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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/37037完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李允立(Yun-Li Li) | |
| dc.contributor.author | Min-Hsin Lo | en |
| dc.contributor.author | 羅閔馨 | zh_TW |
| dc.date.accessioned | 2021-06-13T15:18:13Z | - |
| dc.date.available | 2008-07-26 | |
| dc.date.copyright | 2008-07-26 | |
| dc.date.issued | 2008 | |
| dc.date.submitted | 2008-07-24 | |
| dc.identifier.citation | [1] H. Morkoc, S. Strite, G. B. Gao, M.E. Lin, B. Sverdlov, and M. Burns, “Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device” J. Appl. Phys. 76, 1363 (1994)
[2] E. Fred Schubert, “Light-Emitting Diodes” Cambridge (2006) [3] http://www.lamborghini.de/modelle/reventon/index.htm [4] 史光國, “現代半導體發光及雷射二極體材料技術” 全華科技圖書股份有限公司(2004) [5] 史光國, “半導體發光二極體及固態照明” 全華科技圖書股份有限公司 (2005) [6] S. Nakamura, “GaN growth using GaN buffer layer” Jpn. J. Appl. Phys. 30, L1705 (1991) [7] S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, “Thermal annealing effects on p-Type Mg-doped GaN films” Jpn. J. Appl. Phys. 31, L139 (1992) [8] S. Nakamura, T. Mukai, M. Senoh, “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes” Appl. Phys. Lett. 64, 1687 (1994) [9] S. Nakamura, M. Senoh,. N. Iwasa and S. Nagahama, “High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes” Appl. Phys. Lett. 67, 1868 (1995) [10] F. M. Steranka1), J. Bhat, D. Collins, L. Cook, M. G. Craford, R. Fletcher,N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames,G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller,R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman,S. Subramanya, T. Trottier, and J. J. Wierer, ”High Power LEDs – Technology Statusand Market Applications” Phys. Stat. Sol.(a), 194, 380 (2002) [11] I. Ozden, E. Makarona, and A. V. Nurmikko, ”A dual-wavelength indium gallium nitride quantum well light emitting diode” Appl. Phys. Lett. 79, 2532 (2001) [12] C. H. Chen, S. J. Chang, Y. K. Su, J.K. Sheu, J.F. Chen, C. H. Lin, Y. C. Kuo, “Nitride-based cascade near white light-emitting diodes” IEEE Photon Tech. Lett. 14, 908 (2002) [13] M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano and T. Mukai. “InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode” Jpn. J. Appl. Phys. 41, L246 (2002) [14] S. Nakamura & G. Fasal “The blue laser diodes” Springer, Berlin (1997) [15] T. Nishida, T. Ban and N. Kobayashi. “Quaternary AlInGaN multiple quantum well 368nm light-emitting diode” Appl. Phys. Lett. 82, 3817 (2003) [16] W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phy. Lett. 75, 1360 (1999) [17] Jacques I. Pankove, “Optical Processes in Semiconductors” Dover (2006) [18] G. Harbers, S. J. Bierhuizen, and M. R. Krames. “Performance of high power light emitting diodes in display illumination applications ”Journal of Display Technology, Vol. 3, No. 2 (2007) [19] D. A. Neamen, “Semiconductor physics and devices” (Mc Graw Hill, 2003) [20] Nasser Peyghambarian, Stephan W. Koch, Andre Mysyrowicz. “Introduction to semiconductor optics” (1993) [21] O. Ambacher, “Growth and applications of Group III-nitrides” J. Phys. D: Appl. Phys. 31 2653 (1998) [22] L. Liu and J.H. Edgar, “Substrates for gallium nitride epitaxy,” Materials Science and Engineering R, 37 p.61 (2002) [23] Xiao, “Introduction to semiconductor manufacturing technology,” Prentice Hall [24] D. W. Kim, C.H. Jeong, K. N. Kim, H. Y. Lee, H. S. Kim, Y. J. Sung and G. Y. Yeom, “High rate sapphire (Al2O3) etching in inductively coupled plasmas using axial external magnetic field,” Thin Solid Films, 435, 242-246 (2003) [25] C.H. Jeong, D.W. Kim, H.Y. Lee, H.S. Kim, Y.J. Sung and G.Y. Yeom, “Sapphire etching with BCl3/HBr/Ar plasma surface & coatings technology,”Surface and Coatings Technology, 171, 280-284 (2003) [26] A. Reisman, M. Berkenblit, J. Cuomo, and S. A. Chan, “Selected writings in crystallophysics and crystallography,” J. Electrochem. Soc. 118, 1653 (1971) [27] K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato and T. Taguchi. ”High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 40, L583 (2001) [28] F. Dwikusuma, D. Saulys, and T.F. Kuech, “Study on sapphire surface preparation for III-nitride heteroepitaxial growth by chemical treatments,” J. Electrochem. Soc. 149, G603 (2002) [29] 吳志凌, “圖案化藍寶石基板之濕式蝕刻”,國立台灣大學 光電所 碩士研究論文 (2007) [30] S. J. Kim, “Vertical electrode GaN-based light-emitting diode fabricated by selective wet etching technique” Jpn. J. Appl. Phys. 44, p.2921-2924 (2005) [31] J. Wang, L. W. Guo, H. Q. Jia, Y. Wang, Z. G. Xing, W. Li, H. Chen, and J. M. Zhou “Fabrication of patterned sapphire substrate by wet chemical etching for maskless lateral overgrowth of GaN,” J. Electrochem. Soc. 153, C182 (2006) [32] D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, and R. H. Horng, “Fabrication of pyramidal patterned sapphire substrates for high-efficiency InGaN-based light emitting diodes,” J. Electrochem. Soc. 153, G765 (2006) [33] Chang-Chi Pan, Chi-Hsun Hsieh, Chih-Wei Lin, and Jen-Inn Chyi “Light output improvement of InGaN ultraviolet light-emitting diodesby using wet-etched stripe-patterned sapphire substrates” J. Appl. Phys. 102, 084503 (2007) [34] W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75, 1360 (1999) [35] C. Youtsey, L. T. Romano, I. Adesida, ”Smooth n-type GaN surfaces by photoenhanced wet etching” Appl. Phys. Lett. 72, 5 (1998) | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/37037 | - |
| dc.description.abstract | 近年來，利用半導體材料製造紅、黃、綠光發光二極體(Light emitting diode, LED) 已經有很大的進展。目前，以氮化銦鎵/氮化鎵(InGaN/GaN)為主的材料成功製出藍光LED，配合螢光粉製造出白光LED，宣告了以白光LED為照明主流的時代即將來臨。然而，為了未來的照明上的應用，進一步提升LED的外部量子效率是非常重要的課題。
在本篇論文中，我們成功的利用濕式蝕刻技術來製作圖案化藍寶石基板(Patterned sapphire substrates, PSS)以及藍寶石基板之移除(Sapphire removal)。在製作圖案化藍寶石基板方面，我們使用H2SO4：H3PO4 = 3：1做為蝕刻溶液，製造出三種圖案化藍寶石基板，實驗的結果發現高度為1.3 微米的圓柱形圖案化藍寶石基板LED在操作電流為20 mA的情況下，發光強度較傳統平面藍寶石基板LED還高出49 %。 為了製造出垂直式發光二極體(Vertical-electrode LED)，在藍寶石基板之移除方面，不同於目前常用的雷射剝離技術(Laser lift-off)，我們使用交替式蝕刻法以H2SO4：H3PO4 = 5：1以及2：1做為蝕刻溶液來執行藍寶石基板之移除實驗，而此方法能達到對藍寶石基板與未摻雜氮化鎵(u-GaN)有最佳的選擇性，蝕刻的速率比值 (Rsapphire / Ru-GaN) 高達15。未來可以利用交替式蝕刻法實際執行藍寶石基板之移除以製作垂直式發光二極體。 | zh_TW |
| dc.description.abstract | Recently, wide-bandgap semiconductors have been attracting great interest for applications to optoelectronic devices such as light-emitting diodes (LEDs), for last few years, InGaN/GaN-based blue light-emitting diodes (LEDs) have been successfully fabricated and following comes the epochal of white light LED. However, for future illumination applications, it is very important topic to further enhance the external quantum efficiency of LED.
In this research, sapphire removal and patterned sapphire substrates (PSS) were fabricated utilizing wet chemical etching technology. A 3H2SO4：1H3PO4 volume mixture was used as the etchant to etch the sapphire substrates with 280 °C, and we obtain three different kinds of PSS LED. The experiment results indicate that 1.3 micron cylinder PSS LED has 49 % efficiency enhancement than conventional LED at 20 mA injection current. In order to fabricate vertical-electrode LED, unlike the common technology, laser lift-off, we tried the commutative etching method to do the sapphire removal experiments employing 5H2SO4：1H3PO4 and 2H2SO4：1H3PO4 as the etchant. The etching rate ratio (RSapphire / Ru-GaN) is achieved 15. We may fabricate vertical-electrode LED utilizing the commutative etching method to remove the sapphire substrates in the future. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T15:18:13Z (GMT). No. of bitstreams: 1 ntu-97-J95941004-1.pdf: 4351157 bytes, checksum: 2303dc5d17460e5408a03715f6aa7396 (MD5) Previous issue date: 2008 | en |
| dc.description.tableofcontents | 口試委員會審定書 I
致謝 II 中文摘要 III 英文摘要 IV 目錄 V 圖目錄 VIII 表目錄 XII 第一章 緒論 1 1.1 前言 1 1.2 發光二極體之發展 2 1.3 研究動機與論文架構 4 第二章 理論基礎與歷史文獻追溯 6 2.1 發光二極體之結構與發光原理 6 2.2 藍寶石基板概述 10 2.3 增進發光二極體光取出效率之方法 14 2.4 文獻資料回顧 16 第三章 圖案化藍寶石基板發光二極體之製作 23 3.1 前言 23 3.2 圖案化藍寶石基板之製作 23 3.2.1 實驗流程 23 3.2.2 圖案化藍寶石基板 25 3.2.3 圖案化藍寶石基板發光二極體之結構 27 3.3 成長於藍寶石基板上之氮化鎵線缺陷分析 28 3.3.1 週期性圓柱形圖案化藍寶石基板 28 3.3.2 週期性圓洞形圖案化藍寶石基板 33 3.4 結果與討論 37 第四章 濕式蝕刻用於藍寶石基板之移除 38 4.1 垂直式發光二極體 38 4.2 實驗架構與流程 40 4.3 藍寶石基板之移除 41 4.3.1 高速率蝕刻 41 4.3.2 270 °C低速率高選擇性蝕刻 42 4.3.3 280 °C低速率高選擇性蝕刻 47 4.4 交替式蝕刻法執行低速率高選擇性蝕刻 60 4.5 結果與討論 66 第五章 結論與未來展望 68 5.1 結論 68 5.2 未來展望 69 參考文獻 71 | |
| dc.language.iso | zh-TW | |
| dc.subject | 濕蝕刻、圖案化藍寶石基板、垂直式發光二極體、藍寶石基板移除 | zh_TW |
| dc.subject | Patterned sapphire substrate | en |
| dc.subject | Vertical-electrode LED | en |
| dc.subject | Wet etching | en |
| dc.subject | Sapphire removal. | en |
| dc.title | 濕式化學蝕刻技術用於氮化鎵發光二極體藍寶石基板移除與圖案化藍寶石基板之製作 | zh_TW |
| dc.title | Sapphire removal and patterned sapphire substrates fabrication on GaN light emitting diode utilizing wet chemical etching technology | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 96-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 張允崇(Yun-Chorng Chang),黃鼎偉(Ding-Wei Huang) | |
| dc.subject.keyword | 濕蝕刻、圖案化藍寶石基板、垂直式發光二極體、藍寶石基板移除, | zh_TW |
| dc.subject.keyword | Wet etching, Patterned sapphire substrate, Vertical-electrode LED, Sapphire removal., | en |
| dc.relation.page | 74 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2008-07-25 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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