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標題: | 磁性穿隧接面-使用有機分子為位障 Magnetic Tunnel Junction with Organic Spacer |
作者: | Jung-Chi Tai 戴榮吉 |
指導教授: | 林敏聰(Minn-Tsong Lin) |
關鍵字: | 分子自旋電子學,分子電子學,有機磁性穿隧接面,有機自旋閥,穿隧磁阻,LB膜, Molecular Spintronics,Molecular Electronics,Organic Magnetic Tunnel Junction,Organic Spinvalve,Tunnel Magnetoresistance,Langmuir-Blodgett film, |
出版年 : | 2007 |
學位: | 碩士 |
摘要: | 我們嘗試去組裝以有機分子或高分子為位障的磁性穿隧接面。我們用了四種方法去形成有機薄膜,其中有兩種方法成功得製備穿隧接面。此二方法是形成兩性分子的Langmuir-Blodgett (LB)膜和以旋轉塗布法製備高分子薄膜。本實驗的目標是實現在有機接面觀測到穿隧磁阻效應(TMR),並且量測此有機磁性穿隧接面的電性、磁性、表面特性和化學性質。對於以Langmuir-Blodgett (LB)膜為位障的有機磁性穿隧接面,我們發現和磁性組態一致的穿隧磁阻效應。除此之外,我們比較了有機磁性穿隧接面在不同溫度和不同分子層下的穿隧磁阻效應。 We try to fabricate magnetic tunnel junctions with the organic spacer of molecules or polymers. There are four methods we use to form organic thin layer, and two of them could successfully be used to prepare tunnel junctions. They are the method of formation of Langmuir-Blodgett (LB) films of amphibious small molecules and the method of spin coating of polymers. The main goal of the experiments is to realize the tunnel magneto-resistance (TMR) effect in the organic junction, and to measure the electric, magnetic, surface, and chemical properties of the organic magnetic tunnel junction (OMTJ). We find the tunnel magneto-resistance effect of the organic magnetic tunnel junction with the organic spacer of Langmuir-Blodgett (LB) film, which is consistent with the magnetic configuration. In addition, we compare the TMR effect at different temperature and with different molecular layers. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/29533 |
全文授權: | 有償授權 |
顯示於系所單位: | 物理學系 |
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