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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林恭如(Gong-Ru Lin) | |
dc.contributor.author | Cheng-Wei Lian | en |
dc.contributor.author | 連承偉 | zh_TW |
dc.date.accessioned | 2021-06-15T00:59:54Z | - |
dc.date.available | 2010-08-08 | |
dc.date.copyright | 2008-08-08 | |
dc.date.issued | 2008 | |
dc.date.submitted | 2008-08-01 | |
dc.identifier.citation | Chapter 1
[1.1] L. Dal Negro, M. Cazzanelli, N. Daldosso, Z. Gaburroa, L. Pavesi, F. Priolo, D. Pacifici, G. Franzò, F. Iacona, 'Stimulated emission in plasma-enhanced chemical vapour deposited silicon nanocrystals,' Physica E, vol. 16, pp. 297-308, (2003). [1.2] L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò and F. Priolo, 'Optical gain in Si nanocrystal,' Nature, vol. 408, pp. 440-444, (2000). [1.3] P. Pellegrino, B. Garrido, C. Garcia, J. Arbiol, J. R. Morante, M. Melchiorri, N. Daldosso, L. Pavesi, E. Scheid, and G. Sarrabayrouse, 'Low-loss rib waveguides containing Si nanocrystal embedded in SiO2, ' J. Appl. Phys., vol. 97, pp. 074312, (2005). [1.4] K. Luterová, K. Dohnalová, V. Švrček and I. Pelant, 'Optical gain in porous silicon grains embedded in sol-gel derived SiO2 matrix under femtosecond excitation' Appl. Phys. Lett., vol. 84, pp. 3280-3282, (2004). [1.5] L. T. Canham, 'Si quantum wire array fabrication by electrochemical and chemical dissolution of wafers,' Appl. Phys. Lett., vol. 57, pp. 1046-1048, (1990). [1.6] L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò , F. Priolo, and F. Iacona, 'Dynamics of stimulated emission in silicon nanocrystals' Appl. Phys. Lett., vol. 82, pp. 4636-4638, (2003). [1.7] M. Cazzanelli, D. Navarro-Urriós, F. Riboli, N. Daldosso, L. Pavesi, J. Heitmann, L. X. Yi, R. Scholz, M. Zacharias, and U. Gösele, 'Optical gain in monodispersed silicon nanocrystals,' J. Appl. Phys., vol. 96, pp. 3164-3171, (2004). [1.8] G. Ledoux, J. Gong, F. Huisken, O. Guillois and C. Reynaud, 'Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement,' Appl. Phys. Lett., vol. 80, pp. 4834-4836, (2002). [1.9] P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda,E. Grilli and M. Guzzi, 'Room-temperature visible luminescence from Si nanocrystals in Si implanted SiO2 layers,' Appl. Phys. Lett., vol. 66, pp. 851-853, (1995). [1.10] T. Shimizu-Iwayama, K. Fujita, S. Nakao, K. Saitoh, T. Fujita and N. Itoh, 'Visible photoluminescence in Si+-implanted silica glass,' J. Appl. Phys., vol. 75, pp. 7779-7783, (1994). [1.11] Y. Osaka, K. Tsunetomo, F. Toyomura, H. Myoren, and K. Kohno, 'Visible photoluminescence from Si microcrystals embedded in SiO2 glass films,' Jpn. J. Appl. Phys., vol. 31, pp. L365-L366, (1992). [1.12] S. Takeoka, M. Fujii and S. Hayashi, 'Size-dependent photoluminescence from surface-oxidized Si nanocrystals in a weak confinement regime,' Phys. Rev. B, vol. 62, pp. 16820-16825, (2000). [1.13] C. J. Lin, C. K. Lin, C. W. Chang, Y. L. Chueh, H. C. Kuo , W. G. Diau, L.J. Chou and G. R. Lin, 'Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures,' Jpn. J. Appl. Phys., vol. 45, pp. 1040-1043, (2006). [1.14] J. H. Shin, J. Lee, H.-S. Han, J.-H. Jhe, J. S. Chang, S.-Y. Seo, H. Lee, and N. Park, 'Si nanocluster sensitization of Er-doped silica for optical amplet using top-pumping visible LEDs,' IEEE J. Sel. Top. Quantum Electron, vol. 12, 783-796, (2006) [1.15] T. J. Clement, R. G. DeCorby, N. Ponnampalam, T. W. Allen, A. Hryciw and A. Meldrum, 'Nanocluster sensitized erbium-doped Si monoxide waveguides,' Opt. Exp., vol. 14, pp. 12151-12162, (2006). [1.16] B. E. Little, Member, IEEE, J. S. Foresi, G. Steinmeyer, E. R. Thoen, S. T. Chu, H. A. Haus, Life Fellow, IEEE, E. P. Ippen, Fellow, IEEE, L. C. Kimerling and W. Greene, 'Ultra-compact Si-SiO2 microring resonator optical channel dropping filters,' IEEE Phot. Tech. Lett., vol. 10, pp. 549-551, (1998). [1.17] D. S. Gardner, M. L. Brongersma, 'Microring and microdisk optical resonators using Si nanocrystal and erbium prepared using Si technology,' Optical Materials, vol. 27, pp. 804-811, (2005). [1.18] K. Jia, W. Wang, Y. Tang, Y. Yang, J. Yang, Member, IEEE, X. Jiang, Member, IEEE, Y. Wu, M. Wang, and Y. Wang, Senior Member, IEEE, 'Si-on-insulator-based optical demultiplexer employing turning-mirror-integrated arrayed-waveguide grating,' IEEE Phot. Tech. Lett., vol. 17, pp. 378-380, (2005). Chapter 2 [2.1] K. Okamoto, “Fundamentals of optical waveguides”, Academic Press, San Diego, 2000. [2.2] T. Tamir, “Guided-wave optoelectronics”, Springer-Verlag, Berlin, 1988. [2.3] Rsoft Design Group, “BeamPROP 5.1 user manual”, pp.12-14. [2.4] Z. J. Csender and P. Silvester, 'Numerical solution of dielectric loaded wavegnides,' IEEE Trans. Microwave Theory Tech., vol. MTT-18, pp. 1124, (1970). [2.5] C. Yeh, S. B. Dong, and W. Olirrer, 'Arbitrarily shaped inhomogeneous optical fiber or integrated optical waveguides,' J. Appl. Phys., vol. 46, pp. 2125, (1975). [2.6] C. Yeh, K. Ha, S. B. Dong, and W. P. Brown, 'Single mode optical waveguides,' Appl. Opt., vol. 18, pp. 1490, (1979). [2.7] P. Vandenbulcke and P. E. Lagasse, 'Eigemnode analysis of anisotropic optical fibers or integrated optical waveguides,' Electron. Lett., vol. 12, pp. 120, (1976). [2.8] N. Mabaya, P. E. Lagasse, and P. Vandenbulcke, 'Finite element analysis of optical waveguides,' IEEE Trans. Microwave Theory Tech., vol. MTT-29, pp. 600-605, (1981). Chapter 3 [3.1] L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò and F. Priolo, 'Optical gain in Si nanocrystal,' Nature, vol. 408, pp. 440-444, (2000). [3.2] P. Pellegrino, B. Garrido, C. Garcia, J. Arbiol, J. R. Morante, M. Melchiorri, N. Daldosso, L. Pavesi, E. Scheid, and G. Sarrabayrouse, 'Low-loss rib waveguides containing Si nanocrystal embedded in SiO2, ' J. Appl. Phys., vol. 97, pp. 074312, (2005). [3.3] K. Luterová, K. Dohnalová, V. Švrček and I. Pelant, 'Optical gain in porous silicon grains embedded in sol-gel derived SiO2 matrix under femtosecond excitation' Appl. Phys. Lett., vol. 84, pp. 3280-3282, (2004). [3.4] J. H. Shin, J. Lee, H.-S. Han, J.-H. Jhe, J. S. Chang, S.-Y. Seo, H. Lee, and N. Park, 'Si nanocluster sensitization of Er-doped silica for optical amplet using top-pumping visible LEDs,' IEEE J. Sel. Top. Quantum Electron, vol. 12, 783-796, (2006). [3.5] T. J. Clement, R. G. DeCorby, N. Ponnampalam, T. W. Allen, A. Hryciw and A. Meldrum, 'Nanocluster sensitized erbium-doped Si monoxide waveguides,' Opt. Exp., vol. 14, pp. 12151-12162, (2006). [3.6] B. E. Little, Member, IEEE, J. S. Foresi, G. Steinmeyer, E. R. Thoen, S. T. Chu, H. A. Haus, Life Fellow, IEEE, E. P. Ippen, Fellow, IEEE, L. C. Kimerling and W. Greene, 'Ultra-compact Si-SiO2 microring resonator optical channel dropping filters,' IEEE Phot. Tech. Lett., vol. 10, pp. 549-551, (1998). [3.7] D. S. Gardner, M. L. Brongersma, 'Microring and microdisk optical resonators using Si nanocrystal and erbium prepared using Si technology,' Optical Materials, vol. 27, pp. 804-811, (2005). [3.8] K. Jia, W. Wang, Y. Tang, Y. Yang, J. Yang, Member, IEEE, X. Jiang, Member, IEEE, Y. Wu, M. Wang, and Y. Wang, Senior Member, IEEE, 'Si-on-insulator-based optical demultiplexer employing turning-mirror-integrated arrayed-waveguide grating,' IEEE Phot. Tech. Lett., vol. 17, pp. 378-380, (2005). [3.9] K. Luterová, M. Cazzanelli, J.-P. Likforman, D. Navarro, J. Valenta, T. Ostatnický, K. Dohnalová, S. Cheylan, P. Gilliot, B. Hönerlage, L. Pavesi, I. Pelant, 'Optical gain in nanocrystalline Si: comparison of planar waveguide geometry with a non-waveguiding ensemble of nanocrystal,' Optical Materials, vol. 27, pp. 750-755, (2005) Chapter 4 [4.1] L. Dal Negro, M. Cazzanelli, N. Daldosso, Z. Gaburroa, L. Pavesi, F. Priolo, D. Pacifici, G. Franzò, F. Iacona, 'Stimulated emission in plasma-enhanced chemical vapour deposited silicon nanocrystals,' Physica E, vol. 16, pp. 297-308, (2003). [4.2] L. T. Canham, 'Si quantum wire array fabrication by electrochemical and chemical dissolution of wafers,' Appl. Phys. Lett., vol. 57, pp. 1046-1048, (1990). [4.3] L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò , F. Priolo, and F. Iacona, 'Dynamics of stimulated emission in silicon nanocrystals' Appl. Phys. Lett., vol. 82, pp. 4636-4638, (2003). [4.4] L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò and F. Priolo, 'Optical gain in Si nanocrystal,' Nature, vol. 408, pp. 440-444, (2000). [4.5] M. Cazzanelli, D. Navarro-Urriós, F. Riboli, N. Daldosso, L. Pavesi, J. Heitmann, L. X. Yi, R. Scholz, M. Zacharias, and U. Gösele, 'Optical gain in monodispersed silicon nanocrystals,' J. Appl. Phys., vol. 96, pp. 3164-3171, (2004). [4.6] G. Ledoux, J. Gong, F. Huisken, O. Guillois and C. Reynaud, 'Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement,' Appl. Phys. Lett., vol. 80, pp. 4834-4836, (2002). [4.7] P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda,E. Grilli and M. Guzzi, 'Room-temperature visible luminescence from Si nanocrystals in Si implanted SiO2 layers,' Appl. Phys. Lett., vol. 66, pp. 851-853, (1995). [4.8] T. Shimizu-Iwayama, K. Fujita, S. Nakao, K. Saitoh, T. Fujita and N. Itoh, 'Visible photoluminescence in Si+-implanted silica glass,' J. Appl. Phys., vol. 75, pp. 7779-7783, (1994). [4.9] Y. Osaka, K. Tsunetomo, F. Toyomura, H. Myoren, and K. Kohno, 'Visible photoluminescence from Si microcrystals embedded in SiO2 glass films,' Jpn. J. Appl. Phys., vol. 31, pp. L365-L366, (1992). [4.10] S. Takeoka, M. Fujii and S. Hayashi, 'Size-dependent photoluminescence from surface-oxidized Si nanocrystals in a weak confinement regime,' Phys. Rev. B, vol. 62, pp. 16820-16825, (2000). [4.11] C. J. Lin, C. K. Lin, C. W. Chang, Y. L. Chueh, H. C. Kuo , W. G. Diau, L.J. Chou and G. R. Lin, 'Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures,' Jpn. J. Appl. Phys., vol. 45, pp. 1040-1043, (2006). [4.12] K. L. Shaklee, R. F. Leheny, 'Direct Determination of Optical Gain in Semiconductor Crystals,' Appl. Phys. Lett., vol. 18, pp. 475-477, (1971). [4.13] J. Valenta, I. Pelant, J. Linnros, 'Waveguiding effects in the measurement of optical gain in a layer of Si nanocrystals,' Appl. Phys. Lett., vol. 81, pp. 1396-1398, (2002). [4.14] K. Luterová, M. Cazzanelli, J.-P. Likforman, D. Navarro, J. Valenta, T. Ostatnický, K. Dohnalová, S. Cheylan, P. Gilliot, B. Hönerlage, L. Pavesi, I. Pelant, 'Optical gain in nanocrystalline Si: comparison of planar waveguide geometry with a non-waveguiding ensemble of nanocrystal,' Optical Materials, vol. 27, pp. 750-755, (2005). | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/42321 | - |
dc.description.abstract | 在本論文中,我們對 SiO2/SiOX/SiO2/Quartz-substrate 帶狀波導及 SiO2/SiOX/SiO2/Si-substrate帶狀波導做模擬。 在模擬波導的結構時,我們使用了等效折射率法 (EIM) 、光束傳播法 (BPM) 、有限元素法 (FEM) 。 接著,我們製作出這兩種不同結構的波導並利用可變長度法 (VSL) 對一維放大模型公式做曲線擬合,量測其光增益及損耗係數。 我們觀察到內埋奈米矽富矽二氧化矽帶狀波導的自發輻射放光 (ASE) 範圍在 750 - 850 奈米,而其頻譜線寬為 140 奈米。 此外我們得到 SiO2/SiOX/SiO2/Quartz-substrate 帶狀波導的光增益與損耗係數分別為 70 和 5 cm-1 。 而 SiO2/SiOX/SiO2/Si-substrate 帶狀波導的光增益與損耗係數分別為 106.7 和 21 cm-1 。 成長於矽基板的波導元件之光損耗係數較成長於石英基板的波導元件為大,是由於光模態洩漏到矽基板中。 而矽基板波導元件的光增益係數也較石英基板波導元件大,是由於矽基板波導元件具有較佳的光模態侷限。 在小訊號放大實驗中,對於795奈米的雷射小訊號在波長325奈米的氦鎘雷射與激發功率 43.7 毫瓦的條件下,我們在 1 公分的SiO2/SiOX/SiO2/Si-substrate 帶狀波導中得到高達 11.73 dB 的小訊號增益。 | zh_TW |
dc.description.abstract | In this thesis, we simulate the SiO2/SiOX/SiO2/Quartz-substrate strip-loaded waveguide and the SiO2/SiOX/SiO2/Si-substrate strip-loaded waveguide. The Effective-Index Method (EIM), the Beam Propagation Method (BPM), and the Finite Element Method (FEM) are used to simulate the waveguide structure. Subsequently, we fabricate these two type waveguides and measure the optical gain and loss coefficients by fitting the one dimensional amplifier equation of the Variable Stripe Length (VSL) method. We observe that the Si-rich SiOX strip-loaded waveguide with silicon (Si) nanocrystal contributed amplified spontaneous emission (ASE) at 750-850 nm with the associated spectral linewidth of 140 nm is characterized. The ASE spectrum is red-shifted 6 nm to PL spectrum because of mode guiding. The peak wavelength of ASE spectrum is blue shift with longer pumping length. Because of the longer pumping length, the mode guiding is stronger and the peak wavelength becomes stable. The optical gain and loss coefficients of the SiO2/SiOX/SiO2/Quartz-substrate strip-loaded waveguide are 70 and 5 cm-1, respectively. The optical gain and loss coefficients of the SiO2/SiOX/SiO2/Si-substrate strip-loaded waveguide are 106.7 and 21 cm-1, respectively. The optical loss coefficient of the Si-substrate device is larger than the Quartz-substrate device which is due to the optical mode leakage to Si substrate. The optical net modal gain coefficient of Si-substrate device is larger than Quartz-substrate device which is due to the better mode confinement. The small-signal amplification of up to 11.73 dB for 795 nm small laser signal under He-Cd laser pumping of 43.7 mW at the wavelength of 325 nm is obtained from the SiO2/SiOX/SiO2/Si-substrate strip-loaded waveguide amplifier with a length of 1 cm. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T00:59:54Z (GMT). No. of bitstreams: 1 ntu-97-R95941032-1.pdf: 1243911 bytes, checksum: 4c18670dbf2a940dd77efdfb318b6b58 (MD5) Previous issue date: 2008 | en |
dc.description.tableofcontents | 口試委員會審定書 #
誌謝 i 中文摘要 ii ABSTRACT iii CONTENTS iv LIST OF FIGURES vii Chapter 1 Introduction 1 1.1 Characteristic of Si nanocrystals in waveguide structure 1 1.2 Motivation 3 1.3 Organization of the Thesis 3 Chapter 2 Waveguide Design 5 2.1 Theory of Optical Waveguides 5 2.2 The Effective-Index Method (EIM) 6 2.3 The Beam Propagation Method (BPM) 9 2.4 The Finite Element Method (FEM) 12 2.5 The BPM Simulation of the Strip-Loaded Waveguide 13 2.5.1 The Thickness of The SiOX:nc-Si Layer 13 2.5.2 The Height of the SiO2 Strip 14 2.5.3 The Thickness of the SiO2 Buffer Layer 15 2.6 The BPM Simulation of the Raised Strip Waveguide 16 2.6.1 The Thickness of the SiO2 Buffer Layer 16 2.6.2 The Different Refractive Index of the SiOX:nc-Si Strip 17 2.7 Conclusion 18 Chapter 3 A Buried Silicon Nanocrystal Based High Gain Coefficient SiO2/SiOX/SiO2 Strip-Loaded Waveguide Amplifier on the Quartz Substrate 32 3.1 Introduction 32 3.2 Experiments 34 3.2.1 Waveguide Modeling - Effective Index Method 34 3.2.2 Waveguide Simulation - Beam Propagation Method 35 3.2.3 Waveguide Fabrication 36 3.3 Results and Discussions 36 3.3.1 Strip-Loaded Waveguide Geometry 36 3.3.2 Gain Analysis - Variable Stripe Length Method (VSL) 37 3.3.3 ASE versus PL spectrum and Gain/Loss Analysis 38 3.3.4 Small Signal Amplification 39 3.4 Conclusion 41 Chapter 4 A Buried Silicon Nanocrystal Based High Gain Coefficient SiO2/SiOX/SiO2 Strip-Loaded Waveguide Amplifier on the Si Substrate 49 4.1 Introduction 49 4.2 Experiments 50 4.2.1 Waveguide Simulation 50 4.2.2 Waveguide Fabrication 52 4.3 Results and Discussions 52 4.3.1 Gain Analysis - Variable Stripe Length Method 52 4.3.2 ASE versus PL spectrum and Optical Gain/Loss Coefficient Analysis 53 4.3.3 Small Signal Amplification 55 4.4 Conclusion 57 Chapter 5 Summary 69 REFERENCE 72 作者簡介 79 Publication List 80 | |
dc.language.iso | en | |
dc.title | 含矽基奈米矽之富矽氧化矽光波導增益研究 | zh_TW |
dc.title | A Buried Silicon Nanocrystal Based High Gain Coefficient SiO2/SiOX/SiO2 Strip-Loaded Waveguide Amplifier on the Si Substrate | en |
dc.type | Thesis | |
dc.date.schoolyear | 96-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 張宏鈞(Hung-Chun Chang),黃鼎偉(Ding-wei Huang),李明昌(Ming-Chang Lee) | |
dc.subject.keyword | 奈米矽,波導,光放大器, | zh_TW |
dc.subject.keyword | silicon nanocrystals,waveguide,optical amplifier, | en |
dc.relation.page | 80 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2008-08-01 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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