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  1. NTU Theses and Dissertations Repository
  2. 電機資訊學院
  3. 光電工程學研究所
請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/36673
完整後設資料紀錄
DC 欄位值語言
dc.contributor.advisor楊志忠
dc.contributor.authorChe-Wei Huangen
dc.contributor.author黃哲偉zh_TW
dc.date.accessioned2021-06-13T08:10:30Z-
dc.date.available2016-07-27
dc.date.copyright2011-07-27
dc.date.issued2011
dc.date.submitted2011-07-20
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dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/36673-
dc.description.abstract為瞭解表面電漿子與量子井耦合以提升發光二極體效率之物理機制,我們首先在氮化銦鎵/氮化鎵量子井結構上,使用聚苯乙烯奈米球微影技術製作金和銀的金屬奈米顆粒。以此技術,我們可以有效控制金屬顆粒的大小和表面覆蓋率。本研究中我們選擇適當大小的聚苯乙烯奈米球,且適當的調整熱退火條件,可以製作出侷域表面電漿子共振波長與量子井發光波段吻合的銀奈米顆粒。經由銀奈米顆粒所產生的侷域表面電漿子與量子井的耦合,不僅加速了量子井中自由載子的發光結合速率,也增強量子井光致螢光的發光強度。經由此耦合的機制,我們也觀察到光致螢光的發光頻譜紅移與光致螢光的衰減時間縮短的現象。隨溫度變化的光致螢光量測結果也顯示量子井內部量子效率的增強效果。zh_TW
dc.description.abstractThe fabrications of Au and Ag nanoparticles (NPs) with controlled geometry and surface density on a GaN epitaxial structure containing InGaN/GaN quantum wells (QWs) based on polystyrene nanosphere (NS) lithography and the characterizations of their localized surface plasmon (LSP) coupling behaviors with the QWs are demonstrated. By using an appropriate polystyrene NS size and adjusting the post-fabrication thermal annealing condition, the induced LSP resonance wavelength of the fabricated Ag NPs on GaN can roughly match with the QW emission wavelength for generating coherent coupling between the radiating dipoles in the QWs and the induced LSP. The coupling leads to the enhancement of radiative recombination rate of free carriers in the QWs and results in increased photoluminescence (PL) intensity, PL red shift, and PL decay time reduction. Temperature-dependent PL measurement also shows the increase of QW emission internal quantum efficiency through the coupling mechanism.en
dc.description.provenanceMade available in DSpace on 2021-06-13T08:10:30Z (GMT). No. of bitstreams: 1
ntu-100-R97941022-1.pdf: 2727134 bytes, checksum: 70f598c1c0bb2887453f619866f793e2 (MD5)
Previous issue date: 2011
en
dc.description.tableofcontents中文摘要………………………………………………I
Abstract ……………………………………………II
Contents …………………………………………III
List of Figures …………………………………V
List of Tables …………………………………VII
Chapter 1 Introduction …………………………1
1.1 Nanosphere Lithography …………………………1
1.2 Surface Plasmons …………………………………2
1.2.1 Surface Plasmon Polariton (SPP) ……………3
1.2.2 Localized Surface Plasmon (LSP) ……………4
1.3 Research Motivations and Thesis Organization …………8
Chapter 2 Sample Preparation and LSP Resonance Behaviors …20
2.1 Sample Preparation Procedures …………………………………20
2.2 SEM Images of Metal Nano-particles on GaN Before and After
Thermal Annealing ……………………………………………22
2.3 Transmission Spectra of Metal Nano-particles on GaN Before and
After Thermal Annealing ………………………………………23
2.4 Simulation Results of Absorption Cross Section Spectra of Metal
Nano-particles on GaN …………………………………………24
Chapter 3 Surface Plasmon Coupling with Quantum Wells ………34
3.1 Wavelength-dependent Photoluminescence Results ……………34
3.2 Temperature-dependent Photoluminescence Results ……………36
3.3 Time-resolved Photoluminescence Results ………………………37
Chapter 4 Discussions …………………………………………………43
Chapter 5 Conclusions ……………………………………………48
References …………………………………………………………49
dc.language.isoen
dc.subject光致螢光zh_TW
dc.subject氮化銦鎵zh_TW
dc.subject金屬奈米顆粒zh_TW
dc.subject侷域表面電漿子zh_TW
dc.subject聚苯乙烯奈米球zh_TW
dc.subjectInGaNen
dc.subjectPhotoluminescenceen
dc.subjectPolystyrene nanosphereen
dc.subjectLocalized Surface Plasmonen
dc.subjectMetal nanoparticleen
dc.title量子井結構上製作金屬奈米顆粒
並研究所產生之表面電漿子與量子井耦合現象
zh_TW
dc.titleFabrication of Surface Metal Nanoparticles and Their Induced Surface Plasmon Coupling with Subsurface Quantum Wellsen
dc.typeThesis
dc.date.schoolyear99-2
dc.description.degree碩士
dc.contributor.oralexamcommittee張宏鈞,江衍偉
dc.subject.keyword氮化銦鎵,金屬奈米顆粒,侷域表面電漿子,聚苯乙烯奈米球,光致螢光,zh_TW
dc.subject.keywordInGaN,Metal nanoparticle,Localized Surface Plasmon,Polystyrene nanosphere,Photoluminescence,en
dc.relation.page56
dc.rights.note有償授權
dc.date.accepted2011-07-20
dc.contributor.author-college電機資訊學院zh_TW
dc.contributor.author-dept光電工程學研究所zh_TW
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