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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 孫啟光(Chi-Kuang Sun) | |
dc.contributor.author | Shih-Ze Sun | en |
dc.contributor.author | 孫世澤 | zh_TW |
dc.date.accessioned | 2021-06-13T03:14:37Z | - |
dc.date.available | 2006-08-31 | |
dc.date.copyright | 2006-08-03 | |
dc.date.issued | 2006 | |
dc.date.submitted | 2006-08-01 | |
dc.identifier.citation | Chapter 1
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B, vol. 33(6), pp.4129-4135, 1986. [3.9] Reynolds, DC, Look, DC, Jogai, B, et al., “Time-resolved photoluminescence lifetime measurements of the Gamma(5) and Gamma(6) free excitons in ZnO,” J. Appl. Phys., vol. 88(4), pp.2152-2153, 2000. [3.10] S. Hong, T. Joo, W. I. Park, Y. H. Jun, and G.-C. Yi, “Time-resolved photoluminescence of the size-controlled ZnO nanorods,” Appl. Phys. Lett., vol. 83(20), pp.4157-4159, 2003. [3.11] C. Bauer, G. Boschloo, E. Mukhtar, and A. Hagfeldt, “Ultrafast relaxation dynamics of charge carriers relaxation in ZnO nanocrystalline thin films,” Chem. Phys. Lett. vol. 387(1-3), pp.176-181, 2004. [3.12] K.-H. Lin, G.-W. Chern, Y.-C. Huang, S. Keller, S. P. DenBaars, and C.-K. Sun, “Observation of huge nonlinear absorption enhancement near exciton resonance in GaN,” Appl. Phys. Lett. vol. 83(15), pp.3087-3089, 2003. [3.13] C. T. Hultgren, D. J. Dougherty, and E. P. Ippen, “Above- and below-band femtosecond nonlinearities in active AlGaAs waveguides,” Appl. Phys. Lett. Vol. 61(23), pp.2767-2769, 1992. [3.14] C.-K. Sun, F. Vallée, S. Keller, J. E. Bowers, and S. P. DenBaars, “Femtosecond studies of carrier dynamics in InGaN,” Appl. Phys. Lett., vol.70(15), pp.2004-2006, 1997. [3.15] H. Ye, G. W. Wicks, and P. M. Fauchet, “Hot electron relaxation time in GaN ,” Appl. Phys. Lett., vol.74(5), pp.711-713, 1999. [3.16] C.-K. Sun, Y.-L. Huang, S. Keller, U. K. Mishra, and S. P. DenBaars, “Ultrafast electron dynamics study of GaN,” Phys. Rev. B, vol. 59(21), pp.13535-13538, 1999. [3.17] I. H. Lee, K. J. Yee, K. G. Lee, E. Oh, D. S. Kim, and Y. S. Lim, “Coherent optical phonon mode oscillations in wurtzite ZnO excited by femtosecond pulses,” J. Appl. Phys., vol. 93(8), pp.4939-4941, 2003. [3.18] C.-K. Sun, Y.-C. Huang, G.-W. Chern, K.-H. Lin, and J.-C. Liang, “Femtosecond dynamics of exciton bleaching in bulk GaN at room temperature,” Appl. Phys. Lett. vol. 81(1), pp.85-87, 2002. [3.19] W. H. Knox, R. L. Fork, M. C. Downer, D. A. B. Miller, D. S. 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Sun, K.-H. Lin et al., “Ultrafast carrier dynamics in ZnO nanorods,” J. Appl. Phys., vol. 87(2), 2005. Chapter 4 [4.1] Carlotti, G, Socino, G, Petri, A, et al., “Acoustic investigation of the elastic properties of ZnO films,” Appl. Phys. Lett., vol. 51(23), pp. 1889-1891, 1987. [4.2] Martin LP, Rosen M, “Analysis of ultrasonic velocity measurements on sintering zinc oxide,” Ultrasonics, vol. 35(1), pp. 65-71, 1997. [4.3] Azuhata, T, Takesada, M, Yagi, T, et al., “Brillouin scattering study of ZnO,” J. Appl. Phys., vol. 94(2), pp. 968-972, 2003. [4.4] C. Thomsen, H. T. Grahn, H. J. Maris, and J. Taucet, “Surface generation and detection of phonons by picosecond light-pulses,” Phys. Rev. B, vol. 34(6), pp. 4129-4138, 1986. [4.5] O. B. Wright and K. Kawashima, “Coherent phonon detection from ultrafast surface vibrations,” Phys. Rev. Lett., vol. 69(11), pp.1668-1671, 1992. [4.6] B. Bonello, B. Perrin, E. Romatet, and J. C. Jeannet, ”Application of the picosecond ultrasonic technique to the study of elastic and time-resolved thermal properties of materials,” Ultrasonics, vol. 35(3), pp. 223-231, 1997. [4.7] A. Devos and C. Lerouge, “Evidence of laser-wavelength effect in picosecond ultrasonics: Possible connection with interband transitions,” Phys. Rev. Lett., vol. 86(12), pp. 2669-2672, 2001. [4.8] Rossignol, C, Rampnoux, JM, Perton, M, et al., “Generation and detection of shear acoustic waves in metal submicrometric films with ultrashort laser pulses,” Phys. Rev. Lett., vol. 94(16), pp. 166106, 2005. [4.9] C.-K. Sun, F. Vallée, L. H. Acioli, E. P. Ippen, J. G. Fujimoto, “Femtosecond investigation of electron thermalization in gold,” Phys. Rev. B, vol. 48(16), pp.12365-12368, 1993. [4.10] H. Yoshikawa, and S. Adachi, “Optical Constants of ZnO,” Jpn. J. Appl. Phys., vol.36, pp.6237-6243, 1997. [4.11] N. Soga and O. L. Anderson, “Anomalous Behavior of the Shear-Sound Velocity under Pressure for Polycrystalline ZnO,” J. Appl. Phys. vol. 38, pp. 2985-2988, 1967. [4.12] G. Tas, J. J. Loomis, H. J. Maris, et al., “Picosecond ultrasonics study of the modification of interfacial bonding by ion implantation,” Appl. Phys. Lett., vol. 72, pp. 2235-2237, 1998. [4.13] T. B. Bateman, ”Elastic Moduli of Single-Crystal Zinc Oxide,” J. Appl. Phys.,vol.33(11), pp.3309-3312, 1962. [4.14] H. Jaffe, D. A. Berlincourt, “Piezoelectric transducer materials,” Proc. IEEE, vol. 53(10), pp. 1372-1386, 1965. [4.15] D. Royer, and E. Dieulesaint, Elastic waves in Solids I, Springer, 1996. [4.16] K.-H. Lin, G.-W. Chern, C.-T. Yu, T.-M. Liu, C.-C. Pan, G.-T. Chen, J.-I. Chyi, S.-W. Huang, P.-C. Li and C.-K. Sun, “Optical piezoelectric Transducer for Nano-Ultrasonics,” IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol. 52(8), pp. 1404-1414, 2004. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/31549 | - |
dc.description.abstract | 氧化鋅相關材料由於在元件應用上具極佳的材料特性而愈來愈受到重視。近年來,愈來愈多奈米結構的氧化鋅被合成出來。然而,奈米結構氧化鋅的超快載子動態甚至塊材的氧化鋅自由載子動態仍然很少被研究過。發展以氧化鋅為基礎的元件,了解其物理機制是非常根本的。
因此,在本篇論文中,我們利用飛秒暫態穿透式量測研究氧化鋅奈米柱和氧化鋅薄膜在室溫下激子和「超越能隙自由載子」的動態。從光激發「超越能隙自由載子」後,可以觀察到非常快速的外部熱化時間在200飛秒的數量級。在高功率的激發下,發現熱聲子效應會延緩載子冷卻的過程。當激發光子能量調到和氧化鋅奈米柱的束縛激子躍遷吻合時,發現激子穩定形成而沒有明顯的激子解離過程除非當光激發激子密度超過莫特密度(Mott Density);反之,當激發光子能量調到和氧化鋅薄膜的自由激子躍遷吻合時,即使光激發激子密度未超過莫特密度,仍然可以觀察到時間常數數量級在800飛秒的微弱的激子解離。 除了氧化鋅載子動力學的研究,我們也利用反射式激發探測技術測量氧化鋅薄膜的聲速。然而,量得的聲速數量級為4000m/s,較過去文獻發表的數值數量級為6000m/s慢得多。根據實驗結果分析,我們探討幾個可能的原因。另一方面,觀察到的一些有趣現象引起我們更廣泛地討論。 | zh_TW |
dc.description.abstract | ZnO-related material has got more and more attentions because of its excellent material properties in device application. In recent years, more and more nanostructure ZnO have been synthesized. However, ultrafast carrier dynamics in nanostructure ZnO even free carrier dynamics in bulk ZnO have been less investigated. To develop ZnO-based devices, it is essential to know the physical mechanisms
For this reason, in the thesis, exciton and above-band-gap free carrier dynamics in ZnO nanorods and ZnO thin films have been investigated at room temperature with a femtosecond transient transmission measurement. Following the photoexcitation of above-band-gap free carriers, an extremely fast external thermalization time on the order of 200 fs can be observed. Under high excitation, hot phonon effects were found to delay the carrier cooling process. While the photoexcitation energy was tuned to match the bound exciton transition in ZnO nanorods, stable exciton formation can be uncovered while no evident exciton ionization process can be found unless the photoexcited exciton density exceeded the Mott density. Whereas, while the photoexcitation energy was tuned to match the free exciton transition in ZnO thin films, a weak exciton ionization process with an exciton ionization time of 800 fs can still be found even photoexcited exciton density below the Mott density. In addition to the investigation carrier dynamics in ZnO, we have also utilized femtosecond reflectivity pump-probe technique to measure sound velocity in ZnO thin films. However, the measured sound speed on the order of 4000 m/s appear much slower than the previous reported value on the order of 6000 m/s. Some possible reasons were explore according to the analysis of experimental results. On the other hand, some interesting phenomena observed prompted us to discuss extensively. | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T03:14:37Z (GMT). No. of bitstreams: 1 ntu-95-R93941030-1.pdf: 1383964 bytes, checksum: 7b3cbd2a8dd820511ffe3f373214122e (MD5) Previous issue date: 2006 | en |
dc.description.tableofcontents | Acknowledgement i
Abstract iii Contents v Chapter 1 Introduction 1 1.1 Properties of Zinc Oxide and Its Nanostructures 1 1.1.1 Properties of ZnO 1 1.1.2 ZnO Nanostructures 2 1.2 Femtosecond Pump-Probe Spectroscopy 2 1.3 Motivation and Thesis Structure 5 References Chapter 2 Carrier Dynamics in Semiconductors 9 2.1 Ultrafast Dynamic Processes 11 2.1.1 Carrier-carrier Scattering 11 2.1.2 Carrier-phonon Scattering 11 2.2 Rate Equation Model 14 2.3 Effects of Carrier Generation 15 2.3.1 Band-filling Effect 15 2.3.2 Band-gap Renormalization 16 2.3.3 Hot Phonon Effect 17 2.4 Basic Concepts of Exciton 17 2.4.1 Free Exciton 18 2.4.2 Bound Exciton 18 References Chapter 3 Ultrafast Carrier Dynamics in ZnO 21 3.1 Sample Preparation 22 3.1.1 ZnO Nanorods 22 3.1.2 ZnO Thin Films 26 3.2 Optical Transmission Pump-Probe Setup 28 3.3 Experimental Result 30 3.3.1 Above-band-gap Free Carrier Dynamics 30 3.3.2 Exciton Dynamics 37 3.4 Summary 39 References Chapter 4 ZnO Sound Velocity Measurement 43 4.1 Principle of Acoustic Wave Detection 43 4.2 Sample Preparation and Experimental Setup 45 4.2.1 Au-coated ZnO Thin Films 45 4.2.2 Optical Reflectivity Pump-Probe System Setup 46 4.3 Experimental Result 48 4.4 Discussion 53 References Chapter 5 Conclusion 60 | |
dc.language.iso | en | |
dc.title | 氧化鋅薄膜與奈米結構之超快載子動力學研究 | zh_TW |
dc.title | Studies of Ultrafast Carrier Dynamics in ZnO thin film and Nanostructures | en |
dc.type | Thesis | |
dc.date.schoolyear | 94-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 張玉明(Yu-Ming Chang),孫建文(Kien-Wen Sun),謝文峰(Wen-Feng Hsieh) | |
dc.subject.keyword | 氧化鋅,奈米柱,載子動力學,激子解離,熱化,熱聲子效應, | zh_TW |
dc.subject.keyword | znic oxide,nanorods,carrier dynamics,exciton ionization,thermalization,hot phonon effect, | en |
dc.relation.page | 60 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2006-08-01 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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