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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳志毅(Chih-I Wu) | |
| dc.contributor.author | Hui-Yu Chen | en |
| dc.contributor.author | 陳慧瑜 | zh_TW |
| dc.date.accessioned | 2021-06-13T01:09:15Z | - |
| dc.date.available | 2013-08-10 | |
| dc.date.copyright | 2011-08-10 | |
| dc.date.issued | 2011 | |
| dc.date.submitted | 2011-08-03 | |
| dc.identifier.citation | Ch1
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/29519 | - |
| dc.description.abstract | 在本論文中，主要為自組裝分子修飾之銀電極有機五環素場效電晶體的電性探討。利用調配不同比例的自組裝分子(HDT和FDT)可以成功地修飾銀電極，使銀的功函數和金的功函數極為匹配。由自組裝分子修飾後之銀電極下接觸式有機五環素場效電晶體的載子遷移率可達到0.21 cm2/ Vs，此載子遷移率已超越一般金電極下接觸式的有機五環素場效電晶體。而自組裝分子修飾之銀電極下接觸式有機五環素場效電晶體的臨界電壓比起金電極下接觸式的有機五環素場效電晶體也明顯地大幅度減小。由介面光譜分析可知，經自組裝分子修飾過後，銀電極和有機五環素之間的電洞注入能障大為減少。修飾後銀電極下接觸式有機五環素場效電晶體的飽和汲極-源極電流、載子遷移率等特性皆比金電極下接觸式有機五環素場效電晶體好，主要歸因於有機五環素和電極之間的電洞注入能障減小以及有機五環素在電極和二氧化矽絕緣層成長的晶粒大小差異不大且可視為成長連續的一層薄膜。 | zh_TW |
| dc.description.abstract | Excellent performance improvement has been demonstrated of bottom-contact pentacene-based organic thin film transistors (OTFTs) with silver electrodes modified by self-assembled monolayers (SAMs) of binary mixtures of n-alkanethiol (n-decanethiol, HDT) and the fluorinated analogue (3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluoro-1-decanethiol, FDT). The OTFTs with modified silver (Ag) electrodes exhibit carrier mobility of 0.21 cm2/ Vs, which is faster than most bottom-contact pentacene-based OTFTs with gold (Au) electrodes. The threshold voltage is reduced from -30 V of the devices with Au electrodes to -5.4 V of the devices with modified Ag electrodes. The hole injection barrier is also reduced with modified Ag as indicated by ultraviolet photoemission spectroscopy. The enhancement of the saturation current and the mobility of the devices are due to both the reduction of hole injection barriers and the continuous grain size of pentacene on top of electrodes and dielectrics. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T01:09:15Z (GMT). No. of bitstreams: 1 ntu-100-R98941039-1.pdf: 2450374 bytes, checksum: b498067e820dae65e1c25a97138417a8 (MD5) Previous issue date: 2011 | en |
| dc.description.tableofcontents | CONTENTS
口試委員會審定書 i 誌謝 ii 中文摘要 v ABSTRACT vi CONTENTS vii LIST OF FIGURES x LIST OF TABLES xv Chapter 1 Introduction 1 1.1 Organic Semiconductors 1 1.2 Organic Semiconductor Materials 2 1.2.1 Pentacene 5 1.3 Transport Mechanisms of Organic Semiconductors 6 1.3.1 Hopping Mode 6 1.3.2 Multiple Trapping and Release (MTR) Mode 7 1.3.3 Polarons 9 REFERENCE 11 Chapter 2 Organic Thin Film Transistors 13 2.1 Field Effect Transistor 13 2.2 Organic Field Effect Transistor 14 2.3 Geometry and Operation Mode 17 2.4 Characteristics Analysis 20 2.4.1 Output characteristics 22 2.4.2 Transfer characteristics 25 2.5 Contact Resistance 28 2.6 The Interface Between Organic Materials and Metals 31 REFERENCE 35 Chapter 3 Fabrication Techniques 37 3.1 Materials Preparation 37 3.2 Fabrication Equipment 39 3.2.1 Ultrasonic Cleaner 39 3.2.2 Oxygen Plasma Cleaner 40 3.2.3 Thermal Evaporator 40 3.2.4 In-Situ Electrical System 41 3.3 Measurement Equipment 42 3.3.1 Photoelectron Spectrometer AC2 42 3.3.2 In-Situ Electrical Measurement System 43 3.3.3 UV Photoemission Spectroscopy (UPS) 43 3.3.4 Atomic Force Microscopy (AFM) 46 3.4 Experiment Procedure 48 3.4.1 Cleaning Procedure 48 3.4.2 Fabrication Procedure 49 REFERENCE 50 Chapter 4 High Performance of Pentacene Thin-Film Transistor with Self-Assembled Monolayer on Silver Electrodes 51 4.1 Introduction 51 4.2 Experimental Methods 54 4.3 Results and Discussion 56 4.3.1 Part I: Tuning the Work Function of Silver Electrodes 56 4.3.2 Device with Various Work Function Electrodes 58 4.3.3 Part II: Comparison of SAM-modified Silver Devices and Gold Devices 63 4.3.4 Electrical Characteristics 64 4.3.5 Interface Analysis 67 4.3.6 Morphology Effect 73 REFERENCE 75 Chapter 5 Conclusions and Future Work 78 5.1 Conclusions 78 5.2 Future Work 79 | |
| dc.language.iso | en | |
| dc.subject | 電洞注入能障 | zh_TW |
| dc.subject | 五環素 | zh_TW |
| dc.subject | 有機場效電晶體 | zh_TW |
| dc.subject | 自組裝分子 | zh_TW |
| dc.subject | 載子遷移率 | zh_TW |
| dc.subject | 臨界電壓 | zh_TW |
| dc.subject | Organic thin film transistors | en |
| dc.subject | Hole injection barrier | en |
| dc.subject | Threshold Voltage | en |
| dc.subject | Carrier Mobility | en |
| dc.subject | Self-assembled monolayers | en |
| dc.subject | Pentacene | en |
| dc.title | 自組裝分子修飾之銀電極有機五環素場效電晶體探討 | zh_TW |
| dc.title | High Performance of Pentacene Thin-Film Transistor with Self-Assembled Monolayer on Silver Electrodes | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 99-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 陳錦地,陳奕君,劉舜維 | |
| dc.subject.keyword | 五環素,有機場效電晶體,自組裝分子,載子遷移率,臨界電壓,電洞注入能障, | zh_TW |
| dc.subject.keyword | Pentacene,Organic thin film transistors,Self-assembled monolayers,Carrier Mobility,Threshold Voltage,Hole injection barrier, | en |
| dc.relation.page | 79 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2011-08-03 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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