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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳永芳 | |
dc.contributor.author | Yu-Hsiu Huang | en |
dc.contributor.author | 黃裕修 | zh_TW |
dc.date.accessioned | 2021-06-13T05:49:45Z | - |
dc.date.available | 2007-07-12 | |
dc.date.copyright | 2006-07-12 | |
dc.date.issued | 2006 | |
dc.date.submitted | 2006-07-06 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/33948 | - |
dc.description.abstract | 本論文探討三塊不同銦含量的氮化銦鎵合金半導體之光學與結構上的研究,其中主要集中在對於成份濃度調變時,造成樣品的吸引光譜和幅射光譜間存在著史托克位移(Stokes shift)效應的主要成因。
我們在掃瞄式電子顯微鏡、陰極射線螢光光譜、能量散佈性光譜、和光致螢光光譜的實驗中發現,樣品的能隙會隨著銦成份的不同改變,其發光波段可由紫外光跨越可見光全波段到紅外光,展現出氮化銦鎵優異的發光能力,在光電元件上有著傑出的運用與發展潛力。 綜合實驗結果和許多文獻資料,我們可了解樣品的史托克位移(Stokes shift)效應和濃度調變間的關聯性,並建立其產生的機制是由於樣品製成過程中,難以避免的成份不均勻和相分離現象。 | zh_TW |
dc.description.abstract | In this thesis we report a detailed study on the structural and optical properties of InGaN alloys. Quite interesting results have been obtained from our studies which would be very useful for our understanding and application of these materials. Our investigation is concentrated on the origin of Stokes shift in InxGa1-xN alloys with 0≦x≦1. The fundamental band gaps of InGaN alloys, depending on the indium concentration, can cover from near-ultraviolet to infrared, as a result this alloy system is capable of generating many optoelectronic devices. Based on the absorption and luminescence spectra, it clearly shows that there exists a large Stokes shift in InGaN alloys. Our experimental results together with the previous reports lead to a complete picture of the Stokes shift covering 0≦x≦1. Combining with the measurements of scanning electron microscope, cathodoluminescence, energy dispersive spectroscopy, and photoluminescence, we establish that the origin of the Stokes shift in InGaN ternary compound arises from alloy composition fluctuations. | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T05:49:45Z (GMT). No. of bitstreams: 1 ntu-95-R93222051-1.pdf: 1309629 bytes, checksum: 4ecf27651516253c8a00a9e00e6b3ea7 (MD5) Previous issue date: 2006 | en |
dc.description.tableofcontents | 1.Introduction………………………………………………………1
2.Theoretical background…………………………………………4 2.1 Photoluminescence (PL)………………………………………4 2.1.1Introduction ………………………………………………4 2.1.2 Recombination processes……………………….………7 2.1.3 Photoluminescence apparatus…………………………10 2.2 Photoluminescence excitation (PLE)…………….………13 2.3 Scanning Eectron Microscopy (SEM)………………………16 2.4 Energy Dispersive X-ray (EDX) Analysis……………….23 2.5 Cathodoluminescence scanning electron microscopy (CL)…………………………………………………….…………………24 2.6 InGaN alloys……………………………………………….…28 2.7 Quantum confinement effect……………………………….29 3. The origin of Stokes Shift in InxGa1-xN alloys with 0≦x≦1...................................................33 3.1 Introduction………………………………………………….33 3.2 Sample and Experiment………………………………………35 3.3 Results and discussion…………………………………….40 3.3.1 Investigation of band gap in InGaN alloys….…40 3.3.2 Temperature dependence of photoluminescence spectra…………………………….……………………46 3.3.3 Direct evidence of phase separation in InGaN alloys……………………………………………………51 4.Conclusion……………………………………………………….62 | |
dc.language.iso | en | |
dc.title | 成份調變之氮化銦鎵合金半導體光學與結構性質研究 | zh_TW |
dc.title | Correlation between optical and structural properties of InxGa1-xN alloys with 1≦x≦2 | en |
dc.type | Thesis | |
dc.date.schoolyear | 94-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 張顏暉,林泰源,沈志霖 | |
dc.subject.keyword | 氮化銦鎵,成份不均勻,相分離, | zh_TW |
dc.subject.keyword | InGaNl,Stokes shift,In-rich, | en |
dc.relation.page | 63 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2006-07-07 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 物理研究所 | zh_TW |
顯示於系所單位: | 物理學系 |
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