請用此 Handle URI 來引用此文件：
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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳錫侃 | |
| dc.contributor.author | Ming-Chuan Chen | en |
| dc.contributor.author | 陳明傳 | zh_TW |
| dc.date.accessioned | 2021-06-13T15:29:14Z | - |
| dc.date.available | 2011-07-21 | |
| dc.date.copyright | 2008-07-21 | |
| dc.date.issued | 2008 | |
| dc.date.submitted | 2008-07-16 | |
| dc.identifier.citation | 1.L.C. Chang and T.A. Read, Trans. AIME., 189
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/37469 | - |
| dc.description.abstract | Ti50Ni50與Ti50Ni40Cu10形狀記憶合金在500℃氧化30~60分鐘後可得表面Ni元素濃度較低、表面較平坦以及含有Ni-free region的氧化保護層，因而能夠提升其抗腐蝕性並具有良好之生物相容性。在此氧化膜上利用脈衝式電漿輔助化學氣相沉積法(DC-Pulsed PECVD)沉積六甲基二矽胺(HMDSZ)薄膜並活化表面以產生自由基，接著以UV光誘導接枝聚合丙烯醯胺(AAm)，再以碳化二亞胺(EDAC)為促進劑，使薄膜上之胺基與肝素的羧基縮合形成共價鍵，由FTIR光譜結果證明AAm接枝與肝素固定之成功。經肝素固定後進行抗凝血試驗，由SEM可觀察到的確能夠抑制血纖維蛋白網狀構造之形成，而具有抗凝血之效果。本研究同時對AZ91鎂合金進行電漿表面改質，利用DC-Pulsed PECVD於AZ91上沉積HMDSZ-SiO2薄膜。此層薄膜可使水接觸角由85°下降至70°左右，其表面粗糙度也由原本之12nm降至6~8nm，而薄膜之硬度為163.1Hv。在氧氣流量為1sccm、腔體壓力為220mtorr及沉積時間30分鐘下可以得到最快之薄膜沉積速率，且其FTIR光譜之Si-O特徵峰強度最大，在3.5 wt%鹽水中之抗腐蝕性表現也最好，可降低其腐蝕電流密度達3個數量級。 | zh_TW |
| dc.description.abstract | Ti50Ni50 and Ti50Ni40Cu10 Shape Memory Alloys (SMAs) are oxidized in air at 400-600℃. Experimental results indicate that Ti50Ni50 SMA oxidized at 500℃ for 1 hour can obtain a smooth protective oxide layer with a Ni-free region and the best oxidation condition for Ti50Ni40Cu10 SMA is at 500℃ for 30 minutes. The corrosion resistance of oxidized Ti50Ni50 and Ti50Ni40Cu10 SMAs in Hanks’ solution can be improved and oxidized layers on Ti50Ni50 and Ti50Ni40Cu10 SMAs both have good biocompatibility. Thereafter, HMDSZ thin film deposited on these oxidized layers by DC-pulsed PECVD, the AAm thin film coated by grafting polymerization and heparin immobilized on it. These coatings are proved successfully by FTIR. After heparin immobilization, the surface water contact angle decreases from 66° to 37° and the formation of fibrin network can be reduced to achieve the anti-coagulation. In this study, HMDSZ-SiO2 thin films are also deposited on AZ91 Mg alloy by DC-pulsed PECVD of HMDSZ, O2 and Ar mixture. After this thin film deposited at 1sccm O2 flow rate and 220mtorr for 30 minutes, its Si-O intensity is high and the corrosion current density of AZ91 in 3.5 wt% NaCl solution can be reduced up to 3 orders. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T15:29:14Z (GMT). No. of bitstreams: 1 ntu-97-R95527041-1.pdf: 5064710 bytes, checksum: a2e7e42c43b2afccbae4d98d49fb643a (MD5) Previous issue date: 2008 | en |
| dc.description.tableofcontents | 目錄
致謝 i 摘要 iii Abstract v 目錄 vii 第一章 前言 1 1-1 TiNi形狀記憶合金之表面改質 1 1-2 鎂合金之表面改質研究 2 第二章 文獻回顧 3 2-1 形狀記憶合金(SMAs)簡介 3 2-1-1 形狀記憶效應(SME) 3 2-1-1-1 熱彈型麻田散體變態 4 2-1-1-2 形狀記憶效應(SME)之機制 5 2-1-2 擬彈性(PE) 6 2-2 TiNi基形狀記憶合金(SMAs) 7 2-2-1 TiNi形狀記憶合金之各相與結晶構造 7 2-2-2 TiNi形狀記憶合金之力學特性 8 2-2-3 TiNi形狀記憶合金之生物相容性 11 2-2-4 TiNi形狀記憶合金之表面改質 13 2-3 TiNiCu三元合金簡介 14 2-4 生物分子之固定 15 2-4-1 固定理論 15 2-4-2 共價鍵接合機制 17 2-4-3 血液與凝血機制 18 2-4-4 生物單體-肝素(Heparin)簡介 19 2-5 鎂合金簡介 20 2-5-1 鎂合金之製備與加工 20 2-5-2 鎂合金之特性 21 2-5-3 鎂合金之用途與限制 21 2-5-4 鎂合金之表面改質 22 2-6 薄膜製程 23 2-6-1 電漿簡介 23 2-6-2 電漿基本反應 24 2-6-3 電漿表面改質 26 2-6-4 電漿輔助化學氣相沈積(PECVD) 27 2-6-5 直流輝光放電(D. C. glow discharge) 28 2-6-6 脈衝式直流電漿輔助化學氣相沈積(Pulsed-DC PECVD) 30 第三章 實驗方法及步驟 51 3-1 TiNi基形狀記憶合金之表面改質 51 3-1-1 TiNi基SMAs之製備 51 3-1-2 氧化膜之生成 52 3-1-3 薄膜製程設備 52 3-1-4 沉積HMDSZ薄膜 52 3-1-5 薄膜接枝聚合AAm 53 3-1-6 肝素之固定 53 3-2 TiNi基SMAs表面改質後之實驗分析 54 3-2-1 DSC量測實驗 54 3-2-2 XRD繞射分析 54 3-2-3 薄膜表面型態之量測 54 3-2-4 輝光放電表面縱深成份分佈 54 3-2-5 電化學分析 55 3-2-6 生物相容性實驗 55 3-2-6-1 細胞毒性試驗(Cytotoxicity Assay) 55 3-2-6-2 細胞存活率試驗(Cell Viability, MTT Assay) 56 3-2-7 微區傅利葉轉換紅外線光譜儀(Micro-FTIR) 56 3-2-8 水接觸角之量測 57 3-2-9 血纖維蛋白網狀構造(Fibrin Network)之觀察 57 3-3 鎂合金之表面改質 58 3-3-1 AZ91鎂合金之製備 58 3-3-2 薄膜製程設備 58 3-3-3 HMDSZ-SiO2薄膜之製備 58 3-4 鎂合金表面改質後之實驗分析 59 3-4-1 薄膜沉積速率之量測 59 3-4-2 水接觸角與表面粗糙度之量測 59 3-4-3 薄膜化學性質之量測 59 3-4-4 硬度試驗 59 3-4-5 抗蝕性之評估試驗 60 第四章 TiNi基SMAs表面改質之結果與討論 73 4-1 氧化膜性質 73 4-1-1 DSC量測結果 73 4-1-2 氧化薄膜結晶構造XRD分析 73 4-1-3 表面型態之觀察 74 4-1-4 表面縱深成份分佈 75 4-1-5 電化學實驗評估 78 4-1-6 生物相容性之探討 79 4-1-7 TiNi SMAs氧化熱處理表面改質之結論 80 4-2 表面接枝及抗凝血藥物之固定 81 4-2-1 FT-IR之分析結果 82 4-2-2 水接觸角 83 4-2-3 抗凝血之試驗分析 83 4-2-4 TiNi SMAs接枝AAm及固定肝素後薄膜性能探討之結論 84 第五章 AZ91鎂合金表面改質之結果與討論 103 5-1 薄膜性質 103 5-1-1 直流脈衝式電漿波形 103 5-1-2 薄膜沉積速率 103 5-1-3 水接觸角與表面粗糙度 105 5-1-4 FT-IR之結果 105 5-1-5 硬度試驗之結果 106 5-2 抗腐蝕性之分析結果 107 第六章 結論 122 參考文獻 123 | |
| dc.language.iso | zh-TW | |
| dc.title | TiNi形狀記憶合金及AZ91鎂合金沉積HMDSZ薄膜表面改質之研究 | zh_TW |
| dc.title | Surface Modification Studies of HMDSZ Thin Film Deposited on TiNi Shape Memory Alloys and AZ91 Mg Alloy | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 96-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 林新智,楊木榮,周棟勝,洪衛朋 | |
| dc.subject.keyword | Ti50Ni50 / Ti50Ni40Cu10形狀記憶合金,AZ91鎂合金,六甲基二矽胺,脈衝式電漿輔助化學氣相沉積法,生物相容性,肝素,抗腐蝕性, | zh_TW |
| dc.subject.keyword | Ti50Ni50 and Ti50Ni40Cu10 Shape Memory Alloys,AZ91,HMDSZ,DC-pulsed PECVD,Biocompatibility,Heparin,Corrosion resistance, | en |
| dc.relation.page | 131 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2008-07-16 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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