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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 楊志忠 | |
dc.contributor.author | Horng-Shyang Chen | en |
dc.contributor.author | 陳鴻祥 | zh_TW |
dc.date.accessioned | 2021-06-13T04:21:25Z | - |
dc.date.available | 2006-07-27 | |
dc.date.copyright | 2006-07-27 | |
dc.date.issued | 2006 | |
dc.date.submitted | 2006-07-21 | |
dc.identifier.citation | 1-1. I. Ozden, E. Makarona, A. V. Nurmikko, T. Takeuchi, and M. Krames, “A dual-wavelength indium gallium nitride quantum well light emitting diode,” Appl. Phys. Lett. Vol. 79, No, 16, pp. 2532-2534, Oct. 2001.
1-2. M. Yamada, Y. Narukawa, and T. Mukai, “Phosphor free high-luminous-efficiency white light-emitting diodes composed of InGaN multi-quantum well,” Jpn. J. Appl. Phys. Vol. 41, No. 3A, pp. L246-L248, Mar. 2002. 1-3. Y. D. Qi, H. Liang, W. Tang, Z. D. Lu, and K. M. Lau, “Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy,” J. Crystal Growth Vol. 272, No. 1-4, pp. 333-340, 2004. 1-4. B. Damilano, N. Grandjean, C. Pernot, and J. Massier, ”Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells,” Jpn. J. Appl. Phys. Part 2, Vol. 40, No. 9A/B, pp. L918-L920, Sept. 2001. 1-5. T. N. Oder, K. H. Kim, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 84, 466 (2004). 1-6. J. Shakya, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Enhanced light extraction in III-nitride ultraviolet photonic crystal light-emitting diodes,” Appl. Phys. Lett. 85, 142 (2004). 1-7. WL Barnes, “Electromagnetic crystals for surface plasmon polaritons and the extraction of light from emissive devices,” J. Lightwave Technol., vol. 17, pp. 2170–2182 (1999). 1-8. J. Vu kovi , M. Loncar, and A. Scherer, Surface plasmon enhanced. light-emitting diode,” IEEE J. Quantum Electron., vol. 36, pp. 1131–1144, Oct. 2000”. 1-9. F. Hide, P. Kozodoy, SP DenBaars, and AJ Heeger, “White light from InGaN/conjugated polymer hybrid. light-emitting diodes,” Appl. Phys. Lett. 70, 2664-2666 (1997). 1-10. X. Guo, J.W. Graff, and E.F. Schubert, “Photon Recycling for High Brightness LEDs,” Compound Semiconductors, 6, (4) 1, (May 2000). 1-11. C. H. Chen et. Al. “Nitride-Based Cascade Near White. Light-Emitting Diodes,” IEEE Photon. Tech. Lett. 14, 908(2002) 1-12. Motokazu Yamada, Yukio Narukawa and Takashi Mukai, “Phosphor Free High-Luminous-Efficiency White Light-Emitting DiodesComposed of InGaN Multi-Quantum Well,” Jpn. J. Appl. Phys. Vol. 41 (2002) pp. L 246–L 248, Part 2, No. 3A, 1 March 2002. 1-13. Hao Wu, Xinmin Zhang, Chongfeng Guo, Jian Xu, Mingmei Wu, and Qiang Su, “Three-Band White Light From InGaN-Based Blue LED Chip Precoated With Green/Red Phosphors,” IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 17, NO. 6, JUNE 2005 1-14. D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, IEEE J. Selected Topics Quantum Electron. 8, 310 (2002). 1-15. I. Ozden, E. Makarona, and A. V. Nurmikko, “A dual-wavelength indium gallium nitride quantum well light emitting diode,” Appl. Phys. Lett. 79, 2532 (2001). 1-16. D. Wang , Y. Dikme, S. Jia, P. van Gemmern, Y. C. Lin, K. J. Chen, K. M. Lau , P. van Gemmern, Y. C. Lin, H. Kalisch, R. H. Jansen, and M. Heuken, 'Characterization of GaN grown on patterned Si(111) substrate,' J. of Crystal Growth, vol. 272/1-4 pp. 489-495, 2004 . 1-17. B. Damilano, N. Grandjean, C. Pernot and J. Massier, 'Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells,' Jpn. J. Appl. Phys. 40, L918 (2001). 1-18. C. H. Chen, S. J. Chang, Y. K. Su, J. K. Sheu, J. F. Chen, C. H. Kuo, and Y. C. Lin, 'Nitride-Based cascade near white light-emitting diodes' IEEE Photon. Technol. Lett. 14, 908 (2002). 1-19. M. Yamada, Y. Narukawa, and T. Mukai, “Phosphor free high-luminous-efficiency white light-emitting diodes composed of InGaN multiquantum well,” Jpn. J. Appl. Phys., pt. 2, vol. 41, no. 3A, pp. L246-L248, Mar. 2002. 1-20. T. Mukai, H. Narimatsu, and S. Nakamura, “Amber InGaN-based light-emitting diodes operable at high ambient temperatures,” Jpn. J. Appl. Phys., Part 2 37, L479 (1998). 1-21. Ho and GB Stringfellow, “Solid phase immiscibility in GaInN,” Appl. Phys. Lett. 69, 2701 (1996). 1-22. Mukai, T. “Recent Progress in Group-III Nitride Light-emitting Diodes.' IEEE J. on Selected Topics on Quantum Electronics 8 (2002): 1-23. S. Nakamura and G. Fasol, “The Blue Laser Diode', Springer, Berlin (1997). 1-24. Akihiko Kikuchi, Mizue Kawai, Makoto Tada and Katsumi Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate” J. J. App. Phys. Vol. 43, No. 12A, pp. L1524-L1526, 2004 1-25. P. R. Edwardsa and R. W. Martin, “Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays, ” Appl. Phys. Lett. 85, 4281 (2004). 1-26. A. P. Alivisatos, “Semiconductor Clusters, Nanocrystals, and Quantum Dots,” Science 271, 933 (1996). 1-27. B. O. Dabbousi, J. Rodriguez-Viejo, F. V. Mikulec, J. R. Heine, H. Mattoussi, R. Ober, K. F. Jensen, and M. G. Bawendi, J. Phys. Chem. B 101, 9463 (1997). 1-28. M. Achermann, M. A. Petruska, S. Kos, D. L. Smith, D. D. Koleske, and V. KLImov, Energy-transfer pumping of semiconductor nanocrystals. using an epitaxial quantumwell,” Nature 429, 642 (2004) 1-29. D. M. Yeh, C. F. Huang, H. S. Chen, T. Y. Tang, C. F. Lu, Y. C. Lu, J. J. Huang, C. C. Yang, I. S. Liu and W. F. Su, IEEE Photon. Technol. Lett. 18, March (2006). 1-30. H. Temkin, GL Dolan, MB Panish, and SNG Chu, “Low-temperature photoluminescence from InGaAs/InP quantum wires and boxes,” Appl. Phys. Lett. 50, 413 (1987). 1-31. Hsueh TH, Huang HW, Lai FI, Sheu JK, Chang YH, HC Kuo, Wang SC, “Photoluminescence from In0.3Ga0.7N/GaN. multiple-quantum-well nanorods” , Nanotechnology 16 (4): 448-450 APR 2005 1-32. YD Wang, SJ Chua, S. Tripathy, MS Sander, P. Chen, and CG Fonstad, “High optical quality GaN nanopillar arrays”, Appl. Phys. Lett., 86, 071917-1 - 3, 2005. 1-33. M.Yoshizawa, A.Kikuchi, M.Mori, N.Fujita and K.Kishino, 'Growth of Self-Organized GaN Nanostructures on Al2O3 (0001) by RF-Radical Source Molecular Beam Epitaxy,' Jpn. J. Appl. Phys., Vol.36, No.4B (1997) pp.L459-L462. 1-34. Akihiko Kikuchi, Mizue Kawai, Makoto Tada and Katsumi Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate” J. J. App. Phys. Vol. 43, No. 12A, pp. L1524-L1526, 2004 1-35. Kima H M, Kang T W and Chung K S 2004 J. Ceram. Process. Res. 5 241–3 1-36. S. Park, CM Park, DJ Fu, TW Kang, JE Oh, 'Photoluminescence studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy,' Appl. Phys. Lett. 85, p5718 (2004). 1-37. Ristic J, Calleja E, Trampert A, Fernandez-Garrido S, Rivera C, Jahn U and HK Ploog, 'Columnar AlGa/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam. epitaxy on Si(111),' Phys. Rev. Lett. 94 146102, 2005. 1-38. Sun Y, Cho Y H, Kim H M and Kang T W, 'High efficiency and brightness of blue light emission from dislocation-free InGaN/GaN quantum well nanorod arrays,' Appl. Phys. Lett. 87 093115, 2005. 1-39. M. Yoshizawa et al. 'Growth of Self-Organized GaN Nanostructures on Al2O3(0001) by RF-Radical Source Molecular Beam Epitaxy, ' Jap. J. Appl. Phys. 36, L459 (1997). 2-1. H WShim, Y K Kim, E-K Suh and H J Lee, Semicond. Sci. Technol. 19 (2004) 774–777. 2-2. Katari J E B, Colvin V L and Alivisatos A P 1994 J. Phys. Chem. 98 4109. 2-3. Peng X, Wickham J and Alivisatos A P 1998 J. Am. Chem. Soc. 120 5343. 3-1. I. Ozden, E. Makarona, A. V. Nurmikko, T. Takeuchi, and M. Krames, “A dual-wavelength indium gallium nitride quantum well light emitting diode,” Appl. Phys. Lett. Vol. 79, No, 16, pp. 2532-2534, Oct. 2001. 3-2. M. Yamada, Y. Narukawa, and T. Mukai, “Phosphor free high-luminous-efficiency white light-emitting diodes composed of InGaN multi-quantum well,” Jpn. J. Appl. Phys. Vol. 41, No. 3A, pp. L246-L248, Mar. 2002. 3-3. Y. D. Qi, H. Liang, W. Tang, Z. D. Lu, and K. M. Lau, “Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy,” J. Crystal Growth Vol. 272, No. 1-4, pp. 333-340, 2004. 3-4. B. Damilano, N. Grandjean, C. Pernot, and J. Massier, ”Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells,” Jpn. J. Appl. Phys. Part 2, Vol. 40, No. 9A/B, pp. L918-L920, Sept. 2001. 3-5. A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111) Si substrate,” Jpn. J. Appl. Phys. Vol. 43, No. 12A, pp. L1524-L1526, Nov. 2004. 3-6. M. Achermann, M. A. Petruska, S. Kos, D. L. Smith, D. D. Koleske, and V. I. Klimov, “Energy-transfer pumping of semiconductor nanocrystals using an epitaxial quantumwell ,” Nature Vol. 429, pp. 642-646, June, 2004. 3-7. D. M. Yeh, C. F. Huang, H. S. Chen, T. Y. Tang, C. F. Lu, Y. C. Lu, J. J. Huang, C. C. Yang, I. S. Liu, and W. F. Su, “Control of the Color Contrast of a Polychromatic Light-emitting Device with CdSe/ZnS Nano-crystals on an InGaN/GaN Quantum-well Structure,” IEEE Photon. Technol. Lett. Vol. 18, March 2006. 3-8. S. M. Ting, J. C. Ramer, D. I. Florescu, V. N. Merai, B. E. Albert, A. Parekh, D. S. Lee, D. V. Christini, L. Liu, and E. A. Armour, “Morphological evolution of InGaNÕGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition,” J. Appl. Phys. Vol. 94, No. 3, pp. 1461-1467, Aug. 2003. 3-9. Y. C. Cheng, C. M. Wu, C. C. Yang, G. A. Li, A. Rosenauer, K. J. Ma, S. C. Shi, and L. C. Chen, “Effects of interfacial layers in InGaN/GaN quantum-well structures on their optical and nanostructural properties,“ J. Appl. Phys. Vol. 98, No. 1, pp. 014317-7, July 2005. 4-1. M. Yamada, Y. Narukawa, and T. Mukai, Jpn. J. Appl. Phys. 41, L246 (2002). 4-2. B. Damilano, N. Grandjean, C. Pernot, and J. Massier, Jpn. J. Appl. Phys. 40, L918 (2001). 4-3. D. Xiao, K. W. Kim, S. M. Bedair, and J. M. Zavada, Appl. Phys. Lett. 84, 672 (2004). 4-4. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, III, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi., Appl. Phys. Lett. 80, 3967 (2002). 4-5. I. Ozden, E. Makarona, A. V. Nurmikko, T. Takeuchi, and M. Krames, Appl. Phys. Lett. 79, 2532 (2001). 4-6. Y. D. Qi, H. Liang, W. Tang, Z. D. Lu, and K. M. Lau, J. Crystal Growth 272, 333 (2004). 4-7. M. Hao, H. Ishikawa, T. Egawa, C. L. Shao, and T. Jimbo, Appl. Phys. Lett. 82, 4702 (2003). 4-8. S. Fujita, M. Funato, D. C. Park, Y. Ikenaga, and S. Fujita, MRS Internet J. Nitride Semicond. Res. 4S1, G6.31 (1999). 4-9. H. Nakayama, P. Hacke, and M. R. H. Khan, Jpn. J. Appl. Phys. 35, L282 (1996). 4-10. K. S. Kim, M. G. Cheong, C. H. Hong, G. M. Yang, K. Y. Lim, E. K. Suh, and H. J. Lee, Appl. Phys. Lett. 76, 1149 (2000). 4-11. H. W. Choi, M. D. Dawson, P. R. Edwards, and R. W. Martin, Appl. Phys. Lett. 83, 4483 (2003). 4-12. H. W. Choi, C. W. Jeon, M. D. Dawson, P. R. Edwards, and R. W. Martin, IEEE Photon. Technol. Lett. 15, 510 (2003). 4-13. S. X. Jin, J. Shakya, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 78, 3532 (2001). 4-14. S. X. Jin, J. Li, J. Z. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 76, 631 (2000). 4-15. R. A. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, H. Tang, A. Botchkarev, W. Kim, and H. Morkoç, Appl. Phys. Lett. 71, 2898 (1997). 4-16. S. M. Ting, J. C. Ramer, D. I. Florescu, V. N. Merai, B. E. Albert, A. Parekh, D. S. Lee, D. V. Christini, L. Liu, and E. A. Armour, J. Appl. Phys. 94, 1461 (2003). 5-1. M. Yamada, Y. Narukawa, and T. Mukai, “Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well,“ Jpn. J. Appl. Phys. Vol. 41, pp. L 246–L 248, Part 2, No. 3A, Mar. 2002. 5-2. B. Damilano, N. Grandjean, C. Pernot, and J. Massier, “Analysis of Coaxial Periodic Dielectric Waveguides by an Extension of Floquet's Theorem,” Jpn. J. Appl. Phys. Part 1, No. 2A, Vol. 40, L918, 15 Feb. 2001. 5-3. D. Xiao, K. W. Kim, S. M. Bedair, and J. M. Zavada, “Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures,” Appl. Phys. Lett. Vol 84, pp. 672-674, Feb. 2004. 5-4. I. Ozden, E. Makarona, A. V. Nurmikko, T. Takeuchi, and M. Krames, “A dual-wavelength indium gallium nitride quantum well light emitting diode,” Appl. Phys. Lett. Vol. 79, pp. 2532-2534, Oct. 2001. 5-5. Y. D. Qi, H. Liang, W. Tang, Z. D. Lu, and K. M. Lau, “Dual wavelength emission InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy,” J. of Crystal Growth, vol. 272/1-4 pp. 333-340, 2004. 5-6. J. Ristic, E. Calleja, A. Trampert, S. Fernandez-Garrido, C. Rivera, U. Jahn, and K. H. Ploog, “Columnar AlGaN/GaN Nanocavities with AlN/GaN Bragg Reflectors Grown by Molecular Beam Epitaxy on Si(111),” Phys. Rev. Lett. Vol. 94, pp. 146102, Apr. 2005. 5-7. Y. Sun, Y. H. Cho, H. M. Kim, and T. W. Kang, “High efficiency and brightness of blue light emission from dislocation-free InGaN/GaN quantum well nanorod arrays,” Appl. Phys. Lett. Vol. 87, pp. 093115-1-3, Aug. 2005. 5-8. A. Kikuchi, M. Kawai, M. Tada and K. Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate,” Jpn. J. Appl. Phys. Vol. 43, No. 12A, pp. L1524-L1526, Nov. 2004. 5-9. T. Akasaka, H. Gotoh, T. Saito, and T. Makimoto, “High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers,” Appl. Phys. Lett. Vol. 85, No. 15, pp. 3089-3091, Oct. 2004. 5-10. T. Akasaka, H. Gotoh, H. Nakano, and T. Makimoto, “Blue-purplish InGaN quantum wells with shallow depth of exciton localization,” Appl. Phys. Lett. Vol. 86, pp. 191920-1-3, May 2005. 5-11. S. M. Ting, J. C. Ramer, D. I. Florescu, V. N. Merai, B. E. Albert, A. Parekh, D. S. Lee, D. Lu, D. V. Christini, L. Liu, and E. A. Armour, “Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition,” J. Appl. Phys. Vol. 94, pp. 1461-1467, May 2003. 5-12. Ho and G. B. Stringfellow, “Solid phase immiscibility in GaInN,” Appl. Phys. Lett. Vol. 69, pp. 2701-2703, Oct. 1996. 5-13. Y. S. Lin, K. J. Ma, C. Hsu, Y. Y. Chung, C. W. Liu, S. W. Feng, Y. C. Cheng, M. H. Mao, C. C. Yang, H. W. Chuang, C. T. Kuo, J. S. Tsang, and T. E. Weirich, “Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells,” Appl. Phys. Lett. Vol. 80, pp. 2571-2573, Apr. 2002. 5-14. Y. C. Cheng, E. C. Lin, C. M. Wu, C. C. Yang, and J. R. Yang, “Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions,” Appl. Phys. Lett. Vol. 84, pp. 2506-2508, Apr. 2004. 5-15. K. S. Kim, M. G. Cheong, C. H. Hong, G. M. Yang, K. Y. Lim, E. K. Suh, and H. J. Lee, “Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. Vol. 76, pp. 1149-1151, Feb. 2000. 6-1. Temkin H, Dolan G J, Panish M B and Chu S N G 1987 Appl. Phys. Lett. 50 413–5 6-2. Hsueh T H, Huang H W, Lai F I, Sheu J K, Chang Y H, Kuo H C and Wang S C 2005 Nanotechnology 16 448–50 6-3. Wang Y D, Chua S J, Tripathy S, Sander M S, Chen P and Fonstad C G 2005 Appl. Phys. Lett. 86 071917 6-4. Yoshizawa M, Kikuchi A, Mori M, Fujita N and Kishino K 1997 Japan. J. Appl. Phys. 36 L459–62 6-5. Kikuchi A, Kawai M, Tada M and Kishino K 2004 Japan. J. Appl. Phys. 43 L1524–6 6-6. Kima H M, Kang T W and Chung K S 2004 J. Ceram. Process. Res. 5 241–3 6-7. Park Y S, Park C M, Fu D J, Kang T W and Oh J E 2004 Appl. Phys. Lett. 85 5718–20 6-8. Ristic J, Calleja E, Trampert A, Fernandez-Garrido S, Rivera C, Jahn U and Ploog K H 2005 Phys. Rev. Lett. 94 146102 6-9. Sun Y, Cho Y H, Kim H M and Kang T W 2005 Appl. Phys. Lett. 87 093115 6-10. Riblet P, Hirayama H, Kinoshita A, Hirata A, Sugano T and Aoyagi Y 1999 Appl. Phys. Lett. 75 2241 6-11. Choi C K, Kwon Y M, Little B D, Gainer G H, Song J J and Chang Y C 2001 Phys. Rev. B 64 245339 6-12. Lin Y S et al 2002 Appl. Phys. Lett. 80 2571 6-13. Feng S W, Cheng Y C, Chung Y Y, Yang C C, Lin Y S, Hsu C, Ma K J and Chyi J I 2002 J. Appl. Phys. 92 4441 6-14. Chen M K, Cheng Y C, Chen J Y, Wu C M, Yang C C, Ma K J, Yang J R and Rosenauer A 2005 J. Cryst. Growth 279/1-2 55 6-15. Cheng Y C et al 2004 Appl. Phys. Lett. 84 2506 6-16. Oliver R A, Andrew G, Briggs D, Kappers M J, Humphreys C J, Yasin S, Rice J H, Smith J D and Taylor R A 2003 Appl. Phys. Lett. 83 755 6-17. Kim H J et al 2004 J. Cryst. Growth 269 95 6-18. Chuang S L 1996 IEEE J. Sel. Top. Quantum Electron. 32 1791 6-19. Chen L, Yin A, Im J S, Nurmikko A V, Xu J M and Han J 2001 Phys. Status Solidi a 188 135 6-20. Lin Y S, Ma K J, Hsu C, Feng S W, Cheng Y C, Liao C C, Yang C C, Chuo C C, Lee C M and Chyi J I 2000 Appl. Phys. Lett. 77 2988 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/32997 | - |
dc.description.abstract | 在本研究中我們有系統的探討氮化銦鎵�氮化鎵發光二極體的元件設計及其光學特性。首先我們以雙波長量子井結構,製做出藍綠光雙波長發光二極體,並由其所發藍光特性激發鎘化硒/硫化鋅之奈米晶體產生紅色光,而混合出發白光的發光元件。
為進一步瞭解並改善雙波長發光二極體因電洞移動率較低,而使下層量子井發光效率減弱的因素,我們進設計了微米結構的發光二極體。在其表面均勻覆蓋電極,而使得在注入電流時主動層結合介面溫度提高,電洞移動率亦被提高,進而增加電子電洞結合放光的效率。同時,也使得在下層主動層的發光強度被提昇。 另外,我們在成長氮銦化鎵�氮化鎵多重量子井前,預先長一層低濃度的氮化銦鎵量子井,來逹到預施應力之效果,以讓上層的量子井內銦成份增加,而使得波長可紅移約一百奈米,我們以此晶片成功製作橘紅光的發光二極體。 此外為能充份瞭解氮銦化鎵�氮化鎵多重量子井其應力釋放的特性,我們用電子束顯影技術及乾式蝕刻方式,製做直徑約十奈米的氮銦化鎵�氮化鎵多重量子井奈米柱。在不同直徑的奈米柱頻譜改變關係中,顯示出除了量子侷限的影響之外,應力的釋放對氮銦化鎵�氮化鎵多重量子井之光學性有很大的影響。 | zh_TW |
dc.description.abstract | In this research, we systematically investigate of InGaN/GaN quantum-well (QW) light-emitting diodes (LEDs) design and optics characteristics. First, we have grown and process a blue/green two-wavelength LED based on the mixture of two kinds of QW in epitaxial growth. We then coat CdSe/ZnS nano-crystals on the top of the two-wavelength LED for converting blue photons into red light. By coating such nano-crystals, the device emitted blue, green, and red lights for white-light generation.
Also, we have fabricated blue/green two-wavelength, InGaN/GaN QW, flip-chip micro-LEDs of different mesa sizes by stacking different QWs. It is found that the blue-over-green contrast ratio of such an LED increased with the mesa size. The relatively stronger blue intensity in a device of larger mesa area is due to its higher operation junction temperature. For the emissions of yellow, orange, and red colors in InGaN/GaN QW LEDs, higher indium contents must be incorporated. Because of the 11 % lattice mismatch between GaN and InN, the miscibility between the two binary compounds becomes difficult when the indium content is higher than 15 % or so. We have demonstrated the operations of an orange and a red LED, which are fabricated with a pre-strained InGaN/GaN QW epi-structure. The pre-strain condition is created by growing a low-indium QW before the growth of five high-indium QWs. Finally, nanoposts with diameter down to around 10 nm are fabricated using electron-beam lithography and ICP RIE on an InGaN/GaN QW structure. Significant blue shifts in the PL spectra are observed. The blue shift range increases with decreasing post diameter. For the nanoposts with significant strain relaxation, the PL spectral peak positions became less sensitive to carrier screening. From the temperature-dependent PL and TRPL measurements and a numerical calculation of the effect of quantum confinement, we conclude that the optical behaviors of the nanoposts are mainly controlled by the combined effect of 3D quantum confinement and strain relaxation. | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T04:21:25Z (GMT). No. of bitstreams: 1 ntu-95-D89941006-1.pdf: 2538883 bytes, checksum: 3b6d6702ea96f9967a9f76bfb5f37aec (MD5) Previous issue date: 2006 | en |
dc.description.tableofcontents | Contents
中文摘要……………………………………………….i Abstract………………………………………………..ii Contests………………….………………………….….v Chapter 1 Introduction 1.1 Solid-state Lighting……………..…………………….….1 1.2 Phosphor-free Nitride Light-emitting Diodes..…..………5 1.3 CdSe/ZnS Nano-Particles...................................................8 1.4 Nitride Nano-posts……………..……………….………10 1.5 Research Motivations……………….…….…………….13 1.6 Thesis Organization……………………………..………15 References………...…………………………………..…….17 Chapter 2 Fabrication and Characterization Methods 2.1 Fabrication Procedures of Light-emitting Diodes……...29 2.2 Fabrication Procedures of Nitride Nano-posts…………33 2.3 Experimental Setup for the Optical Characterization Light-emitting Diodes…………….……………………35 2.4 Experimental Setup for the Optical Characterization of Nano-posts…………………………………..………….36 References………………………………………...………..38 Chapter 3 White-light Generation with CdSe/ZnS Nano-crystals Coated on an InGaN/GaN Quantum-well Blue/green Two-wavelength Light-emitting Diode 3.1 Introduction…………………………………….………50 3.2 Epitaxial Growth and Device Process………….………52 3.3 Optical Characterization Results……………………….55 3.4 Summary……………………………………...………..58 References………………………………………………….59 Chapter 4 Contact Size Dependent Color Contrast in Flip-chip Blue/green Two-color InGaN/GaN Multi-quantum-well Light-emitting Diodes 4.1 Introduction…………………………………………….67 4.2 Epitaxial Growth and Device Process………………….69 4.3 Optical Characterization Results.....................................72 4.4 Discussions………………..……………………………74 4.5 Summary………………….……………………………75 References………………………….………………………76 Chapter 5 Orange-red Light-emitting Diodes Based on a Pre-strained InGaN/GaN Quantum-well Epi-structure 5.1 Introduction……………………...……………………..83 5.2 Epi-structure Growth and Device Process………..……85 5.3 Device Characteristics…………………………….……87 5.4 Summary…………………………………...…………..90 References………………………………………………….91 Chapter 6 Strain Relaxation and Quantum Confinement in InGaN/GaN Nanoposts 6.1 Introduction………………………….…………………99 6.2 Fabrication Procedures and Optical Characterization Methods………………………………...………….…103 6.3 Optical Characterization Results……………….…….105 6.4 Discussion…………………………...………………..109 6.5 Summary…………………………...…………………114 References………………………………….……………..115 Chapter 7 Conclusions............................................................................125 Publication List………………………………...............………..127 | |
dc.language.iso | en | |
dc.title | 基於氮化鎵/氮化銦鎵奈米結構之發光元件 | zh_TW |
dc.title | Light-emitting Devices Based on InGaN/GaN Nano-structures | en |
dc.type | Thesis | |
dc.date.schoolyear | 94-2 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 李君活,黃升龍,李允立,黃建彰,彭隆瀚,江衍偉,林恭如 | |
dc.subject.keyword | 白光發光二極體,硒化鎘/硫化鋅,氮化鎵/氮化銦鎵,量子侷限效應,奈米柱, | zh_TW |
dc.subject.keyword | White light LED,CdSe/ZnS,GaN/InGaN,quantum-confined Stark effect,nano-post, | en |
dc.relation.page | 132 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2006-07-24 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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