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標題: | 低溫製程染料敏化太陽能電池之研究 Studies of Low-Temperature-Processed Dye Sensitized Solar Cells |
作者: | Chang Chin-Wei 張晉瑋 |
指導教授: | 吳忠幟 |
關鍵字: | 染料敏化太陽能電池,二氧化鈦,雙層結構,三層結構, dye-sensitized solar cell,Tio2,double-layer structure,triple-layer structure, |
出版年 : | 2009 |
學位: | 碩士 |
摘要: | 我們以商用漿料(Ti-Nanoxide T20-LALT, Solaronix)、(Ti-Nanoxide D20-LALT, Solaronix)製作多孔隙的二氧化鈦電極,以研製低溫製程染料敏化太陽能電池(dye-sensitized solar cells, DSSC)。藉由改變二氧化鈦電極厚度、設計光陷結構、製作堆疊式染料結構及電解液的選擇,以掃描式電子顯微鏡(SEM)、觸針式表面型態分析(Surface Profiling)、電流電壓特性(current-voltage characteristics)、頻譜響應(Spectrum response)等分析方式,探討上述不同的變因對於DSSC之影響,並提升DSSC的光電轉換效率。
在100 mW/cm2 (AM1.5)的模擬太陽光源下,以T20-LALT 為基礎的單層結構,效率可達5.8%。以T20-LALT及D20-LALT 為基礎的雙層結構,效率可達6.2%。以 T20-LALT及D20-LALT 為基礎的三層結構,最高效率可達6.8%,其中開路電壓(open circuit voltage)為0.67V,短路電流密度(short circuit current density)可達15.2mA/cm2,填充因子(fill factor)為0.66。 We used water-based solutions of commercially available gels (Ti-Nanoxide T20-LALT and Ti-Nanoxide D20-LALT) to prepare a porous photoelectrodes for the fabrication of low-temperature-processed dye-sensitized solar cells (DSSC). By varying the thickness and light-trapping structure of the titanium oxide electrodes, the tandem-like double-dye-layer structure and the composition of the electrolytes, we studied their influences on DSSC performances, by analyzing SEM, surface profiling, current-voltage characteristics and spectrum response. In the single-layer photoelectrode structure, the light-to-electric-energy conversion efficiency of solar cells based on T20-LALT is up to 5.8% at 1 sun illumination (AM1.5, 100 mW/cm2). In the double-layer photoeletrode structure, the light-to-electric-energy conversion efficiency of solar cells based on T20-LALT and D20-LALT is up to 6.2% at 1 sun illumination (AM1.5, 100 mW/cm2). In the triple-layer photoeletrode structure, the light-to-electric-energy conversion efficiency of solar cells based on T20-LALT and D20-LALT is up to 6.8% (Voc= 0.67 V, Jsc =15.2 mA/cm2, FF=0.66) at 1 sun illumination (AM1.5, 100 mW/cm2) . |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/42467 |
全文授權: | 有償授權 |
顯示於系所單位: | 光電工程學研究所 |
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