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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 張培仁 | |
| dc.contributor.author | Ching-Yao Lin | en |
| dc.contributor.author | 林敬堯 | zh_TW |
| dc.date.accessioned | 2021-06-13T04:40:52Z | - |
| dc.date.available | 2006-07-24 | |
| dc.date.copyright | 2006-07-24 | |
| dc.date.issued | 2006 | |
| dc.date.submitted | 2006-07-18 | |
| dc.identifier.citation | [1] J. Bay and J. Branebjerg,” Functional Testing and Calibration of Microsystems at Wafer Level,” DELTA Danish Electronics, Light & Acoustics
[2] Folk, L. E. and Derrington, C. E., ”Method and apparatus for high pressure testing of solid state pressure sensors, ” U. S. Pat. 4708012, 1987 [3] Folk, L. E., Newton, W. B., Rossman, R. P., ”Method for low pressure testing of a solid state pressure sensor, ” U. S. Pat. 4777716, 1988 [4] Nishiguchi et al, ”Method of testing semiconductor pressure sensor, ” U. S. Pat. 4825684, 1989 [5] Koga et al, ”Pressure-adjusting device for adjusting output of integrated pressure sensor, ” U. S. Pat. 5528214, 1996 [6] O'Brien et al, ”Method for testing pressure sensors, ” U. S. Pat. 5900530, 1999 [7] Dietrich et al, ” Tester for pressure sensors, ” U. S. Pat. 6688156, 2004 [8] Microchem SU-8 series photoresist user manual [9] Clariant AZ P4620 phtoresist user manual [10] 葉伍峰，微機電薄膜之材料機械性質研究， 國立台灣大學應用力學所碩士論文，2003 [11] H. Song and P. K. Ajmera, “Use of a photoresist sacrificial layer with SU-8 electroplating mould in MEMS fabrication.”Journal of Micromechanics and Microengineering, 13, pp. 816-821, 2003 [12] Microchem SU-8 photoresist material safety datasheet [13] Microchem KMPR photoresist user manual [14] apm ATP100 pressure sensor data sheet [15] 劉士文，射頻微機電等相位微波衰減器之研究， 國立台灣大學應用力學所碩 士論文，2003 [16] 軒亨企業有限公司，鍍液操作條件 [17] M. Madou, Fundamentals of MICROFABRICATION, CRC press, 2002 [18] G. Hong, A. S. Holmes, M. E. Heaton, “ SU8 resist plasma etching and its optimization.” Proceeding of the DTIP, France, pp. 268-271, 2003 [19] S. C. Gong and C .K. Lee, “Analytical Solutions of Sensitivity for Pressure Microsensors,” IEEE SENSORS JOURNAL, Vol. 1, No. 4, pp.340-344, 2001 [20] S.C. Gong, “Effects of pressure sensor dimensions on process window of membrane thickness, ” Sensors and Actuators A, Vol. 112, pp.286–290, 2004 [21] A.S. Sedra, K. C. Smith, Microelectronic circuits, Oxford university press, 2004 [22] TI INA326 instrumentation amplifier data sheet [23] W. R. Mann, F. L. Taber, P. W. Seitzer and J. J. Broz, “The Leading Edge of Production Wafer Probe Test Technology,” IEEE International Test Conference, Paper41.1, pp.1168-1193, 2004 [24] K. Kataoka, T. Itoh and T. Suga, “Low Contact-force Fritting Probe Card Using Buckling Microcantilevers,” ITC International Test Conference, Paper39.1, pp.1008-1013, 2003 [25] D. Langlois, M. Fardel, K. R. Heiman and F. Du, “Implementing Fiducial Probe Card Alignment Technology for Production Wafer Probing,” IEEE/SEMI Advanced Manufacturing Conference, pp.238-243, 2003 [26] K. Kataoka, S. Kawamura, T. Itoh, K. Ishikawa, H. Honma and T Suga, “Electroplating Ni Micro-cantilevers for Low Contact-force IC Probing,” Sensors and Actuators A, Vol. 103, pp.116–121, 2003 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/33444 | - |
| dc.description.abstract | 隨著壓力感測器市場的成長，晶圓級壓力感測器檢測也日益重要。對現今壓力感測器的製造商而言，快速且價格合理的檢測方式為迫切的需求。本論文利用空氣軸承的概念，提出一以微機電技術為基礎的新壓力感測器檢測方式。藉由在待測的壓力感測器與檢測晶片間創造一微小的間隙，其高度約為數十微米，利用空氣黏滯性產生檢測時所需的壓力，同時由以微機電製程製作的懸臂樑探針讀取壓力感測器的輸出訊號。爲了實現此ㄧ檢測概念，本論文完成兩種不同製程檢測晶片並搭配相對應的量測架構，其一是利用KMPR光阻搭配電鍍的方式製作懸臂樑探針，最後利用SU-8光阻做為檢測晶片的底材。另ㄧ是使用玻璃晶片為底材，在玻璃晶片上以AZ P4620光阻以及KMPR光阻搭配電鍍方式製作懸臂樑探針。以本研究為基礎，在未來將可實現一快速且價格合理的壓力感測器檢測方式。 | zh_TW |
| dc.description.abstract | As the pressure sensor market grows, the wafer-level sensor testing becomes more and more important. A fast and cost-effective testing method is currently needed for the present pressure sensor manufacture. Inspired by the concept of air-bearing, a new testing method based on MEMS technology is proposed in this thesis. By creating a tiny gap between the pressure sensor to be tested and the testing chip, the pressure required to stimulate the pressure sensor is caused by the viscosity of air, and the electrical output is read out by cantilever-type MEMS probe. Two kinds of cantilever-type MEMS probes used in this thesis are fabricated by different fabrication process. One is fabricated by electroplating with KMPR and SU-8 photoresists molds, and the SU-8 photoresist is used for substrate. The other is fabricated on glass substrate by electroplating with AZ P4620 and KMPR photoresist. Each type of MEMS type probes correspond to different experiment apparatuses. Based on the study in this thesis, a fast and cost effective testing method can be realized. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T04:40:52Z (GMT). No. of bitstreams: 1 ntu-95-R92543029-1.pdf: 1187442 bytes, checksum: 6d9f63fc9267fd41aeacf824814c758a (MD5) Previous issue date: 2006 | en |
| dc.description.tableofcontents | 謝誌 i
中文摘要 iii Abstract iv Table of Contents v List of Figures vii List of Tables ix Chapter 1 Introduction 1 1.1 Introduction 1 1.2 Literature Review 3 1.2.1. United States Patent 1987/4708012 3 1.2.2. United States Patent 1988/4777716 4 1.2.3. United States Patent 1989/4825684 4 1.2.4. United States Patent 1996/5528214 5 1.2.5. United States Patent 1999/5900530 7 1.2.6. United States Patent 2004/6688156 B2 8 1.2.7. Summary 9 1.3 Motivation 10 Chapter 2 Testing Chip on SU-8 Substrate 12 2.1 Design and Analysis 12 2.1.1. Selection of Photoresists 12 2.1.2. Mask Layout 13 2.1.3. Electroplate 15 2.2 Fabrication Process 18 2.3 Improvement of KMPR Removal 26 2.3.1. Concept 26 2.3.2. Fabrication Process of Al Sacrificial Layers 27 2.3.3. Results of Improved KMPR Removal Process 29 2.4 Experiment 30 2.4.1. Amplifier Circuit 30 2.4.2. Experiment Apparatus 34 2.4.3. Experiment Result 36 2.5 Conclusions 39 Chapter 3 Testing Chip on Glass Substrate 40 3.1 Fabrication Process 40 3.2 Experiment Apparatus 45 3.2.1. Chip Holder 45 3.2.2. Measurement Apparatus 48 3.3 Experiment Results 50 3.3.1. Problem of Planarity 50 3.3.2. Adjustment to Planarity 53 Chapter 4 Future Work 58 4.1 Measurement Apparatus 58 References 61 Appendix 64 | |
| dc.language.iso | en | |
| dc.title | 整合式壓力感測器檢測晶片 | zh_TW |
| dc.title | Integrated testing chip for pressure sensor test | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 94-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 楊燿州,黃榮堂,胡毓忠 | |
| dc.subject.keyword | 壓力感測器,檢測晶片,壓力感測器檢測,SU8, | zh_TW |
| dc.subject.keyword | pressure sensor,testing chip,pressure sensor test,SU8, | en |
| dc.relation.page | 67 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2006-07-19 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 應用力學研究所 | zh_TW |
| 顯示於系所單位： | 應用力學研究所 | |
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