請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/34801完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 楊燿州 | |
| dc.contributor.author | Wen-Cheng Kuo | en |
| dc.contributor.author | 郭文正 | zh_TW |
| dc.date.accessioned | 2021-06-13T06:34:52Z | - |
| dc.date.available | 2008-01-26 | |
| dc.date.copyright | 2006-01-26 | |
| dc.date.issued | 2006 | |
| dc.date.submitted | 2006-01-17 | |
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Technical Reference TR-NWT-001221, Generic Requirements for Fiber Optic Switches, Issue 1, Jan. 1994, Bellcore. 53. 王宏瑜,”光開關自動對位與封裝測試之研究”, 國立台灣大學機械工程研究所碩士論文, 2005. 54. M. Chabloz, Y. Sakai, T. Matsuura, and K. Tsutsumi, “Improvement of side wall roughness in deep silicon etching”, Microsystem Technologies, Vol. 6, 2000, pp. 86-89. 55. R. Legtenberg, A. W. Groeneveld, and M. Elwenspoek, “Comb-drive actuators for large displacements”, Journal of Micromechanics and Microengineering, Vol. 6, 1996, pp. 320-329. 56. J. Li, Q. X. Zhang and A. Q. Liu, “Advanced fiber switches using deep RIE (DRIE) fabrication”, Sensors and Actuators A, Vol. 102, 2003, pp. 286-295. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/34801 | - |
| dc.description.abstract | 本研究之目的在於開發單層與雙層結構厚度之高深寬比懸浮微結構製程，並應用在微機電推動光纖式光開關。在單層結構厚度之高深寬比懸浮微結構製程開發上，針對理想之高深寬比懸浮製程之條件，綜合各種懸浮製程之優點，在小開口面積之前題下，提出一種單一光罩、單次乾蝕刻加工、使用光阻做為遮罩、不受結構深度限制之SRM製程。目前所能提供之製程能力可以製作120μm厚、最大溝槽深寬比達28：1之懸浮微結構。在大開口面積之前題下，利用改良式SRM製程，在加強微溝槽效應下，可以製作結構厚度為100μm，最大溝槽深寬比達20：1之懸浮微結構。除SOI製程外，為目前擁有最大結構厚度與溝槽最大深寬比製程能力之設計。在雙層結構厚度之高深寬比懸浮微結構製程開發上，本研究亦針對SOI與單晶矽兩種基材，並針對製程中可能發生之問題，提供完整的平台架構與解決方案。
在製作1X2與1x4微機電推動光纖式光開關方面，首先針對光通訊市場與光開關種類，進行初步了解；在設計方面，首先根據產品之性能需求訂定產品規格，接著依功能之要求決定最佳之驅動模式；然後利用商用輔助軟體進行細部設計以決定結構之主要元件時，同時依此需求配合已開發之製程平台，製作出1X2與1X4微機電移動光纖式光開關。在1X2光開關方面，最佳之插入損失為0.9dB；在1X4光開關方面，最佳之插入損失為5.6dB。 | zh_TW |
| dc.description.abstract | This work is devoted to the development the processes for single or double layers device of high-aspect-ratio suspended structures and the application for MEMS optical fiber-to-fiber optical switches. In the development of single layer high-aspect-ratio suspended structures, we proposed the single-run single-mask process for the small opening of high-aspect-ratio suspended structures. The maximum device thickness is 120μm and maximum trench aspect ratio is 28:1. Except for SOI process, SRM process can offer the best manufacturing capacity. For larger opening of high-aspect-ratio suspended structures, by enhancing the microtrenching effect, we modified the SRM process and achieved the maximum device thickness of 100μm and maximum trench aspect ratio of 20:1. Besides, we also study the SOI and non-SOI processes for two layer thickness of high-aspect-ratio suspended structures, offering the total solution for manufacturing.
In the design and fabrication of MEMS optical fiber switches, we proposed the optimized dimensions for various type of optical switches by the simulation of Coventorware. By using the proposed two layer thicknesses of SOI manufacturing technology, we can fabricate 1X2 and 1X4 optical fiber-to-fiber switches. The optimized insertion loss is 0.9dB for 1X2 type and 5.6dB for 1X4 type. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T06:34:52Z (GMT). No. of bitstreams: 1 ntu-95-D90522004-1.pdf: 10593628 bytes, checksum: 811f7de0b9c86b64d506fcf4b0e7970a (MD5) Previous issue date: 2006 | en |
| dc.description.tableofcontents | 摘要 I
Abstract II 總目錄 III 圖目錄 VI 表目錄 X 第一章 緒論 1 1.1 前言 1 1.2 結構懸浮製程之種類與文獻回顧 5 1.2.1 SCREAM製程 5 1.2.2 SOI製程 9 1.2.3 BSM製程 12 1.2.4 SBM製程 14 1.2.5 DWP製程 17 1.2.6 BELST製程 19 1.2.7 AIM製程 22 1.2.8 APTI製程 24 1.2.9 各懸浮製程之比較 28 1.3 理想之高深寬比懸浮製程之條件與現有製程比較 30 1.4 新製程於微機電推動光纖式光開關之應用 31 1.5 微機電推動光纖式光開關之研發 31 1.6 本論文之架構 32 第二章 理想之單層高深寬比懸浮微結構之開發 33 2.1 製程開發之可行性分析 33 2.2 小開口面積下之理想製程之開發 34 2.2.1 小開口面積之SRM製程 34 2.2.2 三明治電性絕緣法介紹 36 2.2.3 SRM製程各步驟之參數研究 38 2.2.4 利用SRM製程製作之元件展示 46 2.3 大開口面積下之理想製程之開發 47 2.3.1 大開口面積之懸浮結構製作困難點 47 2.3.2 改良式SRM製程流程圖 49 2.3.3 微溝槽效應的探討與運用 50 2.3.4 利用改良式SRM製程製作之元件 54 2.3.5 導電層製作 60 2.3.6 研究成果 61 第三章 雙層高深寬比懸浮微結構之製程開發 64 3.1 市場需求與完全解決方案之提出 64 3.2 非SOI製程之雙層高深寬比懸浮微結構製程開發 65 3.3 SOI製程之雙層高深寬比懸浮微結構製程開發 72 第四章 光開關之種類與需求 80 4.1 光通訊市場概況 80 4.2 光開關之種類與文獻回顧 85 4.2.1 熱光式光開關 85 4.2.2 全像式光開關 87 4.2.3 液晶式光開關 88 4.2.4 氣泡式開關 90 4.2.5 傳統機械式光開關 91 4.2.6 微機電式光開關 96 4.3 光開關規格需求 103 4.4 光纖耦合的損失原因 106 4.4.1 內部因素 106 4.4.2 外部因素 107 4.4.3 系統因素 111 4.4.4 光纖耦合時之幾何需求 112 4.5 新型微機電推動光纖式光開關之設計要求 112 第五章 微機電推動光纖式光開關設計與製作之研究 114 5.1 研究方法 114 5.2 進行步驟 116 5.2.1 大位移致動器之種類選定 116 5.2.2 承載平台與致動器之深寬比選定 118 5.2.3 定址機構設計 118 5.2.4 致動機構理論分析與參數設計 119 5.2.5 選用符合要求之製程 121 5.2.6 光開關元件組裝與固定 122 5.2.7 量測與性能測試及理論實驗功能性比較驗證 123 第六章 微機電1X2推動光纖式光開關 124 6.1 光開關機構說明與設計 124 6.2 模型建立與分析 128 6.3 製造流程 131 6.4 製程中重要因素 137 6.5 光開關實際成品與外觀 137 6.6 實驗系統架構 139 6.7 量測結果與討論 140 第七章 微機電1X4推動光纖式光開關 145 7.1 光開關機構說明與設計 145 7.2 模型建立與分析 154 7.3 製造流程 156 7.3.1 外徑50 之光纖製作 156 7.3.2 光開關本體結構製作與組裝 158 7.4 製程中重要因素 159 7.5 光開關實際成品與外觀 159 7.6 實驗量測系統架構 166 7.7 量測結果與討論 168 第八章 總論與展望 174 8.1 總論 174 8.2 展望 176 參考文獻 178 論文著作 186 | |
| dc.language.iso | zh-TW | |
| dc.subject | 光纖切換 | zh_TW |
| dc.subject | SOI晶圓 | zh_TW |
| dc.subject | 折疊式撓性機構 | zh_TW |
| dc.subject | 擋塊 | zh_TW |
| dc.subject | 感應耦合電漿蝕刻 | zh_TW |
| dc.subject | 高深寬比結構 | zh_TW |
| dc.subject | 結構懸浮製程 | zh_TW |
| dc.subject | 梳狀致動器 | zh_TW |
| dc.subject | optical switching | en |
| dc.subject | comb drive | en |
| dc.subject | stopper | en |
| dc.subject | folded beams | en |
| dc.subject | SOI wafer | en |
| dc.subject | inductively coupled plasma etching | en |
| dc.subject | high-aspect-ratio structure | en |
| dc.subject | structure releasing | en |
| dc.title | 高深寬比懸浮微結構之製程開發及在微機電式光開關的應用 | zh_TW |
| dc.title | The Process Development of Suspended High-Aspect-Ratio Micro-Structures and the Application for MEMS Optical Fiber-to-Fiber Switches | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 94-1 | |
| dc.description.degree | 博士 | |
| dc.contributor.oralexamcommittee | 范光照,楊申語,鍾添東,楊啟榮 | |
| dc.subject.keyword | 感應耦合電漿蝕刻,高深寬比結構,結構懸浮製程,光纖切換,梳狀致動器,擋塊,折疊式撓性機構,SOI晶圓, | zh_TW |
| dc.subject.keyword | inductively coupled plasma etching,high-aspect-ratio structure,structure releasing,optical switching,comb drive,stopper,folded beams,SOI wafer, | en |
| dc.relation.page | 187 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2006-01-18 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 機械工程學研究所 | zh_TW |
| 顯示於系所單位： | 機械工程學系 | |
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