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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/38726完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 楊志忠(Chih-Chung Yang),謝雲生(Wan-Sun Tse) | |
| dc.contributor.author | Tsun-Yao Hsia | en |
| dc.contributor.author | 夏尊堯 | zh_TW |
| dc.date.accessioned | 2021-06-13T16:43:38Z | - |
| dc.date.available | 2005-07-08 | |
| dc.date.copyright | 2005-07-08 | |
| dc.date.issued | 2005 | |
| dc.date.submitted | 2005-06-30 | |
| dc.identifier.citation | Ch 1.
1. Jiang M H. Synthetic Crystals toward New Era. J. of Synthetic Crystals,2001,30(1):1-9. 2. Wang Z G. Semiconductor Quantum Dot Lasers. Physics, 2000, 29(11):643. 3. 陳網編著.”晶體物理學基礎”. 北京. 科學出版社, 1992, 157. 4. Zhang K C. Development of Laser and Nonlinear Optical Crystal Material Science. J. of Synthetic Crystals,1997,26(3-4):248. 5. Shen H Y. Research Tendency of Laser Crystals. J. of Synthetic Crystals,1995,24(1):72. 6. Wang G F. New Development of Laser Crystals Materials. J. of Synthetic Crystals,1998,27(4):390. 7. Cao Y H, Yang L, Liu F J. A Review of Al2O3: Ti3+ Growth and its Characteristics. J. of Synthetic Crystals,1992,21(1):95. 8. William F. Krupke, IEEE Journal on Selected Topics in Quantum Electronics, Vol.6, No.6, (2000) 1287. 9. Laura D. William F. Krupke, et al., IEEE Journal of Quantum Electronics, Vol.29, No.4, (1993) 1179. 10. Hongwei Qiu, Peizhen Deng, Wei Chen, et al., Materials Letters 55 (2002) 1-7. 11. A.R. Reinberg, W.C. Holton, et al., Applied Physics Letters, Vol.19, No.1, (1971)11. 12. 陳遠帆, ” (YXYb1-X) 3Al5O12晶體的生長與物理性質研究 ”, 國立中山大學物理研究所博士論文 , 2003. 13. N.A. Toropov, I. A. Bondar’, F. Ya. Galakhov, et al., Izv. Akad. Nauk SSSR, Ser. Khim. 7, 1158 (1964). 14. L.V. Soboleva, A.P. Chirkin, Crystallography Reports, Vol. 48, No. 5, 2003, pp.883-887. 15. 彭志豪, ” Y3Al5-xFeXO12晶體生長及物理性質研究 ”, 輔仁大學物理學系研究所碩士論文 , 2004. 16. 陸學善, “激光基質釔鋁石榴石的發展”, 科學出版社, 1972. 17. G. Menzer, Z. Krist, 69, 300 (1928). 18. “激光晶體”, 新華書局, 1976. 19. Bertaut, E.F., Forrat, F., (1956) Compt.Rend. 242,382. 20. Geller, S., Gilleo, M.A., (1957) F. Phys. Chem. Sol. 3,30. 21. Gendelev, S.S., Titova, A.G. (1968) Growth of Crystals 6 A , 90. 22. D. ELWELL and H. J. SCHEEL, “ Crystal Growth from High-Temperature Solutions “, 1975, Academic Press. 23. Geusic, J.E., Marcos, H.M., Van Uitert, L.G., Laser oscillations in Nd-doped yttrium aluminium gallium and gadolinium garnets, Appl. Phys. Lett. 4, 182 (1964). 24. Kiss, Z.J., Duncan, R.C., Crossed-pumped Cr3+ +Nd3+：YAG laser system, Appl. Phys. Lett. 5, 200 (1964). 25. Brian R Pamplin, “Crystal Growth “, 1980, Pergamon Press. 26. Verneuil, A. (1902), Compt. Rendue 135, 791. 27. Verneuil, A. (1904), Am. Chim. Phys. 8, ser. 3, 20. 28. Merker, L. (1947), Fiat Tept. No. 1001. 29. Wanklyn, B. M., “Two new flux system”, Part 1, J. Cryst. Growth, 7, 368,(1970). 30. Timofeeva, Kvapil, “Solubility and crystallization of YAG from solution in PbO-B2O3 and PbO-B2O3-PbF2 melts”, Kristallografiya, 11, 289（1966）. 31. Puttbach, Monchamp, Nielsen, “Hydrothermal growth of Y3Al5O12, J. Phys. Chem.Solids, Suppl. 1, 569, (1967). 32. Mill, B.V., “Hydrothermal synthesis of Al & Ga garnets”, Kristallografiya 12, 158, (1967). 33. Pfann, W. G., (1952), Trans. AIME 194, 747. 34. W. Class, J. of Crystal Growth, 3-4, 241, (1968). 35. Donald T. J. Hurle, “Crystal Pulling from the Melt”, Springer-Verlag, (1993). 36. Emanuel Kaldis, “Crystal Growth of Electronic Materials”, North-Holland, (1985). 37. Jan Czochralski, “ Ein Neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle “, Z. physik. Chemie., 92 (1918) . 38. GK Teal, JB Little, Phys. Rev. 78 (1950) 647. 39. GK Teal, IEEE Trans, Electron Devices ED-23 (1976) 621. 40. HE Buckley, “Crystal Growyh “, Wiley, New York, (1951). 41. D. T. J. Hurle, “Handbook of Crystal Growth 2, Bulk Crystal Growth, Part A.”, North-Holland, (1994). 42. A. W. Vere, “Crystal Growth Principles and Progress”, Plenum Press, (1987). 43. 閔乃本, “晶體生長的物理基礎”, 上海科學技術出版社, 1982. 44. 福田承生,干川圭吾, “單結晶成長技術”, 培風館, 1999. 45. Linares, R. C., “Growth of Garnet Laser Crystals”, Solid State Communications, 2, 229, (1964). Thesis @ NTU－GIEE _P92943010 （Hsia Tsun-Yao） Ch 2. 46. 張克从等, “晶體生長科學與技術”, 科學技術出版社, 1997. 47. J. C. Brice, Rep. Prog. Phys., 40, 567 (1977). 48. J. C. Brice, “The Growth of crystal from Liquid. ”, 143 (1973). 49. V. S. Troitsky , Phil. Mag., A264, 146 (1969). 50. T. Arizumi, et al., Jap. J. Appl. Phys., 8, 1091 (1969). 51. T. Arizumi, Jap. J. Appl. Phys., 9, 361 (1970). 52. T. Arizumi, Jap. J. Appl. Phys., 9, 1255 (1970). 53. W. E. Langlois, J. Crystal Growth, 42, 386, (1977). 54. W. E. Langlois, et al., ”Computer Methods in Applied Mechanics and Engineering', 12, 143, (1977). 55. J. R. Carruthers, K. Nassau, J. Appl. Phys., 39, 5205 (1968). 56. C. D. Brandle, J. Crystal Growth, 42, 400 (1977). 57. W. A. Tiller, et al., Acta. Met., 1, 428 (1953). 58. J. W. Rutter, B. Chalmers, Cand. J. Phys., 31, 15 (1953). 59. D. T. Hurle, J. Solid State Electronics, 3, 37 (1961). 60. S. R. Cotiell, et al., J. Crystal Growth, 34, 157 (1976). 61. T. Sato, G. Ohira, J. Crystal Growth, 40, 78 (1977). 62. J. D. Weeks, et al., J. Crystal Growth, 112, 244 (1991). 63. D. R. Jenkins, J. Crystal Growth, 102, 481 (1990). Ch 3. 64. 李國華等, “晶體生長界面相研究”, 人工晶體學報, 第30卷第2期 (2001). 65. Dash, W. C., in Growth and Perfection of Crystals, Wiley, New York (1958). 66. Dash, W. C., J. Appl. Phys., 30, 459, (1959). 67. Dash, W. C., J. Appl. Phys., 31, 736 and 2275, (1960). 68. D. Ehrentraut, Journal of Crystal Growth, 242, 375-382, (2002). 69. Brian R Pamplin, “Crystal Growth “, 1975, Pergamon Press. 70. Nobuyuki Kobayashi, Journal of Crystal Growth, 147, 382-389, (1995). 71. Derby, et al., Journal of Crystal Growth, 97, 792-826, (1989). 72. Derby, et al., Journal of Crystal Growth, 139, 147-157, (1994). 73. Derby, et al., Journal of Crystal Growth, 121, 473-494, (1992). 74. 周志強等, 人工晶體學報, 第30卷第4期 (2001). 75. 呂文中等, “電子材料物理”, 電子工業出版社, 2002. Ch 4. 76. 李匡邦等, “ 光譜化學分析 ”, 國立編譯館, 1997. 77. Gunter Huber, et al., “Compact diode pumped cw solid-state lasers in the visible spectral region”, Optical Materials 11(1999), 205-216. 78. Valerii V, et al., “Q-switched, TEM 00-mode, diode-pumped Yb3+: YAG laser with extended tunability”, Optics Communications 197(2001) 403-411. 79. B. E. A. Saleh, M. C. Teich, “Fundamentals of Photonics”, Wiley Series, 1991. 80. Amnon Yariv, “Quantum Electronics”, Wiley, 1989. 81. Amnon Yariv, “Optical Electronics in Modern Communications”, Oxford University Press, Inc. 1997. 82. Blombergen N., “Solid State Infrared Quantum Counters”, Phys. Rev. Lett. ,1959,2：84-85. 83. Auzel F. Competeur Quantique Par Transfert d’energie Entre Deuxions de Terres Rares Dans un Tungstate Mixte et’dans un Verre. C. R. Acad, Science (Paris), 1966,262：1016-1019. 84. Auzel F. Materials and Devices Using Double-pumped Phosphous with Energy Transfer. Proceedings of the IEEE, 1973,62(6)：758-786. 85. Heine F, et al., Green Up-conversion Continuous Wave Er3+：LiYF4 Laser at Room Temperature. Appl. Phys. Lett., 1994, 65：383-384 . 86. Thrash R J, et al., Up-conversion Laser Emission from Yb3+-sensitized Tm3+ in BaY2F8 .J. Opt. Am., 1994, 11(5) ：881-885 . 87. W. F. Krupke, et al., “Upconversion-pumped luminescence efficiency of rare-earth-doped hosts sensitized with trivalent ytterbium”, J. of Opt. Soc. Am. B/Vol.15, No.3/March 1998. 88. A. Martinez-Rios, et al., “Multi-wavelength visible up-converted luminescence in novel heavily doped Ytterbium－Holmium silica fiber under low-power IR diode pumping”, J. of Luminescence, 111 (2005), 1-8. 89. A. Minassian, et al., “Power visible (530－770nm) luminescence in Yb, Ho：GGG with IR diode pumping”, Optics Express, Vol.10, No.16, 2002：832-839. 90. A. Minassian, et al., “Visible-to-near-IR luminescence at stepwise up-conversion in Yb, Ho：GGG under IR diode pumping”, J. of Luminescence, 102-103 (2003) 715-721. 91. S. Kroll, “Upconversion dynamics in Er3+–doped YAG”, J. of Luminescence 111 (2005) 191-198. 92. Eiichiro Nakazawa, et al., “Cooperative Luminescence in YbPO4”, Physical Review Letters, Vol. 25, No. 25, 1970. 93. H. P. Weber, et al., “Diode pumping and laser properties of Yb, Ho：YAG”, Optics Communications 155 (1998) 68-72. 94. G. Huber, et al., “Spectroscopic study of Yb doped oxide crystals for intrinsic optical bistability”, J. of Luminescence 96 (2002) 129-140. 95. William F. Krupke, “Ytterbium Solid-State Lasers－The first Decade”, IEEE Journal on Selected Topics in Quantum Electronics, Vol.6, No.6, (2000) 1287. 96. G. Boulon, et al., “Growth of rare earth (RE) doped concentration gradient crystal fibers and analysis of dynamical processes of laser resonant transitions in RE-doped Y2O3 “, J. of Alloys and Compounds 341 (2002) 214-219. 97. Georges Boulon, et al., “Crystal Growth, Yb3+ spectroscopy, concentration quenching analysis and potentiality of laser emission”, J. Phys.: Condens. Matter 16 (2004) 1501-1521. 98. A. Brinier, “A new evaluation of Yb3+–doped crystals for laser applications”, J. of Luminescence 92 (2001) 199-204. 99. J. Sarnecki, et al., “Cooperative emission in Yb3+：YAG planar epitaxial waveguides”, J. of Luminescence 94-95 (2001) 29-33. 100. G. Ramos-Ortiz, et al., “luminescent properties and energy transfer processes of co-doped Yb-Er poly-crystalline YAG matrix”, Optical Materials (2005). 101. Peizhen Deng, et al., “Growth of high-quality single crystal of 30 at.﹪ Yb：YAG and its laser performance”, J. of Crystal Growth 216 (2000) 348-351. 102. Peizhen Deng, et al., “Concentration quenching in Yb：YAG”, J. of Luminescence 97 (20020 51-54. 103. Peizhen Deng, et al., “Dependence of the Yb3+ emission cross section and lifetime on temperature and concentration in yttrium aluminum garnet”, J. of Opt. Soc. Am. B, Vol. 20, No. 9, 2003. 104. Peizhen Deng, et al., “Growth of high-quality single crystal of 50 at.﹪ Yb：YAG and its spectral properties”, J. of Alloys and Compounds 364 (2004) 311-314. 105. Peizhen Deng, et al., “Structural, thermal, and luminescent properties of Yb-doped Y3Al5O12 crystals”, J. of Opt. Soc. Am. B. Vol. 21, No. 3, (2004). 106. Peizhen Deng, et al., “Crystal growth and spectral properties of Yb3Al5O12 “, J. of Crystal Growth 257 (2003) 272-275. 107. Peizhen Deng, et al., “Upconversion luminescence in Yb3+–doped yttrium aluminum garnets”, Physica B 357 (2005) 365-369. 108. Peizhen Deng, et al., “Optical spectroscopy of Yb3Al5O12 single crystal”, Spectrochimica Acta Part A, (2005). 109. Y. F. Chen, T. Y. Hsia, P. K. Lim and W. S. Tse , ” Green Light Generation in Yb:YAG Crystals Grown by Czochralski Method”, submitting for publication at Applied Physics Letters. 110. Eiichiro Nakazawa, Shigeo Shionoya, “ Cooperative Luminescence ”, Vol. 25, No. 25, Physical Review Letters, (1970). | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/38726 | - |
| dc.description.abstract | 近年來由於 InGaAs 的發展，由半導體雷射激發摻鐿離子雷射材料的發展，在應用於高功率、高效率的固態雷射引起了極大的研究熱潮。其是因Yb3＋離子具有最簡單的能階：2F7/2基態和2F5/2激發態，且僅相距約10,000 cm－1，因此諸如激態吸收等不良的效應在摻鐿離子的固態雷射中是不易見到的。
此外，Yb：YAG 雷射晶體更具有高的熱傳導率，以及優良的物理和化學性質等，而且鐿離子和釔離子在單位晶包中僅相差1.5﹪，因此由柴式提拉法（Cz）可以生長出摻雜高濃度Yb3＋離子的Yb：YAG晶體，誠因如此，Yb：YAG單晶已成為半導體雷射激發固態雷射（DPSSL）中的重要元件。 我們已成功的生長了摻雜Yb3＋離子濃度由 0 到 100 at.﹪的Yb：YAG大尺寸、高品質單晶，並以920 nm以及973 nm 兩種不同波長的InGaAs LD激發，觀察到了炫爛耀眼的綠光，這是所有關於Yb：YAG晶體文獻中所不曾提及的新現象。在光譜的實驗及分析探討後，我們認為InGaAs LD泵浦Yb:YAG所見到的綠光（green light），是由於摻雜Yb3＋離子所引起，且可能是由雙光子躍遷而產生的。 | zh_TW |
| dc.description.abstract | Due to recent development of InGaAs diode laser, Yb3＋ doped solid state materials to be used as gain for high-power and high-efficiency diode-pumped solid-state lasers have attracted a great deal of interest. The Yb3＋ ion has the simplest energy level：only two multiplet manifolds－the 2F7/2 ground state and the 2F5/2 excited state. Among rare-earth ions, only Yb3＋ion has excited state within approximately 10,000 cm－1. Because of this, deleterious effects such as excited absorption and up-conversion are absent in Yb3＋ lasers.
Besides, Yb：YAG crystals have many other attractive characteristics such as high thermal conductivity, excellent physical and chemical properties of the host materials. Moreover, because yttrium and ytterbium garnet are isostructural with only about 1.5﹪difference in unit-cell size, doping concentration of Yb3＋ can be very high in YAG crystal grown by Czochralski（Cz）method. Yb：YAG crystal has become an important component in diode-pumped high-power laser systems. Yb：YAG crystals were successfully grown using the Czochralski technique with Yb concentration,【Yb】, varying from 0 to 100 at.﹪. During the study of the spectral performance on the crystals, a shining green emission light（centered at around 550nm）generated from the crystal was observed after being excited by the 920 or 973 nm InGaAs LD source. This greenish light emission is a new phenomenon which is not been reported before in Yb：YAG crystals. The result was ascribed to the presence of the Yb3＋ dopant and the effect of two-photon transition. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T16:43:38Z (GMT). No. of bitstreams: 1 ntu-94-P92943010-1.pdf: 22798403 bytes, checksum: 1926bb479e49c6e18ea2ca0cf46ca9f1 (MD5) Previous issue date: 2005 | en |
| dc.description.tableofcontents | 第一章 晶體介紹
1-1 前言 ………………………………………………… 1. 1-2 釔鋁石榴石(YAG)晶體結構及性質………………… 6. 1-3 釔鋁石榴石生長方式 ………………………………13. 第二章 晶體生長原理 2-1 熔體生長過程及特點 ………………………………31. 2-2 結晶過程的驅動力 …………………………………35. 2-3 物質傳輸、分凝和溶質分佈 ………………………39. 2-4 熱傳輸、對流和溫度分佈 …………………………47. 2-5 界面穩定性和組分過冷 ……………………………61. 第三章 晶體生長及成品 3-1 晶體生長實驗 ………………………………………69. 3-2 晶體生長實驗結果 …………………………………84. 第四章 光譜量測與討論 4-1 原理及儀器………………………………………… 92. 4-2 結果與討論 ………………………………………100. 第五章 結語 …………………………………………167. 參考文獻 | |
| dc.language.iso | zh-TW | |
| dc.title | (Y1-XYbX)3Al5O12晶體生長及其綠光現象研究 | zh_TW |
| dc.title | Crystal Growth and Green Light Phenomenon of (Y1-XYbX) 3Al5O12 | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 93-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.advisor-orcid | ,謝雲生(tsews@phys.sinica.edu.tw) | |
| dc.contributor.oralexamcommittee | 江海邦(Hai-Pang Chiang) | |
| dc.subject.keyword | 晶體生長,摻鐿釔鋁石榴石,綠光 ., | zh_TW |
| dc.subject.keyword | Crystal Growth,(Y1-XYbX) 3Al5O12,Green Light ., | en |
| dc.relation.page | 167 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2005-06-30 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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