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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 梁啟德 | |
| dc.contributor.author | Zhi-Yao Zhang | en |
| dc.contributor.author | 張智堯 | zh_TW |
| dc.date.accessioned | 2021-06-13T02:00:50Z | - |
| dc.date.available | 2008-07-16 | |
| dc.date.copyright | 2007-07-16 | |
| dc.date.issued | 2007 | |
| dc.date.submitted | 2007-07-09 | |
| dc.identifier.citation | ch1
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/30310 | - |
| dc.description.abstract | This work is composed of two parts including measurements associated with magnetotransport of two-dimensional electron gas (2DEG) in semiconductor heterostructures, which provides substantial information on the transport phenomena in heterostructures.
We reported the photoconductivity of two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructure. The signal we observed was the magnetoresistivity under the microwave illumination (12dBm; 20GHz~30GHz). Comparing with the results of the standard magnetoresistivity measurements we found that the effect induced by continuous microwave could be possibly due to hot carrier effect. However, by means of modulated-microwave technique we could directly detect the effect induced by the microwave. Therefore, the measurements concern microwave frequency, microwave power, magnitude of current source, and temperature dependence of the microwave modulated signal were performed. The results show that the peaks of the magnetoresistivity oscillations shift as the microwave frequency is changing. Nevertheless, we were still able to observe microwave modulated signals while the current source was turn off. These signals associated with photovoltaic effect had been studied further by understanding the microwave frequency and temperature dependence of them. We also reported on magnetotransport results of 'AlGaN/GaN' high electron mobility transistor structure grown on p-type Si (111) substrate. The results show that there exists an approximately temperature (T)-independent point in the longitudinal resistivity ρ_XX which could be ascribed to a direct transition from a weak insulator to a high Landau level filling factor quantum Hall state at low magnetic fields. And the Hall resistivity decreases with increasing T, compelling experimental evidence for electron-electron interaction effects in a weakly disordered system. However, quantum correction has attracted much attention recently because of the theory of Zala et al. In order to verify these new theories, we would used them to analyze the experimental results. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T02:00:50Z (GMT). No. of bitstreams: 1 ntu-96-R94222042-1.pdf: 7643456 bytes, checksum: 0c467daf5e0860c5fc0a98b5de1cf76e (MD5) Previous issue date: 2007 | en |
| dc.description.tableofcontents | Contents
Chapter 1 Literature Review 1 1-1 Introduction 1 1-2 Drude Model 2 1-3 Hall Effect 4 1-4 Fermi-Dirac Statistics 6 1-5 Density of States 8 1-6 Energy Band 11 1-7 Effective Mass 13 1-8 Band Bending 15 1-9 Photovoltaic Effect 18 References 21 Chapter 2 Quantum Magnetotransport at Low Temperatures 22 2-1 Introduction 22 2-2 Landau Levels 23 2-3 Quantum Hall Effect 25 2-4 Magnetoresistivity Tensor 29 2-5 Aharonov-Bohm Effect 31 2-6 Weak Localization 34 2-7 Electron-electron Interaction 37 References 38 Chapter 3 Microwave-modulated Transport of Two-dimensional Electron Gas in GaAs/AlGaAs Heterostructure 39 3-1 Introduction 39 3-2 Theoretical Background 41 Shubnikov-de Haas Oscillation 41 Cyclotron Resonance 43 Photoconductivity and MIMO 45 3-3 Experimental Setup and Techniques 49 Standard Magnetoresistivity Measurements 50 Continuous Microwave Illumination 51 Modulated Microwave Illumination 52 The Principle of Modulated-microwave Technique 53 3-4 Experimental Results 55 Standard Magnetoresistivity Measurements 55 Continuous Microwave Illumination 59 Modulated-microwave Illumination 61 Microwave-modulated Magnetotransport without Current Source 65 3-5 Summary 72 References 74 Chapter 4 Electrical Measurements of an AlGaN/GaN High Electron Mobility Transistor Structure Grown on Si 75 4-1 Introduction 75 4-2 Theoretical Background 77 Fermi Liquid 77 Conductivity Corrections Based on the Theory of Zala et al. 78 4-3 Experiment 81 4-4 Experimental Results 82 4-5 Summary 88 References 89 Chapter 5 Conclusions 90 | |
| dc.language.iso | en | |
| dc.subject | 微波 | zh_TW |
| dc.subject | 二維電子系統 | zh_TW |
| dc.subject | 砷化鎵 | zh_TW |
| dc.subject | 霍爾量測 | zh_TW |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | 2DEG | en |
| dc.subject | Hall Measurements | en |
| dc.subject | GaN | en |
| dc.subject | Microwave | en |
| dc.subject | GaAs | en |
| dc.title | 微波調變下砷化鎵/鋁砷化鎵二維電子氣與成長於矽基板上之氮化鎵/鋁氮化鎵高電子遷移率電晶體結構的電性研究 | zh_TW |
| dc.title | Microwave-modulated Transport of Two-dimensional Electron Gas in GaAs/AlGaAs Heterostructure &
Electrical Measurements of an AlXGa1-XN/GaN High Electron Mobility Transistor Structure Grown on Si | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 95-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 陳永芳,張顏暉 | |
| dc.subject.keyword | 二維電子系統,砷化鎵,微波,氮化鎵,霍爾量測, | zh_TW |
| dc.subject.keyword | 2DEG,GaAs,Microwave,GaN,Hall Measurements, | en |
| dc.relation.page | 91 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2007-07-10 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 物理研究所 | zh_TW |
| 顯示於系所單位： | 物理學系 | |
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