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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 張培仁 | |
dc.contributor.author | Chi-Ming Fang | en |
dc.contributor.author | 方啟銘 | zh_TW |
dc.date.accessioned | 2021-06-13T07:50:06Z | - |
dc.date.available | 2007-08-01 | |
dc.date.copyright | 2005-07-29 | |
dc.date.issued | 2005 | |
dc.date.submitted | 2005-07-25 | |
dc.identifier.citation | 1. K. M. Lakin, Thin Film Resonator Technology, IEEE International Frequency Control Symposium and PDA Exhibition Jointly with the 17th European Frequency and time Forum, pp 765-778, 2003
2. T.C. Lee et al., ”Receiver Architectures in Modern Wireless Communication,” Electrical Engineering/GIEE, National Taiwan Universtiy, pp. 3-6, 2005. 3. S. K. Reynolds et al., ”A direct-conversion receiver IC for WCDMA mobile systems,” IEEE Journal of Solid-state Circuits, Vol. 38, No. 9, pp 1555-1560, 2003. 4. K. M. Lakin and J. S. Wang, 'Acoustic bulk wave composite resonators,' Applied Physics Letters, vol. 38, pp. 125-127, 1981. 5. C. Vale, J. Rosenbaum, S. Horwitz, S. Krishnaswamy and R. Moore, “FBAR Filters at GHZ Frequencies,” Proc. Forty-Fourth Annual Symposium on Frequency Control, pp. 332-336, 1990. 6. D. Cushman, K.F. Lau, E.M. Garber, K.A. Mai, A.K. Oki and K.W. Kobayashi, “SBAR filter monolithically integrated with HBT amplifier, Ultrasonics Symposium,” IEEE, pp. 519 -524, 1990. 7. W. C. Dunn, H. M. Liaw, L. Ristic and R. M. Roop, Monolithic Circuit with integrated bulk structure resonator, U.S. Patent # 5260596, 1993. 8. C. Vale, J. Rosenbaum, S. Horwitz, S. Krishnaswamy and R. Moore, “FBAR Filters at GHZ Frequencies,” Proc. Forty-Fourth Annual Symposium on Frequency Control, pp. 332-336, 1990. 9. R. C. Ruby and P. P. Merchant, “Tunable thin film acoustic resonators and method for making the same,” U.S. Patent # 5587620, 1996. 10. R. C. Ruby, “Post-Fabrication Tuning of Acoustic Resonators,” U.S. Patent #5780713, 1998. 11. R. C. Ruby and P.P. Merchant , “Method of making tunable thin film acoustic resonator,” U.S. Patent #5873153, 1999. 12. P. D. Bradley, J. D. Lason and R. C. Ruby, “Duplexer Incorporating Thin Film Bulk Acoustic Resonators,” U.S. Patent #6262637, 2001. 13. T. Nishihara, T. Yokoyama, T. Miyashita and Y. Satoh, High Performance and Miniature Thin Film Bulk Acoustic Wave Filters for 5 GHz, IEEE Ultrasonics Symposium, pp. 969-972, 2002. 14. B. P. Otis et al.,”A 300μW 1.9GHz CMOS Oscillator Utilizing Micromachined Resonators,” IEEE Journal of Solid-state Circuits, VOL. 38, NO. 7, pp. 1271-1274, 2003 15. L. Elbrecht, R. Aigner and C. I. Lin and H. J. Timme, “Integration of Bulk Acoustic Wave Filters: Concepts and Trends,” IEEE MTT-S Digest, pp. 395-398, 2004. 16. H. Yu, W. Pang, H. Zhang and E. S. Kim, “Film Bulk Acoustic Resonator at 4.4 GHz with Ultra Low Temperature Coefficient of Resonant Frequency,” IEEE MEMS2005, pp. 28-31, 2005 17. M. Al. Dubois, C. Billard et al., “Integration of High-Q BAW Resonators and Filters Above IC,” Proc. ISSCC 2005, pp. 293-393 and p. 606, 2005. 18. J. F. Carpentier et al.,”A SiGe:C BiCMOS WCDMA Zero-IF RF Front-End Using an Above-IC BAW Filter “,Proc. ISSCC 2005, pp. 394-395, 2005. 19. W. Pang, H. Zhang et al., “High Q Film Bulk Acoustic Resonator from 2.4 to 5.1GHz,” Proc. IEEE MEMS 2004, pp. 805-808, 2004. 20. H. Zhang and E. S. Kim, “Air-Backed Al/ZnO/Al Film Bulk Acoustic Resonator Without Any Support Layer,” Proc. IEEE International Frequency Control Symposium and PDA Exhibition, pp. 20-26, 2002. 21. M. Yim, D. H. Kim, D. Chai and G. Yoon, “Significant Resonance Characteristic Improvements by Combined Use of Thermal Annealing and Co Electrode in ZnO-based FBARs,” IEEE Electronics Letters, pp. 1628-1640, 2003. 22. D. Royer, E. Dieulesaint, Elastic Wave in SolidsⅠ, pp. 69-88, Springer, 1999. 23. 汪建民,鄭世裕等,陶瓷技術手冊(上) Ceramic Technology Handbook,全華科技圖書股份有限公司,pp. 443-444,1999 24. D. Royer, E. Dieulesaint, Elastic Wave in SolidsⅠ, Springer, pp. 119-166, 1999. 25. J. F. Rosenbaum, Bulk Acoustic Wave Theory and Device, Artech House, Inc., pp. 167-183, 1988. 26. D. Royer, E. Dieulesaint, Elastic Wave in SolidsⅡ, Springer, pp. 10-14, 1999. 27. D. Royer, E. Dieulesaint, Elastic Wave in SolidsⅡ, Springer, pp. 46-47 , 1999 28. 陳培元,“薄膜體型聲波諧振腔與濾波器研究”,2003年台灣石英晶體產業協會會員大會暨高頻壓電元件技術與應用研討會, 2003. 29. 袁杰,高頻電路分析與設計(一),全威圖書有限公司,pp.72-80,民國90年5月。 30. D. M. Pozar, Microwave Engineering, Second Edition, John Wiley&Sons. Inc., pp. 300-302, 1998. 31. D. M. Pozar, Microwave Engineering, Second Edition, John Wiley&Sons. Inc., pp. 303-305, 1998. 32. S. Sherrit, H. D. Wiedericky and B. K. Mukherjeey and M. Sayerz, 'An accurate equivalent circuit for the unloaded piezoelectric vibrator in the thickness mode,' J. Phys. D: Appl. Phys., vol. 30, pp. 2354-2363, 1997. 33. J. D. Larson, P. D. Bradley, S. Waretenberg,and R. C. Ruby, “Modified Butterworth-Van Dyke circuit for FBAR resonators and automated measurement system,” Proceedings of the IEEE 2000 Ultrasonics Symposium, pp. 863-868, 2000. 34. L.P. Huelsman, Active and Passive Analog Filter Design, pp. 29-67, McGraw Hill, Inc., 1993 35. R. Schaumann, Design of Analog Filters, pp. 569-599, Oxford University Press, Inc. , 2001. 36. R. Schaumann, Design of Analog Filters, p. 260, Oxford University Press, Inc., 2001. 37. 陳培元,“薄膜體型聲波帶通濾波器設計”,中山科學研究院材料暨光電研究所。 38. D. M. Pozar, Microwave Engineering, Second Edition, John Wiley&Sons. Inc., p. 251, 1998. 39. D. M. Pozar, Microwave Engineering, Second Edition, John Wiley&Sons. Inc., p. 252, 1998. 40. D. M. Pozar, Microwave Engineering, Second Edition, John Wiley&Sons. Inc., pp. 606-611, 1998. 41. B. Razavi, Design of Analog CMOS Integrated Circuits, McGraw Hill, Inc., pp. 201-317, 2001. 42. B. Razavi, RF Microelectronics, Prentice Hall, Inc., pp. 14-22, 1998. 43. D. K. Shaeffer and T. H. Lee et al, “A 1.5-V, 1.5-GHz CMOS Low Noise Amplifier”, IEEE Journal of Solid-State Circuits , vol.32 , No.5, pp.745 -759, May 1997. 44. W. Guo et al., “ The Noise and Linearity Optimization for A 1.96-GHz CMOS Low Noise Amplifier,” 2002 3rd International Conference on Microwave and Millimeter Wave Technology Proceedings, 2002 . 45. M. K. Raja, et al, “ A Fully Integrated Variable Gain 5.75-GHz LNA with on chip Active Balun for WLAN,” IEEE Radio Frequency Integrated Circuits Symposium, 2003. 46. S. Smith, Microelectronic Circuit, Oxford University Press, Inc., fifth edition, pp.578-582, 2004. 47. B. Razavi, RF Microelectronics, Prentice Hall, Inc., pp. 170-173, 1998. 48. J. L. Ny, B. Thudi et al.,”A 1.9 GHz Low Noise Amplifier,” EECS 522 Analog Integrated Circuits Project, Winter 2002. 49. K. M. Lakin, “The Film Bulk Acoustic Wave Resonator and Filter Technology,” TFR Technologies, Inc., p. 3, 2001. 50 J. F. Rosenbaum, Bulk Acoustic Wave Theory and Device, Artech House, Inc., pp. 451-458, 1988. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/36035 | - |
dc.description.abstract | 隨著無線通訊的發展,通訊相關元件扮演了相當重要的角色。而將兼具高頻特性與高 Q值的被動元件和積體電路整合,更是未來通訊發展之趨勢。本研究係為薄膜體聲波濾波器與積體電路整合技術之研究,主要研究內容為薄膜體聲波濾波器與低雜訊放大器整合之設計、模擬與製程及結果之分析,簡而言之,將膜體聲波濾波器與低雜訊放大器整合成單一晶片為本研究之首要任務。
晶片佈局配置中,訊號輸入至薄膜體聲波濾波器部分,由薄膜體聲波濾波器輸出端輸入低雜訊放大器,由低雜訊放大器輸出。薄膜體聲波濾波器,其結構主要是由多個薄膜體聲波共振器所組成,而共振器的個數、面積大小及配置則根據所需的濾波器特性做選擇。低雜訊放大器為前端射頻通訊電路不可或缺的元件之一,主要工作是將由通過濾波器之訊號作放大的動作,並避免雜訊被放大影響到訊號,以得到足夠強度的訊號。研究製程方面,低雜訊放大器係利用國家晶片系統設計中心之CMOS標準製程設計並下線,主要使用聯電0.18μm製程製作;而薄膜體聲波濾波器結構乃利用後製程方式完成,以整合於低雜訊放大器之電路中,設計中使用CMOS製程最上層金屬作為薄膜體聲波濾波器之結構懸浮空腔區域。 本研究所提出之方法,將可使體聲波濾波器濾波器與低雜訊放大器自一開始模擬單一平台整合設計到最後後製程可與CMOS標準製程整合,對主被動元件整合、加速系統設計、減少整合測試程序等均有重大幫助。在目前研究成果中,證實了FBAW filter 與LNA整合在單一晶片是可行的,其中最主要貢獻包含成功建立了一套能與CMOS標準製程整合的微機電製程,在整個後製程中完成後,CMOS製程電路並不會被破壞,對未來進行微機電元件與電路之整合,從設計到最後量測可作為一個實質上參考之依據。其次將薄膜體聲波元件和電路模擬架構在單一模擬平台上,自模擬分析設計能有一個整合性的設計,並對整合晶片的成功設計與量測有一個初步的結果。以此研究為基礎,可擴展將薄膜體聲波濾波器與其他積體電路元件整合成單一晶片,將對於未來射頻通訊元件之應用、無線及感測系統單晶片化以及系統單晶片(SOC)的整合亦具有重要的影響及貢獻。 | zh_TW |
dc.description.abstract | With the rapid growth of communication market, system on chip (SOC) is a tendency of integration. However, passive devices are hard to be integrated owing to the natural loss of mechanism on Silicon. Film bulk acoustic wave filter (FBAW filter) has the potential to enable the fabrication of high quality filters integrated with RF CMOS circuit. In RF circuit, low noise amplifier (LNA) is an important component for amplifying the signal passed form RF band pass filter. So, the first destination of this project is to integrated FBAW filter with LNA by CMOS compatible process.
The present inventions comprise the integrating technique of film bulk acoustic wave filter and RF circuit. The film bulk acoustic filter is composed of some film bulk acoustic wave resonator and the characteristic of film bulk acoustic wave filter is depended on the number and area size of film bulk acoustic wave resonators. The film bulk acoustic wave resonator can be realized by CMOS compatible post process by the use of the top electrode metal layer of CMOS standard process as definition area of etching cavity or bottom electrode of film bulk acoustic wave resonator. By this method, the CMOS compatible film bulk acoustic wave resonator can be integrated with RF circuit for communication application. In the achievement, prove that the monolithic integration of film bulk acoustic wave filters with low noise amplifiers is feasible. The most contribution that set up the fabrication-process compatible CMOS standard process of the FBAW filters, and the circuit is not hurt in the post process. Second, set up the integrated simulating Platform of the FBAW Filters and RF circuit, and Finish the design and Simulation of monolithic integration chip of film bulk acoustic wave filters with low noise amplifiers. | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T07:50:06Z (GMT). No. of bitstreams: 1 ntu-94-R92543023-1.pdf: 3857785 bytes, checksum: c938a2797a7e4dc214b492a965cd5d03 (MD5) Previous issue date: 2005 | en |
dc.description.tableofcontents | 中文摘要 i
Abstract iii 謝 誌 iv 目 錄 vi 圖目錄 ix 表目錄 xiii 第1章 導論 1 1.1 研究動機 1 1.1.1 薄膜體聲波濾波器之優點 1 1.1.2 低雜訊放大器之重要性 2 1.1.3 研究內容對於系統單晶片化發展之貢獻 2 1.2 文獻回顧與探討 4 1.3 論文架構 7 第2章 薄膜體聲波濾波器之理論與設計 13 2.1 壓電效應及壓電材料之本構方程式 14 2.2 聲波之波動方程 15 2.2.1 未具壓電特性材料之一維波動方程 16 2.2.2 壓電材料之一維波動方程 17 2.2.3 壓電耦合係數與機電耦合係數之定義 19 2.3 單層結構之一維阻抗分析 20 2.3.1 一維彈性平板之阻抗矩陣及Mason等效電路 20 2.3.2 一維壓電平板之阻抗矩陣及Mason等效電路 23 2.4 使用Mason等效電路分析體聲波壓電薄膜共振器之特性 26 2.5 集總元件共振電路及等效電路模型 29 2.5.1 品質係數(Q值) 29 2.5.2 串聯共振 29 2.5.3 並聯共振 30 2.5.4 Mason等效電路模型 30 2.5.5 使用MBVD等效電路模型去推估阻抗方程式之參數 31 2.6 薄膜體體聲波濾波器之理論分析 34 2.6.1 階梯式濾波器之設計方法 34 2.6.2 應用階梯式濾波器方法作為薄膜體體聲波濾波器之設計 35 2.7 薄膜體體聲波濾波器之架構與設計流程 38 第3章 低雜訊放大器設計分析 41 3.1 低雜訊放大器之簡介 41 3.2 阻抗匹配(Impedance Matching) 42 3.3 增益(Gain) 43 3.4 雜訊(Noise) 45 3.4.1 雜訊之統計特徵及雜訊頻譜 46 3.4.2 雜訊指數(noise figure) 46 3.4.3 雜訊溫度 49 3.4.4 接受器中雜訊指數與靈敏度之關係 49 3.4.5 雜訊的種類 51 3.4.5.1 熱雜訊(thermal noise) 51 3.4.5.2 散粒雜訊(shot noise) 53 3.4.5.3 閃爍雜訊(flicker noise) 54 3.5 非線性效應 56 3.5.1 諧波失真(harmonic distortion) 56 3.5.2 1-dB增益壓縮點(gain compression) 57 3.5.3 交互調變失真(intermodulation distortion) 58 3.6 低雜訊放大器設計考量指標 60 3.7 低雜訊放大器電路架構(topology)及設計流程 63 第4章 適用PCS系統規格之元件參數設計及模擬結果 68 4.1 系統規格介紹及設計標準及平台選用 68 4.2 利用ADS軟體建立FBAR及FBAW Filter特性模擬平台 69 4.3 利用ADS平台建立低雜訊放大器等效電路模擬模型 72 4.4 薄膜體聲波共振器元件調變特性之模擬 73 4.5 整合晶片中薄膜體聲波濾波器部分設計之模擬結果 77 4.6 整合晶片中低雜訊放大器電路部分設計之模擬結果 79 4.7 薄膜體聲波濾波器與低雜訊放大電路整合晶片模擬結果 83 4.8 設計值列表並與通訊規範之比較 87 第5章 晶片製作 89 5.1 低雜訊放大器之製作 89 5.2 薄膜體聲波濾波器製程簡介 91 5.2.1 定義犧牲層之區域 91 5.2.2 成長下電極 95 5.2.3 成長壓電薄膜 98 5.2.4 成長上電極 101 5.2.5 成長調變電極薄膜 102 5.2.6 淘空犧牲層(Metal 6),結構懸浮 104 第6章 實驗分析與量測結果 106 6.1 實驗分析 106 6.2 量測結果與分析 110 第7章 目前成果與未來工作 118 7.1 目前成果 118 7.1.1 設計及模擬整合成果 118 7.1.2 製程整合成果 118 7.1.3 量測工作成果 119 7.2 未來工作 120 參考文獻 121 附錄A 壓電材料係數127 附錄B 彈性材料係數131 | |
dc.language.iso | zh-TW | |
dc.title | 薄膜體聲波濾波器與低雜訊放大器單晶片整合技術之研究 | zh_TW |
dc.title | Study on the Monolithic Integration of Film Bulk Acoustic Wave Filters with Low Noise Amplifiers | en |
dc.type | Thesis | |
dc.date.schoolyear | 93-2 | |
dc.description.degree | 碩士 | |
dc.contributor.coadvisor | 陳培元 | |
dc.contributor.oralexamcommittee | 楊燿州,黃榮山,姚志民 | |
dc.subject.keyword | 薄膜體聲波共振器,薄膜體聲波濾波器,低雜訊放大器,微機電,積體電路,射頻元件,系統單晶片化, | zh_TW |
dc.subject.keyword | Film Bulk Acoustic Wave Resonator,FBAR,Film Bulk Acoustic Wave Filter,FBAW Filter,Low Noise Amplifier,LNA,CMOS,SoC, | en |
dc.relation.page | 131 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2005-07-26 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 應用力學研究所 | zh_TW |
顯示於系所單位: | 應用力學研究所 |
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