請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/41764完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李君浩(Jiun-Haw Lee) | |
| dc.contributor.author | Chi-Feng Lin | en |
| dc.contributor.author | 林奇鋒 | zh_TW |
| dc.date.accessioned | 2021-06-15T00:30:26Z | - |
| dc.date.available | 2016-09-19 | |
| dc.date.copyright | 2011-09-19 | |
| dc.date.issued | 2011 | |
| dc.date.submitted | 2011-08-15 | |
| dc.identifier.citation | 1. R. F. Service, Science, 309, 548 (2005).
2. M. A. Green, K. Emery, Y. Hishikawa, and W. Warta, Prog. Photovolt: Res. Appl. 19, 84 (2011). 3. W. Shockley and H. J. Queisser, J. Appl. Phys. 32, 510 (1961). 4. M. Gratzel, Inorg. Chem. 44, 6841 (2005). 5. C. W. Tang, Appl. Phys. Lett. 48, 183 (1986). 6. G. Yu, J. Gao, J.C. Hummelen, F. Wudl, and A. J. Heeger, Science 270, 1789 (1995). 7. J. Nelson, Curr. Opin. Solid State Mater. Sci. 6, 87 (2002). 8. R. F. Service, Science, 332, 293 (2011). 9. H. Y. Chen, J. Hou, S. Zhang, Y. Liang, G. Yang, Y. Yang, L. Yu, Y. Wu, and G. Li, Nature Photon. 3, 649 (2009). 10. P. Peumans, A. Yakimov, and S. R. Forrest, J. Appl. Phys. 93, 3693 (2003).' 11. L. J. A. Koster, E. C. P. Smits, V. D. Mihailetchi, and P. W. M. Blom, Phys. Rev. B 72, 085205 (2005). 12. B. P. Rand, D. P. Burk, and S. R. Forrest, Phys. Rev. B 75, 115327 (2007). 13. T. Kietzke, Adv. Optoelectron. 2007 2007, 1 (2007). 14. B. P. Rand, J. Genoe, P. Heremans, and J. Poortmans, Prog. Photovolt: Res. Appl.15, 659 (2007). 15. A. Gadisa, M. Svensson, M. R. Adnersson, and O. Liganas, Appl. Phys. Lett. 84, 1609 (2004). 16. M. C. Scharber, D. Muhlbacher, M. Koppe, P. Denk, C. Waldauf, A. J. Heeger, and J. Barbec, Adv. Mater. 18, 789 (2006). 17. Z. T. Liu, M. F. Lo. T. W. Ng, V. A. Roy, C. S. Lee, and S. T. Lee, Appl. Phys. Lett. 95, 093307 (2009). 18. K. Vandewal, K. Tvingstedt, A. Gadisa, O. Inganas, and J. V. Manca, Nat. Mater. 8, 904 (2009). 19. L. A. Koster, V. K. Mihailetchi. R. Ramaker, and P. W. M. Blom, Appl. Phys. Lett. 86, 123509 (2005). 20. T. Offermans, S. C. J. Meskers, and R. A. Janssen, Chem. Phys. 308, 125 (2005). 21. P. Peumans and S. R. Forrest, Chem. Phys. Lett. 398, 27 (2004). 22. A. C. Morteani, P. Sreearunothai, L. M. Herz, R. H. Friend, and C. Silva, Phys. Rev. Lett. 92, 247402 (2004). 23. T. Offermans, P. A. van Hal, S. C. J. Meskers, M. M. Koetse, and R. A. J. Janssen, Phys. Rev. B 72, 045213 (2005). 24. M. D. Perez, C. Borek, S. R. Forrest, and M. E. Thompson, J. Am. Chem. Sol. 131, 9281 (2009). 25. P. Peumans and S. R. Forrest, Appl. Phys. Lett. 79, 126 (2001). 26. P. Peumans, V. Bulovi?, and S.R. Forrest, Appl. Phys. Lett. 76, 2650 (2000). 27. J. Drechsel, B. Mannig, F. Kozlowski, M. Pfeiffer,; K. Leo, and H. Hoppe, Appl. Phys. Lett. 86, 244102 (2005). 28. A. Yakimov, S.R. Forrest, Appl. Phys. Lett. 80, 1667 (2002). 29. K. Kawano, N. Ito, T. Nishimori, and J. Sakai, Appl. Phys. Lett. 88, 073514 (2006). 30. S. Sista, M. H. Park, Z. Hong, Y. Wu, J. Hou, W. L. Kwan, G. Li, and Y. Yang, Adv. Mater. 22, 380 (2009). 31. M. Y. Chan, S.L. Lai, M.K. Fung, C.S. Lee, and S.T. Lee, Appl. Phys. Lett. 90, 023504 (2007). 32. G. P. Kushto, W. Kim, and Z. H. Kafafi, Appl. Phys. Lett. 86, 093502 (2005). 33. T. Taima, J. Sakai, T. Yamanari, K. Saito, Jpn. J. Appl. Phys. 45, 995 (2006). 34. K. Schulze, C. Uhrich, R. Schuppel, K. Leo, M. Pfeiffer, E. Brier, E. Reinold, and P. Bauerle, Adv. Mater. 18, 2872 (2006). 35. S. Roquet, A. Cravino, P. Leriche, O. Al?v?que, P. Frere, and J. Roncali, J. Am. Chem. Sol. 128, 3459 (2006). 36. A. Cravino, P. Leriche, O. Al?v?que, S. Roquet, and J. Roncali, Adv. Mater. 18, 3033 (2006). 37. R. F. B. Salzman, B. P. Rand, and S. R. Forrest, Appl. Phys. Lett. 91, 013508 (2007). 38. T. Osasa, S. Yamamoto, and M. Matsumura, Adv. Funct. Mater. 17, 2937 (2007). 39. J. Peet, J. Y. Kim, N. E. Coates, W. L. Ma, D. Moses, A. J. Heeger, and G. C. Bazan, Nat. Mater. 6, 497 (2007). 40. H. Kageyama, H. Ohishi, M. Tanaka, Y. Ohmori, and Y. Shirota, Appl. Phys. Lett. 94, 063304 (2009).' 41. C. W. Chu, V. Shrotriya, G. Li, and Y. Yang, Appl. Phys. Lett. 88, 153504 (2006). 42. H. Kumar, P. Kumar, R. Bhardwaj, G. D. Sharma, S. Chand, S C Jain and V. Kumar, J. Phys. D 42, 15103 (2009). 43. N. Li, B. E. Lassiter, R. R. Lunt, G. Wei, and S. R. Forrest, Appl. Phys. Lett. 94, 023307 (2009). 44. G. Zhang, W. Li, B. Chu, L. Chen, F. Yan, J. Zhu, Y. Chen, and C. S. Lee, Appl. Phys. Lett. 94, 143302 (2009). 45. K. V. Chauhan, P. Sullivan, J. L. Yang, and T. S. Jones, J. Phys. Chem. C 114, 3304 (2010). 46. S. R. Forrest, MRS. Bull. 30, 28 (2005). 47. J. Dai, X. Jiang, H. Wang, and D. Yan, Appl. Phys. Lett. 91, 253503 (2007). 48. B. O’Connor, K. H. An, K. P. Pipe, Y. Zhao, and M. Shtein, Appl. Phys. Lett. 89, 233502 (2006). 49. S. B. Rim, S. Zhao, S. R. Scully, M. D. McGehee, and P. Peumans, Appl. Phys. Lett. 91, 243501 (2007). 50. Y. Zhou, F. Zhang, K. Tvingstedt, W. Tian, and O. Inganas, Appl. Phys. Lett. 93, 033302 (2008). 51. K. Tvingstedt, S. D. Zilio, O. Inganas, and M. Tormen, Opt. Express 16, 21608 (2008). 52. S. Ruhle, S. Greenwald, E. Koren, and A. Zaban, Opt. Express 16, 21801 (2008). 53. K. L. Mutolo, E. I. Mayo, B. P. Rand, S. R. Forrest, and M. E. Thompson, J. Am. Chem. Sol. 128, 8108 (2006). 54. S. Sista, Y. Yao, Y. Yang, M. L. Tang, Z. Bao Appl. Phys. Lett. 91, 223508 (2007). 55. Z. T. Liu, M. F. Lo, H. B. Wang, T. W. Ng, V. A. L. Roy, C. S. Lee, and S. T. Lee, Appl. Phys. Lett. 95, 093307 (2009). 56. S. R. Forrest, Chem. Rev. 97, 1793 (1997). 57. V. Shrotriya, G. Li, Y. Yao, T. Moriarty, K. Emery, and Y. Yang, Adv. Funct. Mater. 16, 2016 (2006). 58. Standard ASTM G173-03. Available online: http://www.astm.org/DATABASE.CART/HISTORICAL/G173-03.htm (accessed on 27 December 2010). 59. Standard ASTM E927-05. Available online: http://www.astm.org/Standards/E927.htm (accessed on 27 December 2010). 60. Standard ASTM E948-05a. Available online: http://www.astm.org/DATABASE.CART/HISTORICAL/E948-05A.htm (accessed on 27 December 2010). 61. Standard ASTM E1021-06. Available online: http://www.astm.org/DATABASE.CART/HISTORICAL/E1021-06.htm (accessed on 27 December 2011). 62. M. A. Lampert, Phys. Rev. 103, 1648 (1956). 63. M. A. Lampert and P. Mark, Current injection in solids (Academic press, New York, 1970). 64. N. F. Mott and R. W. Gurney, Electronic Processes in Ionic Crystals (Oxford University Press, New York, 1940). 65. L. S. Roman, W. Mammo, L. A. A. Pettersson, M. R. Andersson, and O. Inganas, Adv. Mater. 10, 774 (1998). 66. J. H. Schon, C. Kloc, and B. Batlogg, Appl. Phys. Lett. 77, 2473 (2000). 67. S. Yoo, B. Domercq, and B. Kippelen, Appl. Phys. Lett. 85, 5427 (2004). 68. Y. Shirota, J. Mater. Chem. 10, 1 (2000). 69. Y. Shirota, J. Mater. Chem. 15, 75 (2005). 70. H. Kageyama, H. Ohishi, M. Tanaka, Y. Ohmori, and Y. Shirota, Adv. Func. Mater. 19, 3948 (2009). 71. M. Kinoshita, N. Fujii, T. Tsuzuki, and Y. Shirota, Synth. Met. 121, 1571 (2001). 72. B. Cravino, S. Roquet, O. Al?v?que, P. Fr?re, and J. Roncali, Chem. Mater. 18, 2584 (2006). 73. Aleveque, P. Leriche, N. Cocherel, P. Fr?re, A. Cravino, and J. Roncali, Solar Energy Mater. Solar Cells 92, 1170 (2008). 74. B. He, Q. He, Y. Yi, G. Wu, F. Bai, Z. Shuai, and Y. Li, J. Mater. Chem. 18, 4085 (2008). 75. H. C. Yeh, S. J. Yeh, and C. T. Chen, Chem. Comm. 2632 (2003). 76. H. C. Yeh, W. C. Wu, Y. S. Wen, D. C. Dai, J. K.Wang, and C. T. Chen, J. Org. Chem. 69, 6455 (2004). 77. C. T. Chen, Chem. Mater. 16, 5389 (2004). 78. Y. T. Lee, C. L. Chiang, and C. T. Chen, Chem. Commun. 217 (2008). 79. Y. Hong, J. W. Y. Lam, and B. Z. Tang, Chem. Commun. 4332 (2009). 80. Q. L. Song, C. M. Li, M. L. Wang, X. Y. Sun, and X. Y. Hou, Appl. Phys. Lett. 90, 071109 (2007). 81. H. Gommans, B. Verreet, B. P. Rand, R. Muller, J. Poortmans, P. Heremans, and J. Genoe, Adv. Funct. Mater. 18, 3686 (2008). 82. D. J. Brabec, A. Cravino, D. Meissner, N. S. Sariciftci, T. Fromherz, M. T. Rispens, L. Sanchez, and J. C. Hummelen, Adv. Func. Mater. 11, 374 (2001). 83. V. D. Mihailetchi, P. W. M. Blom, J. C. Hummelen, and M. T. Rispens, J. Appl. Phys. 94, 6849 (2003). 84. M. F. Lo, T. W. Ng, T. Z. Liu, V. A. L. Roy, S. L. Lai, M. K. Fung, C. S. Lee, and S. T. Lee, Appl. Phys. Lett. 96, 113303 (2010). 85. S. Heutz, P. Sullivan, B. M. Sanderson, S. M. Schultes, and T. S. Jones, Solar Enregy Mater. Solar Cells 83, 229 (2004) 86. L. A. A. Pettersson, L. S. Roman, and Olle Inganas, J. Appl. Phys. 86, 487 (1999). 87. J. Nelson, J. Kirkpatrick, and P. Ravirajan, Phys. Rev. B 69, 035337 (2004). 88. W. Tress, A. Petrich, M. Hummert, M. Hein, K. Leo, and M. Riede, Appl. Phys. Lett. 98, 063301 (2011). 89. E. Cicoira, C. Santato, F. Dinelli, M. Murgia, M. A. Loi, F. Biscarini, R. Zamboni, P. Heremans, and M. Muccini, Adv. Func. Mater. 15, 375 (2005). 90. J. Yang and T. Q. Nguyen, Org. Electron. 8, 566 (2007). 91. S. W. Liu, C. C. Lee, C. H. Wang, J. H. Lee, C. T. Chen, and J. K. Wang, Chem. Phys. Lett. 474, 207 (2009). 92. S. Y. Yang, K. Shin, and C. E. Park, Adv. Func. Mater. 15, 1806 (2005). 93. H. Gommans, D. Cheyns, T. Aernouts, C. Girotto, J. Poortmans, and P. Heremans, Adv. Func. Mater. 17, 2653 (2007). 94. X. Tong, B. E. Lassiter, and S. R. Forrest, Org. Electron. 11, 705 (2010). 95. G. Kumar, P. Kumar, R. Bhardwaj, G. D. Sharma, S. Chand, S C Jain and V. Kumar, J. Phys. D 42, 15103 (2009). 96. A. C. Mayer, M. T. Lloyd, D. J. Herman, T. G. Kasen, and G. G. Malliaras, Appl. Phys. Lett. 85, 6272 (2004). | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/41764 | - |
| dc.description.abstract | 本篇論文旨要藉由施體材料調變製備具有高開路電壓以及高效率之平面異質界面小分子有機太陽能電池元件。首先我們引入一新型態有機施體材料bis(4-(N-(1-naphthyl)phenylamino)-phenyl)fumaronitrile (NPAFN)，相較於有機太陽能電池中常見的施體材料（CuPc），NPAFN具有較高的最高電子佔有軌域，搭配電子受體材料碳60時，可有效提升與C60間之能階差，由傳統CuPc/C60結構之0.6 eV提升至NPAFN/C60結構之1.2 eV，提高元件開路電壓之理論極限並進一步提升元件效率。再經由適當的膜厚及鍍率調變後，其最佳化元件結構具有0.96 V之開路電壓以及2.27%之功率轉換效率。
除了引入新型態有機材料外，我們同時使用傳統具有高開路電壓之有機太陽能電池結構SubPc/C60/BCP，藉由控制蒸鍍鍍率，調變SubPc膜層的之分子排列，藉此改變SubPc之能階分佈以及分子間作用力大小，有效的增加SubPc/C60間的能階差距並減少元件之暗態逆向飽和電流，提升元件的開路電壓以及功率轉換效率，其最佳化之元件具有1.06 V之開路電壓以及3.96%之元件效率。此外，藉由在陽極以及SubPC間引入一層超薄之NPAFN薄膜作為激子阻擋層，可有效降低SubPc膜曾中產生之激子遭陽極淬熄的機率，將SubPc吸收波段之內部量子轉換效率至接近100%，大幅提昇元件之光電流產出。藉由調變NPAFN阻擋層之膜厚，其NPAFN/SubPc/C60/BCP平面異質結構之最佳化元件具有1.09 V之開路電壓，7.05 mA/cm2之短路電流以及4.86%之元件效率。 | zh_TW |
| dc.description.abstract | The objective of this dissertation is to fabricate the planar small molecular organic photovoltaic (OPV) devices with high open-circuit voltage (VOC) by engineering the donor layers of the device.
The high VOC OPV device was fabricated by utilizing the new materiall bis(4-(N-(1-naphthyl)phenylamino)-phenyl)fumaronitrile (NPAFN) as the donor materiall and substituted for the conventional donor material cooper phthalocyanine (CuPc) in the OPV device. Compared with the conventional CuPc/fullerene OPV device, the energy level different between the highest occupied molecular orbital (HOMO) of NPAFN and the lowest unoccupied molecular orbital (LUMO) of fullerene (C60) was increased, thus increased VOC and improves the device efficiency. Beside the introduction of the new organic donor material, the high efficiency and high VOC organic photovoltaic device was also fabricated by controlling the deposition rate of SubPc in the conventional SubPc/C60 based OPV device. The molecular packing of SubPc was changed obviously with the deposition rate and thus influenced the energy level of SubPc which energy level different between SubPc HOMO level and C60 LUMO level and also reduce the energy barrier between ITO anode and SubPc, which increase the VOC to 1.06V and enhance the fill factor to 65, result in the obviously improve of the device efficiency to 3.95%. Further more, JSC and the efficiency of SubPc/C60 based OPV device was further improved by inserting an ultra thin NPAFN as the donor buffer layer between the ITO anode and SubPc layer. Due to the exciton blocking characteristic of NPAFN, the JSC value increases and JS value decreases monotonically with increasing NPAFN thickness. However, the low hole mobility of NPAFN results in the increase of serial resistance NPAFN, and hence a dramatically decrease in fill factor. An optimized efficiency value of 4.83% was obtained with 2-nm NPAFN. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T00:30:26Z (GMT). No. of bitstreams: 1 ntu-100-F94941089-1.pdf: 2106748 bytes, checksum: 42b0a034c87be11b42a0297727e2e2f7 (MD5) Previous issue date: 2011 | en |
| dc.description.tableofcontents | 誌謝 i
摘要 iii Abstract iv Content vi Figure Content ix Table Content xiv Chapter 1 Introduction 1 1.1 Overview 1 1.2 Basic Principle 4 1.2.1 Quantum conversion efficiency 4 1.2.2 Power conversion efficiency and equivalent circuit 7 1.2.3 Origin of Open-Circuit Voltage 11 1.3 Device Improvements 14 1.3.1 Device architectures 14 1.3.2 Improvement of VOC 16 1.4 References 18 Chapter 2 Fabrication and Measurement Systems 23 2.1 Introduction 23 2.2 Device Fabrication 23 2.2.1 Substrate preparation 23 2.2.2 Fabrication System 25 2.3 Device Measurement Systems 27 2.3.1 Measurement of Power Conversion Efficiency 27 2.3.2 Measurements of External Quantum Efficiency and Internal Quantum Efficiency 29 2.4 Material Characteristics Analysis Equipments 32 2.4.1 Absorption and Energy Level Measurement 32 2.4.2 Measuring of thin film morphology 33 2.4.3 SCLC and Carrier Mobility Measurements 34 2.5 References 36 Chapter 3 High VOC OPV device with NPAFN as the donor material 38 3.1 Introduction 38 3.2 Material Characteristics 40 3.3 NPAFN based OPV device 43 3.3.1 Device structure 44 3.3.2 Optimization of donor/acceptor thickness 46 3.3.3 Deposition rate control of NPAFN 54 3.4 Conclusion 67 3.5 Reference 67 Chapter 4 Deposition rate dependence on device performances of SubPc based OPV device 72 4.1 Introduction 72 4.2 Material Characteristics 73 4.3 Deposition rate dependence of SubPc/C60 based devices 79 4.4 Conclusion 86 4.5 Reference 86 Chapter 5 High VOC OPV device with donor buffer layer 88 5.1 Introduction 88 5.2 Experiments 88 5.3 Results and discussions 92 5.4 Conclusions 97 Chapter 6 Conclusion 99 6.1 Conclusion 99 6.2 Future work 101 6.3 Reference 101 | |
| dc.language.iso | en | |
| dc.subject | 施體阻擋層 | zh_TW |
| dc.subject | 有機太陽能電池 | zh_TW |
| dc.subject | 開路電壓 | zh_TW |
| dc.subject | 施體材料 | zh_TW |
| dc.subject | 鍍率 | zh_TW |
| dc.subject | 分子排列 | zh_TW |
| dc.subject | donor material | en |
| dc.subject | donor buffer layer | en |
| dc.subject | molecular packing | en |
| dc.subject | deposition rate | en |
| dc.subject | organic photovoltaic devices | en |
| dc.subject | open-circuit voltage | en |
| dc.title | 高開路電壓平面異質界面有機光伏元件之施體工程 | zh_TW |
| dc.title | Donor engineering of planar heterojunction organic photovoltaic device with high open circuit voltage | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 99-2 | |
| dc.description.degree | 博士 | |
| dc.contributor.oralexamcommittee | 林麗瓊(Li-Chyong Chen),王俊凱(Juen-Kai Wang),黃慶怡(Ching-I Huang),陳錦地(Chin-Ti Chen) | |
| dc.subject.keyword | 有機太陽能電池,開路電壓,施體材料,鍍率,分子排列,施體阻擋層, | zh_TW |
| dc.subject.keyword | organic photovoltaic devices,open-circuit voltage,donor material,deposition rate,molecular packing,donor buffer layer, | en |
| dc.relation.page | 102 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2011-08-15 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電機工程學研究所 | zh_TW |
| 顯示於系所單位： | 電機工程學系 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-100-1.pdf 未授權公開取用 | 2.06 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。