [22]John F. O’Hanlon, “A User’s Guide to Vacuum Technology,” 3rd Edition, John Wiley & Sons, Inc., 1993. [23]Http://www.cae2k.com/howto.html [24]Http://www.fnal.gov/pub/news08/update_archive/update_07-23_07-25.html [25Http://upload.wikimedia.org/wikipedia/commons/4/4c/Cut_through_turbomolecular_pump.jpg [26]Vacuum Manual, Edited by L. Holland, W. Steckelmacher and J. Yarwood, E. and F. N. Spon, London, 1974. [27]Wei Li Chuang, “Fabrication and Study of Electron Beam Array Characteristic,” 國立台灣大學機械工程研究所博士論文, 2009. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/43722 | - |
| dc.description.abstract | 本文研究電子束直寫微影系統之超高真空系統的抽氣測試與應用，此超高真空系統包含一個真空腔體、一個乾式幫浦、一個渦輪分子幫浦、一個離子幫浦、一組低真空計、一組高真空計及一組包覆於腔體上之加熱系統。此真空系統之初型製作已經完成，且已經陸續完成其性能測試。為了在短時間內達成各種特定的壓力，本論文針對超高真空系統之各種不同操作程序組合做了測試與分析。影響抽氣性能之主要因素包含離子幫浦、烘烤溫度及烘烤程序等。在所有系統抽氣測試中，都必須使用油式幫浦與渦輪幫浦。從不同抽氣之操作程序組合測試結果中可得到一些結論，在加入離子幫浦及烘烤五天的情況下，此超高真空系統之壓力可以在七天內達到1.3E-9 Torr。研究也指出，在加入離子幫浦及一次烘烤情況下，此系統壓力可以在一天之內達到9.7E-9 Torr。從研究結果中可以確定，增加烘烤程序可以有效的降低真空系統的抽氣時間及壓力。最後，施加1200伏特電壓的4x4矽針尖陣列之場發射實驗，可以在此超高真空系統腔體中持續做兩個小時。在場發射實驗設備安裝於真空腔內之情況下，真空系統可以在一小時內到達1.0E-7 Torr等級之壓力。 | zh_TW |
| dc.description.abstract | This paper studies the pump down tests and applications of an ultra high vacuum (UHV) system for electron-beam direct-write lithography. The UHV system includes a vacuum chamber, an oil vane pump, a turbo molecular pump, an ion pump, a low vacuum gauge, a high vacuum gauge, and a baking heater fitted around the chamber. The prototype of the vacuum system is manufactured and performances of the prototype are tested. In order to reach different specified vacuum pressure within the shortest time, effects of the different operating process combinations are tested and analyzed. Main factors affecting the pump down characteristics include effect of ion pump, baking temperature, and baking periods. The oil vane pump and the turbo pump are always turned on during the entire pump down tests. From the test results of different operating process combinations, it shows that the vacuum system can reach the lowest vacuum pressure of 1.3E-9 Torr within 7 days, with turned on ion pump and baking of chamber for 5 days. It also shows that the chamber can reach the vacuum pressure to 9.7E-9 Torr within 1 day with turned on ion pump and one baking period. It is also concluded that both the pump down time and vacuum pressure can be greatly reduced with the adding of baking process. Finally, a field emission test of a 4x4 silicon tip array is carried out successfully inside the UHV chamber under the constant applied voltage of 1200V for test duration of 2 hours. With the field emission test species inside the chamber, the vacuum pressure reaches the order of 1.0E-7 Torr within 1 hour. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T02:26:51Z (GMT). No. of bitstreams: 1 ntu-98-R94522617-1.pdf: 4052378 bytes, checksum: b48b4e8f70fde2805c588c4088ccbcdb (MD5) Previous issue date: 2009 | en |
| dc.description.tableofcontents | 口試委員會審定書 II
誌謝 IV 中文摘要 VI Abstract VIII 目錄 X 圖目錄 XII 表目錄 XIV 符號表 XVI 第一章 緒論 1 1.1 研究背景與動機 1 1.2 電子束微影系統 2 1.3 文獻回顧 3 1.4 本文架構 11 第二章 真空簡介 13 2.1 真空概論 13 2.1.1 真空的定義 13 2.1.2 真空的基本概念 13 2.1.3 真空技術發展史 14 2.1.4 真空度的單位及真空度分類 14 2.2 真空材料 16 2.2.1 真空材料簡介 16 2.2.2 真空烘烤 20 2.3 真空幫浦 22 2.3.1 真空幫浦的分類 23 2.3.2 離子幫浦(Ion pump) 24 2.3.3 渦輪幫浦(Turbo molecular pump) 25 2.3.4 油迴轉式幫浦 26 2.4 其他真空元件 26 2.4.1 真空計 27 2.4.2 真空閥門 27 2.4.3 真空導引(Feedthrough) 28 2.4.4 視窗 29 2.5 真空封合 30 2.5.1 螺絲鎖合 30 第三章 超高真空系統抽氣測試結果 33 3.1 超高真空系統設備介紹 33 3.2 真空烘烤設備 34 3.3 真空系統終極壓力測試 36 3.4 渦輪幫浦抽氣測試 38 3.5 離子幫浦抽氣測試 40 3.6 二次加熱對真空度之影響 43 3.7 加熱系統改良後之抽氣測試 45 3.8 各真空幫浦抽氣性能比較及真空度操作之較佳結果 48 3.9 結果討論 49 第四章 超高真空系統之應用 51 4.1 場發射實驗之真空系統抽氣量測結果 51 4.2 結果討論 57 第五章 論文結論與建議 59 5.1 建議 59 參考文獻 61 附錄A 真空系統操作說明 63 A.1 真空系統設備介紹 63 A.2 開啟真空系統之操作流程 64 A.3 關閉真空系統之操作流程 71 A.4 真空系統操作注意事項 74 作者簡歷 75 | |
| dc.language.iso | zh-TW | |
| dc.subject | 場發射 | zh_TW |
| dc.subject | 超高真空系統 | zh_TW |
| dc.subject | 電子束微影系統 | zh_TW |
| dc.subject | 真空烘烤 | zh_TW |
| dc.subject | 抽氣測試 | zh_TW |
| dc.subject | pump down test | en |
| dc.subject | field emission | en |
| dc.subject | ultra high vacuum system | en |
| dc.subject | e-beam lithography | en |
| dc.subject | vacuum baking | en |
| dc.title | 超高真空系統之抽氣測試與應用 | zh_TW |
| dc.title | Pump Down Tests and Applications of an Ultra High Vacuum System | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 97-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 劉正良,顏家鈺 | |
| dc.subject.keyword | 超高真空系統,電子束微影系統,真空烘烤,抽氣測試,場發射, | zh_TW |
| dc.subject.keyword | ultra high vacuum system,e-beam lithography,vacuum baking,pump down test,field emission, | en |
| dc.relation.page | 75 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2009-08-17 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 機械工程學研究所 | zh_TW |
| 顯示於系所單位： | 機械工程學系 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-98-1.pdf 未授權公開取用 | 3.96 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。