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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 張家歐(Chia-Ou Chang),謝發華(Fa-Hwa Shieh) | |
dc.contributor.author | Chia-Ching Wu | en |
dc.contributor.author | 吳嘉靖 | zh_TW |
dc.date.accessioned | 2021-06-14T16:44:58Z | - |
dc.date.available | 2010-08-08 | |
dc.date.copyright | 2008-08-08 | |
dc.date.issued | 2008 | |
dc.date.submitted | 2008-07-30 | |
dc.identifier.citation | [1] 楊龍杰, 認識微機電, 滄海出版社, 民國90年.
[2] B.Mihang, W.Weiyuan, “Future of microelectromechanical systems(MEMS),” Sensors and Actuators, A56, pp.135-141, 1996. [3] M.A. LEMKIN et al, “A 3-axis force balanced accelerometer using a single proof-mass,” Solid State Sensors and Actuators, Vol. 2, pp.1185-1188, 1997. [4]Analog Device ADXL210 accelerometer datasheet. http://www.analog.com/pdf/ADXL202_10_b.pdf. [5]Navid Yazdi,Farrokh ayazi, and Khalil Najafi, “ Micromachined Inertial sensor,”Proc.of the IEEE.Aug.1998,pp1640-1659 [6] B. E. Boser and R. T. Howe,“Surface Micromachined Accelerometer, ”IEEE Journal of Solid-State Circuits, Vol. 31, pp. 366-375, 1996. [7] M. Kraft, C. Lewis, T. Hesketh and S. Szymkowiak, “A novel micromachined accelerometer capacitive interface,” Sensors and Actuators A68 ,pp. 466-473, 1998. [8] F.N. Alavi, M. Kraft and D.O. King, “ Sensitivity analysis of a high performance accelerometer,” Proc. Conf. on Micromechanics Europe,pp. 305-308, 2001. [9] Analog Devices, “ ADXL-Monolithic Accelerometer with signal conditioning,’’ Datasheet, One Technology Way, Norwood, MA02062,1993. [10] B. E. Boser and R. T. Howe, “Surface Micromachined Accelerometer,” IEEE Journal of Solid-State Circuits, Vol. 31, No. 3, 1996. [11] Bernhard E. Boser, ”Capacitive Position Sense Circuit”, Berkeley Sensor & Actuator Center, Dept. of Electrical Engineering and Computer Sciences University of California, 1996. [12] Bernhard E. Boser, ”Electronics for Micromachined Inertial Sensor”, Berkeley Sensor & Actuator Center, Dept. of Electrical Engineering and Computer Sciences University of California, 1997. [13] Zsolt Kádár, “ Integrated Resonant Magnetic Field Sensor,” Delft Univ., Ph.D. Dissertation, 1997. [14] Naiyavudhi Wongkomet, ”Position sensing for Electrostatic Micropositioners, Dept. of Electrical Engineering and Computer Sciences University of California,1998. [15]鍾啟晨, “The design of micro-capacitive sensing circuit for inertial sensor,” 國立清華大學微機電系統工程研究所,碩士論文,2003. [16]毛志強, “The Design, Simulation and Fabrication of Differential Capacitive Sensing Circuits of Micro Gyroscope,” 國立交通大學電機與控制工程研究所,碩士論文,2004. [17] 陳世昌 , “位移電容感測器之研究設計”, 國立台灣大學應用力學研究所, 碩士論文, 2006. [18] Farrokh Ayazi, Khalil Najafi, “ A HARPSS Polysilicon Vibrating Ring Gyroscope”, IEEE Journal of MEMS, Vol. 10, No. 2, Jun 2001. [19] 張家歐, 周傳心, 張簡文添, “微型陀螺儀研製(二),” 中山科學研究院委託合作研究計畫期末報告,2004. [20] CIC訓練課程 , “Full-Custom Layout Editor with Laker” , 國研院國家片系統設計中心. [21] CIC訓練課程 , “Circuit Simulation and Analysis with HSPICE” , 國研院國家片系統設計中心. [22]蕭培墉, 吳孟賢, “HSpice積體電路設計分析與模擬導論”,東華書局 [23] Johns Martin, “Analog Integrated Circuit Design”, Wiley. [24] Behazd Razavi,“Design of Analog CMOS Integrated Circuits”, McGraw-Hill. [25] Sergio Franco, “Design with Operational Amplifiers and Analog Integrated Circuits-Third Edition”, Mc Graw Hill, 2002. [26] 黃韋皓 , “電容感測電路之設計模擬與佈線”, 國立台灣大學應用力學研究所, 碩士論文, 2007. [27] Sedra, Smith, “Microelectronic CIRRUITS”, OXFORD. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/40329 | - |
dc.description.abstract | 本論文的目的在於實現CMOS位移電容感測器之佈局,並比較佈局前後效能之差異。文中利用雙級運算放大器做為主體,接著佈局離散元件,並在佈局後些微修改以達到需求,最後探討全系統架構模擬之電容改變量與輸出電壓間的關係,本系統模擬後解析度可達 法拉等級。
而本論文使用國家晶片系統設計中心(NSC Chip Implementation Center, CIC)所提供的台灣積體電路(TSMC)0.35μm Mixed-Signal 2P4M Polycide 3.3/5V的製程,並使用Synopsys 公司所出的Hspice電路模擬軟體與思源公司的laker軟體進行模擬及佈線。 | zh_TW |
dc.description.abstract | The purpose of this dissertation is to realize the design and layout of CMOS capacitive sensing circuit, and in this case to compare the differences before and after layout. In this dissertation use the two-stage amplifier to be the principal. Furthermore, layout the dispersed elements, and modify that after layout to satisfy our requirement.
This dissertation is applying 0.35μm Mixed-Signal 2P4M Polycide 3.3/5V manufacture process of TSCM which is provided by NSC Chip Implementation Center. Finally, using Hspice software designed by Synopsys co. to simulate and laker software designed by Springsoft co. to layout. | en |
dc.description.provenance | Made available in DSpace on 2021-06-14T16:44:58Z (GMT). No. of bitstreams: 1 ntu-97-R95543008-1.pdf: 12613842 bytes, checksum: e24cd4026b614400fbc7ed360f0cb7dc (MD5) Previous issue date: 2008 | en |
dc.description.tableofcontents | 摘要 I
Abstract II 目錄 III 圖目錄 V 表目錄 IX 第一章 導論 1 1.1 研究背景 1 1.2 研究動機與目的 2 1.3 文獻回顧 3 1.4 本文目的與章節摘要 8 第二章 環形陀螺儀之振動原理與分析 10 2.1 環形陀螺儀之原理簡介 10 2.2 環狀陀螺儀感測原理 12 2.3 環形陀螺儀架構與電容值計算 12 2.4 本論文架構電容值的估算 14 第三章 系統架構與運算放大器佈局與模擬 16 3.1 本論文電路之系統架構 16 3.2 雙級運算放大器架構 17 3.3 雙級運算放大器之佈局 19 3.4 雙級運算放大器之特性模擬 21 第四章 離散元件之佈局與模擬 28 4.1 前言 28 4.2 取樣與保存(Sample and Hold) 28 4.3 無穩態多諧振盪器 29 4.4 緩衝器(Buffer) 34 4.5 S/H之時脈設計(Clock Design) 36 4.6 本章綜合結果 40 第五章 模擬結果 41 5.1 前言 41 5.2 單一運算放大器模擬結果 42 5.3 差動放大器模擬結果與改良 45 5.4 全電路系統模擬 49 5.5 感測電容訊號與輸出弦波訊號之關係 57 5.6 佈局後系統效能降低原因之探討 61 第六章 結論與未來展望 63 參考文獻 64 附錄A CMOS佈局設計之簡介 67 附錄B 雙級運算放大器之細部設計 71 附錄C 連線電容 83 附錄D 電阻之佈局設計 89 附錄E 折疊疊接放大器之設計 92 | |
dc.language.iso | zh-TW | |
dc.title | CMOS位移電容感測器之電路設計 | zh_TW |
dc.title | CMOS Circuit Design of Displacement Capacitive Sensors | en |
dc.type | Thesis | |
dc.date.schoolyear | 96-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 張簡文添(Wen-Tian Chang Chien),陳柏志 | |
dc.subject.keyword | 電容感測器,類比積體電路,雙級運算放大器,IC設計,佈局, | zh_TW |
dc.subject.keyword | capacitive sensor,analog integrated circuit,two-stage operational amplifier,IC design,layout, | en |
dc.relation.page | 94 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2008-08-01 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 應用力學研究所 | zh_TW |
顯示於系所單位: | 應用力學研究所 |
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