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標題: | 微帶線到波導管之Q和V頻段轉接設計 Transition Design for Microstrip Line to Waveguide on Q-Band and V-Band |
作者: | Tsung-Hsun Yang 楊宗勳 |
指導教授: | 吳瑞北 |
關鍵字: | 低溫共燒陶瓷,微帶線,轉接器,波導管, LTCC,microstrip line,transition,waveguide, |
出版年 : | 2005 |
學位: | 碩士 |
摘要: | 本論文詳盡探討兩種在不同頻帶中的微帶線轉平面波導之轉接結構: 第一種: 利用漸變開槽天線做媒介來傳播的Q 頻段轉接器。第二種: 利用LTCC 製程來設計的V 頻段轉接器。
第一種轉接器是以漸變開槽天線做為媒介來傳播的Q 頻段轉接 器,整個轉接電路結構可以分成三個部份來看。利用其轉接結構單純化,微小化的考量,於平面電路至波導管的轉接採用了漸變開槽天線,在波導管的短邊E plane處最大電場處插入使達成良好的場型轉換;再加上平行式的天線尾端可以增加天線的方向性,減少天線向後輻射。其單一轉接以整個Q頻段來說,有超過50 % 的頻寬。後來實際以背對背轉接製作的方式來驗證模擬結果,可以看到模擬和量測趨勢接近。 第二種轉接是利用LTCC 製程來設計的V 頻段轉接器,轉接電 路結構也可以分成三個部份來看。其信號走向為:微帶線饋入後往下 經過一個連通柱饋入帶狀線中,再經由耦合至基板合成波導。此轉接設計是利用LTCC 製程製作,所以可以立體化垂直設計,即可達成寬頻的轉接設計。最後觀察模擬結果在59-62GHz中,反射損耗皆有在15dB 以上,由於介質的損耗正切稍大,所以導致約2dB 的介質損耗。未來可以採用介質損耗更小的製程上來作為改進之處。 In this thesis, two transitions from microstrip line to waveguide on Q-band and V-band are presented respectively. One traditional transition between microstrip line and rectangular waveguide is based on the concept of the tapered slot probe antenna and a tri-section transformation on Q-band. With broadband performance and compact size, the antenna is inserted into the E-plane of the end launcher of the waveguide. As the result, one single transition exhibits over 50% bandwidth on Q-band (40-50GHz) for -15dB return loss and approximately 0dB insertion loss in 44-50GHz. Also a back-to-back transition is fabricated to verify the accuracy of the simulation. Good agreement is observed from the comparison between the simulation and measurement results. The other transition is an open-circuited type V-band transition between microstrip line and substrate integrated waveguide (SIW) fabricated on a low temperature co-fire ceramic (LTCC) substrate. The energy is coupled to the waveguide through a via probe from the feeding microstrip line. The stripline pad to the via probe is introduced to improve the transition performance. The structure height of 176-μm which equals 0.073 guided wavelength is very short in the microwave system. One single LTCC transition exhibits 10% bandwidth (58-64GHz in center frequency 60.5GHz) for -15dB return loss and 2dB insertion loss in center frequency. It is found that the relatively high insertion loss of 2dB is mainly attributed to the dielectric loss and can be reduced by adopting low loss tangent material. Numerical results are presented to verify the design idea. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/36341 |
全文授權: | 有償授權 |
顯示於系所單位: | 電信工程學研究所 |
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