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標題: | 以陽極氧化補償技術改善快速熱氧化層品質 Improvement of Rapid Thermal Oxide Quality by Anodization Compensation Technology |
作者: | Man-Wen Cheng 鄭曼雯 |
指導教授: | 胡振國(Jenn-Gwo Hwu) |
關鍵字: | 陽極氧化,快速熱,氧化層, Rapid Thermal Oxide,Anodization, |
出版年 : | 2005 |
學位: | 碩士 |
摘要: | 摘 要
隨著積體電路 (IC) 和半導體工業的發展,製程技術的進步,半導體元件製程中的每一個步驟都變成相當重要。它們關係著元件的電特性是否穩定且良好,高性能與否。尤其是閘極介電層的品質能決定ULSI電路的電特性和穩定度表現。 在本論文中我們提出以快速熱氧化層生長後再陽極氧化技術來備製閘極氧化層。 首先介紹快速熱氧化層生長後再陽極氧化之實驗系統,量測儀器和超薄閘極氧化層厚度之決定。接著介紹直流陽極氧化的成長機制,與利用 〝直流疊加交流定頻振盪陽極氧化〞 的技術來修補快速熱成長的超薄閘極氧化層的缺陷。我們設計一系列的實驗去觀察不同的快速熱成長時間和溫度與陽極氧化的效應。藉由量測電流和電容曲線去比較它們的電特性。 我們重複以上的實驗條件但加上氧化後退火處理 (POA) ,藉由量測電流和電容曲線去觀察陽極氧化 (ANO)與氧化後退火處理 (POA) 的效應關係。最後是關於這篇論文的結論及建議可再進一步研究的相關題目。 Abstract With the progressive development of integrated circuits (IC) and the semiconductor industry, each step in semiconductor fabrication technology is becoming more and more important. The control of the processing step is related to the performance and reliability of semiconductor devices. Especially, the quality of the gate dielectric layer is extremely important to the reliability and electrical performance of ultra large scale integrated (ULSI) circuit. In this work, the rapid thermal oxidation followed by anodic oxidation (RTO+ANO) was proposed for the preparation of gate dielectric layers and was investigated. To start with, the anodization and rapid thermal systems have been introduced along with the measurement system and the determination of the thickness of ultra-thin gate oxide. And then we introduce the growth models for DC anodization of silicon. The constant-frequency anodization (CF ANO), i. e., a positive DC voltage superimposed with an AC oscillation at a constant frequency, is used to repair the traps of the thermal ultra-thin gate oxide. A series of experiments were designed to observe the effects of anodic oxidation, the thermal oxidation time and growth temperature. Measurements of J-V and C-V curves were made to compare the electrical characteristics of devices studied. We repeat the same studies with additional post oxidation anneal (POA) treatment. From the C-V and J-V curves, The effects of anodic oxidation and POA treatment can be observed. Finally, conclusions and some other suggestions about this thesis were given. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/38326 |
全文授權: | 有償授權 |
顯示於系所單位: | 電子工程學研究所 |
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