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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/40247完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 彭隆瀚 | |
| dc.contributor.author | Chia-Ling Chou | en |
| dc.contributor.author | 周佳伶 | zh_TW |
| dc.date.accessioned | 2021-06-14T16:43:19Z | - |
| dc.date.available | 2013-08-04 | |
| dc.date.copyright | 2008-08-04 | |
| dc.date.issued | 2008 | |
| dc.date.submitted | 2008-08-01 | |
| dc.identifier.citation | [1] E. F. Schubert, Light-Emitting Diodes. Cambridge University Press, 2006.
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Salamanca-Riba, “Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN,' Journal of Applied Physics, vol. 89, no. 11, pp. 6214-6217, 2001. [20] Z. F. Fan, S. N. Mohammad, W. Kim, O. Aktas, A. E. Botchkarev, and H. Morkoc, “Very low resistance multilayer ohmic contact to n-GaN,' Applied Physics Letters, vol. 68, no. 12, pp. 1672-1674, 1996. [21] E. F. Chor, D. Zhang, H. Gong, G. L. Chen, and T. Y. F. Liew, “Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaN,' Journal of Applied Physics, vol. 90, no. 3, pp. 1242-1249, 2001. [22] V. Kumar, L. Zhou, D. Selvanathan, and I. Adesida, “Thermally-stable low- resistance Ti/Al/Mo/Au multilayer ohmic contacts on n-GaN,' Journal of Applied Physics, vol. 92, no. 3, pp. 1712-1714, 2002. [23] J. K. Ho, C. S. Jong, C. C. Chiu, C. N. Huang, C. Y. Chen, and K. K. Shih, “Low-resistance ohmic contacts to p-type GaN,' Applied Physics Letters, vol. 74, no. 9, pp. 1275-1277, 1999. [24] Y. Koide, T. Maeda, T. Kawakami, S. Fujita, T. Uemura, N. Shibata, and M. Murakami, “Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN,' Journal of Electronic Materials, vol. 28, no. 3, pp. 341-346, 1999. [25] W. Shockley, Electrons and Holes in Semiconductors. D. Van Nostrand Company, New York, 1950. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/40247 | - |
| dc.description.abstract | 本研究論文在探討氮化銦鎵�氮化鎵發光二極體之製作與特性量測，第一部分重點在於光致電化學氧化法成長之氧化鎵薄膜對於發光二極體之表面鈍化效果與表面出光增益之影響。
在光激螢光強度的量測中，我們觀察到氧化鎵薄膜具有表面鈍化效應與抗反射膜作用，使得光激螢光頻譜上具有光學增益的效果；在氮化鎵頻譜範圍中心波長365nm部分的訊號強度約有60％的增強，而在量子井主動層頻譜範圍中心波長450nm約有80％訊號強度的提升。 在電壓－電流特性量測中，具有氧化鎵薄膜保護層之氮化銦鎵�氮化鎵發光二極體元件並未有特性劣化之現象。由電激螢光強度量測的結果顯示，與未成長氧化膜之元件相較，在中心波長處約有40％的增強，且在10伏特的逆向偏壓下，漏電流約有30％之改善。且在電激發光輻射場型的量測中，可觀察到成長氧化膜之元件在各方向上的出光強度有所增加，尤其在側向角度上有較高的增強比例。 第二部分，我們利用平坦化製程，並結合前述氧化層鈍化技術，成功完成具微米三角柱結構發光二極體製程技術之開發。在電性量測中，具氧化鈍化層之微米三角柱發光二極體元件漏電流，相較於未氧化之元件降低約兩個數量級。而在電激發光輻射場型的量測中，可觀察到微米三角柱結構發光二極體在側向角度之出光上，與一般平面型發光二極體相比，具有較高比例的出光強度。 | zh_TW |
| dc.description.abstract | The fabrication and characterization of InGaN/GaN light-emitting diode are investigated in this thesis. First, we discuss the characteristics of native gallium oxide layer grown by photoelectrochemical (PEC) oxidation. The photoluminescence (PL) enhancement of PEC passivated GaN and quantum well active layer are ~60％ and ~80％, respectively. These significant increases of PL intensity can be ascribed to the passivation of dangling bonds and the anti-reflection effect of native gallium oxide layer.
Then, the testing light-emitting diode (LED) with conventional planar structure was examined by Agilent 4155C semiconductor analyzer. The characteristic I-V curve of PEC passivated LED reveals a typical forward voltage 4.3V at 20mA with 40％ increase in electroluminescence intensity and 30％ reduction in leakage current at reverse bias 10V. Moreover, the radiation pattern shows that light intensity of PEC passivated LED is higher than that of non-passivated LED in all direction, especially in oblique angle. Finally, we successfully combine the planarization and PEC passivation technique to fabricate micron-scale triangular structure light-emitting diode. Leakage current of this device with oxide passivation layer is reduced about 2 orders compared to triangular structure device without oxide layer. Moreover, the radiation pattern shows that the percentage of light intensity in oblique angle of micron-scale triangular LED is higher than that of typical planar LED. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-14T16:43:19Z (GMT). No. of bitstreams: 1 ntu-97-R95941002-1.pdf: 7487420 bytes, checksum: 1fc6225d2f9ce55df93f5ed26bbbe351 (MD5) Previous issue date: 2008 | en |
| dc.description.tableofcontents | 誌謝.................................................i
中文摘要...........................................iii 英文摘要.............................................v 目錄...............................................vii 表目錄..............................................ix 圖目錄...............................................x 第1章 緒論...........................................1 1.1 簡介.............................................1 1.2 論文內容概述.....................................6 第2章 氧化膜鈍化層...................................7 2.1 光致電化學氧化/蝕刻法之原理與架設................9 2.2 氧化膜鈍化層之影響..............................13 第3章 發光二極體製作與特性研究......................17 3.1 相關製程技術討論-歐姆接觸.......................17 3.2 氮化銦鎵/氮化鎵發光二極體之研製.................22 3.3 元件光學與電學特性分析..........................28 3.3.1 元件光電特性分析..............................29 3.3.2 氧化膜鈍化層之光學增益........................33 3.3.3 元件之輻射場型分析............................34 第4章 微米三角柱發光二極體之研製....................35 4.1 相關製程技術討論-平坦化技術.....................35 4.2 微米三角柱發光二極體之研製......................41 4.3 元件光學與電學特性分析..........................49 4.3.1 元件光電特性分析..............................50 4.3.2 元件之輻射場形分析............................53 第5章 結論與未來展望................................55 5.1 結論............................................55 5.2 未來展望........................................56 參考文獻............................................58 | |
| dc.language.iso | zh-TW | |
| dc.subject | 發光二極體 | zh_TW |
| dc.subject | 共振腔 | zh_TW |
| dc.subject | 光致電化學反應 | zh_TW |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | cavity | en |
| dc.subject | photoelectrochemistry | en |
| dc.subject | light-emitting diode | en |
| dc.subject | GaN | en |
| dc.title | 具微米三角柱結構氮化鎵發光二極體之研製 | zh_TW |
| dc.title | Fabrication and Characterization of Gallium Nitride Micron-scale Triangular Structure Light-emitting Diode | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 96-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 李文欽,朱振甫,黃建璋,賴志明 | |
| dc.subject.keyword | 氮化鎵,發光二極體,光致電化學反應,共振腔, | zh_TW |
| dc.subject.keyword | GaN,light-emitting diode,photoelectrochemistry,cavity, | en |
| dc.relation.page | 61 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2008-08-01 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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