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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/34827
標題: | 超寬頻超低電壓低雜訊放大器 An Ultra-Low Voltage Ultra-wideband Low Noise Amplifier |
作者: | Yueh-Hua Yu 游岳華 |
指導教授: | 陳怡然(Yi-Jan Emery Chen) |
關鍵字: | 低雜訊放大器,超低電壓,低功率,分散式放大器,超寬頻, CMOS,LNA,ultra-low voltage,low power,distributed amplifier,UWB, |
出版年 : | 2006 |
學位: | 碩士 |
摘要: | 本論文探討以UMC 0.18um 1P6M CMOS製程來研製利用於超寬頻的超低電壓寬頻低雜訊放大器,利用分散式放大器的架構和源極電感的觀念使低雜訊放大器可以達到寬頻並且低雜訊的功能,單極共源極放大器串接於傳統的分散式放大器用來改善高頻的增益,低雜訊放大器可藉由適當地調整源極電感以及適當的選取元件的大小與偏壓以達到良好的低雜訊效能。低雜訊放大器的增益可達到10dB的增益,3dB頻寬從2.7GHz ~ 9.1GHz,輸入與輸出反射係數在3dB頻寬內皆小於-10dB,平均雜訊指數為4.65dB,在6GHz時 IIP3為0 dBm,CMOS超寬頻低雜訊放大器在0.6V的偏壓下,功率消耗為7mW。 This thesis presents an ultra-low voltage low noise amplifier for ultra-wide band application in UMC 0.18um 1P6M CMOS technology. Using the architecture of distributed amplifier with the inductive source degeneration, the LNA is demonstrated to achieve broadband and low noise. The common-source single-stage amplifier is cascaded to the conventional distributed amplifier to improve the gain at high frequency. Excellent noise performance of LNA is obtained by applying suitable source degeneration inductance and selecting proper device geometry and bias. The measured gain of the fully-integrated LNA is 10dB with the 3dB bandwidth from 2.7 to 9.1 GHz. The input and output return-losses are more than 10dB within the 3dB-band. The average noise figure is 4.65dB. The measured IIP3 at 6GHz is 0dBm. Operated at 0.6V, the UWB CMOS LNA consumes 7mW. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/34827 |
全文授權: | 有償授權 |
顯示於系所單位: | 電子工程學研究所 |
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ntu-95-1.pdf 目前未授權公開取用 | 6.58 MB | Adobe PDF |
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