請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/34649
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林清富 | |
dc.contributor.author | Yau-Te Huang | en |
dc.contributor.author | 黃耀德 | zh_TW |
dc.date.accessioned | 2021-06-13T06:20:22Z | - |
dc.date.available | 2006-02-06 | |
dc.date.copyright | 2006-02-06 | |
dc.date.issued | 2006 | |
dc.date.submitted | 2006-01-25 | |
dc.identifier.citation | 第一章
[1]V.A Karpina, et al.,Cryst. Res. Technol.39,980-99(2004). [2]Y.Chen,D.M.Bagnall, H.Koh,K.Park,Z.Zhu,T. Yao,J. Appl. Phys.84,3912(1998). [3]Bixia Lin and Zhuxi Fu, Yunbo Jia, Appl.Phys.Lett.79 (2001). [4]W.S.Hu,Z.G.Liu,R.X.Wu,Y.–F.Chen,W.Ji,T.Yu and D. Feng, Appl,Phys. Lett.,71,548(1997). [5]Z.L.Pei,C.Sun,M.H.Tan,J.Q.Xiao,D.H.Guan,R.F.Huang,and L.S.Wen,J.Appl.Phys.90,3432(2001). [6]C.Agashe, O. Kluth,a) J. Hu¨pkes, U. Zastrow, and B. Rech, J. Appl. Phys. 95, 1911(2004). [7]C.C. Lin,C.S. Hsiao, S.Y. Chen and S.Y. Cheng, J. Electrochem.Soc,vol.151,282(2004). [8]J.Wang,G.Du,Y.Zhang,B.Zhao,X.Yang and D.Liu,J.Crystal Growth,vol.163,269(2004). [9]C. W. Bunn, Proc. Phys. Soc. London 47,835(1935). [10]R. B. Heller,J.McGannon,and A. H. Weber, J. Appl. Phys. 21, 1283(1950). [11]G. P Mohatny and L. V. Azaroff. J. Chem. Phys. 35 1268 (1961). [12]T. Mitsuyu, S. Ono, and K. Wasa, J. Appl. Phys. 51, 2464 (1980). [13]T. Yamamoto, T. Shiosaki, and A. Kawabata, J. Appl. Phys. 51, 3113(1980). [14]A. Hachigo, H. Nakahata, K. Higaki, S. Fujii, and S. Shikata, Appl. Phys.Lett. 65, 2556 (1994). [15]Won Taeg Lim, Chamg Hyo Lee, Thin Solid Films 353, 12- 15 (1999). [16]P. Fons, K. Iwata, S. Niki, A. Yamada, and K. Matsubara, J. Cryst.Growth 201–202, 627 (1999). [17]蘇俊聰,“利用快速脈衝雷射蒸鍍法成長氧化鋅薄膜”,國立台 灣大學物理學研究所碩士論文(93). [18]F. K. Shan, G. X. Liu, W. J. Lee, G. H. Lee, I. S. Kim, and B. C. Shin, Appl.Phys.Lett.86,221910(2005). [19]E. M. Kaidashev, M. Lorenz, H. von Wenckstern, A. Rahm, H.-C. Semmelhack,K.-H. Han, G. Benndorf, C. Bundesmann, H. Hochmuth, and M. Grundmann, Appl. Phys. Lett. 82, 3901 (2003). [20]T. Nagata, A. Ashida, N. Fujimura, and T. Ito,J. Appl. Phys.95,3923(2004). [21]Sang Yeol Lee et al., Thin Solid Films 473, 31(2005). [22]Sang-Hun Jeong,Bong-Soo Kim, and Byung-Teak Lee, Appl. Phys. Lett. 82, 2625(2003). [23]S.J. Chen, Y.C. Liu, J. Y. Zhang, Y.M. Lu, D.Z. Shen and X.W. Fan, J.Phys.:Condens.Matter 15, 1975(2003). [24]D.M.Bangnall, Y.F.Chen, Z.Zhu,T.Yao, S.Koyama, M.Y.Shen and T.Goto, Appl.Phys.Lett.70,2230(1997). [25]H. Cao, Y. G. Zhao, H. C. Ong, S. T. Ho, J. Y. Dai, J. Y. Wu, and R. P. H.Chang, Appl. Phys. Lett. 73, 3656 (1998). [26]H. Cao, Y. G. Zhao, S. T. Ho, E. W. Seelig, Q. H. Wang, and R. P. H.Chang, Phys. Rev. Lett. 82, 2278 (1999). [27]Xinqiang Wang et al., J. Crystal Growth 243,13(2002). [28]Xiao-Ping Shen, Ai-Hua Yuan, Ye-Min Hu, Yuan Jiang, Zheng Xu,and Zheng Hu, Institute of Physics Publishing Nanotechology 16,2039(2005). [29]C.X. Xu, X. W. Sun, X. H. Zhang, L. Ke,S. J. Chua, Institute of Phys. Publishing Nanotechnology 15, 856 (2004). [30]M. Yan, H.T Zhang et al., J. Appl. Phys.94, 5240 (2003). [31]Haoquan Yan, Rongrui He, Justin Johnson, Matthew Law, Richard J. Saykally, and Peidong Yang, J.AM.CHEM.SOC. 125,4728(2003). [32]Yanfeng Zhang and Richard E. Russo,Appl.Phys.87,43106 (2005). [33]Hannes Kind, Haoquan Yan, Benjamin Messer, Mathew Law and Peidong Yang, Adv. Mater.,vol.14, 158(2002). [34]Y.B. Li et al, Appl. Phys. Lett.84, 3603(2004). [35]Kyoung-Lool Lim, Jae-Hooh Song, Hyung-Jin Jung, and Won-kook Choi.J. Appls. Phys.87,3573(2000). [36]J.-Jen Wu and S.-Chang Liu,J. Phys.Chem.106,9546 (2002). [37]Y.W. Heo, V. Varadarajan, M. Kaufman, K. Kim and D.P. Norton, Appl. Phys. Lett.81,3046(2002). [38]X.P. Gao et al. Chem. Commun.,1428(2004). [39]S. Yamabi and H. Imai, J. Mater. Chem.12,3773(2002). [40]Sophie Peulon and Daniel Lincot, J.Electrochem. Soc., vol.145,No.3(1998). [41]B.P. Zhang et al.,Appl. Phys. Lett.84,4098(2004). 第二章 [1]Z.Zhou,H.Deng,J.Yi,S.Liu,Matter.Res.Bull.34(1999)1563. [2]Y.J. Li ,R. Duan , P.B Shi, G.G.Quin ,Journal of Crystal Growth 260, 309-315(2004). [3]W.J.Li,”Growth mechanism and growth habit of oxide crystals”,Journal of Crystal Growth,203,186(1999). [4]L.Spanhel,M.A.Anderson,J.Am.Chem.Soc.113,2826(1991). [5]P.Hoyer,H.Weller,J.Phys.Chem.99,14096(1995). [6]G.Redmond,A.Okeefe,C.Burgess,C.MacHale and D. Fitzm aurice,J.Phys.Chem.97,11081(1993). [7]S.W. Kim, S. Fujita, and S. Fujita, Appl. Phys. Lett. 81, 5036 (2002). [8]D. Li, Y. H. Leung, A. B. Djurisic, Z. T. Liu, M. H. Xie, S. L. Shi, S. J.Xu, and W. K. Chan, Appl. Phys. Lett. 85, 1601(2004). [9]I. Shalish, H. Temkin, and V. Narayanamurti, Phys. Rev. B 69, 245401(2004). [10]Y. Harada and S. Hashimoto, Phys. Rev. B 68, 045421 (2003). [11]L. E. Greene, M. Law, J. Goldberger, F. Kim, J. C. Johnson, Y. Zhang, R.J. Saykally, and P. Yang, Angew. Chem., Int. Ed. 42, 3031 (2003). [12]K. Vanheusden,a) W. L. Warren, C. H. Seager, D. R. Tallant, and J. A. Voigt, J. Appl. Phys.,vol.79, 7983- 7990(1996). [13]Anderson Janotti and Chris G. Van Walle, Appl. Phys. Lett. vol.87,122102(2005). [14]Bixia Lin, Zhuxi Fu, Yunbo Jia, Appl. Phys. Lett. 79, 943(2001). 第三章 [1]S.A. Studenikin et al., J. Lumin.91,223(2000). [2]K. Vanheusden, W. L. Warren,C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys.79, 7983(1996). [3]F. H. Leiter, H. R. Alves, A. Hofstaetter, D. M. Hoffmann, and B. K.Meyer, Phys. Status Solidi B 226, R4 (2001). [4]F. H. Leiter, H. R. Alves, N. G. Romanov, D. M. Hoffmann, and B. K.Meyer, Physica B 340–342, 201(2003). [5]B.D.Cullity and S.R.Stock,“Elements of X-ray diffraction”,Appendix3. [6]M. Chen, X. Wang, Y.H. Yu, Z.L Pei, X.D. Bai, C.Sun, R.F. Huang, L.S. Wen, Appl. Surf. Sci.158, 134(2000). [7]Yuantao Zhang et al., J. Crystal Growth 252, 180(2003). [8]Hong Seong Kang et al., J. Appl. Phys.95,1246(2004). [9]A. Van Dijken,E.A. Meulenkamp, D. Vanmaekelbergh, A. Meijerink, J. Lumin.87-89,454-456(2000). [10]G.H. Schoenmakers et al., J.Phys. Chem.100,3215(1996). 第四章 [1]Hong Seong Kang, Jeong Seok Kang, Jae Won Kim, and Sang Yeol Lee, J.Appl.Phys.95,1246(2004). [2]K.-K. Kim, H.-S. Kim, D.-K. Hwang, J.-H. Lim, and S. J. Park,Appl.Phys. Lett. 83, 63 (2003). [3]B.M Ataev,Ya. I. Alivov, V.A. Nikitenko, M.V. Chuki chev.Journal of optoelctronics and Advanced Materials,vol.5,No.4, 899-902(2003). [4]Kirill A. Bulashevich et.al.,Appl.Phys.Lett.87,243502 (2005). [5]J.W.DONG, A.OSINSKY, B.HERTOG, J.Elec. Mater., vol. 34, 416(2005). [6]Y. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, and B. M.Ataev, Appl. Phys. Lett. 83, 2943 (2003). [7]A. E. Tsurkan, N. D. Fedotova, L. V. Kicherman, and P. G. Pas’ko, Semiconductors 6, 1183(1975). [8]H. Hosono, H. Ohta, K. Hayashi, M. Orita, and M. Hirano, J. Cryst. Growth 237–239, 496 (2001). [9]I. T. Drapak, Semiconductors 2, 624 (1968). [10]Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A.K. Omaev, M. V. Chukichev, and D. M. Bagnall, Appl. Phys. Lett. 83, 4719 (2003). [11]A. Osinsky, J. W. Dong, M. Z. Kauser, B. Hertog, A. M. Dabiran, P. P.Chow, S. J. Pearton, O. Lopatiuk, and L. Chernyak, Appl. Phys. Lett. 85, 4272 (2004). [12]Atsushi Tsukazaki, Masashi Kubota, Akira Ohtomo, Takeyoshi Onuma. J. Appl. Phys.44,643(2005). [13]R. Kolnenkamp, R.C. Word,and M. Golinez,Nano Letters, vol.5,No.10(2005). [14]J. Pyun, K. Matyjaszewski, Chem. Mater. 13,3436 (2001). [15]李國彥,“雙區塊共聚物活性聚合及側鏈螢光材料合成與發光元 件製作”,國立台北科技大學,page.3(92) [16]Y.Park, V.-E. Choong,and B.R. Hsieh, C.W Tang, and Y. Gao,Phys Rev. Lett.78,3955(1997). [17]V.Bulovic, S.R. Forrest, P. Burrows,and D.Z. Garbuzov,U.S. Pat.6,046,543(2000). 第五章 [1]H.Kawazoe,M.Tasukawa, H.Hyodo, M.Kurita,H.Yanagi,and H. Hosono, Nature(London)389,939(1997). [2]Y.R. Ryu, W.J.Kim, H.W. White, J.Crystal Growth 219,419 (2000). | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/34649 | - |
dc.description.abstract | 本論文的研究主要可分為兩個部分,第一部分為氧化鋅奈米粒子光激發光的研究,我們將氧化鋅奈米粒子沉積於矽基板上,藉由控制高溫退火的條件,來增強氧化鋅光激發光的強度。30nm與5nm的氧化鋅奈米粒子在800℃~900℃的溫度下且Ar流量為100sccm,於大氣壓力下退火70~80min,可獲得較強的光激發光強度。且退火後,5nm的氧化鋅奈米粒子的粒徑可達到600nm。接著改變O2的流量,發現其對於氧化鋅光激發光的增強效果有限。此外發現將30nm的氧化鋅奈米粒子沉積於Si(100),在900℃之下退火20min後,會成長出具有(201)面的優先取向(preferred orientation)的氧化鋅,若沉積於Si(110)上,則會有助於成長出(102)面優先取向的氧化鋅。第二部分為氧化鋅電激發光元件的製作,我們以PMMA混合ZnO作為發光層,發現以ITO/ZnO+ PMMA/Al的結構在順向偏壓下,可發出藍紫光。加入電洞傳輸層TPD後,製作ITO/TPD/ZnO+ PMMA/Al的結構可使元件的藍紫光較均勻。以PVK作為電洞傳輸層,製作ITO/PVK+ZnO+PMMA/Al的結構,元件會同時發出藍光與紫光。另外使用低功函數的Ca來作為陰極材料,製作ITO/ZnO+PMMA/Ca/Al或ITO/TPD+PMMA/ZnO+PMMA/Ca/Al等結構,可增加發光的時間以及元件的壽命,不過由於壽命仍然很短,導致無法量到其頻譜。 | zh_TW |
dc.description.abstract | The research in this paper can be separated two parts. First, photoluminescence intensity of zinc oxide nanoparti-cles can be enhanced and the quality of zinc oxide can be improved by controlling thermal annealing process condition.We deposite zinc oxide nanoparticles on silicon substrate,and it is annealed in high temperature furnace.After zinc oxide nanoparticles are annealed at 800℃ for 70~80min in the atmosphere,the stronger PL intensity can be obtained.When zinc oxide nanoparticles was deposited on Si(100) and it is annealed at 900℃ for 20min in the ambient with the ratio O2/Ar=0.3, the zinc oxide nanoparticle films with preferred (201) orientation can be grown.If zinc oxide nanopartilces was deposited on Si(110),it will contribute to the growth of the film with preferred (102) orientation.Second,zinc oxide nanoparti- cles is used to fabricate electroluminescence devices.We use the mixture of ZnO and PMMA as emission layer.The device can emit violet light for ITO/ZnO+PMMA/Al struc- ture.The hole transport material TPD is used to fabricate the device of ITO/TPD /ZnO+PMMA/Al structure.The device can emit violet light uniformly in the emission area.If we use PVK as hole transport layer,the stronger intensity of blue and violet light can be emitted from the device of ITO/PVK+ZnO+PMMA structure.The metal Ca is used as cathode material to fabricate the device of ITO/ZnO +PMMA/Ca/Al structure or ITO/TPD+PMMA/ZnO+PMMA/Ca/Al structure.It can increase the time of emission and device lifetime. | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T06:20:22Z (GMT). No. of bitstreams: 1 ntu-95-R92943042-1.pdf: 2569379 bytes, checksum: 5f398c301af4b1919ecd87034481a300 (MD5) Previous issue date: 2006 | en |
dc.description.tableofcontents | 第一章 引言 1
1.1 研究動機 1 1.2 氧化鋅材料的簡介 3 1.3 文獻導覽 6 參考文獻 15 第二章 氧化鋅奈米粒子樣品的製作 21 2.1 簡介 21 2.2 樣品的製作與流程 25 2.3 儀器的架設 28 參考文獻 32 第三章 實驗結果與分析 35 3.1 退火條件對氧化鋅奈米粒子的影響 35 3.1.1 退火溫度的影響 35 3.1.2 退火時間的影響 45 3.1.3 Ar與O2的流量比的影響 50 3.1.4 矽基板對氧化鋅結晶的影響 53 3.1.5 ESCA的量測結果 58 3.1.6 90nm氧化鋅奈米粒子之PL量測結果 61 3.2 結論 65 參考文獻 66 第四章 氧化鋅奈米粒子電激發光元件的製作 67 4.1 簡介 67 4.2 實驗方法與流程 74 4.3 實驗量測與結果 79 4.4 討論 93 4.5 結論 94 參考文獻 95 第五章 總結 97 5.1 論文回顧 97 5.2 未來展望 99 參考文獻 101 | |
dc.language.iso | zh-TW | |
dc.title | 氧化鋅奈米粒子光激發光之研究與電激發光元件的製作 | zh_TW |
dc.title | Photoluminescence study of ZnO nanoparticles and Fabrication of electroluminescence device using ZnO nanoparticles | en |
dc.type | Thesis | |
dc.date.schoolyear | 94-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 呂學士,管傑雄 | |
dc.subject.keyword | 氧化鋅奈米粒子,光激發光,電激發光, | zh_TW |
dc.subject.keyword | ZnO nanoparticles,photoluminescence,electroluminescence, | en |
dc.relation.page | 101 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2006-01-25 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-95-1.pdf 目前未授權公開取用 | 2.51 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。