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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳奕君(I-Chun Cheng) | |
dc.contributor.author | Shuo-Hang Liu | en |
dc.contributor.author | 劉碩航 | zh_TW |
dc.date.accessioned | 2021-06-15T00:42:46Z | - |
dc.date.available | 2008-09-02 | |
dc.date.copyright | 2008-09-02 | |
dc.date.issued | 2008 | |
dc.date.submitted | 2008-09-01 | |
dc.identifier.citation | [1] David S. Ginley, Clark Bright, MRS Bulletin, vol. 25(8) (2000) 15.
[2] C. G. Granqvist, A. Hultaker, Thin Solid Films, 411 (2002) 1. [3] K. L. Chopra, Applied Physics Letters, 7(5) (1965) 140. [4] E. Ahilea, A. A. Hirsch, Journal of Applied Physics, 42(13) (1971) 5601. [5] D. I. Kenndey, R. E. Hayes, R. W. Alsford, Journal of Applied Physics, 38 (1966) 1986. [6] F. Streintz, Annals of Physics, (Leipzig), 9 (1902) 854. [7] K. Badeker, Annals of Physics, (Leipzig), 22 (1907) 749. [8] J.T. Littleton, U.S. Patent, 2,118,795 (1938). [9] H.A. McMaster, U.S. Patent, 2,429,420 (1947). [10] Roy. G. Gordon, MRS Bulletin, 25(8) (2000) 52. [11] S. Major, S. Kumar, M. Bhatnagar, K. L. Chopra, Applied Physics Letters, 49(7) (1986) 394. [12] H. Kawazoe, M. Yasukawa, H. Hyodo, M. Kurita, H. Yanagi, H. Hosono, Nature, 389 (1997),939-942 [13] F.A. Benko and F.P. Koffyberg, Journal of Physics and Chemistry of Solids,Vol. 45, Issue 1(1984),p. 57-59 [14] Wang Y., Gong H. Advance Mater CVD, 6(2000), 285 [15] Dae-Sung Kim and Se-Young Choi, phy. stat.sol.(a) 202, No.15 (2005), pp.167-169 [16] Gao Shanmin, Zhao Yan, Gou Pingping, et al., Nanotechnolegy, 14(2003), p.538 [17] Stauber R. E., Perkins J.D., et al., Electrochemistry Solid-State Letter, 2(1999), p.654. [18] Chares Kittel., Introduction to solid state physics, John Wiley & Sons. Inc. 7th ed., 1996. [19] I. Hamberg and C.G. Granqvist, Journal of Applied Physics, vol.60 (1986) , p.123. [20] B. J. Ingram, G. B. Gonzalez, D. R. Kammler, M. I. Bertoni, T. O. Mason, Journal of Electroceramics, vol.13 (2004),p.167 [21] K Tonooka, H. Bando, Y. Aiura, Thin Solid Films vol.445 (2003),p.327 [22] Hirishi Kawazoe, Hiroshi Yanagi, Kazushige Ueda, and Hideo Hosono, MRS Bulletin /August 2000, pp.28-36 [23] R. Nagarajan, N. Duan, M. K. Jayaraj, J. Li, K. A. Vanaja, A. Yokochi, A. Draeseke, J. Tate and A. W. Sleight,International Journal of Inorganic Materials Volume 3, Issue 3, June 2001, pp. 265-270 [24] M.V. Lalic, J. Mestnik-Filho, A.W.Carbonari, R.N.Saxena, Solid State Communications, vol.125 (2003), pp. 175-178 [25] M. Chen, Z. L. Pei, X. Wang, X. H. Liu, C. Sun, L. S. Wen, Journal of Physics D: Applied Physics, vol.33 (2000), p.2538. [26] http://www.pvd-coatings.co.uk/bombardment.gif [27] John A. Thornton, Journal of Vacuum Science Technology, 11 (1974) 666. [28] John A. Thornton, Journal of Vacuum Science Technology, 12 (1975) 830. [29]http://science-education.pppl.gov/SummerInst/SGershman/Structure_of_Glow_Discharge.pdf [30] Brian Chapman, “Glow Discharge Processes”, John Wiley & Sons, New York, 1980. [31] http://www.alacritas-consulting.com/sputtering_process.gif [32] Krishna Seshan, “Handbook of Thin Film Deposition Process and Technologies”, Noyes Publications, United States, 2002. [33] www.pvd-coatings.co.uk/unbalanced-magnetron.gif [34] H. K. Bowen, D. R. Uhlmann, W. D. Kingery, Introduction to Ceramics, Second edition (1988) [35] 透明導電膜, 楊明輝著, 藝軒出版社(2006) [36] 材料分析, 汪建民著,中國材料科學學會(民87) [37] 薄膜科技與應用, 羅吉宗著, 全華科技圖書股份有限公司 (民94) | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/42028 | - |
dc.description.abstract | 自然界中,玻璃是透明物質的代表,金屬則是導電物質的代表。因此兼具透明與導電兩種特性的材料,將可當作所謂的「透明電極」,廣泛地應用至半導體光電產業。例如:平面顯示器、薄膜太陽電池、透明觸控面板及發光二極體等產業。本研究利用自製銅鋁氧化物陶瓷靶及射頻磁控濺鍍法,於製程中改變各種製成參數,試圖沉積具有良好光電特性的CuAlO2薄膜於玻璃基板上。本研究以傳統陶瓷製程,藉著了解不同製程參數對陶瓷塊材之燒結性質變化的影響,製作尺寸精確的靶材。實驗結果顯示,以升溫速率2℃/min於1100℃持溫24小時燒結,可得到膨脹率約10%之2吋銅鋁氧CuAlO2陶瓷靶材。將自製靶材搭載自行組裝之射頻磁控濺鍍系統,在固定基板靶材間距7cm,腔體壓力2×10-3torr、沉積時間3小時下,探討射頻功率(W)、基板偏壓(V)及氧氣通量(S)等電漿製程對薄膜性質的影響。所有磁控濺鍍CuAlO2薄膜試片經X光繞射實驗證實為非晶結構。接著藉由添加參雜物鈣(Ca)10%原子比例改變靶材成分以改善薄膜特性。本實驗其最佳條件為鈣(Ca)10%原子比例摻雜,射頻功率120W,基板偏壓0V,氧氣通量10sccm,所得膜厚157nm,電阻率ρ=60.37Ωcm且在可見光範圍有60%的穿透率。 | zh_TW |
dc.description.abstract | In nature, glass is the representative of the transparent substance; metal is the typical conducting material. Therefore, a matter exhibits both transparent and good electrical conducting properties is what so called “transparent electrode”. Transparent conducting oxide is extensively applied to the semiconductor and photovoltaic industry, such as flat-panel displays, thin film solar cells, touch panels, and light-emitting diode. We tested several kinds of process parameters to obtain good quality CuAlO2 thin films using custom-made CuAlO2 ceramic targets and RF sputtering method. Under a fixed target-to-substrate distance (7cm), influence of several kinds of parameters on electrical and optical properties, such as the RF power (P), DC bais (V) of the substrate, O2 flow (S) were investigated. All magnetron sputtering-deposited CuAlO2 in this study exhibits amorphous structure. We improved the conductivity of the films by additional doping (Ca).Best film was obtained using the following fabrication process parameters: 10 at% Ca doping target ,RF power of 120W, no DC bias, and oxygen ratio [O2/(O2+Ar2)] of 1/3. Out best achieved resistivity is 60.39 Ohm-cm; and the best averaged transmittance is about 60% within the wavelength range of visible light for film of 157 nm thickness. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T00:42:46Z (GMT). No. of bitstreams: 1 ntu-97-R95941080-1.pdf: 2613937 bytes, checksum: e9e75a676df842c48348fb1669f56f7f (MD5) Previous issue date: 2008 | en |
dc.description.tableofcontents | 口試委員會審定書 i
誌謝 ii 中文摘要 iii 英文摘要 iv 第一章 緒論 1 1.1 前言 1 1.2 實驗目的 3 第二章 文獻回顧 5 2.1 透明導電氧化物 5 2.2 P型透明導電氧物 8 2.3 P型透明導電氧化物的選擇 9 2.4非化學劑量及摻雜對於Delafossite結構的影響 13 2.5透明導電氧化物的導電機制 14 2.6透明導電氧化物薄膜的光學性質 15 2.7電漿與薄膜沉積 16 2.8射頻磁控濺鍍法 21 2.9陶瓷動力燒結學 23 第三章 實驗方法與原理 27 3.1 CuAlO2陶瓷靶材燒結 27 3.1.1 小型胚體製作 28 3.1.2 密度及膨脹率測量 30 3.1.3 X-Ray結構分析 31 3.2 玻璃基板清洗 31 3.3 濺鍍儀器以及濺鍍程 31 3.4 CuAlO2透明導電膜製備 33 3.4.1 X-Ray薄膜結構分析 34 3.4.2 霍爾電性量測 35 3.4.3 光學特性量測 37 3.4.4 ESCA化學組成成分分析 38 第四章 結果與討論 40 4.1 靶材特性分析 40 4.1.1燒結密度以及膨脹率分析結果 40 4.1.2 X-ray結構分析 44 4.2利用CuAlO2靶材所得薄膜之特性及討論 46 4.2.1 X-Ray薄膜結構分析 46 4.2.2膜厚及沉積速率 46 4.2.3薄膜電性量測 49 4.2.4薄膜光學性質 51 4.3利用CuCa0.1Al0.9O2靶材所得薄膜之特性及討論 52 4.3.1 X-Ray薄膜結構分析 52 4.3.2膜厚及沉積速率 54 4.3.3薄膜電性量測 55 4.3.4薄膜光學性質 57 4.3.5 薄膜ESCA(XPS)化學組成成分分析 60 第五章 結論 63 第六章 參考文獻 65 | |
dc.language.iso | zh-TW | |
dc.title | P型透明導電氧化物薄膜製備及
其電性與光學特性之探討 | zh_TW |
dc.title | Fabrication of p-type transparent conducting oxide thin films and investigation of its optical and electrical properties | en |
dc.type | Thesis | |
dc.date.schoolyear | 96-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 陳奕君(Jian-Zhang Chen),楊木榮(Mu-Rong Yang) | |
dc.subject.keyword | P型,透明導電膜,濺鍍, | zh_TW |
dc.subject.keyword | p type,transparent conducting oxide,sputtering, | en |
dc.relation.page | 67 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2008-09-01 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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