請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/29639完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 張顏暉 | |
| dc.contributor.author | Yung-Hsu Lin | en |
| dc.contributor.author | 林詠絮 | zh_TW |
| dc.date.accessioned | 2021-06-13T01:13:07Z | - |
| dc.date.available | 2017-12-31 | |
| dc.date.copyright | 2007-07-31 | |
| dc.date.issued | 2007 | |
| dc.date.submitted | 2007-07-18 | |
| dc.identifier.citation | 1. Peierls, R. E., Ann. I. H. Poincare 5, 177-222 (1935).
2. Landau, L. D., Phys. Z. Sowjetunion, 11, 26-35 (1937). 3. Landau, L. D. and Lifshitz, E. M. Statistical Physics, Part I. Pergamon Press, Oxford, 1980. 4. Mermin, N. D., Phys. Rev. 176, 250-254 (1968). 5. Venables, J.A., Spiller G.D.T., Hanbucken, M., Rep. Prog. Phys. 47, 399-459 (1984). 6. Evans, J.W., Thiel, P.A., Bartelt, M.C., Sur. Sci. Rep. 61, 1-128 (2006). 7. Wallace, P. R., Phys. Rev. 71, 622-634 (1947). 8. McClure, J.W., Phys. Rev. 104, 666-671 (1956). 9. Slonczewski, J.C., Weiss, P.R., Phys. Rev. 109, 272-279 (1958). 10. Novoselov, K. S., et al., Science 306, 666-669 (2004). 11. Novoselov, K. S., et al., Nature 438, 197-200 (2005). 12. Zhang, Y., Tan, J.W., Stormer, H.L., Kim, P., Nature 438, 201-204 (2005). 13. Partoens, B. and Peeters, F.M., Phys. Rev. B 74, 075404 (2006). 14. Ernie W. Hill, et al, IEEE Trans. Magn., 42, 2694-2696, (2006) 15. M.C. Lemme, et al, IEEE Electron Dev. Lett., Vol. 28, No. 4, (2007) 16. B. Huard, et al, Phys. Rev. Lett. 98, 236803 (2007) 17. Barbaros Özyilmaz, et al, arxiv.org/pdf/0705.3044 18. K. S. Novoselov, et al, Science 315, 1379 (2007) 19. Zhihong Chen, Yu-Ming Lin, Michael J. Rooks, Phaedon Avouris, (2007), arXiv:cond-mat/0701599 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/29639 | - |
| dc.description.abstract | Monolayer graphite thin film (graphene) has attracted much attention recently because of its many unique properties and potential applications. In this thesis, we describe the method we developed to fabricate graphene-based device. Mechanical proliferation was used to create thin graphite fakes on the surface of SiO2 which was grown on top of n+ silicon substrate. Optical and Atomic force microscope were then used to identify the position and thickness of the graphene flakes. Electron beam lithography was then employed to make contacts to these graphene flakes. The problems that were encountered and solved in these processes will be are presented and discussed in this thesis. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T01:13:07Z (GMT). No. of bitstreams: 1 ntu-96-R93222056-1.pdf: 1849982 bytes, checksum: 022b959d9f6ba59516e556cefc53eddc (MD5) Previous issue date: 2007 | en |
| dc.description.tableofcontents | List of Figures i
Chapter 1 1 Introduction 1 1.1 Graphene 1 1.2 Thesis overview 3 References 4 Chapter 2 6 Theoretical Background 6 2.1 Graphite 6 2.1.2 Anisotropic properties of graphite 7 2.1.3 Highly Orientated Pyrolytic Graphite 8 2.1.4 Few-layer graphite: graphene 9 2.2 Gate-controlled device 10 2.3 Properties of graphene 11 2.3.1 Gate-controlled graphene device 12 2.3.2 Dependence of Resistivity on gate voltage 13 2.3.3 Dependence of Hall coefficient on gate voltage 14 2.3.4 EFE on graphite with different thickness 15 References 19 Chapter 3 20 Experimental Apparatus and Procedures 20 3.1 Atomic Force Microscope 20 3.1.1 Basic Principles of Atomic Force Microscope 20 3.1.2 Three Imaging Modes 20 3.2 E-beam Lithography 22 3.2.1 Introduction 22 3.2.3 Proximity effect 24 3.3 Hall Effect 25 3.4 Experimental Procedures 28 3.4.1 Preparing graphite thin films 28 3.4.2 Photo Lithography 29 3.4.3 Marking the position of graphite films by Atomic Force Microscope (AFM) 30 3.4.4 Electron Beam Lithography 31 3.4.5 Measurement by Hall System 32 References 34 Chapter 4 35 Experiment Results and Discussions 35 4.1 Search and Observation of thin graphite by AFM 35 4.2 Results of E-beam Lithography 40 4.3 Hall measurement 42 4.3.1 Sample YH269 42 4.3.2 Sample YH294 44 4.4 Some improvements for device process 50 4.4.1 Cleaning the substrate 50 4.4.2 Minimization the error of E-beam lithography 50 4.4.3 Trick for lift-off 51 4.4.4 Attention to weld the package 51 Reference 53 Chapter 5 54 Conclusion 54 | |
| dc.language.iso | en | |
| dc.title | 以電子束微影製作奈米石墨薄膜 | zh_TW |
| dc.title | Fabrication of Nano Graphite Thin Film by Electron Beam Lithography | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 95-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 陳永芳,梁啟德 | |
| dc.subject.keyword | 電子束,石墨,薄膜, | zh_TW |
| dc.subject.keyword | Electron Beam Lithography,Graphite, | en |
| dc.relation.page | 54 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2007-07-20 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 物理研究所 | zh_TW |
| 顯示於系所單位： | 物理學系 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-96-1.pdf 目前未授權公開取用 | 1.81 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。