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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.advisor | 林浩雄 | |
dc.contributor.author | Jyun-Ping Wang | en |
dc.contributor.author | 王俊評 | zh_TW |
dc.date.accessioned | 2021-06-13T03:26:15Z | - |
dc.date.available | 2006-07-31 | |
dc.date.copyright | 2006-07-31 | |
dc.date.issued | 2006 | |
dc.date.submitted | 2006-07-27 | |
dc.identifier.citation | [1]Kurt Nassau, “Color for science,Art and Technology, ”ELESEVIER, 1998
[2]Daniel Malacara, “Color Vision and Colorimetry:THEORY AND APPLICATIONS, ”SPIE PRESS, 2002. [3]G.Wyszecki,W.S.Stiles,“Color Science:Concepts and Methods, Quantitative Data,and Formulae 2nd ed., ”John Wiley& Sons, 2000. [4]Luminosity,“CIE(1924)Photopic V(λ),”http://cvision.ucsd.edu/ [5]Luminosity,“CIE(1954)Scotopic V’(λ)”http://cvision.ucsd.edu/ [6]CIE,“Commission Internationale de l’Eclairage Proceedings, 1924,”Cambridge University Press,1926 [7]CIE,“CIE Proceedings, Vol. 1,Sec 4; Vol 3,pp.37, ”Bureau Central de la CIE, Paris [8]大田 登,“基礎色彩再現工程, ”全華科技(2003) [9]J. W. Hill,“US6396040 Ambient Light Sensor,”Control Devices, Inc., 2002. [10]G. W. Lee,“Ambient Light Sensing and Safety for In-Vehicle Displays,”TAOS Inc.,2003. [11]G. W. Lee,“TSL2550 Ambient Light Sensor White Paper Extending Display Life,”TAOS Inc.,2003 [12]OSRAM Application Note,“Ambient Light Sensor SFH3410 and SFH 3710,”Nov.2004. [13]Agilent Application Note 1365,“General Application Guide for HSDL-9000,”May. 2003. [14]Agilent White Paper,“Ambient Light Sensing Using Agilent HSDL-9000,”May. 2003. [15]Agilent Data Sheet,“HDSL-9001 Miniature Surface-Mount Ambient Light Photo Sensor,”Jan. 2005. [16]OSRAM Data Sheet,“Silicon NPN Phototransistor with Vλ Characteristics SFH 3710,” Dec. 2002. [17]Microsemi Dara Sheet,“LX1972 Ambient Light Detector,”Nov. 2004 [18]TAOS Data Sheet,“TSL2563 Ambient Light Sensor,”Feb. 2006. [19]吳俊逸,“類人眼光偵測器之設計模擬與製程,”台灣大學光電所, 2005. [20]Hong Xiao,“Introduction to Semiconductor Manufacturing Technology, ”Prentice Hall, 2001. [21]X. Y. GONG, T. YAMAGUCHI, H. KAN, T. MAKINO, T. IIDA, T. KATO, M, AOYAMA, Y. SUZUKI, N. SANADA, Y. FUKUDA and M. KUMAGAWA,“Influence of Sulphidation Treatment on the Per formance of Mid-Infrared InAsPSb/InAs Detectors” J. Appl. Phys., vol. 37, part 1, no. 1, pp.55-58, Jan 1998. [22]http://www.chimei.com.tw/tw/products/product.asp?pid={17A849E1-D89B-419A-B4AC-AB3B4D7278F5} [23]Silicon photo-detector Responsivity spectrum,“Silicon photo-detector, 818UV in Newport Coporation Detector Calibration Report,”Newport Co.,pp.1, 1992. [24]V. Swaminathan,“Materials Aspects of GaAs and InP Based Structures,”Prentice Hall, 1991. [25]S.Adachi,“GaAs, AlAs, and AlxGa1-xAs:Material parameters for use in research and device applications ”J. Appl. Phys. R1-R26., 1985. [26]S. Adachi,“Properties of Aluminium Gallium Arsenide,”London, IEE., 1993 [27]Commission Internationale de l’Eclairage (1987) Methods of characterizing illuminance metersand luminance meters: Performance, characteristics and specifications. CIE 69-1987. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/31967 | - |
dc.description.abstract | 本研究利用多層AlxGa1-xAs結構,來實現反應頻譜趨近CIE國際照明協會制訂的視見函數V(λ)的光偵測器元件。我們以AlxGa1-xAs PIN結構作為主要的吸收層,其x成分在0.53~0.61。在PIN結構中我們加入低x的連續成分漸變層或步階成分變化層以修整長波長的反應頻譜譜型。而在400nm∼600nm的波段我們利用Al0.73Ga0.27As/GaAs結構作為濾波層以濾除過強的響應。完成的最佳偵測器元件其頻譜峰值為552nm,而整體反應頻譜與CIE視見函數的f’1誤差為19.4%。此外我們也將彩色光阻塗佈在不同結構參數的偵測器元件之上,最佳元件的頻譜峰值為556nm、與CIE視見函數的f’1誤差僅有7.5%。 | zh_TW |
dc.description.abstract | The purpose of this study is using AlGaAs multi-layer structures to realize a photometric photodetector with a responsivity spectrum match to the CIE standard photopic luminous function. These structures used an AlxGa1-xAs PIN junction to absorb the visible light. The x value is from 0.53 to 0.61. A compositional linear-graded or step-graded layer of AlGaAs with low Al content was inserted into the PIN junction to tailor the spectrum in the long wavelength region to the luminous function. For the short wavelength region, we used an Al0.73Ga0.27As/GaAs composite layer as a filtering layer to reduce the response so as to fit the luminous function. The best device has a peak wavelength of 552nm, and the CIE f’1 error of the overall responsivity is 19.4%. We also made use of the color resist to adjust the responsivity spectrum of the photodetectors. The CIE f’1 error of the best resist-coated device is only 7.5% with a peak wavelength of 556nm. | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T03:26:15Z (GMT). No. of bitstreams: 1 ntu-95-R93943151-1.pdf: 910103 bytes, checksum: b6b9284604e70ece9225483cd5e47061 (MD5) Previous issue date: 2006 | en |
dc.description.tableofcontents | 中文摘要 I
Abstract III 目錄 V 附表索引 VII 附圖索引 IX 第一章 簡介 1 1.1 人眼反應頻譜特性 1 1.2 色彩學學說 2 1.3 類人眼光偵測器的優點與作法 4 1.4論文架構 8 第二章 類人眼光偵測器實作 18 2.1 偵測器結構的成長 18 2.2 偵測器製程 18 2.3 彩色光阻製程條件測試 24 2.4 量測系統設置 30 2.4.1 電壓電流量測 30 2.4.2 反應度量測 31 2.4.3 穿透譜量測 32 2.4.4 偏角度量測 33 2.4.5 線性度量測 34 第三章 實驗結果與討論 44 3.1 加入Al0.73Ga0.27As 濾波層的效果 44 3.2 中性層成分改變的影響 45 3.3 主成分Al0.61Ga0.39As光偵測器的量測結果與特性 46 3.4 彩色光阻的效果 51 3.5 樣品R2529的各種電氣特性測試 52 3.6 誤差率 54 第四章 結論 73 參考文獻 74 | |
dc.language.iso | zh-TW | |
dc.title | 以砷化鋁鎵實現之類人眼光偵測器 | zh_TW |
dc.title | Processing and characterization of ambient light detector implemented by AlGaAs | en |
dc.type | Thesis | |
dc.date.schoolyear | 94-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 涂元光,江永欣,李君浩 | |
dc.subject.keyword | 光偵測器,砷化鋁鎵,彩色光阻, | zh_TW |
dc.subject.keyword | photodetector,AlGaAs,color filter, | en |
dc.relation.page | 76 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2006-07-29 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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