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  1. NTU Theses and Dissertations Repository
  2. 電機資訊學院
  3. 光電工程學研究所
請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/36638
完整後設資料紀錄
DC 欄位值語言
dc.contributor.advisor林清富(Ching-Fuh Lin)
dc.contributor.authorKuo-Jui Sunen
dc.contributor.author孫國瑞zh_TW
dc.date.accessioned2021-06-13T08:08:57Z-
dc.date.available2005-07-26
dc.date.copyright2005-07-26
dc.date.issued2005
dc.date.submitted2005-07-21
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[33] P.W. France, Optical Fiber Lasers and Amplifiers, Blackie, 1991.
[34] Christof Strohh&ouml;fer, Optical properties of ion beam modified waveguide materials doped with erbium and silver, Proefschrift Universiteit Utrecht, 2001.
[35] M.S. Bresler, O.B. Gusev, P.E. Pak, N.A. Sobolev, I.N. Yassievich, “New efficient mechanism of excitation of electroluminescence from erbium ions in crystalline silicon” Journal of Luminescence, 80, pp. 375-379, 1999.
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[52] Christof Strohhofer, Albert Polman, “Relationship between gain and Yb3+ concentration in Er3+–Yb3+ doped waveguide amplifiers” J. Appl. Phys., 90, pp. 4314-4320, 2001.
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dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/36638-
dc.description.abstractNanotechnology gives opportunity for many fields of engineering and optical communication provides the solution for huge quantity of data transmission nowadays. Accompanying the blooming research in nanotechnology and the demand of optical communication, a novel fabricating technique that utilizes nanoparticles to fabricate silicon-based optical communication device is introduced in this thesis. The structure of this device is a light emitting layer deposited on silicon substrate. The reason for choosing silicon as substrate is that silicon plays the leading role in modern integrated circuit (IC) industrial.
The luminescence wavelength of this emitting layer corresponds to 1530 nm, which is a very important band in optical communication system. The emitting layer is mainly composed of Er3+ ions and host glass. The source of Er3+ ions is Er2O3 nanoparticles. The host glass is formed with spin-on glass (SOG), which is widely used in semiconductor manufacturing. There are also co-dopants including P2O5, Al, Ag, Si, and Yb2O3 nanoparticles being doped in the emitting layer in order to modify the physical characteristics and to improve light emission efficiency. The influences of these co-dopants are investigated. For the purpose of optical activation of Er3+ ions and other chemical reactions in the emitting layer, thermal processes are essential in the fabricating process. The heat treatment parameters are investigated too. Finally, observations of the optical gain exhibited in the emitting layer are given.
Compared with ion implantation, solid phase epitaxy, and other techniques, our fabricating technique is simple and of low cost. This fabricating technique is a promising work and worth developing in the future.
en
dc.description.provenanceMade available in DSpace on 2021-06-13T08:08:57Z (GMT). No. of bitstreams: 1
ntu-94-R92941021-1.pdf: 1373127 bytes, checksum: 61a041e56d5b8bb0bf5df8478663632e (MD5)
Previous issue date: 2005
en
dc.description.tableofcontentsChapter 1 Introduction
1-1 Motivation 1
1-2 Outline 8
Chapter 2 The Basic Theory and Experiments
2-1 Introduction 9
2-2 The Surface Effect of Nanoparticles 10
2-3 Er3+ Physics, Characteristics, and General Background 12
2-4 The Manufacturing Process 15
2-5 The Measurement Setup 17
2-6 Conclusion 20
Chapter 3 The Influence of Composition
3-1 Introduction 21
3-2 Spin-on Glass Mixed with Er2O3 Only 22
3-3 The Influence of P2O5 Nanoparticles 25
3-4 The Influence of Al Nanoparticles 29
3-5 The Influence of Ag Nanoparticles 32
3-6 The Influence of Si Nanoparticles 38
3-7 The Influence of Yb2O3 Nanoparticles 42
3-8 Conclusion 49
3-A Descriptions, Specifications and Vendors of Materials 51
Used in the Emitting Layer

Chapter 4 Thermal Processes and Thickness of Emitting Layer
4-1 Introduction 55
4-2 The Heating Condition in the Furnace 56
4-3 High Energy 248 nm Deep Ultraviolet Laser Annealing 60
4-4 Rapid Thermal Annealing 67
4-5 The Effect of the Thickness of Emitting Layer 68
4-6 Conclusion 72
Chapter 5 Optical Gain
5-1 Introduction 73
5-2 Reviews of Planar Erbium-doped Optical Gain Devices 74
5-3 Measurement Setup - Variable Stripe Length Method 77
5-4 Non-linear Variation of 1530 nm Signal 80
5-5 Gain Coefficient 83
5-6 Conclusion 90
5-A More Detail about Variable Stripe Length Method 90
Chapter 6 Summary and Perspective
6-1 Summary 93
6-2 Perspective 96
References 98
dc.language.isoen
dc.subject稀土元素zh_TW
dc.subject光增益zh_TW
dc.subject光通訊zh_TW
dc.subject奈米科技zh_TW
dc.subject旋塗玻璃zh_TW
dc.subject氧化鉺zh_TW
dc.subject矽zh_TW
dc.subjectrare earth compoundsen
dc.subjectspin-on glassen
dc.subjectsiliconen
dc.subjectnanotechnologyen
dc.subjectoptical communicationen
dc.subjectoptical pumpingen
dc.subjectoptical gainen
dc.title使用奈米粒子製作矽基摻鉺光通訊元件zh_TW
dc.titleFabrication of Erbium-doped Silicon-based Optical Communication Device Using Nanoparticlesen
dc.typeThesis
dc.date.schoolyear93-2
dc.description.degree碩士
dc.contributor.oralexamcommittee吳靜雄,林唯芳,何旻真
dc.subject.keyword奈米科技,光通訊,稀土元素,氧化鉺,光增益,矽,旋塗玻璃,zh_TW
dc.subject.keywordnanotechnology,optical communication,optical pumping,rare earth compounds,optical gain,silicon,spin-on glass,en
dc.relation.page102
dc.rights.note有償授權
dc.date.accepted2005-07-21
dc.contributor.author-college電機資訊學院zh_TW
dc.contributor.author-dept光電工程學研究所zh_TW
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