請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/33270
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 黃美嬌 | |
dc.contributor.author | Rong-Tai Hong | en |
dc.contributor.author | 洪榮泰 | zh_TW |
dc.date.accessioned | 2021-06-13T04:32:06Z | - |
dc.date.available | 2006-07-26 | |
dc.date.copyright | 2006-07-26 | |
dc.date.issued | 2006 | |
dc.date.submitted | 2006-07-19 | |
dc.identifier.citation | [1] S. Venkatesan, A.V. Gelatos, V. Misra, B. Smith and R. Islam,
“A High Performance 1.8V, 0.29 μm CMOS Technology with Copper Metallization” Proc. IEEE IEDM, 769(1997). [2] D. Edelstein, J. Heidenreich, R. Goldblatt, W. Cote, C. Uzoh, N. Lustig, P. Roper, T. McDevitt, W. Motsiff, A. Simon, J. Dukovic, R. Wachnik, H. Rathore, R. Schulz, L. Su, S. Luce, and J. Slattery,“ Full Copper Wiring in a Sub-0.25 μm CMOS ULSI Technology,” Proc. IEEE IEDM, pp. 773 (1997). [3] C. S. Hau-Riege, “An introduction to Cu electromigration”, Microel. Reliab., 44(2)195(2004). [4] B.Li, T.D. Sullivan, and T.C. Lee, Reli,“Reliability challenges for copper interconnects”, Microel. Reliab., 44(3) 365(2004). [5] J. Lienig “Interconnect and Current-Density Stress An Introduction to Electromigration-Aware Design,” Invited Speaker at the SLIP (System Level Interconnect Prediction) Conf., San Francisco, April 2005. [6] M. Hayashi, S. Nakano and T. Wada,“Dependence of copper interconnect electromigration phenomenon on barrier metal materials”, Microel. Reli., 43(9)1545(2003). [7] A. Scorzoni, C. Caprile and F. Fantini, “Electromigration in Thin Film Interconnection Lines: Models, Methods and Results”, Mater. Sci. Reps., 7(4)143(1991). [8] A.G. Sabnis,VLSI Electronics Microstructure Science:VLSI reliability, Vol 22,1990. [9] A. E. Kaloyeros and E. Eisenbraun,“Ultrathin Diffusion Barriers/ Liners for Gigascale Copper Metallization”, Annu. Rev. Mater. Sci. 30, 363(2000). 107 5d. [10] H. P. Kattelus and M. A. Nicolet, in Diffusion Phenomena in Thin Films and Microelectronic Materials, edited by D. Gupta and P. S. Ho (Noyes, Park Ridge, NJ,432(1989). [11] P.C. Andricacos, C. Uzoh, J.O. Dukovic, J. Horkans, and H. Deligianni,“Damascene copper electroplating for chip interconnections”, IBM J. Res. Dev. 42,567 (1998). [12] M. Sze, Semiconductor Devices Physics and Technology, Second ed., Willy and Sons, New York, (2001). [13] K. Derbyshire, “Copper interconnects face fab realities,” Semi. Mag. 2(11) (2001) [14] K. Maex M.R. Baklanov, D. Shamiryan, F. Iacopi, S.H. Brongersma and Z.S. Yanovitskaya, “ Low dielectric constant materials for microelectronics,” J. Appl. Phys. 93(11) 8793 (2003). [15] V.H. Nguyen, H.V. Kranenbug and P.H. Woerlee, “Copper for advanced interconnect”, Proc. 3rd Int. Workshop on Mat. Sci, Hanoi,23(1990). [16] C.J. Chen, Introduction to Scanning Tunneling Microscopy, Oxford Univ. Press(1993). [17] T.T. Tsong, Atom-Probe Field Ion Microscpoic, Cambridge Univ. Press(1989). [18] D.C Rapport, The Arts of Molecular Dynamic Simulation, Oxford Univ. London(2003). [19] F.H. Baumann, D.L. Chopp, T. Rubia, G.H. Glimer, J.E. Greene, H. Huang, S. Kodambake, P.O. Sullivan and I. Petrov, “Multiscale Modeling of Thin-Film Deposition:Applications to Si Device Processing”,MRS Bull.Mar. 182(2001). [20] S. Hamaguchi and M. Rossnagel, Simulations of trench-filling profiles under ionized magnetron sputter,” J. Vac. Sci. Technol. B, 13(2) 183(1995). [21] D. Adalsteinsson and J. A. Sethian, “A level set approach to a unified model for etching, deposition, and lithography I: algorithms and two-dimensional simulations,” J. Comp. Phy. 120(1) (1995)128. [22] M. Ikegawa and J. Kobayashi,“Deposition profile simulation using the direct simulation monte carlo method,” J. Electrochem. Soc. 136(10) (1989)2982. 108 5d. [23] E.S. Oran, C.K. Oh CK and B.Z. Cybyk,“Direct simulation monte carlo: recent advances and applications,” Annu. Rev. Flu. Mech. 30,403 (1998). [24] C. H. Huang, G. H. Glimer and T. D. Rubia, “An atomistic simulator for thin film deposition in three dimensions,” J. Appl. Phys. 84(7) (1998)3636. [25] K. -H. M¨uller, “Role of incident kinetic-energy of adatoms in thin-film growth,” Surface Sci. 184 (1987)L375. [26] K. -H. M¨uller,“Cluster-beam deposition of thin-films - a molecular-dynamics simulation,” J. Appl. Phys. 61(7)2516(1987). [27] K. -H. M¨uller, “Ion-beam-induced epitaxial vapor-phase growth - a molecular-dynamics study,” Phys. Rev. B. 35(15) (1991)7906. [28] J.W. Evans, D.E. Sanders, P.A. Thiel and A.E. DePristo,“Lowtemperature epitaxial growth of thin metal films,” Phys. Rev. B. 41(3) 5410(1990). [29] R. W. Smith and D. J. Srolovitz, “Void formation during film growth: A molecular dynamics simulation study,” J. Appl. Phys. 79 (3)1448(1996). [30] R.W. Smith and D.J. Scrolovitz, “A two-dimensional molecular dynamics simulation of thin film growth by oblique deposition,” J. App. Phys., 79(3) (1996) 1448. [31] X.W. Zhou, R.A. Johnson and H.N.G. Wadley,“ A molecular dynamics study of nickel vapor deposition: temperature, incident angle, and adatom energy effects,” Acta Mater 45(4)1513(1997). [32] C.L. Kelchner and A.E. Depristo, “Molecular dynamics simulation of low energy cluster deposition during diffusion-limited thin film growth,” NanoStru. Mats. 8,253(1997). [33] M. Kubo and A. Stirling, R. Miura, R. Yamauchi and A. Miyamoto,“Molecular dynamics simulation for ultrafine gold particles deposited on metal oxides,” Cata. Today., 36(1) (1997)143. [34] X. W. Zhou and H. N. G. Wadley, Surf. Sci., 431 (1999)58. [35] C.C Huang, G.J. Huang, S.P. Ju and J.G. Chang, “Incident ion characteristics in ionized physical vapor deposition using molecular dynamics simulation,” Surf. Sci. 512(1-2)135(2002). 109 5d. [36] P. Klein, B. Gottwald, T. Frauenheim, C. K¨ohler and A. Gemmler, “Residual stresses modeled by MD simulation applied to PVD DC sputter deposition,”, Surf. Coat. Tech. 200, 1600 (2005). [37] Y.G Yang, R.A. Johnson and H.N.G. Wadley, “A monte carl simulation of the physical vapor deposition of nickel,” Acta Mat. 45(4)1455 (1997). [38] K. -H. M¨uller,“stress and microstructure of sputter-deposited thin-films- molecular-dynamics investigations,” J. Appl. Phys. 62(5)1796 (1987). [39] C.C. Fang, F. Janes and V. Prasad, “ Molecular dynamics modeling of growth, microstructure and stress in sputter films with impurity atom incorporation,” MRS Porc. 280 (1993)463. [40] F. Ying F, R.W Smith and D.J Srolovitz , “The mechanism of texture formation during film growth: The roles of preferential sputtering and shadowing,” Appl. Phys. Lett. 69(20)3007 (1996). [41] L. Dong and D.J. Scrolovitz, “Texture development mechanisms in ion beam assisted deposition,” J. Appl. Phys., 84(9) 5261(1998). [42] T.P.C Klaver and B.J. Thijsse, “Molecular dynamics simulations of Cu/Ta and Ta/Cu thin film growth,” J. of Comp-Aid Mats Design, 20,(2003)61. [43] T.P.C Klaver, Atomic Simulation of Cu/Ta thin film deposition and other phenomena Ph.D Thesis. TUD Technische Universiteit Delft (2004, Oct)(Adviser: BJ Thijsse). [44] B.J. Adler, T.E. Wainwright, “Phase transition for a hard sphere system,”, J. Chem. Phys. 27(5)1208(1957). [45] B.J. Adler, T.E. Wainwright, “Studies in molecular dynamics: General methods I.,” J. Chem. Phys. 31, 459 (1959). [46] G.H. Vineyard, in: P.C. Gehien, J.R. Beeler Jr., R.I. Jaffee (Eds.), Interatomic Potentials and Simulation of Lattice Defects, Plenum Press, New York, (1972). [47] G. Ciccotti and W. G. Hoover, Molecular Dynamics Simulation of Statistical Mechanical Systems, North Holland, Amsterdam, (1986). [48] J.M. Haile, Molecular Dynamics Simulation Elementary Methods, John Wileys and Sons (1997). 110 5d. [49] H.N.G. Wadley, X.W. Zhou, and R.A. Johnson, “Mechanisms, Models, and Methods of Vapor Deposition,” Prog. in Mat. Sci., 46,329 (2001). [50] M.P. Alien and D.J. Tildesley : Computer Simulation of Liquid. Oxford Univ. Press. Oxford(1987). [51] L. Verlet, “Computer experiments on classical fluids. I. thermodynamical properties of Lennard-Jones molecules,” Phys. Rev. 159(1) 98(1967). [52] P. Schofield, “Computer simulation studies of the liquid state,” Comp. Phys. Comm. 5(1)17 (1973). [53] B.W. Zhang, Throry of Eamedded Atom Method and Its Application to Materials Science, Hunan Univ. Press (2002). [54] R. A. Johnson, “Relationship between two-body interatomic potentials in a lattice model and elastic constants,” Phys. Rev. B6(6)2094(1972). [55] M.J. Stott and E. Zaremba, “Quasiatoms: An approach to atoms in nonuniform electronic systems,” Phys. Rev. B22(4)1564 (1980). [56] P. Hohenberg and W. Kohn, “Inhomogeneous electron gas,”Phys. Rev. 136(B3) 864(1964). [57] M.S. Daw, S.M. Foiles, and M.I. Baskes, “The Embedded Atom Method: A review of theory and applications,”Mater. Sci. Rep. 9 (1993) 251. [58] M.S. Daw and M. 1. Baskes, “Semiempirical, quantum mechanical calculation of hydrogen embrittlement in metals,” Phys. Rev. Lett. 50(17) 1285(1983). [59] M. S. Daw and M. I. “Baskes,Embedded-atom method: Derivation and application to impurities, surfaces, and other defects in metals,” Phys. Rev. B29(12)6443 (1984). [60] E. Clementi and C. Roelti, At. Data Nucl. Data Tables 14 (1974) 177. [61] A. D. McLean and R. S. McLean, At. Data Nucl. Data Tables 26(1981) 197. [62] R. A. Johnson, “Analytic nearest-neighbor model for fcc metals,” Phys. Rev. B37(8)3924 (1988). 111 5d. [63] A.Banerjea and J. R. Smith, “Origins of the universal bindingenergy relation,” Phys. Rev. B37(12)6632 (1988). [64] J. H. Rose, J.R. Smith, and J. Ferrante, “Universal features of bonding in metals,” Phys. Rev. B 28(1983) 1835. [65] J. H. Rose, J. R. Smith, F. Guinea, and J. Ferrante, “Universal features of the equation of state of metals,” Phys. Rev. B29(6) 2963(1984). [66] D.J. Oh and R. A. Johnson, “Simple Embedded-atom-method model for fcc and hcp metals,” J. Mater. Res. 3(3)471 (1988). [67] K.W.Jacobsen,J.K. Nørskov and M.J. Puaka, “interatomic interactions in the effective-medium theory,” Phys. Rev. B35 (1987) 7423 [68] M.J. Puska, R.M. Nieminen and M. Mannien,“Atoms embedded in an electron gas: Immersion energies,” Phys. Rev. B24(6) 3037(1987). [69] J. W. D. Connolly and A. R. Williams, “Density-functional theory applied to phase transformations in transition-metal alloys,” Phys. Rev. B27 (1983)5169. [70] J. Friedel, “Electronic structure of primary solid solutions in metals,” Adv. Phys.. 3(12)(1954)446. [71] H.N.G. Wadley, X.W. Zhou, and R.A. Johnson, “Electron beam - directed vapor deposition of multifunctional structures,” MRS Sympo. Proc., , 672 Spring Meeting, Sympo. O4(2001) 1. [72] G.C. Fox Solving Problems on Concurrent Processors: General Techniques and Regular Problems Vol 1 and 2.(1988) Prentice- Hall. [73] S. Plimpton and B. Henrickson, “Parallel molecular dynamics algorithms for simulation of molecular systems,” ACS Symp. (1995)592. [74] R. Trobec, M. ˇSterk, M. Praprotnik and D. Janeˇziˇc, “Implementation and evaluation of MPI-based parallel MD program,” Int. Quan. Chem., 84(2001)23. [75] Message Passing Interface Forum. A Message-Passing Interface Standard, (1995) ftp://ftp.mcs.anl.gov. 112 5d. [76] P. S. Pacheco, Parallel Programming with MPI, Morgan Kaufmann Pub. 1997. [77] S. Chapin and J. Worringen, “Operating system,” Int. J. High. Perfor. Comp. Appls., 15(2) (2001)115. [78] A. Apon and M. Baker, “Network topologies,” Int. J. High. Perfor. Comp. Appls., 15(2) (2001)102. [79] http://www.top500.org/ [80] T.G. Lewis and H. El-Rewini, Introduction to Parallel Computing, Prentice-Hall, New York, 1992. [81] http://www-unix.mcs.anl.gov/mpi/mpich1/ [82] G.M. Amdahl, “Validity of the single processor approach to achieving large scale computing capabilities,” AFIPS Conf. Proc. 30 (AFIPS Press), Reston, Va., (1967) 483. [83] F. Shimizu, H. Kimizuka, H. Kaburaki and C. Arakawa, ”Development of parallel molecular dynamics stencil,” Trans. JSCES, Paper No.20020015 (2002) [84] S. N. Foiles, M. 1. Baskes and M. S. Daw, “Embedded-atommethod functions for the fcc metals Cu, Ag, Au, Ni, Pd, Pt, and their alloys,” Phys. Rev. B33(12) 7983(1986). [85] M.R. Hestenes and E. Stiefel, “Methods of conjugate gradients for solving linear systems,” J. Res. Natl. Bur. Stand.49(6)409 (1952). [86] E. Stiefel, “ ¨Uber einige Methoden der Relaxationsrechnung,” Zeitschrift fur Angewandte Mathematik und Physik, 3(1)(1952)1. [87] D.E. Rumelhartand J.L. McClelland, editors. Parallel Distributed Processing: Explorations in the Microstructure of Cognition,MIT Press, MA, 1 1986 [88] L. Vitos, A. V. Ruban, H. L. Skriver and J. Kollar, “The surface energy of metals,” Surf. Sci. 411(1-2)186 (1998). [89] L.T. Kong, H.R. Gong, W.S. Lai and B.X. Liu,“ Construction of an N-body Cu-Ta potential and study of interfacial behavior between immiscible Cu and Ta through molecular dynamics simulation,” J. Phys. Soc. Jpn. 72(1)5 (2003). 113 5d. [90] J.A. Alonso and N. H. March, Electrons in metals and alloys, Academic Press. London (1989). [91] S. Garruchet, O. Politano, J.M. Salazar and T. Montesin, “An empirical method to determine the free surface energy of solids at different deformations and temperature regimes: An application to A1,” Surf. Sci. 586,15 (2005). [92] G.E.P. Box, and M.E. Muller, “A note on the generation of random normal deviates. Annals of Mathematical Statistics,” Ann. of Math. Stat. 29, 610(1958). [93] R.S Wright and M. Sweet, OpenGL SuperBible, 2nd ed., (2000) Waite Group. [94] P. R. Subramanian and D. E. Laughlin, Bulletin of Alloy Phase Diagrams 10, 652(1989). [95] S. Tsukimoto, T. Morita, M. Moriyama, K. Ito and M. Murakami, “Formation of ti diffusion barrier layers in thin Cu(Ti) alloy films,” J. Elec. Mats. 34(5) 592(2005). [96] D.B. Boercker, J.E. Klepeis and C.J. Wu, “Toward improved understanding of aaterial surfaces and interfaces,” Eng. Tech. Rev. Lawrence National Lab. Aug(4)25(1994). [97] J.V Barth, G. Costantini and K. Kern, “Engineering atomic and molecular nanostructures at surfaces,” Nature, 437 (2005)671. [98] Semiconductor Roadmap, http://roadmap.itrs.net/ (2005). [99] M. Traving, G. Schindler, G. Steinlesberger, W. Steinh¨ogl and M. Engelhardt, Semicond. Int., Jul.(2003). [100] T. Karabacaka and T.M. Lu, “Enhanced step coverage by oblique angle physical vapor deposition,” J. Appl. Phys. 97, 124504 (2005) [101] S. P. Ju, C. I. Weng, M. H. Su, J. G. Chang and C. C. Huang, “Molecular dynamics simulation of copper reflow process in the damascene process,” J. Vac. Sci. Techno., B20(3) (2002) 946. [102] X. W. Zhou and H. N. G. Wadley, “Atomistic Simulations of the Vapor Deposition of Ni/Cu/Ni Multilayers: The Effects of Adatom Incident Energy,” J. Appl. Phys. 84(4) 2301(1998). [103] P. Shewmon, Diffusion in Solids, The Minerals, Metals and Materials Society (1989). 114 5d. [104] L. Castoldi, G. Visalli, S. Morin, P. Ferrari, S. Alberici, G. Ottaviani, F. Corni, R. Tonini, C. Nobili and M. Bersani, “Coppertitanium thin film interaction,” Microelect Eng. 76 (2004) 153- 159. [105] H. Ono, N. Nakano and T. Ohta, “diffusion barrier effects of transition-metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W),” Appl. Phys. Lett. 64(12) (1994) 1511. [106] F.Bechstedt, Principles of Surface Physics, Spring-Verlar, Berlin, 2003. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/33270 | - |
dc.description.abstract | 本論文以平行分子動力學模擬,模擬在物理氣相沉積下, 銅金屬原子以濺鍍法方式沉積在導線凹槽內之銅大馬士格製程。 分別研究大馬士格製程中銅金屬沉積在凹槽的形貌及微結構之變化。 所探討之凹槽內擴散阻絕層結構分別為: 鈦單晶六面密堆疊表面指數(0001), 以及鉭單晶體心面之表面指數(100)、 (110)及(111)。在形貌方面 , 主要探討基板溫度、 入射動能及凹槽之展弦比參數下, 對不同阻絕層之材料下之覆蓋百分比。 在微結構方面, 對鉭擴散
阻絕層不同的晶格表面下, 分析銅對鉭擴散阻絕層之沉積紋路及銅原子與擴散阻絕層混合情形。 在分子動力學模擬中 , 所使用之原子間勢能函數為Johnson的解析鄰近嵌入式原子方法。 基於勢能函數轉換不變性的理論下, 來處理本文銅原子與擴散阻絕層材料Cu/Ta及Cu/Ti之合金勢能之計算。 由結果可知 , 增加基材溫度及入射銅原子之動能 ,可提昇覆蓋程度。由於鉭相對於鈦具有較佳熱穩定性及較深的勢能井,銅原子之沉積覆蓋相對較高於以鈦為主之擴散阻絕層。此外 , 鈦之合金的形成相較於鉭為主來得嚴重。 對鉭不同表面指標下,具有表面開口結構之(100)鉭晶格下, 其覆蓋程度相對較差, 這對在高展弦比下所形成之效果更為明顯。對於沉積紋路所形成方向 , 在較高表面能量之擴散阻絕層下, 所形成之紋路較傾向水平,反之則以垂直纖維形成。 此外 , 基材溫度也會影響沉積紋路之方向。 本文使用叢集電腦環境來發展凹槽沉積平行分子動力學模擬:空間分割及原子分割法之平行程式碼, 比較上述平行算則,在不同的叢集電腦系統之適用性及效能。由本文結果, 由於空間分割法在資料交換的次數較低, 其效能大於原子分割法。 | zh_TW |
dc.description.abstract | The trench filling and microstructures of depositing copper atoms on the titanium and tantalum diffusion barrier layers in a damascene process have been studied using parallel molecular dynamics simulation with the embedded atom method (EAM) as interaction potential for the present alloy metal system which is based on the invariance transformation of alloy system. The effects of different process parameters including incident energies of depositing atoms, substrate temperature, the different surface indices of tantalum and the aspect ratio of trench were investigated. The surface indices of tantalum layer considered were (100), (110) and (111) and the aspect ratios were 1, 1.5 and 2, respectively.
The coverage of trench filling is improved as increasing the substrate temperature and incident copper atoms energy. Comparing with titanium and tantalum diffusion barrier layers under the same process parameters, it is found that due to a better thermal stability significant improvement in coverage percentage can be obtained using the tantalum barrier layer, especially at higher substrate temperatures. The enhancement of trench filling is studied in case of (110) and (111) crystal structure of tantalum because there are fewer open structures in sidewall of diffusion barrier layers. In microstructure of trench filling, the alloy formation is serious in the case of titanium than that of tantalum diffusion barrier layers. The orientations of textures are changed with different surface energies and the deposited copper within trench has fiber structure with lower surface energy. To treat a larger system, parallel molecular dynamics simulation is also implemented and we compare the efficiency of different PC cluster computing environments including homogeneous and heterogeneous computer systems. The clarification of the suitability is studied between such systems. In this work, the different parallel schemes are developed including atomic and spatial decomposition methods. Comparing the efficiencies between the two schemes, the spatial decomposition performs better in this work. | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T04:32:06Z (GMT). No. of bitstreams: 1 ntu-95-D87522002-1.pdf: 22076645 bytes, checksum: 46afb5625c6fde704a57ac0a5320fefa (MD5) Previous issue date: 2006 | en |
dc.description.tableofcontents | 1 緒論
1.1 引言 . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2 大馬士革製程. . . . . . . . . . . . . . . . . . . 2 1.3 研究動機. . . . . . . . . . . . . . . . . . . . . . 4 1.4 文獻回顧 . . . . . . . . . . . . . . . . . . . . 5 1.5 …本文研究範圍. . . . . . . . . . . . . . . . 8 2 分子動力學模擬 2.1 歷史回顧. . . . . . . . . . . . . . . . . . . . . . 10 2.2 理論背景. . . . . . . . . . . . . . . . . . . . . . 11 2.3 作用勢能函數 . . . . . . . . . . . . . . . . . . . 13 2.4 數值方法. . . . . . . . . . . . . . . . . . . . . . 13 2.5 模擬方法. . . . . . . . . . . . . . . . . . . . . . 15 3 嵌入原子法 3.1 原子勢能理論 . . . . . . . . . . . . . . . . . . . 20 3.2 嵌入原子法 . . . . . . . . . . . . . . . . . . . . 21 3.3 Johnson嵌入原子法 . . . . . . . . . . . . . . . 23 4 平行分子動力學模擬 4.1 平行演算法. . . . . . . . . . . . . . . . . . . . 33 4.2 系統配置 . . . . . . . . . . . . . . . . . . . . . 36 4.3 效能分析. . . . . . . . . . . . . . . . . . . . . . 38 5.模擬模式 5.1 作用勢能模式. . . . . . . . . . . . . . . . . . . 47 5.2 表面能量之計算. . . . . . . . . . . . . . . . . . 50 5.3 徑向密度分佈函數. . . . . . . . . . . . . . . . . 52 5.4 導線凹槽沉積模式. . . . . . . . . . . . . . . . . 54 6 導線沉積模擬結果與討論 6.1 鈦擴散阻絕層沉積形貌. . . . . . . . . . . . . . . 59 6.2 鉭擴散阻絕層. . . . . . . . . . . . . . . . . . . 67 6.3 鉭擴散阻絕層(110)及(111)表面 . . . . . . . . 76 6.4 鉭擴散阻絕層高展弦比銅之沉積. . . . . . . . . . . 85 6.5 導線沉積微結構. . . . . . . . . . . . . . . . . . 95 7 結論與展望 7.1 結論 . . . . . . . . . . . . . . . . . . . . . . . 104 7.2 展望 . . . . . . . . . . . . . . . . . . . . . . . 105 附錄A ...................................116 附錄B ...................................119 附錄 C ..................................121 | |
dc.language.iso | zh-TW | |
dc.title | 分子動力學模擬於大馬士革製程中銅沉積與微結構之研究 | zh_TW |
dc.title | Study on Trench-Filling and Microstructure of Copper Damascene Process via Molecular Dynamics Simulation | en |
dc.type | Thesis | |
dc.date.schoolyear | 94-2 | |
dc.description.degree | 博士 | |
dc.contributor.coadvisor | 楊照彥 | |
dc.contributor.oralexamcommittee | 顏瑞和,楊瑞珍,黃吉川,宋齊有,吳宗信 | |
dc.subject.keyword | 大馬士革製程,擴散阻絕層,平行分子動力學模擬, | zh_TW |
dc.subject.keyword | Damascene process,diffusion barrier layer,parallel molecular dynamics simulation, | en |
dc.relation.page | 121 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2006-07-21 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 機械工程學研究所 | zh_TW |
顯示於系所單位: | 機械工程學系 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-95-1.pdf 目前未授權公開取用 | 21.56 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。