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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林清富 | |
dc.contributor.author | Eih-Zhe Liang | en |
dc.contributor.author | 梁奕智 | zh_TW |
dc.date.accessioned | 2021-06-13T05:44:02Z | - |
dc.date.issued | 2006 | |
dc.date.submitted | 2006-07-14 | |
dc.identifier.citation | [1.1] Y. Carts-Powell, “Silicon photonics moves toward practical use,” Laser Focus World 41,
pp. 55-57, (2005). [1.2] G.T. Reed, “The optical age of silicon,” Nature 427, pp. 595-596 (2004). [1.3] M. Salib, M. Morse, M. Paniccia, “Opportunities and integration challenges for CMOS-compatible silicon photonic and optoelectronic devices,” First IEEE International Conference on Group IV Photonics, pp. 1-3 (2004). [1.4] M. Jutzi, M. Grozing, E. Gaugler, W. Mazioschek, M. Berroth, “2-Gb/s CMOS optical integrated receiver with a spatially modulated photodetector,” IEEE Photonics Technology Letters 17, pp.1268 (2005). [1.5] W. Bogaerts, R. Baets, P. Dumon, V. Wiaux, S. Beckx, D. Taillaert, B. Luyssaert, J. Van Camperhout, P. Bienstman, D. Van Thourhout, “Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology,” Journal of Lightwave Technology 23, pp. 401-412 (2005). [1.6] T.K. Liang, and H.K. Tsang, “Integrated polarization beam splitter in high index contrast silicon-on-insulator waveguides,” IEEE Photonics Technology Letters 17, pp. 393-395 (2005). [1.7] “Light emission from silicon, Progress towards Si-based Optoelectronics : proceedings of Symposium B on Light Emission from Silicon,” edited by J. Linnros, F. Priolo, and L. 21 Canham, New York, Elsevier (1999). [1.8] A. Loni, A.J. Simons, P.D. Calcott, L.T. Canham, “Electroluminescent porous silicon device with an external quantum efficiency greater than 0.1% under CW operation,” Electronics Letters 31, pp. 1288-1289 (1995). [1.9] C. F. Lin, P.F. Chung, and M.J. Chen, and W.F. Su “Nanoparticle-modified metal–oxide–silicon structure enhancing silicon band-edge electroluminescence to near-lasing action” Optics Letters 27, 713 (2002). [1.10] W. L. Ng, M. A. Lourenco, R. M. Gwilliam, S. Ledain, G. Shao, K. P. Homewood, “An efficient room-temperature silicon-based light-emitting diode” Nature 410, 192 (2001). [1.11] M. A. Green, J. Zhao, A. Wang, P. J. Reece, M. Gal, “Efficient silicon light-emitting diodes” Nature 412, 805 (2001). [1.12] C. W. Liu, M. H. Lee, M.J. Chen, I. C. Lin, and C.F. Lin, “Room-temperature electroluminescence from electron-hole plasmas in the metal–oxide–silicon tunneling diodes”, Appl. Phys. Lett. 72, 1516 (2000). [1.13] A. Liu, H. Rong, R. Jones, O. Cohen, D. Hak, and M. Paniccia, “Optical Amplification and Lasing by Stimulated Raman Scattering in Silicon Waveguides,” J. Lightwave Technol. 24, 1440 (2006). [2.1] C.W. Liu, M.H. Lee, M.J. Chen, I.C. Lin, and C.F. Lin, “Room-temperature electroluminescence from electron-hole plasmas in the metal–oxide–silicon tunneling diodes,” Appl. Phys. Lett. 76, pp. 1516-1518 (2000) [2.2] C.F. Lin, T.W. Su, P.F. Chung, E.Z. Liang, M.J. Chen, C.W. Liu, “Enhancing electroluminescence from metal-oxide-silicon tunneling diodes by nano-structures of oxide grown by liquid-phase method” Materials Chemistry and Physics 77, 430 (2002) [2.3] C. F. Lin, P.F. Chung, and M.J. Chen, and W.F. Su “Nanoparticle-modified metal–oxide–silicon structure enhancing silicon band-edge electroluminescence to near-lasing action” Optics Letters 27, 713 (2002) [2.4] H.C. Card and E.H. Rhoderick, “Studies of tunnel MOS dioes II. Thermal equilibrium considerations,” J. Phys. D: Appl. Phys. 4, 1602 (1971) [2.5] M.Y. Doghish, and F.D. Ho, “A Comprehensive Analytical Model for Metal-Insulator-Semiconductor (MIS) Devices” IEEE Trans. Electron Dev. 39, 2771 (1992) [2.6] M. Hauder, J. Gstottner, W. Hansch, D. Schmitt-Landsiedl, “Void formation and electromigration in sputtered Ag lines with different encapsulations,” Sensors and Actuators, A: Physical 99, pp 137-143, (2002). [2.7] Freeman and W.E. Dahlke, “Theory of tunneling into interface states,” Solid State 35 Electronics 13, 1483 (1970) [2.8] M.J. Chen, E.Z. Liang, S.W. Chang, and C.F. Lin “Model for band-edge electroluminescence from metal–oxide–semiconductor silicon tunneling diodes” Journal of Applied Physics 90, 789 (2001) [2.9] V. Alex, S. Finkbeiner, and J. Weber, “Temperature dependence of the indirect energy gap in crystalline silicon,” J. Appl. Phys. 79, 6943 (1996) [2.10] A.W. Stephens and M.A. Green, “Effectiveness of 0.08 molar iodine in ethanol solution as a means of chemical surface passivation for photoconductance decay measurements,” Solar Energy Materials and Solar Cells 45, 255 (1997) [2.11] 謝信宏, 碩士論文 “有奈米侷限之矽金氧半發光二極體之硏究,” Chapter 4, 2003. [2.12] 黃昭睿, 碩士論文 “矽奈米結構與矽發光效率之關係硏究,” Chapter 4, 2004. [2.13] 黃武平, 碩士論文 “提高矽半導體金氧半穿隧二極體的發光效率,” Chapter 3, 2003. [3.1] M.J. Chen, E.Z. Liang, S.W. Chang, and C.F. Lin “Model for band-edge electroluminescence from metal–oxide–semiconductor silicon tunneling diodes” Journal of Applied Physics 90, 789 (2001) [3.2] M.J. Chen, C.F. Lin, M.H. Lee, and S.T. Chang, “Carrier lifetime measurement on electroluminescent metal–oxide–silicon,” Appl. Phys. Lett. 79, pp.2263-2266 (2001) [3.3] M.J. Chen, J.F. Chang, J.L Yen, C.S. Tsai, E.Z. Liang, C.F. Lin, C.W. Liu, “Electroluminescence and photoluminescence studies on carrier radiative and nonradiative recombinations in metal-oxide-silicon tunneling diodes” Journal of Applied Physics 93, 4253 (2003) [3.4] C. F. Lin, P.F. Chung, and M.J. Chen, and W.F. Su “Nanoparticle-modified metal–oxide–silicon structure enhancing silicon band-edge electroluminescence to near-lasing action” Optics Letters 27, 713 (2002) [3.5] C.F. Lin, T.W. Su, P.F. Chung, E.Z. Liang, M.J. Chen, C.W. Liu, “Enhancing electroluminescence from metal-oxide-silicon tunneling diodes by nano-structures of oxide grown by liquid-phase method” Materials Chemistry and Physics 77, 430 (2002) [3.6] C. W. Liu, M. H. Lee, M.J. Chen, I. C. Lin, and C.F. Lin, “Room-temperature electroluminescence from electron-hole plasmas in the metal–oxide–silicon tunneling 73 diodes”, Appl. Phys. Lett. 72, 1516 (2000) [3.7] M.H. Lee, K.F. Chen, C.C. Lai, C.W. Liu, W.W. Pai, M.J. Chen, C.F. Lin, 'The roughness-enhanced light emission from metal-oxide-silicon light-emitting diodes using very high vacuum prebake” Japanese Journal of Applied Physics, Part 2: Letters 41, L326 (2002) [3.8] H.C. Card and E.H. Rhoderick, “Studies of tunnel MOS dioes II. Thermal equilibrium considerations,” J. Phys. D: Appl. Phys. 4, 1602 (1971) [3.9] L.R. Freeman and W.E. Dahlke, “Theory of tunneling into interface states,” Solid State Electronics 13, 1483 (1970) [3.10] M.Y. Doghish, and F.D. Ho, “A Comprehensive Analytical Model for Metal-Insulator-Semiconductor (MIS) Devices” IEEE Trans. Electron Dev. 39, 2771 (1992) [3.11] C.D. Thurmond, “The standard thermodynamic function of the formation of electrons and hole in Ge, Si, GaAs, and GaP,” J. Electrochem. Soc. 122, 1133 (1975) [3.12] V. Alex, S. Finkbeiner, and J. Weber, “Temperature dependence of the indirect energy gap in crystalline silicon,” J. Appl. Phys. 79, 6943 (1996) [3.13] J. Sune, P. Olivo, and B. Ricco, “Self-consistent solution of the Poisson and Schrodinger equations in accumulated semiconductor-insulator interfaces,” J. Appl. 74 Phys. 70, 337 (1991) [3.14] M. A. Green, J. Zhao, A. Wang, P. J. Reece, M. Gal, “Efficient silicon light-emitting diodes” Nature 412, 805 (2001) [3.15] C.F. Lin, T.W. Su, E.Z. Liang, H.H. Hsieh, and W.P. Huang, “Light emitting diodes on Si,” SPIE, Proceedings, Vol.4996 (2003) [3.16] E. Nicollian, A. Goetzberger, and A. Lopez, “Expedient method of obtaining interface state properties from MIS conductance measurements,” Solid-State Electron. 12, pp. 937 (1969) [3.17] E. Yablonovitch, D.L. Allara, C.C. Chang, T. Gmitter, and T.B. Bright, “Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces,” Phys. Rev. Lett. 57, 249 (1986) [3.18] A.W. Stephens and M.A. Green, “Effectiveness of 0.08 molar iodine in ethanol solution as a means of chemical surface passivation for photoconductance decay measurements,” Solar Energy Materials and Solar Cells 45, 255 (1997) [3.19] G. Augustine, and A. Rohatgi, “Base doping optimization for radiation-hard Si, GaAs, and InP solar cells,” IEEE Trans. on Electron. Dev. 39, 2395 (1992) [4.1] B.Y. Tsui, and C.P. Lin, “A novel 25-nm modified Schottky-barrier FinFET with high performance,” IEEE Electron Device Letters 25, 430-432 (2004) [4.2] X. Huang, W.-C. Lee, C. Kuo, D. Hisamoto, L. Chang, J. Kedzierski, E. Anderson, H. Takeuchi, Y.-K. Choi, K. Asano, V. Subramanian, T.-J. King, J. Bokor, and C. Hu, “Sub-50 nm P-Channel FinFET,” IEEE Transactions on Electron Devices 48, 880-886 (2001) [4.3] H. Namatsu, Y. Watanabe, K. Yamazaki, T. Yamaguchi, M. Nagase, T. Ono, A. Fujiwara, and S. Horiguchi, “Fabrication of Si single-electron transistors with precise dimensions by electron-beam nanolithography,” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21, 1-5 (2003) [4.4] Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase, “Fabrication method for IC-oriented Si single-electron transistors,” IEEE Transactions on Electron Devices 47, 147-153 (2000) [4.5] S. Lee, W. Cho, J. Woon, I. Han, C. Ki, J. Won, and J.I. Lee, “White light emitting silicon nanocrystals as nanophosphor,” Physica Status Solidi C: Conferences 1, 2767-2770 (2004) [4.6] Z. Yaniv, L. Thuesen, D. Hutchins, and R.L. Fink, “ Silicon nanocrystals light emission as a novel display material,” 2002 SID Conference Record of the 95 International Display Research Conference, 754-754 [4.7] K. Luterova, M. Cazzanelli, J.-P. Likforman, D. Navarro, J. Valenta, T. Ostatnicky, K. Dohnalova, S. Cheylan, P. Gilliot, B. Honerlage, L. Pavesi, and I. Pelant, “Optical gain in nanocrystalline silicon: Comparison of planar waveguide geometry with a non-waveguiding ensemble of nanocrystals,” Optical Materials 27, 750-755 (2005) [4.8] P.K. Kashkarov, L.A. Golovan, A.B. Fedotov, A.I Efimova, L.P. Kuznetsova, V.Y. Timoshenko, D.A. Sidorov-Biryukov, A.M. Zheltikov, and J.W. Haus, “Photonic bandgap materials and birefringent layers based on anisotropically nanostructured silicon,” Journal of the Optical Society of America B: Optical Physics 19, 2274-2281 (2002) [4.9] H. Sun, W. Shi, and Y.J. Ding, “THz photonic bandgap crystals,” 2003 Lasers and Electro-Optics Society Annual Meeting 2, 942 (2003) [4.10] Z.Yu, H. Gao, W. Wu, H. Ge, and S.Y. Chou, “Fabrication of large area subwavelength antireflection structures on Si using trilayer resist nanoimprint lithography and liftoff,” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21, 2874-2877 (2003) [4.11] K. Hane, and Y. Kanamori, “Sub-wavelength structure for anti-reflection fabricated by fast atom beam etching,” 2001 Pacific Rim Conference on Lasers and Electro-Optics Technical Digest, I186-I187 96 [4.12] S. Grigoropoulos, E. Gogolides,a) A. D. Tserepi, and A. G. Nassiopoulos, “Highly anisotropic silicon reactive ion etching for nanofabrication using mixtures of SF6/CHF3 gases,” J. Vac. Sci. Technol. B 15, 640 (1997) [4.13] E. Gogolides, S. Grigoropoulos, and A.G. Nassiopoulos, “Highly Anisotropic Room-Temperature sub-half-micron Si Reactive Ion Etching using Fluorine only containing gases,” Microelectronic Engineering 27, 449-452 (1995) [4.14] C.F.H. Gondran, E. Morales, A. Guerry, W. Xiong, C.R. Cleavelin, R. Wise, S. Balasubramanian, and T.-J. King, “Fin sidewall microroughness measurement by AFM,” Materials Research Society Symposium Proceedings 811, 365-370 (2004) [4.15] F. Llopis, I. Tobias, “Influence of texture feature size on the optical performance of silicon solar cells,” Progress in Photovoltaics: Research and Applications 13, 27-36 (2005) [4.16] T. Syau, B. Baliga, H. Jayant, and W. Raymond “Reactive ion etching of silicon trenches using SF6/O2 gas mixtures,” Journal of the Electrochemical Society 138, 3076-3081 (1991) [4.17] I.W. Rangelow, “Critical tasks in high aspect ratio silicon dry etching for microelectromechanical systems,” Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 21, 1550-1562 (2003) [4.18] K.A. Reihardt, S.M. Kelso “The use of beam profile reflectometry to determine depth 97 of silicon etch damage and contamination,” Proceedings of SPIE 2638, 147-158 (1995). [4.19] A.W. Stephen, M.A. Green “Effectiveness of 0.08 molar iodine in ethanol as means of chemical surface passivation for photoconductance decay measurements,” Solar Energy Materials and Solar Cells 45, 255-265 (1997). [4.20] K.A. Valiev, “The physics of submicron lithography” pp. 237~239, Plenum Press, New York (1992). [4.21] L.D. Dyer, G.J. Grant, C.M. Tiption, A.E. Stephens, “A comparison of silicon wafer etching by KOH and acid solutions,” J. Electrochem. Soc. 136, 3016-3018 (1989). [5.1] C. F. Lin, P.F. Chung, and M.J. Chen, and W.F. Su “Nanoparticle-modified metal–oxide–silicon structure enhancing silicon band-edge electroluminescence to near-lasing action” Optics Letters 27, 713 (2002). [5.2] L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franz, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408, 440-444 (2000). [5.3] R. Claps, D. Dimitropoulos, and B. Jalali, “Stimulated Raman scattering in silicon waveguides ,” Electronics Letters 38, 1352 (2002). [5.4] M.J. Chen, E.Z. Liang, S.W. Chang, and C.F. Lin, “Model for band-edge electroluminescence from metal–oxide–semiconductor silicon tunneling diodes,” J. Appl. Phys. 90, 789 (2001). [5.5] L.A. Rivlin and A.A. Zadernovsky, “Photon-phonon lasing in indirect gap semiconductors,” Optics Communications 100, 322 (1993). [5.6] C.D. Thurmond, “The standard thermodynamic function of the formation of electrons and hole in Ge, Si, GaAs, and GaP,” J. Electrochem. Soc. 122, 1133 (1975). [5.7] C. W. Liu, M. H. Lee, M.J. Chen, I. C. Lin, and C.F. Lin, “Room-temperature electroluminescence from electron-hole plasmas in the metal–oxide–silicon tunneling diodes”, Appl. Phys. Lett. 72, 1516 (2000). [5.8] W. L. Ng, M. A. Lourenco, R. M. Gwilliam, S. Ledain, G. Shao, K. P. Homewood, 119 “An efficient room-temperature silicon-based light-emitting diode” Nature 410, 192 (2001). [5.9] M. A. Green, J. Zhao, A. Wang, P. J. Reece, M. Gal, “Efficient silicon light-emitting diodes” Nature 412, 805 (2001). [5.10] A.E. Kaloyeros, S. Oktyabrsky, “Prospects and challenges for chip-level optical interconnects,” Solid State Technology 48, 30 (2005). [5.11] L. Rebohle, T. Gebel, R.A. Yankov, T. Trautmann, W. Skorupa, J. Sun, G. Gauglitz, R. Frank, “Microarrays of silicon-based light emitters for novel biosensor and lab-on-a-chip applications,” Optical Materials 27, 1055 (2005) [5.12] O. Madelung, “Introduction to Solid-State Theory,” 271-276, Springer-Verlag, New York (1978). [5.13] G.G. Macfarlane, T.P. McLean, J.E. Quarrington, and and V. Roberts, “Fine Structure in the Absorption-Edge Spectrum of Si,” Phys. Rev. 111, 1245 (1958). [5.14] M.A. Vouk and E.C. Lightowlers, “Two-phonon assisted free exciton recombination radiation from intrinsic silicon,” J. Phys. C: Solid State Phys. 10, 3689 (1977) [5.15] V. Alex, S. Finkbeiner, and J. Weber, “Temperature dependence of the indirect energy gap in crystalline silicon,” J. Appl. Phys. 79, 6943 (1996). [5.16] W. Weber, “Adiabatic bond charge model for the phonons in diamond, Si, Ge, and 120 α-Sn,” Phys. Rev. B 15, pp. 4789-4803 (1977) [5.17] M. Lax and J.J. Hopfield, “Selection rules connecting different points in the Brillouin zone,” Phys. Rev. 124, pp. 115-123 (1961) [5.18] W.E. Bron and W.Grill, “Stimulated Phonon Emission,” Phys. Rev. Lett. 40, 1459 (1978). [5.19] O. A. C. Nunes, A. L. A. Fonseca, D. A. Agrello, 'Phonon amplification in a quasi-one-dimensional GaAs quantum channel', Superlattices and Microstructures 32, 49 (2002). [6.1] W. Bogaerts, R. Baets, P. Dumon, V. Wiaux, S. Beckx, D. Taillaert, B. Luyssaert, J. Van Campenhout, P. Bienstman, D. Van Thourhout, “Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology,” J. Lightwave Technol. 23, pp. 401-412 (2005). [6.2] K.K. Lee, D.R. Lim, H.C. Luan, A. Agarwal, J. Foresi, and L.C. Kimerling, “Effect of size and roughness on light transmission in a Si/SiO2 waveguide: Experiments and model,” Appl. Phys. Lett. 77, 1618 (2000). [6.3] F. Grillot, L. Vivien, S. Laval, D. Pascal, and E. Cassan “Size Influence on the Propagation Loss Induced by Sidewall Roughness in Ultrasmall SOI Waveguides,” IEEE Photonics Technology Letters 16, 1661 (2004). [6.4] H. Kuribayashi, R. Hiruta, and R. Shimizu, K. Sudoh and H. Iwasaki, “Shape transformation of silicon trenches during hydrogen annealing,” J. Vac. Sci. Technol. A 21, 1279 (2003). [6.5] J. Takahashi, T. Tsuchizawa, T. Watanabe, and S. Itabashi ”Oxidation-induced improvement in the sidewall morphology and cross-sectional profile of silicon wire waveguides,” J. Vac. Sci. Technol. B 22, 2522 (2004). [6.6] D.K. Sparacin, S.J. Spector, and L.C. Kimerling, “Silicon Waveguide Sidewall Smoothing by Wet Chemical Oxidation,” J. Lightwave Technol. 23, 2455 (2005). 146 [6.7] 黃昭睿, 碩士論文 “矽奈米結構與矽發光效率之關係硏究,” Chapter 4, 2004. [6.8] M.C. Ferrara, M.R. Perrone, M.L. Protopapa, J. Sancho-Parramon, S. Bosch, an S. Mazzarelli, “High mechanical damage resistant sol-gel coating for high power lasers,” Proceedings of SPIE - The International Society for Optical Engineering, v 5250, pp. 537-545 (2004) [6.9] A.G. Rickman, G.T. Reed, and F. Namavar, “Silicon-on-Insulator Optical Rib Waveguide Loss and Mode Characteristics,” J. Lightwave Techno. 12, 1711 (1994). [6.10] A. Rickman, G. T. Reed, B. L. Weiss, and F. Namavar, “Low-loss planar optical waveguides fabricated in SIMOX material,” IEEE Photon. Technol. Lett. 4, pp. 633-635 (1992). [6.11] A. Liu, H. Rong, R. Jones, O. Cohen, D. Hak, and M. Paniccia, “Optical Amplification and Lasing by Stimulated Raman Scattering in Silicon Waveguides,” J. Lightwave Technol. 24, 1440 (2006). [6.12] A. Liu, H. Rong, M. Paniccia, O. Cohen, and D. Hak, “Net optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering,” Opt. Express 12, pp. 4261–4267 (2004). [6.13] M.C. Lee, Y. Jin and C.W. Ming, “Silicon Profile Transformation and Sidewall Roughness Reduction Using Hydrogen Annealing,”18th IEEE Conf. on MEMS, 596 (2005). 147 [6.14] E.Z. Liang, C.J. Huang, and C.F. Lin, “Anisotropy control and damage analysis of decananometer structures of Si by SF6/O2 and SF6/CHF3 reactive ion etch,” J. Vac. Sci. Technol. B 24, pp. 500-603 (2006). [6.15] Y. Wang, Z. Lin, X. Cheng, C. Zhang, F. Gao, and F. Zhang, “Scattering loss in silicon-on-insulator rib waveguides fabricated by inductively coupled plasma reactive ion etching,” Appl. Phys. Lett. 85, 3995 (2004). [6.16] B.C. Larson, J.Z. Tischler, and D.M. Mills, “Nanosecond resolution time-resolved x-ray study of silicon during pulsed-laser irradiation,” Journal of Materials Research 1, 144-154 (1986) [6.17] S.Y. Chou, C. Keimel, and Jain Gu, “Ultrafast and direct imprint of nanostructures in silicon” Nature 417, 835 (2002) [6.18] K.A. Reihardt, S.M. Kelso “The use of beam profile reflectometry to determine depth of silicon etch damage and contamination,” Proceedings of SPIE 2638, 147-158 (1995). | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/33633 | - |
dc.description.abstract | 本論文著重在金氧矽發光二極體之製作與分析,特別是使用二氧化矽奈米粒子作為氧化層的裝置。使用二氧化矽奈米粒子造成載子侷限,因而促進了發光效率。在金氧矽發光二極體中,放光-電流特性以及放光的頻率反應時間會隨注入電流而改變。根據這些特性,我們推導了一個載子動力模型來統一解釋電流-電壓特性、放光-電流特性、以及小信號放光頻率反應隨電流改變的關係。由此理論推斷出此裝置的放光效率為數十個百分比。我們在使用二氧化矽奈米粒子的金氧矽發光二極體中加入了矽奈米結構,來促進載子侷限,可增加百分之三十的發光效率。我們從載子動力模型發展出金氧矽發光二極體中的光增益模型,因而推導矽半導體中居量反轉的條件以及光增益係數。我們推導了金氧矽發光二極體中操作在不同的電壓與電流下的光增益係數,其數值在光子能量為矽能隙時約為1cm-1。在使用金氧矽發光二極體做為發光層的電激發矽波導中,要使受激放光發生,其
散射損失必須小於1cm-1。此條件等同於要求此波導的側璧之均方根粗糙度須小於1nm。我們發展了雷射重組的技術,能夠降低均方根粗糙度至0.239nm。 | zh_TW |
dc.description.abstract | The fabrication and characterization of the electroluminescent metal-oxide-semiconductor tunneling diodes (MOS-TD) based on silicon are presented in this dissertation. A special case of MOS-TDs, which uses SiO2 nanoparticles as the oxide layer, is studied. The use of SiO2 nanoparticles results in carrier confinement and enhances light emission. In MOSTDs, the light-current relation, and the frequency response lifetime are found to vary with the injection current density. A carrier dynamic model based on characteristics of MOS-TDs is developed to explain the current-voltage relation, the light-current relation, and the small signal frequency response. The theoretical internal efficiency is estimated to be several tens of percents. A nanostructured MOS-TDs using SiO2 nanoparticles is fabricated to improve the carrier confinement and shows a 30% more light emission efficiency. An optical gain model in MOS-TDs is developed based on the carrier dynamic model. The criterion of population inversion and the optical gain coefficients in Si are derived. The optical gain coefficients are calculated at different voltages and currents in MOS-TDs, whose magnitudes are about 1 cm-1 at the silicon bandgap energy. For stimulated emission to occur in an electrically pumped Si waveguide, which uses the MOS-TD as the active region, the scattering loss has to be less than 1 cm-1. This corresponds to a root-mean-square (RMS) roughness of less than 1 nm at the waveguide sidewalls. A laser reformation technique capable of reducing the RMS roughness to 0.239nm is developed. | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T05:44:02Z (GMT). No. of bitstreams: 1 ntu-95-F89941012-1.pdf: 1990537 bytes, checksum: 42f6a6fb4fe6aadc9afca550fb0e7293 (MD5) Previous issue date: 2006 | en |
dc.description.tableofcontents | Table of Contents
Chapter 1 Introduction 14 1-1 Backgrounds 14 1-2 Outlines 16 Chapter 2 Fabrication of electroluminescent metal-oxide-semiconductor silicon tunneling diodes using silicon dioxide nanoparticles 22 2-1 Introduction 22 2-2 Fabrication of an EL MOS-TD using SiO2 nanoparticles 24 2-3 Operation of EL MOS-TDs using SiO2 nanoparticles 26 2-4 Influence of fabrication processes on EQE 31 2-5 Summary 32 Chapter 3 Rigorous carrier dynamic model of electroluminescent MOS-TDs 36 3-1 Introduction 36 3-2 Modeling of current densities 39 3-3 Light emission efficiency 57 3-4 Small signal light-current response 59 3-5 Summary 51 Chapter 4 Fabrication of Si nanorods in MOS-TDs by reactive ion etch 75 4-1 Introduction 75 4-2 Anisotropic control 77 4-3 Etch mask preparation 82 4-4 Silicon nanorods 84 4-5 Etch damage 87 4-6 Performance of Si nanostructured MOS-TDs 91 4-7 Summary 92 Chapter 5 Optical gain model in Si MOS-TDs 98 5-1 Introduction 98 5-2 Indirect optical interactions in Si 100 5-3 Optical gain coefficients 109 5-4 Summary 117 Chapter 6 Smooth Si waveguides by laser reformation 121 6-1 Introduction 121 6-2 The relation of roughness and scattering loss 124 6-3 Fabrication processes of the smooth waveguides 127 6-4 Preparation of the excimer laser 129 6-5 The crystal quality after laser reformation 130 6-6 Shape deformation 132 6-7 Roughness analysis 135 6-8 Smoothed Si waveguides 140 6-9 Summary 143 Chapter 7 Conclusion 148 | |
dc.language.iso | en | |
dc.title | 金氧矽發光二極體之製作與分析 | zh_TW |
dc.title | Fabrication and Characterization of Electroluminescent Metal-Oxide-Semiconductor Silicon Tunneling Diodes | en |
dc.type | Thesis | |
dc.date.schoolyear | 94-2 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 彭隆翰,吳忠幟,胡振國,王維新 | |
dc.subject.keyword | 矽,發光二極體, | zh_TW |
dc.subject.keyword | Silicon,Light emitting diode, | en |
dc.relation.page | 152 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2006-07-17 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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