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標題: | 氮化矽奈米遮罩成長法形成之氮化銦鎵量子點之光學特性 Optical Properties of InGaN Quantum Dots Grown on SiNx Nano Masks |
作者: | Liang-Liang Huang 黃亮喨 |
指導教授: | 陳永芳 |
關鍵字: | 氮化鎵,氮化銦鎵,量子點,氮化矽,奈米遮罩, GaN,InGaN,Quantum dots,SiNx,Nano mask, |
出版年 : | 2005 |
學位: | 碩士 |
摘要: | Abstract
In this thesis we report a detailed study on the structural and optical properties of InGaN/GaN quantum dots. Quite interesting results have been obtained from our studies which should be very useful for our understanding and application of these materials. I. Effect of SiNx Nano Mask on Optical Properties of InGaN Quantum Dots Optical properties of InGaN quantum dots have been investigated by photoluminescence and photoluminescence exaltation measurements. We report a high efficiency of radiative recombination in ultra-high-density InGaN quantum dots due to quantum confinement effects. The photoluminescence spectra of InGaN quantum dots containing several fine structures are attributed to different families of quantum dots sizes. Also, we point out that the piezoelectric effects do not play a significant role in our samples. In addition, we can clearly identify the emission from InGaN quantum dots and GaN defect in photoluminescence excitation experiments. II. Dependence of Optical Properties of InGaN Quantum Dots on Duration Time of SiNx Nano Mask Photoluminescence and photoluminescence exaltation measurements have been employed to study dependence of optical properties in InGaN quantum dots on duration time of SiNx nano mask. We report that the average height of the quantum dots increases with the SiNx treatment time. The wavelength of photoluminescence emission change with different quantum dots sizes due to quantum confinement effects. The exciton binding energy of InGaN quantum dots shows that it decreases with increasing QD size as one should expect. We point out a possibility to fabricate full color high-brightness light emitting diodes based on InGaN quantum dots by controlling duration time of SiNx treatment. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/36334 |
全文授權: | 有償授權 |
顯示於系所單位: | 物理學系 |
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