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| ???org.dspace.app.webui.jsptag.ItemTag.dcfield??? | Value | Language |
|---|---|---|
| dc.contributor.advisor | 段維新 | |
| dc.contributor.author | Wen-Hsuan Pan | en |
| dc.contributor.author | 潘玟璇 | zh_TW |
| dc.date.accessioned | 2021-06-13T15:26:13Z | - |
| dc.date.available | 2010-08-04 | |
| dc.date.copyright | 2008-08-04 | |
| dc.date.issued | 2008 | |
| dc.date.submitted | 2008-07-17 | |
| dc.identifier.citation | 1. R. Einzinger, “Metal Oxide Varistor Action—A Homojunction Breakdown Mechanism,” Appl. Surf. Sci., 1, 329–40 (1978).
2. W. H. Lee, W. T. Chen, Y. C. Lee, S. P. Lin and T. Yang, “Relationship between Microstructure and Electrical Properties of ZnO-based Multilayer Varistor,” Jpn. J. Appl. Phys., 45 [6A] 5126-5131 (2006). 3. N. Shohata, M. Nakanishi and K. Utsumi, “Multilayer Ceramic Chip Varistor,” Ceramic Transactions Advances in Varistor Technology, Vol. 3, 1988. Edited by L. M. Levinson. The American Creamic Society INC., Westerville, OH; p.329. 4. D. R. Clarke, “Varistor Ceramics,” J. Am. Ceram. Soc., 82 [3] 485-502 (1999). 5. R. Puyane, “Applications and Product Development in Varistor Technology,” J. Mater. Proc. Technol., 55 [2] 268–77 (1995). 6. K. Eda, “Zinc Oxide Varistors,” IEEE Electr. Insul. Mag., 5, 28 (1989). 7. M. Inada, “Formation Mechanism of Nonohmic Zinc Oxide Ceramics,” Jpn. J. Appl. Phys., 19 [3] 409-419 (1980). 8. J. C. Kim and E. Goo, “Morphology and Formation Mechanism of the Pyrochlore Phase in ZnO Varistor Materials,” J. Mater. Sci., 24, 76-82 (1989). 9. T. K. Gupta, “Application of Zinc oxide varistors,” J. Am. Ceram. Soc., 73 [7] 1817-1840 (1990). 10. W. D. Kingery, “Densification during Sintering in the Presence of a Liquid Phase. I. Theory,” J. Appl. Phys., 30 [3] 301-3065 (1959). 11. R. M. German, Sintering Theory and Practice; John Wiley & Sons Inc., New York, NY; pp.225-312 (1996). 12. M. Matsuoka, T. Masuyama and Y. Iida, “Voltage Nonlinearity of Zinc Oxide Ceramics Doped with Alkali-Earth Metal Oxide,” Jpn. J. Appl. Phys., 8, 1275-1275 (1969). 13. M. Matsuoka, “Nonohmic Properties of Zinc Oxide Ceramics,” Jpn. J. Appl. Phys., 10, 736-746 (1971). 14. M. Elfwing, R. Osterlund and E. Olsson, “Differences in Wetting Characteristics of Bi2O3 Polymorphs in ZnO Variator Materials,” J. Am. Ceram. Soc., 83 [9] 2311-2314 (2000). 15. K. I. Kobayashi, O.Wada, M. Kobayashi and Y. Takada, “Continuous Existence of Bismuth at Grain Boundaries of Zinc Oxide Varistor without Intergranular Phase,” J. Am. Ceram. Soc., 81 [8] 2071–2076 (1998). 16. L. Karanovi, D. Poleti and D. Vasovi, “On the Possibility of Pyrochlore Phase Formation in Zinc Oxide Varistor Ceramic,” Materials Letters, 18 [4] 191-196 (1994). 17. E. Olsson, L. K. L. Falk, G. L. Dunlop and R. Osterlund, “The Microstructure of a ZnO Varistor Material,” J. Mater. Sci., 20, 4091-4098 (1985). 18. R. C. Buchanan, Ceramic Materials for Electronics, p.439, Marcel Dekker, Inc. New York, 2004. 19. H. Wang and Y. M. Chiang, “Thermodynamic Stability of Intergranular Amorphous Films in Bismuth-Doped Zinc Oxide,” J. Am. Ceram. Soc., 81 [1] 89-96 (1998). 20. E. Olsson, G. L. Dunlop and R. Osterlund, “Development of Functional Microstructure during Sintering of a ZnO Varistor Material,” J. Am. Ceram. Soc., 76 [1] 65-71 (1993). 21. S. Ezhilvalavan and T. R. N. Kutty, “Low-voltage Varistors based on Zinc Antimony Spinel Zn7Sb2O12,” Appl. Phys. Lett., 68 [19] 2693-2695 (1996). 22. J. Kim, T. Kimura and T. Yamaguchi, “Sintering of Zinc Oxide doped with Antimony Oxide and Bismuth Oxide,” J. Am. Ceram. Soc., 72 [8] 1390-1395 (1989). 23. N. Daneu, A. Recnik and S. Bernik, “Grain Growth Control in Sb2O3-doped Zinc Oxide,” J. Am. Ceram. Soc., 86, 1379-1384 (2003). 24. T. Takemura, M. Kobatashi, Y. Takada and K. Sato, “Effects of Antimony Oxide on the Characteristics of ZnO Varistors,” J. Am. Ceram. Soc., 70 [4] 237-241 (1987). 25. E. Olsson and G. L. Dunlop, “Characterization of Individual Interfacial Barriers in a ZnO Varistor Material,” J. Appl. Phys., 66 [8] 3666-3675 (1989). 26. Y. Karakas and W. E. Lee, “Processing and Phase Evolution in a ZnO Varistor prepared by Oxide Precipitation,” J. Brit. Ceram. Soc., 93 [2] 65-70 (1994). 27. K. Koumoto, N. Aoki, N. Kitaori and H. Yanagida, “Enhancement of Electrical Conduction in ZnO by CoO Doping,” J. Am. Ceram. Soc., 65,C-93-C94 (1982). 28. D. J. Binks and R. W. Grimes, “Incorporation of Monovalent Ions in ZnO and their Influence on Varistor Degradation,” J. Am. Ceram. Soc., 76 [9] 2370-2372 (1993). 29. T. Miyoshi, K. Maeda, K. Takahashi and T. Yamazaki, Advances in Ceramics, edited by L.M. Levison and D. Hill (The American Ceramic Society, Columbus, OH 1981), Vol. 1, p.309. 30. J. Fan and R. Freer, “The Roles Played by Ag and Al Dopants in Controlling the Electrical Properties of ZnO Varistors,” J. Appl. Phys., 77 [9] 4795-4800. 31. M. Peiteado, J. F. Fern′andez and A. C. Caballero, “Varistors based in the ZnO–Bi2O3 System: Microstructure Control and Properties,” J. Eur. Ceram. Soc., 27, 3867-3872 (2007). 32. S. J. L. Kang and Y. I. Jung, “Sintering Kinetics at Final Stage Sintering: Model Calculation and Map Construction,” Acta. Mater., 52 [15] 4573-4578 (2004). 33. J. Kim, T. Kimura and T. Yamaguchi, “Effect of Bismuth Oxide Content on the Sintering of Zinc Oxide,” J. Am. Ceram. Sot., 72 [8] 1541-1544 (1989). 34. T. Senda and R. C. Bradt, “Grain Growth in Sintered ZnO and ZnO-Bi2O3 Ceramics,” J. Am. Ceram. Sot., 73 [1] 106-114 (1990). 35. J. Kim, T. Kimura, and T. Yamaguchi, “Microstructure Development in Sb2O3-doped ZnO,” J. Mater. Sci., 24, 2581-2586 (1989). 36. T. Senda and R. C. Bradt, “Grain Growth of Zinc Oxide during the Sintering of ZnO-Sb2O3 Ceramics,” J. Am. Ceram. Soc., 74 [6] 1296-l302 (1991). 37. A. Mergen, and W. E. Lee, “Microstructural Ralations in BZS Pyrochlore-ZnO Mixtures,” J. Eur. Ceram. Soc., 17, 1049–1060 (1997). 38. S. F. Wang, J. P. Dougherty, W. Huebner and J. G. Pepin, “Silver–Palladium Thick-Film Conductors,” J. Am. Ceram. Soc., 77 [12] 3051–3072 (1994). 39. M. A. de la Rubia, M. Peiteado, J. de Frutos, F. Rubio-Marcos, J.F. Fern′andez and A.C. Caballero, “Improved Non-linear Behaviour of ZnO-based Varistor Thick Films Prepared by Tape Casting and Screen Printing,” J. Eur. Ceram. Soc., 27, 3887–3891 (2007). 40. V. Kim, “Silver Migration–The Mechanism and Effects on Thick-Film Conductors,” 41. S. F. Wang and W. Huebner, “Interaction of Ag/Pd Metallization with Lead and Bismuth Oxide-Based Fluxes in Multilayer Ceramic Capacitors,” J. Am. Ceram. Soc., 75 [9] 2339–2352 (1992). 42. R. B. Amin and M. A. Rosenberg, “Precious Metal Electrode System for Multilayer Ceramic Capacitors,” Report on the Workshop on the Reliability of Multilayer Ceramic Capacitors; pp. 91-106, Academic Press, New York, 1983. 43. B. G. Kakhan, V. B. Lazarev and I. S. Shaplygin, “Subsolidus Part of the Equilibrium Diagram of the Bi2O3-MO Binary Systems,” Russ. J. Inorg. Chem., 24 [6] 922-925 (1979). 44. O. A. Short, “Ceramic Capacitors with Noble Electrodes Alloys,” U.S. Pat. No.3 798 516, 1974. 45. L. M. Levinson and H. R. Philipp, “Zinc Oxide Varistors-A Review,” Ceram. Bull., 65 [4] 639-646 (1986). 46. G. E. Pike, “Semiconducting Polycrystalline Ceramic”; pp.731-754 in Materiala Science and Technology, Vol. 11. Edited by M. V. Swain. VCH, Weinheim, Germany, 1994. 47. L. M. Levinson and H. R. Philipp, “Application and Characterization of ZnO Varistors,” Electrical Engineering and Electronics, pp.375-402 (1986). 48. P. R. Emtage, “The Physics of Zinc Oxide Varistors,” J. Appl. Phys., 48 [10] 4372 (1977). 49. E. Olsson and G. L. Dunlop, “Development of Intergranular Microstructure in ZnO Varistor Materials,” Proceedings of the 6th CIMTEC, High Tech Ceramics, ed. P. Vincenzini. Elsevier Science BV, Amsterdam, pp.1765-l774 (1987). 50. J. Clayton, H. Takamura, R. Metz, H. L. Tuller and B. J. Wuensch, “The Electrical and Defect Properties of Bi3Zn2Sb3O14 Pyrochlore: A Grain-Boundary Phase in ZnO-Based Varistors,” J. Electroceram., 7, 113-120 (2001). 51. P. R. Emtage, “Statistics and Grain Size in Zinc Oxide Varistors,” J. Appl. Phys., 50 [11] 6833-6837 (1979). 52. E. R. Leite, M. A. L. Nobre, E. Longo and J. A. Varela, “Microstructural Development of ZnO Varistors during Reactive Liquid Phase Sintering,” J. Mater. Sci., 31 [20] 5391-5398 (1996). 53. J. G. Pepin, “Subsolidus Phase Relations in the System Pd-Ag-O and Application on Multilayer Ceramic Capacitor Electrodes,” Adv. Ceram. Mater., 3 [5] 517-519 (1988). 54. S. S. Cole, “Oxidation and Reduction of Palladium in the presence of Silver,” J. Am. Ceram. Soc., 68 [4] C-106-C-107 (1985). 55. S. F. Wang and W. Huebner, “Interaction of Silver/Palladium Electrodes with Lead- and Bismuth-Based Electroceramics,” J. Am. Ceram. Soc., 76 [2] 474–480 (1993). 56. R. E. Newnham, “Structure-Property Relations in Multilayer Ceramics,” Report on the Workshop on the Reliability of Multilayer Ceramic Capacitors; pp. 53-56, Academic Press, New York, 1983. 57. D. R. Clarke, “The Microstructural Location of the Intergranular Metal Oxide Phase in a Zinc Oxide Varistor,” Jpn. J. Appl. Phys., 49, 2407 (1978). 58. M. Inada, “Effect of Heat-Treatment on Crystal Phases, Microstructure and Electrical Properties of Nonohmic Zinc Oxide Ceramics,” Jpn. J. Appl. Phys., 18, [8] 1439-1446 (1979). 59. E. Olsson and G. L. Dunlop, “The Effect of Bi2O3 Content on the Microstructure and Electrical Properties of ZnO Varistor Materials,” J. Appl. Phys., 66 [9] 4317-4324 (1989). 60. A. Mergen and W. E. Lee, “Fabrication and Crystal Chemistry of Bi3/2ZnSb3/2O7 Pyrochlore,” J. Eur. Ceram. Soc., 16, 1041-1050 (1996). 61. J. Wong and W. G. Morris, “Microstructure and Phases in Nonohmic ZnO-Bi2O3 Ceramics,” Am. Ceram. Soc. Bull., 53 [11] 816-820 (1974). 62. J. H. Hwang, T. O. Mason and V. P. Dravid, “Microanalytical Determination of ZnO Solidus and Liquidus Boundaries in the ZnO-Bi2O3 System,” J. Am. Ceram. Soc., 77 [6] 1499-1504 (1994). 63. P. R. Bueno, M. R. de Gassia-Santos, E. R. Leite and E. Longo, “Nature of the Schottky-type Barrier of Height Dense SnO2 Sysyems displaying Nonohmic Behavior,” J. Appl. Phys., 88 [11] 6545-6548 (2000). 64. T. B. Massalski, J. L. Bennett and H. Baker, “Binary Alloy Phase Diagram,” Vol. 1, 1986. Published by American Society for Metals, Metals Parks, OH; p.54. 65. T. K. Gupta and R. L. Coble, “Sintering of ZnO: I, Densification and Grain Growth,” J. Am. Ceram. Soc., 51 [9] 521-525 (1968). 66. V. Kim, “Silver Migration–The Mechanism and Effects on Thick-Film Conductors,” (2003). 67. M. Peiteado, J. F. Fern′andez and A. C. Caballero, “Processing strategies to Control Grain Growth in ZnO–Based Varistors,” J. Eur. Ceram. Soc., 25, 2999-3003 (2005). 68. K. Mukae, “Zinc Oxide Varistors with Praseodymium Oxide,” Ceram. Bull., 66 [9] 1329-1331 (1987). 69. F. Greuter, “Electrically Active Interfaces in ZnO Varistors,” Solid State Ionics, 75, 65-78 (1995). | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/37381 | - |
| dc.description.abstract | The performances of ceramics depend strongly on their microstructures. Recently, ZnO-based multilayer varistors (MLVs) have become available. In the present study, AgPd inner electrodes are used in the multilayered ZnO-based varistors. The microstructure of ZnO-based MLV is affected by sintering temperature, dwell time, layer thickness, additives and so on. The relationships between microstructures and electrical properties of the ZnO-based multilayer varistors are therefore investigated.
The results indicate that the breakdown voltage (VB) and nonlinear coefficient (α) are directly controlled by the layer thickness after sintering at 1000°C for 60 min. Although the average size of ZnO grains within MLVs increases with the increasing sintering temperature and time, the effects of secondary phases and discontinuity of AgPd electrodes also affect the electrical properties profoundly. A pyrochlore phase is formed due to the interaction between Bi-rich liquid and spinel phase during heating and cooling stages. The Bi2O3–rich liquid phase can penetrate into the inner electrode and reacts with AgPd to form PdBi2O4. Discontinuity of AgPd electrodes induces the increase of the breakdown voltage and decrease of nonlinear properties. The optimum microstructure and nonlinear ohmic characteristic of the ZnO-based MLV with layer thickness of 10 μm can be obtained by sintering at 1000°C for 60 min. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T15:26:13Z (GMT). No. of bitstreams: 1 ntu-97-R95527031-1.pdf: 8131619 bytes, checksum: a5899f46227660450ac96f9e8b7d0cb1 (MD5) Previous issue date: 2008 | en |
| dc.description.tableofcontents | 摘要 I
Abstract III List of Tables VIII List of Figures IX Chapter 1 Introduction 1 1-1 Background 1 1-2 Motivation 2 Chapter 2 Literature Survey 4 2-1 Basic Structure of Zinc Oxide (ZnO) 4 2-2 Mechanism of Liquid Phase Sintering 6 2-3 Composition and Microstructure of ZnO-Based Varistors 8 2-3-1 Microstructural Observation of ZnO-Based Varistors 8 2-3-2 Role of Additives 11 2-3-3 Grain Growth Behavior of ZnO-Based Varistors 15 2-3-4 Development of Multilayer Varistors 17 2-3-5 Interaction between Ceramic and Electrode Materials 17 2-4 Electrical Properties of ZnO-Based Varistors 23 2-4-1 Current-Voltage (I-V) Characteristics 23 2-4-2 Physical Basis of Varistor Behavior 24 2-5 Correlation between Microstructures and Electrical Properties 28 2-5-1 Breakdown Voltage 28 2-5-2 Nonlinear Coefficient 31 2-5-3 Leakage current 32 Chapter 3 Experimental Procedures 35 3-1 Materials 35 3-2 Preparation of Specimens 37 3-3 Analyses of Sintered Specimens 40 3-3-1 Microstructure Observation 40 3-3-2 Grain Size Distribution 41 3-3-3 Phase Identification 42 3-3-4 Electrical Properties Measurement 45 Chapter 4 Results 47 4-1 Microstructural Observation and Grain Size Distribution 47 4-1-1 Effect of Sintering Temperature 47 4-1-2 Effect of Sintering Time 55 4-1-3 Effect of Layer Thickness 62 4-2 Composition and Phase Analysis 69 4-3 Electrical Properties 93 4-3-1 Effect of Sintering Temperature 93 4-3-2 Effect of Sintering Time 98 4-3-3 Effect of Layer Thickness 102 Chapter 5 Discussions 106 5-1 Phase Characteristics 106 5-1-1 Chemical Reaction of AgPd and Bi2O3 106 5-1-2 Formation of Intergranular Phases 109 5-3 Microstructural Characterization 114 5-4 Grain Growth Behavior 116 5-5 Continuity of Inner Electrodes 119 5-5 Electrical Properties 120 5-5-1 I-V Curve 120 5-5-3 Breakdown Voltage 123 5-5-4 Nonlinear Coefficient 130 5-5-5 Leakage Current 132 Chapter 6 Conclusions 135 References 137 | |
| dc.language.iso | en | |
| dc.subject | 非線性係數 | zh_TW |
| dc.subject | 氧化鋅 | zh_TW |
| dc.subject | 積層變阻器 | zh_TW |
| dc.subject | 銀鈀 | zh_TW |
| dc.subject | 電極 | zh_TW |
| dc.subject | 晶粒尺寸 | zh_TW |
| dc.subject | 晶粒分佈 | zh_TW |
| dc.subject | 微結構 | zh_TW |
| dc.subject | 電性 | zh_TW |
| dc.subject | 崩潰電壓 | zh_TW |
| dc.subject | Grain Size | en |
| dc.subject | Electrode | en |
| dc.subject | Size Distribution | en |
| dc.subject | Nonlinear Coefficient | en |
| dc.subject | Breakdown Voltage | en |
| dc.subject | Electrical properties | en |
| dc.subject | Microstructure | en |
| dc.subject | ZnO | en |
| dc.subject | Multilayer varistor | en |
| dc.subject | AgPd | en |
| dc.title | 氧化鋅積層變阻器的微結構與電性間之關係研究 | zh_TW |
| dc.title | Relationships between Microstructure and Electrical Properties of ZnO-based Multilayer Varistor | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 96-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 王錫福,曾文甲,盧宏陽 | |
| dc.subject.keyword | 氧化鋅,積層變阻器,銀鈀,電極,晶粒尺寸,晶粒分佈,微結構,電性,崩潰電壓,非線性係數, | zh_TW |
| dc.subject.keyword | ZnO,Multilayer varistor,AgPd,Electrode,Grain Size,Size Distribution,Microstructure,Electrical properties,Breakdown Voltage,Nonlinear Coefficient, | en |
| dc.relation.page | 145 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2008-07-18 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| Appears in Collections: | 材料科學與工程學系 | |
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