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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 胡振國 | |
dc.contributor.author | Hsiang-Yao Chiang | en |
dc.contributor.author | 姜翔耀 | zh_TW |
dc.date.accessioned | 2021-06-13T16:56:25Z | - |
dc.date.available | 2011-07-25 | |
dc.date.copyright | 2011-07-25 | |
dc.date.issued | 2011 | |
dc.date.submitted | 2011-07-14 | |
dc.identifier.citation | References
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/38995 | - |
dc.description.abstract | 本篇論文主要探討透過直交流陽極氧化補償技術,改良高介電係數材料之電特性及其可靠度。在文章中,我們將主要探討兩種高介電材料,分別是氧化鋁以及氧化鉿。首先是氧化鋁材料:在p型矽基板上利用陽極氧化法生成二氧化矽做為緩衝層,之後再利用蒸鍍法在室溫下鍍上氧化鋁,並利用直交流陽極氧化補償技術改善其介電層品質。比較有經過補償以及沒有經過補償兩種元件,我們得知有經補償的元件其等效氧化層厚度較薄,也就是說其等效介電常數較高。針對漏流特性分析,我們得知經補償的元件其漏流約比未經補償的元件小一個數量級,並藉著利用在不同面積的光罩下做黃光製程,我們得知漏流與光罩面積成正比,意味著漏流的路徑是經過元件內部而非元件邊緣,代表介電層品質良好並且均勻。此外藉由施加定電壓、定電流應力以及量測其崩潰電壓來進行可靠度分析,以上三種量測方式都顯示出有經補償的元件其可靠度高於未經補償的元件,其穩定性也較佳。其次為氧化鉿材料,製程步驟與氧化鋁材料相似,其實驗結果也與氧化鋁材料相符,不論是在介電常數、漏流大小以及可靠度上,經補償的元件所展現之特性皆比未經補償的元件來得好,除此之外,還針對施加定電流前後之電容-電壓以及電流-電壓兩特性之改變量做比較,得知經補償的元件其改變量皆小於未經補償的元件,也就是說其穩定度較高。 | zh_TW |
dc.description.abstract | In this work, the improvements of electrical characteristics and reliability with the compensation of direct-current superimposed with alternating-current anodization (DAC-ANO) for the high-k dielectrics are investigated. And two high-k dielectrics are discussed in this work, which are Al2O3 and HfO2. First, Al2O3 is discussed. SiO2 layer was prepared by ANO as the buffer layer, and then Al2O3 was deposited by sputtering under room temperature. After this, the quality of the dielectric layer was compensated by DAC-ANO technique. Compare the samples with and without DAC-ANO compensation, it is easy to find out the sample with DAC-ANO compensation exhibits smaller EOT, i.e., the higher dielectric constant. The leakage current density of sample with DAC-ANO compensation is one order of magnitude smaller than the sample without. Patterned by various areas, it concludes that the leakage current is proportional to the device area, which indicates that the leakage current is uniformly distributed through the whole device instead of edges, and the quality is good. Besides, the reliability tests via TDDB under CVS, CCS, and TZDB are examined. All show that the sample with DAC-ANO compensation is more reliable and stable than the sample without. Secondly, HfO2 is discussed. The fabrication process of HfO2 is like that of Al2O3, so as the result. What’s more, the variations of C-V and J-V curves before and after CCS stress are examined. It shows that the variations of samples with DAC-ANO compensation are much smaller than those of samples without, indicating that the former samples are more stable. | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T16:56:25Z (GMT). No. of bitstreams: 1 ntu-100-R97943061-1.pdf: 1781657 bytes, checksum: 5aa5297163d6a63a55890476fc736cbe (MD5) Previous issue date: 2011 | en |
dc.description.tableofcontents | Abstract (Chinese) I
Abstract (English) II Content III Figure Captions V Table Captions VIII Chapter 1 Introduction 1 1-1 Motivation of this work 1 1-2 High-k Dielectrics 3 1-3 Growth Mechanism of Constant Voltage Anodization of Silicon 5 1-4 Determination of Dielectric Thickness 7 Chapter 2 Characterization of High-k Al2O3 Dielectrics with and without DAC-ANO Compensations 13 2-1 Introduction 14 2-2 Experimental 15 2-3 Results and Discussion 17 2-3-1 Capacitance-Voltage Characteristics 17 2-3-2 Current-Voltage Characteristics 18 2-3-3 Interfacial Property between Dielectric and Silicon 18 2-3-4 Analysis of Devices with Various Areas 20 2-3-5 Reliability of Al2O3 Dielectric 21 2-3-5-1 Time-Dependent Dielectric Breakdown Using Constant Voltage Stress 21 2-3-5-2 Time-Dependent Dielectric Breakdown Using Constant Current Stress 22 2-3-5-3 Time-Zero Dielectric Breakdown 23 2-4 Summary 23 Chapter 3 Characterization of High-k HfO2 Dielectrics with and without DAC-ANO Compensations 44 3-1 Introduction 45 3-2 Experimental 45 3-3 Results and Discussion 47 3-3-1 Capacitance-Voltage Characteristics 47 3-3-2 Current-Voltage Characteristics 48 3-3-3 Interfacial Property between Dielectric and Silicon 49 3-3-4 Reliability of HfO2 Dielectric 50 3-3-4-1 Time-Dependent Dielectric Breakdown Using Constant Voltage Stress 50 3-3-4-2 Time-Dependent Dielectric Breakdown Using Constant Current Stress 50 3-3-4-3 Time-Zero Dielectric Breakdown 51 3-4 Summary 52 Chapter 4 Conclusions 72 4-1 Conclusions 72 4-2 Suggestions for future work 74 References 76 | |
dc.language.iso | zh-TW | |
dc.title | 以直交流陽極氧化補償技術改善金氧半結構之氧化鋁及氧化鉿介電層品質 | zh_TW |
dc.title | Quality Improvement in Al2O3 and HfO2 Dielectrics in MOS Structures by Direct-Current Superimposed With Alternating-Current Anodization (DAC-ANO) Compensation Technique | en |
dc.type | Thesis | |
dc.date.schoolyear | 99-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 鄭晃忠,洪志旺,王維新 | |
dc.subject.keyword | 高介電係數材料,氧化鋁,氧化鉿,直交流陽極氧化, | zh_TW |
dc.subject.keyword | quality improvement in,Al2O3,HfO2,Dielectrics,DAC, | en |
dc.relation.page | 80 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2011-07-14 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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