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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/37251完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 謝宗霖 | |
| dc.contributor.author | Chia-Hsien Chao | en |
| dc.contributor.author | 趙家賢 | zh_TW |
| dc.date.accessioned | 2021-06-13T15:22:31Z | - |
| dc.date.available | 2016-08-16 | |
| dc.date.copyright | 2011-08-16 | |
| dc.date.issued | 2011 | |
| dc.date.submitted | 2011-08-11 | |
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Eom, “Epitazial Thin Film Heterostructures of Relaxor Ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3”, Integrated Ferroelectrics, 21, 499 (1998). 41. Z. H. Du, T. S. Zhang, M. M. Zhu and J. Ma, “Direct crystallization of perovskite phase in PMN-PT thin films prepared by polyvinylpyrrolidone modified sol-gel processing and their properties”, Journal of Solid State Chemistry, 182, 1780 (2009). 42. J. H. Park, F. Xu and S. T. Mckinstry, “Dielectric and piezoelectric properties of sol-gel derived lead magnesium niobium titanate films with different textures”, Journal of Applied Physics, 89, 568 (2001). 43. Z. H. Du, T. S. Zhang, M. M. Zhu and J. Ma, “Growth mode of sol-gel derived PLT seeding layers on glass substrates and its effect on templating the oriented growth of PLZT thin films”, Journal of Applied Physics, 105, 061612 (2009). 119 44. F. Fievet, J. P. Lagier and B. Blin, “Homogeneous and Heterogeneous Nuclieations In The Polyol Process For The Preparation Of Micron And Submicron Size Metal Particles”, Solid State Ionics, 32/33, 198 (1989). 45. Z. Zhang, B. Zhao and L. Hu, “PVP Protective Mechanism of Ultrafine Silver Powder Synthesized by Chemical Reduction Processes”, Journal of Solid State Chemistry, 121, 105 (1996). 46. Z. H. Du, T. S. Zhang, M. M. Zhu and J. Ma, “Perovskite crysrallization kinetics and dielectric properties of the PMN-PT films prepared by polymer-modified sol-gel processing”, Journal of Materials Research, 24, 1576 (2009). 47. 陳慧英，黃定加，朱秦億，溶膠凝膠法在薄膜製備上之應用，化工技術，第七卷，第十一期，152(1999). 48. TF Analyzer 2000 FE-Module User Manual，aixACCT Systems GmbH. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/37251 | - |
| dc.description.abstract | 由於(1-x)PMN-xPT薄膜屬於高溫退火製程的鐵電材料，且容易出現第二相，因此退火溫度必須高達700 ℃以上才能降低第二相的存在，但也導致(1-x)PMN -xPT薄膜所能相匹配的元件製程較有限。本研究目的為在低溫退火製備(1-x)PMN-xPT薄膜，期望藉由降低退火溫度達到穩定良好的表現性質，適合用於製程中可相匹配的元件方面。且配置不同成分比例的(1-x)PMN-xPT薄膜以比較其差異性。
本研究使用溶膠-凝膠法製備(1-x)PMN-xPT薄膜，並對(1-x)PMN-xPT薄膜進行成相、顯微組織、介電、鐵電性質及熱分析的檢視， 此外本研究選用銦化錫導電玻璃(ITO/glass)基板並鍍上鈦酸鉛鑭(Pb0.86La0.14TiO3，PLT)當作晶種層(seeding layer)形成PLT/ITO/glass基板製備(1-x)PMN-xPT薄膜，主要原因有三：(1)選用PLT/ITO/glass基板製備(1-x)PMN-xPT薄膜較少文獻研究，(2)利用低溫退火製備(1-x)PMN-xPT薄膜可使得元件應用上可達到多元性，(3)基板具有透明特性，期望可應用於光電研究。 本研究製備不同成分比例之(1-x)PMN-xPT，分別為0.9PMN-0.1PT、0.7PMN- 0.3PT及0.55PMN-0.45PT等三種成分。且由於添加高分子PVP的緣故，在燒結過程中高分子揮發掉，使得(1-x)PMN-xPT薄膜的顯微結構形成多孔狀。 藉由顯微結構的觀察、質譜儀分析及持溫時間的試驗得知，含鎂含量較多的0.9PMN-0.1PT薄膜，再經過熱處理退火中，鎂含量也揮發較多。致使0.9PMN- 0.1PT在B-site的晶格缺陷多，使得介面能提高且異質介面多，導致0.9PMN- 0.1PT先以異質成核的方式使介面能下降，再以晶粒成長和粗化的方式使晶粒增加。因此0.9PMN-0.1PT在顯微結構方面以成核占主要部份。反之含鎂含量相對較少的0.7PMN-0.3PT及0.55PMN-0.45PT，鎂揮發也較少，晶格缺陷少使得兩者成分比例的(1-x)PMN-xPT在顯微結構方面會以晶粒成長與緻密化機制占大部分。 本研究另外做了退火燒結的持溫時間增加的試驗，研究結果得知藉由退火持溫時間的增加，可使(1-x)PMN-xPT薄膜晶粒成長、孔隙率降低及緻密化。對於改善鐵電及介電特性，例如：殘留極化值增加、介電常數增加及frequency dispersion現象皆可獲得更佳的性質。 | zh_TW |
| dc.description.abstract | Lead magnesium niobate-lead titanate ((1-x)PMN-xPT) thin films are an important class of ferroelectric materials and high temperature annealing is typically required to produce the perovskite phase in these thin films. Existing studies have suggested that in order to avoid the formation of second phases (e.g., pyrochlore), annealing at more than 700C is commonly needed. The high annealing temperature hinders the integration of ferroelectric/piezoelectric (1-x)PMN-xPT thin films into the production of engineering components. The main purpose of this study is therefore to prepare (1-x)PMN-xPT thin films of various PMN:PT ratios at low annealing temperatures. This is achieved with the aid of a polymer, polyvinylpyrrolidone (PVP).
The (1-x)PMN-xPT thin films were prepared by the sol-gel method. PVP was added to the PMN-PT sol before the sol mixture was spin-coated onto the indium tin oxide (ITO)/glass substrates. A lead lanthanum titanate (Pb0.86La0.14TiO3) seeding layer was deposited onto the ITO/glass substrate first in order to promote the crystallization of PMN-PT. Three different thin film compositions were prepared in this study: 0.9PMN-0.1PT, 0.7PMN-0.3PT and 0.55PMN-0.45PT. The crystalline, microstructure, dielectric and ferroelectric properties of the prepared thin films were then characterized. The characterization data indicate that with the aid of PVP, the ferroelectric perovskite phase can be successively produced in the 0.9PMN-0.1PT, 0.7PMN-0.3PT and 0.55PMN-0.45PT thin films with a low annealing temperature of 450 C.This is due to the exothermic reaction/decomposition of PVP during annealing, providing the necessary heat for forming the perovskite phase. However, the addition of PVP renders the thin films to exhibit a porous microstructure. The 0.9PMN-0.1PT thin film in particular exhibits a highly porous microstructure characterized by loose lattices of fused small grains. This is believed to be caused by the evaporation of a large quantity of Mg during annealing, causing the increase in interfacial surface energy. This would in turn promote the fast nucleation of small PMN-PT grains at the expense of densification and grain growth. The density of the 0.9PMN-0.1PT thin film can be improved by lengthening the annealing time or by increasing the amount of Mg (i.e., higher than what is required by the stoichiometric ratio) in the original sol mixture. By lengthening the annealing time, the density and ferroelectric properties of the prepared (1-x)PMN-xPT thin films can be improved. The relative permittivities of the films show a broad peak as a function of temperature; this indicates the relaxor nature of the films. However, the frequency dispersion for the temperature of maximum permittivity (Tmax) is not obvious. This is believed to be caused by the microstructural porosity, weakening the frequency dependence of dielectric behaviors. | en |
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| dc.description.tableofcontents | ix
目錄 口委審定書..................................................................................................................... ⅱ 致謝................................................................................................................................ ⅲ 摘要.................................................................................................................................. v Abstract ........................................................................................................................... vii 目錄................................................................................................................................. ix 圖目錄............................................................................................................................. xii 表目錄.......................................................................................................................... xviii 第一章 緒論................................................................................................................... 1 1.1 前言.................................................................................................................... 1 1.2 研究方向及目的................................................................................................ 1 1.3 論文架構............................................................................................................ 2 第二章 文獻回顧............................................................................................................. 3 2.1 鐵電陶瓷歷史發展............................................................................................ 3 2.2 鐵電陶瓷基本性質............................................................................................ 6 2.2.1 居里溫度................................................................................................. 8 2.2.2 「極化量-電場」遲滯曲線 ................................................................. 10 2.2.3 晶粒大小的影響................................................................................... 11 2.3 Relaxor鐵電陶瓷特性 ..................................................................................... 15 2.3.1 去極化溫度........................................................................................... 21 2.3.2 異相共存邊界....................................................................................... 22 2.4 鉛基relaxor ferroelectrics陶瓷 ...................................................................... 25 2.4.1 鈮鎂酸鉛(PbMg1/3Nb2/3，PMN) .......................................................... 28 2.4.2 鈦酸鉛(PbTiO3，PT) ........................................................................... 33 2.4.3 鈮鎂酸鉛-鈦酸鉛(PbMg1/3Nb2/3-PbTiO3，(1-x)PMN-xPT) ............... 34 x 2.5 溶膠-凝膠法及旋轉塗佈法 ............................................................................ 42 第三章 實驗方法......................................................................................................... 44 3.1 材料製備.......................................................................................................... 44 3.1.1 起始原料............................................................................................... 44 3.1.2 製備PLT 前驅物 ................................................................................. 45 3.1.3 製備(1-x)PMN-xPT 前驅物 ................................................................ 46 3.1.4 旋轉塗佈法製備薄膜及熱處理........................................................... 48 3.2 X光繞射分析 ................................................................................................... 51 3.3 掃描式電子顯微鏡分析.................................................................................. 52 3.4 感應耦合電漿質譜分析.................................................................................. 53 3.5 常溫電滯曲線分析.......................................................................................... 54 3.6 介電性質分析.................................................................................................. 56 3.7 示差掃描熱量分析.......................................................................................... 57 第四章 實驗結果與討論............................................................................................... 58 4.1 PLT seeding layer .............................................................................................. 58 4.2 X光繞射分析 ................................................................................................... 59 4.2.1 有無添加PVP改良薄膜的比較 ......................................................... 61 4.2.2 有添加PVP改良不同成分比例薄膜的比較 ..................................... 62 4.3 掃描式電子顯微鏡分析.................................................................................. 66 4.3.1 有無添加PVP改良薄膜的比較 ......................................................... 66 4.3.2 有添加PVP改良不同成分比例的薄膜比較 ..................................... 69 4.4 感應耦合電漿質譜分析.................................................................................. 80 4.4.1 有添加PVP改良不同成分比例薄膜的比較 ..................................... 80 4.5 電滯曲線分析.................................................................................................. 81 4.5.1 有添加PVP改良不同成分比例薄膜的比較 ..................................... 81 xi 4.6 介電性質分析.................................................................................................. 86 4.6.1 有添加PVP改良不同成分比例薄膜的比較 ..................................... 86 4.7 示差掃描熱量分析.......................................................................................... 90 4.8 不同基底對於低溫退火薄膜生長的比較...................................................... 93 4.8.1 X光繞射分析 ........................................................................................ 93 4.8.2 掃描式電子顯微鏡分析....................................................................... 96 4.8.3 電滯曲線分析..................................................................................... 103 4.8.4 介電性質分析..................................................................................... 107 第五章 結論............................................................................................................... 111 5.1 研究成果........................................................................................................ 111 5.2 未來研究方向................................................................................................ 113 參考文獻....................................................................................................................... 114 xii 圖目錄 圖2-1 Relaxor-PbZrO3-PbTiO3固溶系統三元相圖 .................................................... 4 圖2-2 鐵電薄膜製程之重要歷史演進 ........................................................................ 4 圖2-3 鐵電材料中tetragonal結構有六個極化方向，隨著電場或應力所發生switching之示意圖 .......................................................................................................... 7 圖2-4 鐵電材料中的所擁有的性質相關聯性 ............................................................ 7 圖2-5 典型perovskite結構，其化學式用ABO3表示 .............................................. 8 圖2-6 0.775PMN-0.225PT在不同頻率，dielectric constnt隨溫度變化產生的峰值...................................................................................................................................... 9 圖2-7 Curie temperature變化圖。 .............................................................................. 9 (a) first order transition，(b) second order transition。 ................................................... 9 圖2-8 極化-電場遲滯曲線圖 ..................................................................................... 11 圖2-9 PZT鐵電材料之晶粒大小對Pr的影響 ......................................................... 14 圖2-10 PZT鐵電材料之晶粒大小對於Ec與Pr之電滯曲線圖 .............................. 14 圖2-11 BaTiO3材料隨著晶粒大小的減少，dielectric constant也隨著減小 ......... 15 圖2-12 PST有序的perovskite結構示意圖 .............................................................. 18 圖2-13 Ｘ光繞射儀分析顯示在PST在不同熱處理情況下，所顯示晶格結構序化程度不同，當S越大表示晶格結構越趨近於有序 ................................................ 19 圖2-14 DSC熱分析顯示，當S越大越趨近有序排列，坡峰越陡峭 ................... 20 圖2-15 macro domain和micro domain隨著溫度變化之演進 ................................ 22 圖2-16 PbZrO3-PbTiO3及Relaxor-PbTiO3的三元相圖中的MPB區域 ................ 23 圖2-17 structural tolerance factor對electronegativity作圖。若t與χ皆小則易形成pyrochlore phase；反之，t與χ皆大則perovskite phase呈穩定系統 ................. 26 圖2-18 鉛基材料可依domain大小及有序無序結構分為三大類 .......................... 27 圖2-19 圖A為超晶格繞射[011]軸所顯示的PMN繞射圖，圖B為PMN中暗場 xiii 影像顯示有序微晶域大約為2到5 nm ....................................................................... 29 圖2-20 圖(a)為背向散射電子影像所顯示的大的pyrochlore晶粒，圖(b)為鎂元素X-ray mapping ........................................................................................................... 30 圖2-21 圖(a)與圖(b)為PMN相反破斷面SEM影像所顯示pyrochlore phase在{111}面有八面體型態 ................................................................................................... 30 圖2-22 由二維背向電子散射的pyrochlore影像所描繪出pyrochlore phase的八面體示意圖..................................................................................................................... 31 圖2-23 X光繞射分析顯示PMN隨著過量含量的鈮添加，將造成明顯含量的pyrochlore增加 .............................................................................................................. 31 圖2-24 實驗與計算相對照的pyrochlore體積百分比和PMN中過量而不同含量的鈮莫耳百分率的相對關係......................................................................................... 32 圖2-25 在不同濃度條件的seeding layer，PMN中perovskite phase所占比例.... 32 圖2-26 (1-x)PMN-xPT隨著PbTiO3含量增加的相變化圖 ..................................... 37 圖2-27 (1-x)PMN-xPT不同成分比例，可經由圖看出在MPB區域，此成分比例 所表現的性質為最佳..................................................................................................... 38 圖2-28 (1-x)PMN-xPT不同成分比例，最大值與室溫下的極化值，可從圖中看出，MPB區域表現性質較佳 ....................................................................................... 38 圖2-29 (1-x)PMN-xPT薄膜(x=25、30、33、34、35、37、40、50、60、70和80 %)的XRD分析中，當x=80 %至x=35 %時c軸與a軸會越來越接近 .............. 39 圖2-30 晶格常數隨著PbTiO3含量減少至MPB區域呈現tetragonality變化 ...... 40 圖2-31 0.7PMN-0.3PT薄膜在沒有seeding layer的情況下，退火溫度分別為(a) ... 650 ℃、(b) 700 ℃、(c) 750 ℃和(d) 800 ℃的X光繞射分析 [42]。 ...................... 40 圖2-32 高分子PVP單體結構式 ............................................................................... 41 圖2-33 0.57PMN-0.43PT薄膜在PLT/ITO/glass基底上，添加和(1-x)PMN-xPT莫耳數相比的PVP360000單體的不同莫耳比例之X光繞射分析：圖(a) (g) (m) xiv 的莫耳比為0、圖(b) (h) (n)的莫耳比為0.25、圖(c) (i) (o)的莫耳比為0.5、圖(d) (j) (p)的莫耳比為0.75、圖(e) (k) (q)的莫耳比為1.0、圖(f) (l) (r)的莫耳比為1.5。且圖(a)到(f)退火溫度為430 ℃，持溫30 min、圖(g)到(l)退火溫度為460 ℃，持溫30 min、圖(m)到(r)退火溫度為650 ℃，持溫30 min。Pe表示perovskite phase，Py表示pyrchlore phase ................................................................................................ . 41 圖2-34 以sol-gel method製備過程中的示意圖 ...................................................... 43 圖2-35 spin coating四階段步驟 ................................................................................ 43 圖3-1 製備PLT precursor的流程圖 ......................................................................... 46 圖3-2 製備(1-x)PMN-xPT precursor的流程圖 ......................................................... 47 圖3-3 refluxing system儀器架設圖 .......................................................................... 48 圖3-4 製備PLT precursor、(1-x)PMN-xPT precursor和熱處理的流程圖 ............. 50 圖3-5 製備SEM試片示意圖。(a) 觀察表面結構，(b) 觀察橫截面結構 ........... 52 圖3-6 鐵電分析平台與薄膜試片連接線路的示意圖 .............................................. 55 圖3-7 電滯曲線激發信號圖 ...................................................................................... 55 圖3-8 介電性質分析架設系統之示意圖 .................................................................. 57 圖4-1 退火溫度為500 ℃的0.7PMN-0.3PT，在PLT seeding layer濃度不同情形下的電滯曲線圖。由於PLT濃度不足的情形下會有漏電流的現象產生。 ........... 59 圖4-2 有添加PVP之成分為0.7PMN-0.3PT薄膜在400 ℃、450 ℃和500 ℃退火後XRD分析比較 ...................................................................................................... 60 圖4-3 有無添加PVP之成分為0.7PMN-0.3PT薄膜在450 ℃和500 ℃退火後XRD分析比較 ............................................................................................................... 62 圖4-4 添加PVP改良的(1-x)PMN-xPT薄膜在500 ℃退火後之XRD分析比較 . 64 圖4-5 添加PVP改良的(1-x)PMN-xPT薄膜在450 ℃退火後之XRD分析比較 . 65 圖4-6 在退火溫度為500 ℃時，有無添加PVP之0.7PMN-0.3PT薄膜表面SEM微結構圖。(a) 無添加PVP改良，(b) 有添加PVP改良。 ..................................... 67 xv 圖4-7 在退火溫度為450 ℃時，有無添加PVP之0.7PMN-0.3PT薄膜表面SEM微結構圖。(a) 無添加PVP改良，(b) 有添加PVP改良。 ..................................... 68 圖4-8 退火溫度為500 ℃之(1-x)PMN-xPT薄膜(有添加PVP)表面SEM微結構圖。x = 0.1，(b) x = 0.3，(c) x = 0.45。 ...................................................................... 72 圖4-9 退火溫度為450 ℃之(1-x)PMN-xPT薄膜(有添加PVP)表面SEM微結構圖。x = 0.1，(b) x = 0.3，(c) x = 0.45。 ...................................................................... 73 圖4-10 退火溫度為450 ℃的0.55PMN-0.45PT (有添加PVP)之表面SEM微結構圖。(a) 持溫時間5分鐘，(b) 持溫時間10分鐘，(c) 持溫時間15分鐘 ............. 74 圖4-11 退火溫度為450 ℃的0.55PMN-0.45PT薄膜(有添加PVP)之表面SEM微結構圖。(a) 持溫時間20分鐘，(b) 持溫時間25分鐘，(c) 持溫時間30分鐘 ... 75 圖4-12 退火溫度為450 ℃的0.9PMN-0.1PT (有添加PVP)之表面SEM微結構圖。持溫時間5分鐘，(b) 持溫時間10分鐘，(c) 持溫時間15分鐘。 ....................... 76 圖4-13 有添加PVP改良的0.9PMN-0.1PT 薄膜在添加過量鎂的條件下之表面 SEM 微結構圖。(a) 退火溫度為500 ℃，(b) 退火溫度為450 ℃。 ........................................................................................................................................ 77 圖4-14 退火溫度為500 ℃之(1-x)PMN-xPT薄膜(有添加PVP)之SEM橫截面圖。x = 0.1，(b) x = 0.3，(c) x = 0.45。 .............................................................................. 78 圖4-15 退火溫度為450 ℃之(1-x)PMN-xPT薄膜(有添加PVP)SEM之橫截面圖。(a) x = 0.1，(b) x = 0.3，(c) x = 0.45。 ......................................................................... 79 圖4-16 退火溫度為500 ℃之同一試片的0.9PMN-0.1PT薄膜之不同點電極的電滯曲線圖。由圖可知0.9PMN-0.1PT薄膜因為多孔洞的顯微結構造成電滯曲線性質不穩定......................................................................................................................... 83 圖4-17 退火溫度為500 ℃之(1-x)PMN-xPT薄膜電滯曲線圖............................... 84 圖4-18 退火溫度為450 ℃之(1-x)PMN-xPT薄膜電滯曲線圖............................... 84 圖4-19 退火溫度450 ℃時0.55PMN-0.45PT薄膜之不同持溫時間的電滯曲線圖........................................................................................................................................ 85 xvi 圖4-20 退火溫度為500 ℃的(1-x)PMN-xPT薄膜在變溫系統下的介電分析。(a) 0.9PMN-0.1PT，(b) 0.7PMN-0.3PT，(c) 0.55PMN-0.45PT。 ................................... 88 圖4-21 退火溫度為450 ℃的(1-x)PMN-xPT薄膜在變溫系統下的介電分析。(a) 0.9PMN-0.1PT，(b) 0.7PMN-0.3PT，(c) 0.55PMN-0.45PT。 ................................... 89 圖4-22 純PVP360000粉末的DSC分析圖 ............................................................. 91 圖4-23 有無添加PVP 的0.7PMN-0.3PT薄膜在PLT/ITO/glass的TGA分析 .... 92 圖4-24 有無添加PVP 的0.7PMN-0.3PT 薄膜在PLT/ITO/glass 的DSC 分析。 ........................................................................................................................................ 92 圖4-25 基底為Pt(100)/Ti/SiO2/Si，在退火溫度為500 ℃下三種成分比例的 (1-x)PMN-xPT薄膜之XRD分析比較 ......................................................................... 94 圖4-26 基底為Pt(100)/Ti/SiO2/Si，在退火溫度為450 ℃下三種成分比例的(1-x)PMN-xPT薄膜之XRD分析比較 ......................................................................... 95 圖4-27 基底為Pt(100)/Ti/SiO2/Si，退火溫度為500 ℃之(1-x)PMN-xPT薄膜表面SEM微結構圖。(a) x = 0.1，(b) x = 0.3，(c) x = 0.45 ............................................... 98 圖4-28 基底為Pt(100)/Ti/SiO2/Si，退火溫度為450 ℃之(1-x)PMN-xPT薄膜表面SEM微結構圖。(a) x = 0.1，(b) x = 0.3，(c) x = 0.45 ............................................... 99 圖4-29 基底為Pt(100)/Ti/SiO2/Si，0.7PMN-0.3PT薄膜在450 ℃退火之表面SEM微結構圖....................................................................................................................... 100 圖4-30 基底為PLT/ITO/glass，0.7PMN-0.3PT薄膜在450 ℃退火之表面SEM微結構圖....................................................................................................................... 100 圖4-31 基底為Pt(100)/Ti/SiO2/Si，退火溫度為500 ℃之(1-x)PMN-xPT薄膜SEM橫截面圖。(a) x = 0.1，(b) x = 0.3，(c) x = 0.45 ...................................................... 101 圖4-32 基底為Pt(100)/Ti/SiO2/Si，退火溫度為450 ℃之(1-x)PMN-xPT薄膜SEM橫截面圖。(a) x = 0.1，(b) x = 0.3，(c) x = 0.45 ...................................................... 102 圖4-33 基底為Pt(100)/Ti/SiO2/Si，在退火溫度為500 ℃下的三種不同成分比例(1-x)PMN-xPT薄膜之電滯曲線圖 ............................................................................. 104 xvii 圖4-34 基底為Pt(100)/Ti/SiO2/Si，在退火溫度為450 ℃下的三種不同成分比例(1-x)PMN-xPT薄膜之電滯曲線圖 ............................................................................. 105 圖4-35 在退火溫度為500 ℃下的0.7PMN-0.3PT薄膜在Pt(100)/Ti/SiO2/Si基底及PLT/ITO/glass基底之電滯曲線圖 ......................................................................... 105 圖4-36 在退火溫度為450 ℃下的0.7PMN-0.3PT薄膜在Pt(100)/Ti/SiO2/Si基底及PLT/ITO/glass基底之電滯曲線圖 ......................................................................... 106 圖4-37 基底為Pt(100)/Ti/SiO2/Si，退火為500 ℃的(1-x)PMN-xPT薄膜在變溫系統下的介電分析。(a) x = 0.1，(b) x = 0.3，(c) x = 0.45 .......................................... 108 圖4-38 基底為Pt(100)/Ti/SiO2/Si，退火為450 ℃的(1-x)PMN-xPT薄膜在變溫系統下的介電分析。(a) x = 0.1，(b) x = 0.3，(c) x = 0.45 .......................................... 109 xviii 表目錄 表2-1 鐵電材料之重要歷史演進 ................................................................................ 5 表2-2 Randall等人整理前人先前所研究PZT系統中晶粒大小對於材料表現特性的影響......................................................................................................................... 13 表2-3 PZT陶瓷體對於晶粒大小變化的影響 .......................................................... 13 表2-4 transition enthalpy和transition entropy在normal ferroelectrics與relaxor ferroelectrics的比較 ...................................................................................................... 17 表2-5 PST和其他鐵電的transition enthalpy和transition entropy的比較 ............ 18 表2-6 normal ferroelectrics和relaxor ferroelectrics的表現特性 ............................ 20 表2-7 Relaxor-PbTiO3固溶系統的表現特性 ............................................................ 24 表2-8 Relaxor-PbTiO3固溶系統中的MPB區域表現特性 ..................................... 24 表2-9 各種成分比例之(1-x)PMN-xPT在未極化與極化之介電及壓電特性 ......... 39 表3-1 (1-x)PMN-xPT之不同成分比例的基本特性比較 ......................................... 44 表3-2 本實驗所使用之原料、純度、品牌、型號及國家名稱 .............................. 45 表3-3 ITO/glass基材之成分含量表 ......................................................................... 49 表3-4 X-ray繞射分析操作參數 ................................................................................ 51 表4-1 各個微量元素的含量分析，單位為mol ppm ............................................... 81 表4-2 (1-x)PMN-xPT薄膜在PLT/ITO/glass基底之dielectric constant最大值所對應到的Tmax分析 .......................................................................................................... 110 表4-3 (1-x)PMN-xPT薄膜在Pt(100)/Ti/SiO2/Si基底之dielectric constant最大值所對應到的Tmax分析 .................................................................................................. 110 | |
| dc.language.iso | zh-TW | |
| dc.subject | 溶膠-凝膠法 | zh_TW |
| dc.subject | 鈮鎂酸鉛-鈦酸鉛薄膜 | zh_TW |
| dc.subject | 鈣鈦礦相 | zh_TW |
| dc.subject | 焦綠石相 | zh_TW |
| dc.subject | 擴散式相變化 | zh_TW |
| dc.subject | 銦化錫導電玻璃 | zh_TW |
| dc.subject | 聚乙烯吡 | zh_TW |
| dc.subject | 咯烷酮 | zh_TW |
| dc.subject | ITO | en |
| dc.subject | Microstructure | en |
| dc.subject | PVP | en |
| dc.subject | Pyrochlore | en |
| dc.subject | Perovskite | en |
| dc.subject | Relaxor ferroelectrics | en |
| dc.subject | Thin film | en |
| dc.subject | PMN-PT | en |
| dc.title | 低溫製備鈮鎂酸鉛-鈦酸鉛薄膜之微結構、鐵電與介電性質比較 | zh_TW |
| dc.title | Property characterization of PMN-PT thin films prepared at low annealing temperature. | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 99-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 舒貽忠,段維新,郭錦龍 | |
| dc.subject.keyword | 鈮鎂酸鉛-鈦酸鉛薄膜,鈣鈦礦相,焦綠石相,擴散式相變化,銦化錫導電玻璃,聚乙烯吡,咯烷酮,溶膠-凝膠法, | zh_TW |
| dc.subject.keyword | PMN-PT,Thin film,Relaxor ferroelectrics,Perovskite,Pyrochlore,ITO,PVP,Microstructure, | en |
| dc.relation.page | 119 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2011-08-11 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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