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標題: | 以Floquet理論分析奈米尺度系統的電子傳輸 A Generalized Floquet Theory for the Treatment of Electron Transport of Nanoscale Systems |
作者: | Shih-Han Hung 洪士涵 |
指導教授: | 朱時宜 |
關鍵字: | 奈米尺度系統,電子傳輸,量子點,記憶效應,同調穿隧截止, nanoscale system,electron transport,quantum dot,memory effect,coherent destruction of tunneling, |
出版年 : | 2009 |
學位: | 碩士 |
摘要: | 奈米尺度系統的電子傳輸常假設於寬帶極限之下,在此極限下,記憶效應會隨之忽略。在此論文中,我們將Floquet理論應用於奈米尺度系統之電子傳輸,探討在時變外加場之下記憶效應的多光子同調穿隧截止效應。以電極─雙量子點─電極系統為例,電極與量子點之交互作用假設為勞侖茲分佈函數時,探討記憶效應之影響以及多光子同調穿隧截止效應之物理機制。 Electron transport through nanoscale systems are often studied in the wide-band limit without taking the memory effect into consideration. In this thesis, we present a novel Floquet approach in electron transport through nanoscale systems beyond the wide-band limit to explore the multi-photon (MP) coherent destruction of tunneling (CDT) with memory effect in the presence of time-dependent driving field. As a case study, the time-averaged current is calculated in an electrode-double quantum dots-electrode system driven by a periodic field using single Lorentzian spectral density function and a detailed analysis is presented to illustrate the origin of MP-CDT as well as the significance of memory effect. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/43504 |
全文授權: | 有償授權 |
顯示於系所單位: | 物理學系 |
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