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標題: | 伸張應力對快速熱成長超薄閘極氧化層金氧半電容元件之效應 Effect of Tensile-stress on MOS Capacitors with Rapid Thermal Ultra-Thin Gate Oxides |
作者: | Chien-Yu Liu 劉建語 |
指導教授: | 胡振國(Jenn-Gwo Hwu) |
關鍵字: | 伸張應力:快速熱成長:薄閘極氧化層:金氧半電容, Tensile stress:MOS Capacitor:Rapid Thermal Ultra-thin Gate Oxides, |
出版年 : | 2008 |
學位: | 碩士 |
摘要: | 當金氧半元件尺寸縮小以達到高效能表現時,矽氧化層的厚度也隨之變薄。此外,為了達到更高的製程掌握度,超薄熱成長氧化層製程的溫度條件必須控制在較低溫環境,這些趨勢也因此導致元件漏電流的增加以及不穩定性。由於漏電流的增加將降低元件電特性的品質,而矽氧化層的可靠度也將影響元件的運作穩定性,在本篇論文中提出一個在快速熱成長氧化過程中施加應力於矽晶圓使之彎曲的技術,用以改善二氧化矽做為超薄閘極氧化層的品質及可靠度。
在第一章中,我們介紹金氧半電容元件的分析原理和此研究的實驗設置以及計算出施加在實驗中的機械應力大小。接著,在第二章中,經由分析樣品的電容與電壓,電流與電壓的關係圖去探討不同應力條件下成長的p型金氧半電容元件的詳細電特性,包含平帶電壓偏移,漏電流,及氧化層生長機制等各種特性的不同。實驗結果顯示出經由在快速熱成長過程中施加機械伸張應力於矽基板可以產生高品質的矽氧化層。第三章中,我們對氧化層成長過程中施加伸張應力的元件去測試它們的可靠度,包括TDDB以及SILC。經由這些測試,我們發現金氧半元件的快速熱成長氧化層在成長過程中施加伸張應力可展現較佳的可靠度。最後,我們針對這篇論文給予結論及未來研究方向。 As MOS devices are scaled down to achieve high performance, the thicknesses of silicon dioxides are also scaled down. Besides, the growth temperature of thermal ultra-thin oxides is reduced to obtain better control. This trend results in gate leakage current increasing and unreliability. And the gate leakage current increasing would degrade devices’ electrical characteristics, the unreliability of oxides may make devices unstable in operation. In this thesis, a technique to improve the quality and reliability of SiO2 as ultra-thin gate dielectrics by bending the silicon wafer during rapid thermal oxidation is proposed. In Chapter 1, we introduce analysis models of MOS capacitors and experiment setup in this study, and calculate the strength of mechanical stress applied in this work. Then, in Chapter 2, the detailed electrical characteristics of MOS (p) structures with various oxidation processes are analyzed through C-V curves and I-V curves of samples. The different characteristics of MOS (p) structures, including flat-band voltage shift, leakage current, and oxide growth kinetics are found in this work. The experimental results show that the quality of oxides prepared by rapid thermal process can be improved by oxidation with mechanical tensile stress applied on silicon substrate. In Chapter 3, the reliability properties of tensile-stress MOS (p) samples, including time dependent dielectric breakdown (TDDB) and stress induced leakage current (SILC) are examined. After the test, it is found that the tensile-stress MOS (p) samples in the SILC and TDDB test maintain better quality in term of reliability than non-stress MOS (p) samples. In the last chapter, a conclusion and suggestions for future work are given. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/37733 |
全文授權: | 有償授權 |
顯示於系所單位: | 電子工程學研究所 |
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