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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/31610完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 張家歐 | |
| dc.contributor.author | chau-shiung shiu | en |
| dc.contributor.author | 許朝雄 | zh_TW |
| dc.date.accessioned | 2021-06-13T03:15:47Z | - |
| dc.date.available | 2008-08-03 | |
| dc.date.copyright | 2006-08-03 | |
| dc.date.issued | 2006 | |
| dc.date.submitted | 2006-07-31 | |
| dc.identifier.citation | 參考文獻
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Oguchi, “Uniform Groove-Depths in (110) Si Anisotropic Etching by Ultrasonic Waves and Application to Accelerometer Fabrication,” Sensors and Actuators A, Vol. 50, 1995, pp. 93-98. [18]Boris W. Batterman, “Hillocks, Pits, and Etch Rate in Germanium Crystals,” Journal of Applied Physics, Vol. 28, NO. 11, 1957, pp.1236-1241. [19]C.R. Tellier, and A. Brahim-Bounab, “Anisotropic Etching of Silicon Crystal in KOH Solution, Part Ⅰ,” Journal of Materials Science, Vol. 29, 1994, pp. 5953-5971. [20]Kazuo Sato, Mitsuhiro Shikida and Yoshihiro Matsu- shima, ”Characterization of Anisotropic Etching Properties of Single-Crystal Silicon: Effect of KOH concentration on Etching Profiles,” Proceedings of the 1997 10th Annual International Workshop on Micro Electro Mechanical Systems, MEMS Nagoya, Japan, Jan 26-30 pp. 406-411. [21]H. Seidel, L. Cseprgl, A. Heuberger, and H. Boumg rtel, “Anisotropic Etching of Crystalline Silicon in Alkalne Solutions,” Journal of the Electrochemical Society, Vol. 137, NO. 11, 1990, pp. 3612-3632. [22]D. Zielke and J. Frühauf, “Determination of Rates for Orientation-Dependent Etching,” Sensors and Actuators A, Vol. 48, 1995, pp. 151-156. [23]Irena Zubel and Irena Iarycka, 'Silicon Anisotropic Etching in Alkaline Solution Ⅰ,' Sensors and Actuators A, Vol. 70, 1998, pp. 250-259. [24]Irena Zubel, 'Silicon Anisotropic Etching in Alkaline Solution Ⅱ,' Sensors and Actuators A, Vol. 70, 1998, pp. 260-268. [25]Egon Herr and Henry Baltes, “KOH Etch Rates of High-Index Planes From Mechanically Prepared Silicon Crystals,” 1991 International Conference on Solid-State Sensors and Actuators San Francisco, CA, USA, 1991, pp. 807-810. [26]Seiji Hirai, Yuji Furukawa, and Munehiko Yokogawa, 'An Analysis of Anisotropic Etching Process,”精密工學會誌(日本), Vol. 59, NO. 5, 1993, pp. 815-820. [27]Kirt R. Wiliams and Richard S. Muller, “Etch Rates for Micromachining Processing,” Journal of Microelectrome- chanical Systems, Vol. 5. No. 4, 1996, pp. 256-269. [28] Carlo H. Séquin, 'Computer Simulation of Anisotropic Crystal Etching,” 1991 International Conference on Solid-State Sensors and Actuators San Francisco, CA, USA, 1991, pp. 800-806. [29] Carlo H. Séquin, 'Computer Simulation of Anisotropic Crystal Etching,” Sensors and Actuators A, Vol. 34, 1992, pp. 225-241. [30] J. S. Danel and G. Delapierre, “Anisotropic Crystal Etching: A Simulation Program” ,Sensors and Actuators A, Vol. 31, 1992, pp. 267-274. [31]張簡文添,”單晶矽濕式蝕刻理論”, 國立台灣大學博士論文,2000. [32] 李梓瑋, ”外凸角隅濕蝕刻行為之研究”, 國立台灣大學碩士論文,2004. [33] F.C. Frank and M. B. Ives, ”Orientation –dependent dissolution of germanium”, Journal of Applied Physics, Vol.31, NO.11, p.1996, 1960 [34] H Schröder and E Obermeier, “A new model for Si{100} convex corner undercutting anisotropic KOH etching,” J. Micromech. 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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/31610 | - |
| dc.description.abstract | 自前人研究蝕刻速率的文獻中發現利用外凸或是內凹角隅的底切行為來量測蝕刻速率並沒有正確求出底切面的米勒指標且缺乏嚴謹的理論基礎來計算蝕刻速率，因此單晶矽非等向性蝕刻之矽(110)晶格面蝕刻機制之研究上，到目前仍未有令人滿意的答案。
本文主要是以外凸角隅可量測出蝕刻速率較快的晶格面為主，文中討論濕式蝕刻速率理論，以二維蝕刻理論為中心，利用幾何方法來探討基本的蝕刻長度變化率與蝕刻速率的關係，並且提出一完整步驟來量測蝕刻速率之方法，只需量測實驗的幾何夾角與交線的角隅蝕刻距離，再加上簡單的向量運算並以立體投影圖和沃夫圖的輔助，即可標定出正確角隅底切面的米勒指標，甚至還可以計算出前人研究的文獻中無法判定之高米勒指標。 在量測蝕刻速率的實驗上，本文以(110)矽晶圓在相同的蝕刻時間下使用數種蝕刻溫度（70℃、80℃）以及KOH濃度（30%、40%）和有無摻入修飾劑（IPA）之下進行了一系列的實驗，並詳細的紀錄其中的蝕刻交線距離、角度，和實驗後量測計算得到的角隅底切面之米勒指標和蝕刻速率，以作為KOH蝕刻製程的資料庫。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2021-06-13T03:15:47Z (GMT). No. of bitstreams: 1 ntu-95-R93543046-1.pdf: 3195135 bytes, checksum: 886933b0fe468e7445e6db7336c0ceeb (MD5) Previous issue date: 2006 | en |
| dc.description.tableofcontents | 目錄
第一章 導論…………………………………………………………1 1-1文獻回顧…………………………………………………………1 1-2研究動機…………………………………………………………5 1-3論文方向…………………………………………………………6 1-4 論文架構 ………………………………………………………7 第二章 蝕刻速率理論 ……………………………………………13 2-1 基本概念 ………………………………………………………13 2-2 蝕刻長度變化率與蝕刻速率的關係 …………………………14 2-2-1 內凹角隅的長度變化率與蝕刻速率的關係 ………………15 2-2-2 外凸角隅的長度變化率 ……………………………………17 2-3研究方法 ………………………………………………………19 2-3-1 應用外凸角隅量測交線移動速率 ………………………19 2-3-2 使用立體投影圖與沃夫座標圖來決定側牆的米勒指標 …20 2-3-3 決定量測蝕刻速率之晶格面的米勒指標 ………………21 2-3-4 決定晶格面的蝕刻速率 ………………………………23 第三章 實驗… ……………………………………………………35 3-1 蝕刻製程規劃 …………………………………………………35 3-2 蝕刻製程流程與步驟 …………………………………………37 3-2-1 實驗流程 ……………………………………………………37 3-2-2 實驗步驟 ……………………………………………………38 第四章 實驗觀測與結果分析……………………………………41 4-1 KOH為蝕刻溶液蝕刻一小時之結果與分析……………………42 4-2 KOH+IPA為蝕刻溶液蝕刻一小時之結果與分析………………49 第五章 結論 ……………………………………………………111 參考文獻 ……………………………………………………………112 附錄 …………………………………………………………………115 附錄A 米勒指標與表示方法 ………………………………………115 附錄B Measurement tools…………………………………………117 | |
| dc.language.iso | zh-TW | |
| dc.subject | (110)單晶矽 | zh_TW |
| dc.subject | 蝕刻速率 | zh_TW |
| dc.subject | 外凸角隅 | zh_TW |
| dc.subject | undercut convex corner | en |
| dc.subject | Si(110) | en |
| dc.subject | etch rate | en |
| dc.title | 應用(110)單晶矽之外凸角隅量測單晶矽蝕刻速率 | zh_TW |
| dc.title | Measurement of etch rate through applicatity of Si(110) undercut convex corner | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 94-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.coadvisor | 張簡文添 | |
| dc.contributor.oralexamcommittee | 周傳心,謝發華 | |
| dc.subject.keyword | (110)單晶矽,外凸角隅,蝕刻速率, | zh_TW |
| dc.subject.keyword | etch rate,Si(110),undercut convex corner, | en |
| dc.relation.page | 117 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2006-07-31 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 應用力學研究所 | zh_TW |
| 顯示於系所單位： | 應用力學研究所 | |
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