請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/42298
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林恭如(Gong-Ru Lin) | |
dc.contributor.author | Po-Han Lai | en |
dc.contributor.author | 賴柏翰 | zh_TW |
dc.date.accessioned | 2021-06-15T00:58:28Z | - |
dc.date.available | 2010-08-08 | |
dc.date.copyright | 2008-08-08 | |
dc.date.issued | 2008 | |
dc.date.submitted | 2008-08-03 | |
dc.identifier.citation | Chapter 1
[1.1] L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, and F. Priolo, “Optical gain in Silicon nanocrystals,” Nature, vol. 408, pp.440-444 (2000). [1.2] L. Dal Negro, M. Cazzanelli, N. Daldosso, Z. Gaburroa, L. Pavesi, F. Priolo, D. Pacifici, G. Franzò, F. Iacona, 'Stimulated emission in plasma-enhanced chemical vapour deposited silicon nanocrystals,' Physica E, vol. 16, pp. 297-308, (2003). [1.3] L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò , F. Priolo, and F. Iacona, 'Dynamics of stimulated emission in silicon nanocrystals' Appl. Phys. Lett., vol. 82, pp. 4636-4638, (2003). [1.4] K. Luterová, K. Dohnalová, V. Švrček and I. Pelant, 'Optical gain in porous silicon grains embedded in sol-gel derived SiO2 matrix under femtosecond excitation' Appl. Phys. Lett., vol. 84, pp. 3280-3282, (2004). [1.5] J. H. Shin, J. Lee, H. S. Han, J. H. Jhe, J. S. Chang, S. Y. Seo, H. Lee, and N. Park, 'Si nanocluster sensitization of Er-doped silica for optical amplet using top-pumping visible LEDs,' IEEE J. Sel. Top. Quantum Electron, vol. 12, pp. 783-796, (2006). Chapter 2 [2.1] L. T. Canham, “Si quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett., vol 57, pp. 1046-1048 (1990). [2.2] Al. L. Efros, M. Rosen, B. Averboukh, D. Kovalev, M. Ben-Chorin, and F. Koch “Nonlinear optical effects in porous silicon: Photoluminescence saturation and optically induced polarization anisotropy,” Phys. Rev. B, vol. 56, pp. 3875-3884 (1997). [2.3] A. Nakajima, Y. Sugita, K. Kawamura, H. Tomita, and N. Yokoyama, “Microstructure and optical absorption properties of Si nanocrystals fabricated with low-pressure chemical-vapor deposition,” J. Appl. Phys., vol. 80, pp. 4006-4011 (1996). [2.4] L. Brus, “Luminescence of Silicon Materials: Chains, Sheets, Nanocrystals, Nanowires, Microcrystals, and Porous Silicon,” J. Phys. Chem., vol. 98, pp. 3515-3581 (1994). [2.5] C. Delerue, G. Allan, and M. Lannoo, “Theoretical aspects of the luminescence of porous silicon,” Phys. Rev. B, vol. 48, pp. 11024-11036 (1993). [2.6] J. B. Khurgin, E. W. Forsythe, G. S. Tompa, and B. A. Khan , “Influence of the size dispersion on the emission spectra of the Si nanostructures,” Appl. Phys. Lett., vol. 69, pp. 1241-1243 (1996). [2.7] T. Takagahara and K. Takeda “Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materials,” Phys. Rev. B, vol. 46, pp. 15578-15581 (1992). [2.8] G. Ledoux, J. Gong, F. Huisken, O. Guillois and C. Reynaud, “Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement,” Appl. Phys. Lett., vol. 80, pp. 4834-4836 (2002). [2.9] P. Mutti, G. Ghislotti,S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda,E. Grilli and M. Guzzi, ” Room-temperature visible luminescence from Si nanocrystals in Si implanted SiO2 layers,” Appl. Phys. Lett., vol. 66, pp. 851-853 (1995). [2.10] T. Shimizu-Iwayama, K. Fujita, S. Nakao, K. Saitoh, T. Fujita and N. Itoh, “Visible photoluminescence in Si+-implanted silica glass,” J. Appl. Phys., vol. 75, pp. 7779-7783 (1994). [2.11] Y. Osaka, K. Tsunetomo, F. Toyomura, H. Myoren, and K. Kohno, “Visible photoluminescence from Si microcrystals embedded in SiO2 glass films,” Jpn. J. Appl. Phys., vol. 31, pp. L365 -L366 (1992). [2.12] S. Takeoka, M. Fujii and S. Hayashi, “Size-dependent photoluminescence from surface-oxidized Si nanocrystals in a weak confinement regime,” Phys. Rev. B, vol. 62, pp. 16820-16825 (2000). [2.13] C. J. Lin, C. K. Lin, C. W. Chang, Y. L. Chueh, H. C. Kuo , W. G. Diau, L.J. Chou and G. R. Lin, “Photoluminescence of Plasma Enhanced Chemical Vapor Deposition Amorphous Silicon Oxide with Silicon Nanocrystals Grown at Different Fluence Ratios and Substrate Temperatures,” Jpn. J. Appl. Phys., vol. 45, pp. 1040-1043 (2006). [2.14] C. H. Chang and G. R. Lin, “Strong blue photoluminescence obtained from 1.5-nm large Si nanocrystal in PECVD grown SiOx with O/Si composition ratio of 1.44,” Conference of Optics and Photonics Taiwan 2007, Oral paper C-3 (2007). [2.15] H. Nishikawa, R. Stahlbush and J. Stathis “Oxygen-deficient centers and excess Si in buried oxide using photoluminescence spectroscopy,” Phys. Rev. B, vol. 60, pp.15910-15918 (1999). [2.16] J. B. Khurgin, E. W. Forsythe, G. S. Tompa, and B. A. Khan , “Influence of the size dispersion on the emission spectra of the Si nanostructures,” Appl. Phys. Lett., vol. 69, pp. 1241-1243 (1996). [2.17] D. V. Tsu, G. Lucovsky, and B. N. Davidson, “Effect of the neighbors and alloy matrix on SiH stretching vibrations in the amorphous SiOr:H (0<r<2) alloy system,” Phys. Rev. B, vol. 40, pp. 1795-1805 (1989). [2.18] W. B. Pollard and G. Lucovsky, “Phonons in polysilane alloys,” Phys. Rev. B, vol. 26, pp. 3172-3280 (1989). [2.19] G. Lucovsky, “A structural interpretation of the infrared-absorption spectra of A-Si-H-O alloys,” Sol. Energy Mater., vol. 8, pp. 165-175 (1982). [2.20] G. Lucovsky and W. B. Pollard, “Local bonding of oxygen and hydrogen in A-Si=H=O thin film,” J. Vac. Sci. Technol. A, vol. 1, pp. 313-316, (1983). [2.21] P. G. Gai, S. S. Chao, Y. Takagi, G. Lucovsky, “Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition,” J. Vac. Sci. Technol. A, vol. 4, pp. 689-694 (1986). [2.22] L. He, T. Inokuma, Y. Kurata and S. Hasegawa, “Vibrational properties of SiO and SiH in amorphous SiOx:H films (0 ≤ x ≤ 2.0) prepared by plasma-enhanced chemical vapor deposition,” J. Non-Cryst. Solids, vol. 185, pp. 249-261 (1995). Chapter 3 [3.1] J. Linnros and N. Lalic, “High quantum efficiency for a porous silicon light emitting diode under pulsed operation,” Appl. Phys. Lett., vol. 66, pp. 3048-3050 (1995). [3.2] G. Franzò, A. Irrera, E.C.Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P.G. Fallica, F. Priolo, “Electroluminescence of silicon nanocrystals in MOS structures,” Appl. Phys. A, vol. 74, pp. 1-5 (2002). [3.3] M. Wang, X. Huang, J. Xu, W. Li, Z. Liu, and K. Chena, “Observation of the size-dependent blueshifted electroluminescence from nanocrystalline Si fabricated by KrF excimer laser annealing of hydrogenated amorphous silicon/amorphous-SiNx :H superlattices,” Appl. Phys. Lett., vol. 72, pp. 722-724 (1998). [3.4] O. Jambois, H. Rinnert, X. Devaux, and M. Vergnat, “Photoluminescence and electroluminescence of size-controlled silicon nanocrystallites embedded in SiO2 thin films,” J. Appl. Phys., vol. 98, pp. 046105-1-046105-3 (2005). [3.5] A. Irrera, F. Iacona, I. Crupi, C. D Presti, Giorgia Franz`o, C. Bongiorno, D. Sanfilippo, G. D. Stefano, A. Piana, P. G. Fallica, A. Canino and F. Priolo “Electroluminescence and transport properties in amorphous silicon nanostructures,” Nanotech. , vol. 17, pp. 1428–1436 (2006). [3.6] M. Wang, K. Chen, L. He, W. Li, J. Xu, and X. Huang, “Green electro- and photoluminescence from nanocrystalline Si film prepared by continuous wave Ar1 laser annealing of heavily phosphorus doped hydrogenated amorphous silicon film,” Appl. Phys. Lett., vol. 73, pp. 105-107 (1998). Chapter 4 [4.1] L. T. Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett, vol. 57, pp.1046-1048 (1993). [4.2] Q. Y. Ye, R. Tsu, and E. H. Nicollian, “Resonant tunneling via microcrystalline-silicon quantum confinement,” Phys. Rev. B, vol. 44, pp. 1806-1811 (1991). [4.3] G. G. Qin, A. P. Li, B. R. Zhang, and B. C. Li, “Visible electroluminescence from semitransparent Au film/extra thin Si-rich silicon oxide film/p-Si structure,” J. Appl. Phys., vol. 78, pp. 2006-2009 (1995). [4.4] H. Z. Song, X. M. Bao, N. S. Li, and J. Y. Zhang, “Relation between electroluminescence and photoluminescence of Si+-implanted SiO2,” J. Appl. Phys., vol. 82, pp. 4028-4032 (1997). [4.5] C. H. Lin, S. C. Lee, and Y. F. Chen, “Strong room-temperature photoluminescence of hydrogenated amorphous silicon oxide and its correlation to porous silicon,” Appl. Phys. Lett. , vol. 63, pp. 902-904 (1993). [4.6] L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature, vol. 408, pp. 440-444 (2000). [4.7] F. Iacona, G. Franzo, and C. Spinella, “Correlation between luminescence and structural properties of Si nanocrystals,” J. Appl. Phys., vol. 87, pp. 1295-1303 (2000). [4.8] G. Franzo, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P. G. Fallica, and F. Priolo, “Electroluminescence of silicon nanocrystals in MOS structures,” Appl. Phys. A, vol. 74, pp. 1-5 (2002). [4.9] C. J. Lin and G. R. Lin, “Defect-enhanced visible electroluminescence of multi-energv silicon-implanted silicon dioxide film,” IEEE J. Quantum Electronics, vol. 41, pp. 441-447 (2005). [4.10] G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys., vol. 97, 094306 (2005). [4.11] G. R. Lin, C. J. Lin, and H. C. Kuo, “Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array,” Appl. Phys. Lett., vol. 91, 093122 (1995) | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/42298 | - |
dc.description.abstract | 在本論文中,我們主要是利用電漿輔助化學氣相沉積(PECVD)技術法,藉由改變電漿的射頻功率等製程參數,提出可調控式富矽氧化矽(Si rich SiOx)薄膜層中光激螢光波長之方法。
經由穿透式電子顯微鏡X光能量散射光譜儀(TEM-XEDS)的結果指出當電漿射頻功率增加時,富矽氧化矽層中的氧/矽組成比例,也隨之逐漸提高。在經過高溫退火後,氧化矽層中的奈米矽晶粒的平均大小,隨著氧化矽層中的氧/矽組成比例增高而變小。換言之,可藉由改變電漿的射頻功率與高溫熱退火處理技術,來調控富矽奈米矽晶粒的顆粒大小。同時藉由不同尺寸的奈米粒子所產生之量子效應可得到對應於奈米矽晶粒大小相關的可調之光激螢光光譜波長,其螢光光譜範圍可從390 nm到780 nm。 此外,論文中也針對富矽奈米矽基金氧半發光二極體元件的電激螢光(EL)特性加以討論。由I-V結果顯示,在電漿射頻功率由50 W增加到70 W所製備的元件,其起始操作電壓均呈現非線性的增加,但是起始操作電場強度卻維持在6.6 × 10^6 V/cm,進一步經由光學顯微鏡拍攝此系列參數於正向電流注入下之發光圖像,可分別得到红色、綠色和藍色的電激螢光影像,這結果也驗證經由製成參數調控所製備的不同尺寸大小之富矽奈米矽粒子,於EL結果中呈現藍位移的現象。 | zh_TW |
dc.description.abstract | By changing the RF plasma power during the PECVD system, photoluminescence (PL) wavelength control of Si-rich SiOx film was proposed. The O/Si composition ratio increased as the RF power increased, which was confirmed by TEM XEDS. After high temperature annealing, the average sizes of the nc-Si embedded in the SiOx film decreased when the O/Si composition ratio in the SiOx film increased. We could control the O/Si composition ratio in the SiOx film by detuning RF plasma power in the PECVD system, which leads to different sizes of Si nanocrystals after high-temperature annealing. Hence, we could obtain nc-Si size-related and wavelength-tunable PL spectrum from 390 to 780 nm. Subsequently, the EL properties of PECVD–grown Si-rich SiOx based MOSLED was investigated. The turn-on voltage of the Si-rich SiOx film increased as the RF plasma power increased from 50 to 70 W, resulting in the same operational electric field strength at 6.6 × 10^6 V/cm for such nc-Si based devices. The EL microscopy images of device under RF plasma power of 50, 60 and 70 W revealed the red, green, and blue emission under forward bias current to the Si substrate. A significant size-dependent blueshift was clearly shown. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T00:58:28Z (GMT). No. of bitstreams: 1 ntu-97-R95941038-1.pdf: 1017726 bytes, checksum: 40d06d01fe17747f73a6bc5a745a2bea (MD5) Previous issue date: 2008 | en |
dc.description.tableofcontents | 口試委員會審定書 #
誌謝 1 中文摘要 2 ABSTRACT 3 CONTENTS 4 LIST OF FIGURES 6 LIST OF TABLES 10 Chapter 1 Introduction 11 1.1 Photoluminescence and Electroluminescence of Si nanocrystals (nc-Si) embeded SiO2 structure 11 1.2 Motivation 12 1.3 Organization of the Thesis 12 References 13 Chapter 2 Photoluminescence control of Si-rich SiOx film by detuning the plasma power during PECVD growth 14 2.1 Introduction 14 2.2 Sample preparation and experimental setup 15 2.3 Results and Discussion 16 2.3.1 Photoluminescence of PECVD-grown Si-rich SiOx 16 2.3.2 TEM results 19 2.3.3 TEM XEDS results 20 2.3.4 FTIR results 20 2.4 Conclusion 21 2.5 References 23 Chapter 3 Electroluminescence of PECVD–grown Si-rich SiOx based MOSLED 39 3.1 Introduction 39 3.2 Sample preparation and experimental setup 40 3.3 Results and Discussion 41 3.3.1 Mechanism of carrier tunneling in the MOS structure 41 3.3.2 I-V and P-I of PECVD-grown nc-Si based SiOx 43 3.3.3 EL pattern of PECVD-grown nc-Si based SiOx 44 3.4 Conclusion 45 3.5 References 46 Chapter 4 Influence of the thickness variation of the SiOx layer on the electrical properties of PECVD–grown Si-rich SiOx based MOSLED 54 4.1 Introduction 54 4.2 Sample preparation and experimental setup 55 4.3 Results and Discussion 56 4.3.1 I-V and P-I of PECVD-grown nc-Si based SiOx 56 4.3.2 EL of PECVD-grown nc-Si based SiOx 58 4.4 Conclusion 60 4.5 References 62 Chapter 5 Summary 69 REFERENCES 71 作者簡介 78 Publication List 79 | |
dc.language.iso | en | |
dc.title | 多色彩奈米矽基金氧半發光二極體 | zh_TW |
dc.title | Si Nanocrystal Based Colorful Metal-Oxide-Semiconductor
Light Emitting Diodes | en |
dc.type | Thesis | |
dc.date.schoolyear | 96-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 何志浩(Jr-Hau He),黃建璋(Jian-Jang Huang),陳啟昌(Chii -Chang Chen) | |
dc.subject.keyword | 富矽二氧化矽,奈米矽晶,金氧半二極體, | zh_TW |
dc.subject.keyword | Si-rich SiOx,Si nanocrystral,MOSLED, | en |
dc.relation.page | 79 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2008-08-04 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-97-1.pdf 目前未授權公開取用 | 993.87 kB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。