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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 郭光宇 | |
dc.contributor.author | Tsung-Wei Chen | en |
dc.contributor.author | 陳宗緯 | zh_TW |
dc.date.accessioned | 2021-06-13T02:06:34Z | - |
dc.date.available | 2007-07-16 | |
dc.date.copyright | 2007-07-16 | |
dc.date.issued | 2007 | |
dc.date.submitted | 2007-07-03 | |
dc.identifier.citation | 1. E. H. Hall, Am. J. Math. { f 2} 287 (1879).
2. E. H. Hall, Phil. Mag. { f 9} 225 (1880). 3. H. Goldstein, {it Classical Mechanics} (Addison-Wesley, 1980) 4. D. Yoshioka, {it The Quantum Hall Effect} (Springer, 2002) 5. G. Morandi, {it Quantum Hall Effect: Topological Problems in Condensed Matter Physics} (Napoli : Bibliopolis, 1988). 6. M. L. Goldberger and K. M. Watson, {it Collision Theory} (Wiley, New York, 1964), page 359. (or see page 399). 7. J. E. Hirsch, Phys. Rev. Lett. { f 83}, 1834 (1999). 8. E. Merzbacher, {it Quantum Mechanics} (Wiley 1998). For spin dependent scattering process, see Chapter 16, page 399. The polarization of scattered beam $vec{mathcal{P}}$ is given in Eq. (16.132) in page 402. 9. M.E. Peskin and D.V. Schroeder, {it An Introduction to Quantum Field Theory} (The Advanced Book Program, 1995) 10. Roland Winkler, {it Spin-orbit Coupling Effects in Two-dimensional Electron and Hole System} (Springer, 2003), See page. 82, Eq. (5.14). For theroy of invariant, see page. 18. 11. E. A. de Andrada e Silva, G. C. La Rocca, and F. Bassani, Phys. Rev. B, {it 50} 8523 (1994). 12. G. A. Prinz, Science { f 282}, 1660 (1998); S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnar, M. L. Roukes, A.Y. Chtchelkanova, and D. M. Treger, Science { f 294}, 1488 (2001). 13. I. Zutic, J. Fabian, and S. D. Sarma, Rev. Mod. Phys. { f 76}, 323 (2004). 14. S. Murakami, N. Nagaosa, and S.-C. Zhang, Science { f 301}, 1348 (2003). 15. J. Sinova, D. Culcer, Q. Niu, N. A. Sinitsyn, T. Jungwirth, and A. H. MacDonald, Phys. Rev. Lett. { f 92}, 126603 (2004). 16. M. I. D'yakonov and V. I. Perel, Sov. Phys. JETP { f 33}, 1053 (1971); L. S. Levitov, Yu. V. Nazarov, and G. M. Eliashberg, Sov. Phys. JETP { f 61}, 133 (1985); J. E. Hirsch, Phys. Rev. Lett. { f 83}, 1834 (1999); S. Zhang, Phys. Rev. Lett. { f 85}, 393 (2000); L. I. Magarill, A. V. Chaplik, and M. V. Entin, Semiconductors { f 35}, 1081 (2001). 17. Dimitrie Culcer, Jairo Sinova, N. A. Sinitsyn, T. Jungwirth, A. H. MacDonald, and Q. Niu, Phys. Rev. Lett. { f 93}, 46602 (2004). 18. S. Zhang, and Z. Yang, Phys. Rev. Lett. { f 94}, 66602 (2005). 19. G. Y. Guo, Y. Yao, and Q. Niu, Phys. Rev. Lett. { f 94}, 226601 (2005). 20. J.-I. Inoue, G. E. W. Bauer, and L. W. Molenkamp, Phys. Rev. B { f 70}, 041303(R) (2004); S. Murakami, Phys. Rev. B { f 69}, 241202(R) (2004); E. G. Mishchenko, A. V. Shytov, and B. I. Halperin, Phys. Rev. Lett. { f 93}, 226602 (2004); K. Nomura, Jairo Sinova, T. Jungwirth, Q. Niu, and A. H. MacDonald, Phys. Rev. B { f 71}, 041304 (2004); arXiv: cond-mat/0407279; O. Chalaev, and D. Loss, arXiv: cond-mat/0407342; A. Khaetskii, arXiv:cond-mat/0408136; R. Raimondi, and P. Schwab, arXiv:cond-mat/0408233. 21. O. V. Dimitrova, Phys. Rev. B { f 70}, 245327 (2005). 22. J. Wunderlich, B. Kaestner, J. Sinova, and T. Jungwirth, Phys. Rev. Lett. { f 94}, 47204 (2005). 23. Y. K. Kato, R. C. Myers, A. C. Gossard, and D. D. Awschalom, Science { f 306}, 1910 (2004). 24. P.-Q. Jin, Y.-Q. Li, F. C. Zhang, cond-mat/0502231 (2005) 25. Q. F. Sun and X. C. Xie, Phys. Rev. B. { f 72}, 245305 (2005). 26. P. Zhang, J. Shi, D. Xiao, and Q. Niu, cond-mat/0503505 (2005); J. Shi, P. Zhang, D. Xiao, and Q. Niu, Phys. Rev. Lett. { f 96}, 76604 (2006). 27. B. A. Bernevig, T. L Hughes and S. C. Zhang, Phys. Rev. Lett. { f 95} 066601 (2005). 28. P. L$ddot{o}$din, J. Chem. Phys. { f 19}, 1396 (1951). 29. J. M. Luttinger, Phys. Rev. { f 102}, 1030 (1956). 30. H. Haug and S. W. Koch, {it Quantum Theory of the Optical and Electronic Properties of Semiconductors} (World Scientific 2004). See Eq. (3.94) in Chap.3. 31. Sudha Gopalan, J. K. Furdyna and S. Rodriguez, Phys. Rev. B { f 32}, 903 (1985). 32. D. L. Boiko, P. Feron and P. Besnard, Phys. Rev. B { f 73}, 035204 (2006). G. Dresselhaus, Phys. Rev. { f 100}, 580 (1955). C. Kittel, {it Quantum Theory of Solids} (Wiley, 1987), Chap. 10 and Chap. 14. 33. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B { f 56}, R10024 (1997). 34. G. Dresselhaus, A. F. Kip, and C. Kittel, Phys. Rev. { f 98}, 368 (1955). 35. M. Cardona, N. E. Christensen, G. Fasol, Phys. Rev. B { f 38}, 1806 (1988). 36. J. Wang, B. G. Wang, W. Ren, and H. Guo, cond-mat/0507159 (2005) 37. Y. Wang, K. Xia, Z.-B. Su, and Z. Ma, cond-mat/0508340 (2005) 38. Y. A. Bychkov and E. I. Rashba, J. Phys. C { f 17}, 6039 (1984). 39. G. Dresselhaus, Phys. Rev. { f 100}, 580 (1955). 40. J. Nitta, T. Akazaki, H. Takayanagi, and T. Enoki, Phys. Rev. Lett. { f 78}, 1335 (1997); J. Luo, H. Munekata, F.F. Fang, and P. J. Stiles, Phys. Rev. B. { f 38} 10142 (1988); Phys. Rev. B. { f 41}, 7685 (1990). 41. M. Marder, {it Condensed Matter Physics} (John Wiley $&$ Sons, Inc., New York, 2000). 42. S.-Q. Shen, Phys. Rev. B { f 70}, 81311 (2004). 43. N. A. Sinitsyn, E. M. Hankiewicz, W. Teizer, and J. Sinova, Phys. Rev. B { f 70}, 81312 (2004). 44. M. V. Berry, Proc. Soc. Lond. A, { f 392}, 45 (1984). 45. B. Simon, Phys. Rev. Lett, { f 51}, 2167 (1983). 46. D. Chruscinski and A. Jamiolkowski, {it Geometric Phases in Classical and Quantum Mechanics} (Birkhauser, 2004). 47. {it Topological Aspects of Low Dimensional Systems} (Springer 1998) edited by A. Comtet, T. Jolicoeur, S. Ouvry and F. David. 48. {it Geometric Phase in Physics} (World Scientific, Singapore, 1989) edited by A. Shapere and F. Wilczek. 49. A. Bohm, A. Mostafazadeh, H. Koizumi, Q. Niu and J. Zwanziger, {it The Geometric Phase in Quantum Systems} (Springer, Berlin, 2003). 50. J. Zak, Phys. Rev. Lett. { f 62}, 2747 (2005). 51. M. C. Chang, Q. Niu, Phys. Rev. Lett. { f 75}, 1348 (1995); M. C. Chang, Q. Niu, Phys. Rev. B. { f 53}, 7010 (1996). 52. S. Murakami, Naoto Nagaosa, S. C. Zhang, Phys. Rev. B { f 69}, 235206 (2004). 53. J.Schliemann and D. Loss, Phys. Rev. B, { f 71}, 085308 (2005). 54. D. Schmeltzer, cond-mat/0509607 (2005) 55. M. C. Chang, Phys. Rev. B { f 71}, 085315 (2005). 56. J. Hu, cond-mat/0503149 (2005). 57. J. Li, L. Hu, S.-Q. Shen, Phys. Rev. B { f 71}, 241305 (R) (2005). 58. B. K. Nikolic, L. P. Zarbo, and S. Welack, Phys. Rev. B { f 72}, 75335 (2005). 59. J. J. Sakurai, {it Advanced Quantum Mechanics} (Addison Wesley, 1997). 60. F. Meier and D. Loss, Phys. Rev. Lett. { f 90}, 167204 (2004). 61. Oleg Chalaev and Daniel. Loss, Phys. Rev. B. { f 71}, 245318 (2005). Errtum: Phys. Rev. B. { f 73},049901 (2005). J.Schliemann and D. Loss, Phys. Rev. B, { f 71}, 085308 (2005). 62. N. Sugimoto, S. Onoda, S. Murakami and N. Nagaosa, Phys. Rev. B. { f 73}, 113305 (2006). 63. John Schliemann, J. Carlos Egues, and Daniel Loss, Phys. Rev. Lett. { f 90}, 146801 (2003). 64. S. D. Ganichev, V. V. Bel'kov, L. E. Golub, E. L. Ivchenko, Petra Schneider, S. Giglberger, J. Eroms, J. De Boeck, G. Borghs, W. Wegscheider, D. Weiss, and W. Prettl, Phys. Rev. Lett. { f 92}, 256601 (2004). 65. G. Arfken and H. J. Weber, {it Mathematical Methods for Physicists} (Academic Press, 1995). 66. E. I. Blount: {it Formalisms of Band Theory} in {it Solid State Physics} { f13}, 305, (Academic, New York 1962) edited by F. Seitz and D. Turnbull. 67. J. J. Sakurai, {it Modern Quantum Mechanics} (Addison Wesley, 1994). 68. See Ref. [46], page 81. 69. S. Murakami, Phys. Rev. B { f 69}, 241202(R) (2004). 70. I. Zorkani and E. Kartheuser, Phys. Rev. B. { f 53}, 1871 (1996). 71. M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, {it Properties of Advanced Semiconductor Materials} (Wiley 2001). 72. The relaxed lattice constant obtained from Dr. D. Cai's Thesis, {it Stress Related Effects of GaN Based Semiconductor Heterostructures} (Xiamen University, 2006). 73. L. C. Lew Yan Voon, et al., Phys. Rev. B. { f 53}, 10703 (1996); D. Culcer, et.al., cond-mat/0408020. 74. I. Zutic, J. Fabian and S. D. Sarma, Rev. Mod. Phys. { f 76}, 323 (2004). 75. D'yakonov, Sov. Phys. JETP. { f 63}, 655~661 (1986). 76. J. Luo, H. Munekata, F. F. Fang and P. J. Stiles, Phys. Rev. B. { f 41}, 7685 (1990). 77. Peter Y. Yu and Manuel Cardona, {it Fundamentals of Semiconductors} (Springer, 2001), third edition. 78. J. F. Nye, {it Physical Properties of Crystals} (Oxford 1957). 79. J. Singh, {it Electronic and Optoelectronic Properties of Semiconductor Structures} ( Cambridge, 2003). 80. J. Nitta, T. Akazaki, H. Takayanagi, and T. Enoki, Phys. Rev. Lett. { f 78}, 1335 (1997). 81. Erasmo A. de Andrada e Silva, Phys. Rev. B. { f 46}, 1921 (1992). 82. G. Engles, J. Lange, Th. Schapers, and H. Luth, Phys. Rev. B { f 55}, R1958 (1997). 83. K. S. Cho, Tasi-Yu Huang, Hong-Syuan Wang, Ming-Gu Lin, Tse-Ming Chen, C.-T. Liang, and Y. F. Chen, Appl. Phys. Lett. { f 86}, 222102 (2005). 84. P. Perlin, E. Eitwin-Staszewska, B. Suchanek, and W. Knap, J. Camassel, I. Suski, R. Piotrzkowski, I. Grzegory, S. Porowski, E. Kaminska, and J. C. Chervin, Appl. Phys. Lett. { f 68}, 1114 (1996). 85. Supriyo Datta and Biswajit Das, Appl. Phys. Lett. { f 56}, 665 (1990). {it Solid State Physics}, edited by F. Seitz and D. Turnbull, Vol. { f 17}, 270. (Academic Press, New York and London). {it Semiconductors and Semimetals}, edited by R. K. Willardson and A. C. Beer, Vol. { f 1}, 159. (Academic Press, New York and London, 1966). 86. H. J. Chang, T. W. Chen, J. W. Chen, W.C. Hong, W. C. Hong, W. C. Tsai, Y. F. Chen, and G. Y. Guo, Phy. Rev. Lett. { f 98}, 136403 (2007). (Erratum: Phys. Rev. Lett. { f 98}, 239902 (2007)). 87. V. I. Litvinov, Phys. Rev. B. { f 68}, 155314 (2003). 88. V. I. Litvinov, cond-mat/0608179. 89. Tsung-Wei Chen, Chih-Meng Huang, and G. Y. Guo, Phys. Rev. B. { f 73}, 235309 (2006). 90. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, Phys. Rev. Lett. { f 53}, 2173 (1984). 91. Gerald D. Mahan, {it Many Particle Physics} (Academic Press, 2000). 92. E. T. Yu: {it Spontaneous and Piezoelectric Polarization in Nitride Heterostructures}, in {it III-V Nitride Semiconductors : Applications and Devices}, page 161, (New York : Taylor and Francis, 2003) edited by E. T. Yu and M. O. Manasreh. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/30520 | - |
dc.description.abstract | 考慮Rashba-Dresselhaus自旋軌道耦合效應的高遷移率之二維電子系統, 我們做了自旋與軌道角動量的霍爾效應之理論研究。 在研究自旋與軌道角動量流時, 我們引進了自旋矩與軌道矩的修正項。 我們發現到當兩個能帶皆佔據時, 自旋霍爾電導率仍然是一個常數 (也就是與載子的濃度無關)。 而且加入修正項之後, 所得出來的值與先前計算的結果相差一個負號。 自旋霍爾電導率一般來說在Rashba-Dresselhaus 系統下是無法互相抵消的。 軌道霍爾電導率也與載子濃度無關, 但是與Rashba 跟 Dresselhaus自旋耦合強度的比值有關。 這意謂我們可以藉由調整閘極電壓而改變總角動量霍爾效應的大小。 我們注意到, 在 Rashba 系統之下, 由於總角動量守恆, 所以軌道霍爾電導率會消除自旋霍爾電導率的貢獻。 但是由於電子的磁偶級矩是軌道的兩倍, 所以我們認為自旋仍可在邊界上造成累積而磁化。 我們也討論了由電場引發的軌道角動量流的來源。 最後我們也發現了自旋與軌道角動量電導率與 Berry 相位的緊密關係。 此研究已經發表在 Phys. Rev. B. 73, 235309 (2006)。
對於氮化銦鎵/氮化鎵(InGaN/GaN) 的超晶格系統, 我們計算了自旋霍爾電導率。 我們發現可以藉由調整由應變引起的內建電場的大小來調整自旋霍爾流。 計算結果顯示, 自旋霍爾電導率定性上與實驗吻合。 此研究已經發表在 Phys. Rev. Lett. 98, 136403 (2007)。 | zh_TW |
dc.description.abstract | The spin and orbital angular momentum (OAM) Hall effect in a high
mobility two-dimensional electron system with Rashba and Dresselhuas spin-orbit coupling has been studied theoretically. We introduce both the spin and OAM torque corrections, respectively, to the spin and OAM currents. We find that when both bands are occupied, the spin Hall conductivity is still a universal constant (i.e., independent of the carrier density) which, however, has an opposite sign to the previous value. The spin Hall conductivity in general would not cancel the OAM Hall conductivity in Rashba-Dresselhaus system. The OAM Hall conductivity is also independent of the carrier density but depends on the strength ratio of the Rashba to Dresselhaus spin-orbit coupling, suggesting that one can manipulate the total Hall current through tuning the Rashba coupling by a gate voltage. We note that in a pure Rashba system, though the spin Hall conductivity is exactly cancelled by the OAM Hall conductivity due to the angular momentum conservation, the spin Hall effect could still manifest itself as nonzero magnetization Hall current and finite magnetization at the sample edges because the magnetic dipole moment associated with the spin of an electron is twice as large as that of the OAM. We also evaluate the electric field-induced OAM and discuss the origin of the OAM Hall current. Finally, we find that the conventional spin and OAM Hall conductivities are closely related to the Berry vector (or gauge) potential. This work has been published in Phys. Rev. B. 73, 235309 (2006). In superlattice InGaN/GaN, the conventional spin Hall conductivity has been calculated. We found that spin Hall current can be manipulated by changing the built-in electric field which is due to the tunable internal strain. The calculation result shows that the conventional spin Hall conductivity is qualitatively consistent with the experiment result. This work has been published in Phys. Rev. Lett 98, 136403 (2007). | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T02:06:34Z (GMT). No. of bitstreams: 1 ntu-96-F90222005-1.pdf: 11918997 bytes, checksum: 39124102f693502af6277b49e895d1b7 (MD5) Previous issue date: 2007 | en |
dc.description.tableofcontents | 1. Introduction….7
1.1 Introduction to Hall effect….7 1.1.1 Charge Hall effect….7 1.1.2 Spin Hall effect….10 1.1.3 Orbital Hall effect….13 1.2 Spin-orbit coupling and time reversal symmetry….14 1.2.1 Spin-orbit coupling….14 1.2.2 Time reversal symmetry….20 2. Effective Hamiltonian in Spin-Orbit System….24 2.1 Luttinger Hamiltonain….24 2.2 Rashba-Dresselhaus system….29 2.3 Effective Hamiltonian for wurtzite structure….32 2.3.1 Bulk inversion asymmetry….32 2.3.2 Built-in electric field….34 2.3.3 Effective Hamiltonian….37 2.4 Appendix: Built-in electric field in InGaN/GaN….37 2.5 Appendix: Derivation of Dresselhaus Hamiltonian along [001] confinement direction in zinc-blende semiconductor….40 3. Spin and Orbital Continuity Equation….42 3.1 Derivation of spin continuity equation in Rashba-Dresselhaus system….42 3.2 Derivation of orbital continuity equation in Rashba-Dresselhaus system….45 4. Convensional and Torque Conductivity….48 4.1 Kubo formula….48 4.2 Convensional and torque conductivity….50 4.3 Spin Hall conductivity….52 4.3.1 Luttinger Hamiltonian….52 4.3.2 Rashba-Dresselhaus system….55 4.3.3 Wurtzite system….56 4.4 Orbital Hall conductivity at R-D system….59 4.5 Appendix: Spin and orbital angular momentum torque conductivity….60 5. Berry Phase, Spin and Orbital Hall Effect….64 5.1 Introduction to Berry phase….64 5.1.1 Adiabatic evolution….65 5.1.2 Parallel transport….66 5.2 Berry phase, spin and orbital Hall conductivity….70 5.3 Gauge invariant position operator….75 6. Discussions and Conclusions….78 6.1 Discussions….78 6.1.1 Systems with both R-D spin-orbit coupling….78 6.1.2 Pure Rashba spin-orbit coupling….80 6.1.3 Pure Dresselhaus spin-orbit coupling….81 6.2 Appendix: Magnetization and spin current….82 6.3 Conclusions….83 | |
dc.language.iso | en | |
dc.title | 超晶格與異質結構的自旋與軌道角動量之霍爾效應 | zh_TW |
dc.title | Spin and Orbital Angular Momentum Hall Effect in Superlattice and Heterostructure | en |
dc.type | Thesis | |
dc.date.schoolyear | 95-2 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 張慶瑞,張明哲,葉崇傑,洪在明 | |
dc.subject.keyword | 自旋霍爾效應,軌道角動量霍爾效應,自旋軌道耦合效應,壓電效應,氮化銦鎵/氮化鎵,異質結構,超晶格, | zh_TW |
dc.subject.keyword | spin Hall effect,orbital angular momentum Hall effect,spin-orbit coupling,piezoelectric effect,InGaN/GaN,heterostructure,superlattices, | en |
dc.relation.page | 91 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2007-07-03 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 物理研究所 | zh_TW |
顯示於系所單位: | 物理學系 |
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