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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李允立(Yun-Li Li) | |
| dc.contributor.author | Shin-Yu Liu | en |
| dc.contributor.author | 劉心煜 | zh_TW |
| dc.date.accessioned | 2021-06-14T17:07:43Z | - |
| dc.date.available | 2008-07-30 | |
| dc.date.copyright | 2008-07-30 | |
| dc.date.issued | 2008 | |
| dc.date.submitted | 2008-07-27 | |
| dc.identifier.citation | [1] H. J. Round, “A note on carborundum”, Electrical World 49,309 (1907)
[2] N. Holonyak, Jr. and S.F.Bevacqua, “Coherent (visible) light emission from Ga(As1–xPx) junctions”, Appl. Phys. Lett.1,4 (1962) [3] Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa and Shin-ichi Nagahama, Jpn. J. Appl. Phys. 34, L797-L799 (1995) [4] Juza R. and Hahn H. 'On the crystal structure of Cu3N, GaN and InN (translated from Germany)' Zeitschrift fuer anorganische und allgemeine Chemie 239, 282 (1938) [5] E. F. Schubert, 'Light-Emitting Diodes' 2nd ed., Cambridge (2006) [6] Maruska H. P. and Tietjen J. J. 'The preparation and properties of vapour-deposited single-crystalline GaN' Appl. Phys. Lett. 15, 327 (1969) [7] LED magazine [8] http://www.apple.com.tw [9] Hiroshi Amano, Masahiro Kito, Kazumasa Hiramatsu and Isamu Akasaki, 'P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) ', Jpn. J. Appl. Phys. 28, pp. L2112-L2114 (1989) [10] Qian W. , Skowronski M., Rohrer G.R.Structural defects and their relationship to nucleation of GaN thin films in III-Nitride, SiC, and Diamond Materials for Electronic Devices. Eds. Gaskill D.K, Brandt C.D. and Nemanich R.J., Material Research Society Symposium Proceedings, Pittsburgh, PA. 423, 475-486 (1996) [11] D. S. Wuu, W. K. Wang,a K. S. Wen, S. C. Huang, S. H. Lin, R. H. Horng, Y. S. Yu,d and M. H. Pand 'Fabrication of Pyramidal Patterned Sapphire Substrates for High-Efficiency InGaN-Based Light Emitting Diodes' Journal of The Electrochemical Society, 153, G765-G770 (2006) [12] G. Ali Mansoori 'Principle of nanotechnology' 1st ed., World Scientific [13] 林鴻明, '奈米材料未來的發展趨勢', 大同大學材料工程學系 [14] http://www.britishmuseum.org/ [15] R. Micheletto, H. Fukuda, and M. Ohtsu, 'A Simple Method for the Production of a Two-Dimensional, Ordered Array of Small Latex Particles', Langmuir 11, 3333-3336 (1995) [16] Yadong Yin, Yu Lu, and Younan Xia, 'A Self-Assembly Approach to the Formation of Asymmetric Dimers from Monodispersed Spherical Colloids', J. Am. Chem. Soc. ,123, 771-772 (2001) [17] Yadong Yin, Yu Lu, Byron Gates, and Younan Xia, 'Template-Assisted Self-Assembly: A Practical Route to Complex Aggregates of Monodispersed Colloids with Well-Defined Sizes, Shapes, and Structures', J. Am. Chem. Soc., 123, 8718-8729 (2001) [18] Takashi Yamasaki, Tesuo Tsutsui, 'Fabrication and Optical Properties of Two-Dimensional Ordered Arrays of Silica Microspheres', Jpn. J. Appl. Phys., Vol.38, 5916-5921 (1999) [19] J. Rybczynski, U. Ebels, M. Giersig, 'Large-scale, 2D arrays of magnetic nanoparticles', Colloids and Surfaces A: Physicochem. Eng. Aspects, 219, 1-6 (2003) [20] Koungmin Ryu, Alexander Badmaev, Lewis Gomez, Fumiaki Ishikawa, Bo Lei, and Chongwu Zhou, 'Synthesis of Aligned Single-Walled Nanotubes Using Catalysts Defined by Nanosphere Lithography', J. AM. CHEM. SOC. 9 129, NO. 33, 10105, (2007) [21] Takashi Ogi, Luis Balam Modesto-Lopez, Ferry Iskandar, Kikuo Okuyama, 'Fabrication of a large area monolayer of silica particles on a sapphire substrate by a spin coating method', Colloids and Surfaces A: Physicochem. Eng. Aspects 297, 71–78 (2007) [22] Kazumasa Ueda, Yoshihiko Tsuchida, Nobuhiro Hagura, Ferry Iskandar, Kikuo Okuyama and Yoshiyuki Endo, 'High performance of GaN thin films grown on sapphire substrates coated with a silica-subμm-sphere monolayer film', APPLIED PHYSICS LETTERS 92, 101101 (2008) [23] N. D. Denkov, 0. D. Velev, P. A. Kralchevsky, I. B. Ivanov, H. Yoshimura and K. Nagayamat, 'Mechanism of Formation of Two-Dimensional Crystals from Latex Particles on Substrates' Langmuir,8, 3183-3190 (1992) [24] Antony S. Dimitrov, Ceco D. Dushkin, Hideyuki Yoshimura, and Kuniaki Nagayama, 'Observations of Latex Particle Two-Dimensional-Crystal Nucleation in Wetting Films on Mercury, Glass, and Mica', Langmuir, 10, 432-440 (1993) [25] Ferenc Ja’rai-Szabo’ , Simion Astilean, Zolta’n Ne’da, 'Understanding self-assembled nanosphere patterns', Chemical Physics Letters, 408, 241–246 (2005) [26] Anjeanette D. Ormonde, 'Nanosphere Lithography: I. Fabrication and Characterization of Large Area Silver Nanoparticle Arrays. II. Electrochemical Tuning of Silver Nanoparticle Size. III. Nanoparticle Shapes as a Function of Size for Ag, Au, Co, Pd, and Pt Nanoparticles.', Dissertation for the degree DOCTOR OF PHILOSOPHY, December (2001) [27] Anjeanette D. Ormonde, Erin C. M. Hicks, Jimmy Castillo, and Richard P. Van Duyne, 'Nanosphere Lithography: Fabrication of Large-Area Ag Nanoparticle Arrays by Convective Self-Assembly and Their Characterization by Scanning UV-Visible Extinction Spectroscopy', Langmuir, 20, 6927-6931 (2004) [28] Whitney, A. V.; Myers, B. D.; Van Duyne, R. P., 'Sub-100 nm Triangular Nanopores Fabricated with the Reactive Ion Etching Variant of Nanosphere Lithography and Angle-Resolved Nanosphere Lithography' Nano Lett., (Letter); 4(8), 1507-1511 (2004) [29] John R. Vig, 'UV/Ozone cleaning of surfaces', J. Vac. Sci. Technol. A 3 (3), May/Jun (1985) [30] Fang-Yu Chou (周芳瑜), 'Fabrication of Metallic Nanostructure using Nanosphere Lithography', Master Thesis, National Cheng Kung University (國立成功大學), July, (2007). [31] Xiao, “Introduction to semiconductor manufacturing technology,” Prentice Hall [32] D. W. Kim, C.H. Jeong, K. N. Kim, H. Y. Lee, H. S. Kim, Y. J. Sung and G. Y. Yeom, “High rate sapphire (Al2O3) etching in inductively coupled plasmas using axial external magnetic field,” Thin Solid Films, 435, 242-246 (2003) [33] C.H. Jeong, D.W. Kim, H.Y. Lee, H.S. Kim, Y.J. Sung and G.Y. Yeom, “Sapphire etching with BCl3/HBr/Ar plasma surface & coatings technology,”Surface and Coatings Technology, 171, 280-284 (2003) [34] L. Liu and J.H. Edgar, “Substrates for gallium nitride epitaxy,” Materials Science and Engineering R, 37 p.61 (2002) [35] F. Dwikusuma, D. Saulys, and T.F. Kuech, “Study on sapphire surface preparation for III-nitride heteroepitaxial growth by chemical treatments,” J. Electrochem. Soc. 149, G603 (2002) [36] 吳志凌,“圖案化藍寶石基板之濕式蝕刻”,國立台灣大學 光電所 碩士研究論文 (2007) [37] 羅閔馨, “濕式化學蝕刻技術用於氮化鎵發光二極體藍寶石基板移除與圖案化藍寶石基板之製作”,國立台灣大學 光電所 碩士研究論文 (2008) [38] Alyson V. Whitney, Benjamin D. Myers, and Richard P. Van Duyne, “Sub-100 nm Triangular Nanopores Fabricated with the Reactive Ion Etching Variant of Nanosphere Lithography and Angle-Resolved Nanosphere Lithography”, Nano Lett. [39] Chien Fat Chau and Tracy Melvin, “The fabrication of macroporous polysilicon by nanosphere lithography”, J. Micromech. Microeng. ,18, 064012 (2008) [40] Y.P. Hsu, S.J. Chang,, Y.K. Su, J.K. Sheu, C.H. Kuo, C.S. Chang , S.C. Shei, “ICP etching of sapphire substrate”, Optical Materials, 27, 1171–1174 (2005) [41] 張俊彥、鄭晃中, “積體電路製程及設備技術手冊”, 台灣電子材料與元件協會出版, (2003) | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/40938 | - |
| dc.description.abstract | 隨著奈米科技逐漸發展中，傳統實驗室使用之光微影術(photolithography)所能製作之結構的尺寸已逐漸不敷使用，然而一種嶄新的技術稱為奈米微影術(nanolithography)已被開發，在光電工程中，許多結構都利用此方法製作，例如:奈米柱狀(nano-pillar)結構、奈米光罩(nanomasks)等等，然而在奈米微影術當中，奈米球微影術是最廣為使用的一種技術，此技術不僅僅可以製作出二維、三維的光子晶體(photonic crystal)，也可利用此技術製作出週期性的金屬圖案光柵，藉由偶合發光層發出之光線及表面電漿波(localized surface plasmon resonance)增強主動元件其發光效率。
在目前氮化物發光二極體(nitride light-emitting diode)中，主要使用做為基板的材料為藍寶石(sapphire)基板。而在本研究中，我們利用奈米球微影術之技術，將週期性奈米尺寸之圖案轉移至藍寶石基板上，並利用濕式蝕刻之技術對我們的藍寶石基板進行蝕刻。經由研究發現，製作圖案化之藍寶石基板(patterned sapphire substrate)可增進氮化物發光二極體之發光效率，而目前有兩種主要之論點可作為發光效率增進之解釋: (1)利用側向磊晶生長於圖案化藍寶石基板(lateral epitaxial patterned sapphire)可使氮化物發光層在後續的磊晶過程中得到較少的線缺陷，因而增進自發性輻射之比例，增進發光二極體之內部量子效應(internal quantum efficiency)。(2)由於圖案化藍寶石基板之形狀異於未做圖案化之藍寶石基板，因此當光線由發光層入射於其與空氣之介面時，其入射角度較小，發生全反射之機率也減小，因此增進發光二極體之光萃取效率(light extraction efficiency)。 | zh_TW |
| dc.description.abstract | As electronic devices become smaller, the traditional photolithography technology is not available to fabricate nanometer-scale structure. Nevertheless, a new technology called nanolithography is growing up nowadays. Nanostructures fabricated by nanomasks, such as naorods, nanowires, etc. are applied in optoelectronics widely. The nanosphere lithography (NSL) is one of the techniques in nanolithography which can fabricate two-dimensional and three-dimensional photonic crystal in order to manipulate the light propagating in the way we desire or fabricating periodic metal arrays which induce localized surface plasmon resonance (LSPR). It can also be used in bio-sensor and to enhance Raman spectroscopy.
For our purpose, we utilize the nanospheres as the nanomasks to fabricate patterned sapphire substrate (PSS), which can be further grown by gallium nitride (GaN) laterally as a lateral epitaxial patterned sapphire (LEPS). Less threading dislocation density of nitride-based light-emitting diode (LED) is found using lateral epitaxy technique, dislocation density in active region decides the carrier lifetime, mobility and the most important characteristic in LED --- the radiative recombination rate. As the dislocation density decreases, the radiative recombination rates increases which leads to higher internal quantum efficiency. Nevertheless, the enhanced light output of LED is not only due to the increment of internal quantum efficiency but also the light extraction efficiency, lights scattered at the interface between PSS and nitride epilayers may escape into air instead of absorbed by underneath metal contact. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-14T17:07:43Z (GMT). No. of bitstreams: 1 ntu-97-R95941048-1.pdf: 3798881 bytes, checksum: 69389ebf8583c0e5f5eb5283acebe2eb (MD5) Previous issue date: 2008 | en |
| dc.description.tableofcontents | 致謝 I
摘要 II Abstract III Table of Contents IV List of illustrations VII List of Tables XII Chapter 1 Introduction 1 1.1 Light-emitting diode 1 1.1.1 Introduction to light-emitting diodes 1 1.1.2 Sapphire substrate for III-V nitride light-emitting diodes 2 1.2 Motivation 6 Chapter 2 Nanosphere lithography: Fabrication of large area nano-particle arrays via various techniques 7 2.1 Fundamental theories of nanoparticle 7 2.2 Fabrication techniques of nano-structure 12 2.3 Principle of nanosphere self-assembly lithography 17 2.3.1 Mechanism of forming nanosphere self-assembly arrays 17 2.3.2 Nanosphere lithography 19 2.4 Review of techniques fabricating self-assembly nanosphere array 21 Chapter 3. Utilizing convective self-assembly method to fabricate periodic nanosphere arrays 22 3.1 Experimental setup and preparations 22 3.1.0 Experimental setup 22 3.1.1 Preparation of substrate 24 3.1.2 Preparation of nanosphere solution 28 3.2.2 Velocity-varied experiments 37 3.2.3 Substrate-varied experiments 38 3.2.4 Diameter-varied experiments of nanosphere 40 Chapter 4. Application on fabricating patterned sapphire substrate 52 4.1 Introduction to sapphire etching and patterned sapphire substrate 52 4.2 Size reduction of polystyrene nanosphere 55 4.2.0 Motivation 55 4.2.1 RIE gas flow-varied and pressure-varied experiments 56 4.2.2 RIE etching on varied diameter of PS nanospheres 59 4.3 Patterned sapphire substrate by chemical etching 65 4.3.1 Chemical etching of sapphire substrate under varied conditions 67 Part A. Varied conditions of RIE 67 Part B. Varied thickness of SiO2 73 4.3.2 Definition of the ratio of periodical area 74 4.4 Conclusions 78 Chapter 5. Conclusions 79 5.1 Conclusions 79 5.2 Future work 80 References 81 | |
| dc.language.iso | en | |
| dc.subject | 奈米球微影術 | zh_TW |
| dc.subject | 圖案化藍寶石基板 | zh_TW |
| dc.subject | 濕式蝕刻 | zh_TW |
| dc.subject | Nanosphere lithography | en |
| dc.subject | Patterned sapphire substrate | en |
| dc.subject | Wet etching | en |
| dc.title | 利用對流性自組形成之奈米球微影術
製作週期性圖案化藍寶石基板 | zh_TW |
| dc.title | Utilizing nanosphere lithography by convective self-assembly method for fabrication of periodic patterned sapphire substrate | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 96-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 黃建璋(Jian-Jang Huang),吳育任(Yuh-Renn Wu) | |
| dc.subject.keyword | 奈米球微影術,圖案化藍寶石基板,濕式蝕刻, | zh_TW |
| dc.subject.keyword | Nanosphere lithography,Patterned sapphire substrate,Wet etching, | en |
| dc.relation.page | 85 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2008-07-29 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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