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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 黃建璋(Jian-Jang Huang) | |
| dc.contributor.author | Yu-Sheng Chen | en |
| dc.contributor.author | 陳育昇 | zh_TW |
| dc.date.accessioned | 2021-06-13T01:08:03Z | - |
| dc.date.available | 2008-07-24 | |
| dc.date.copyright | 2007-07-24 | |
| dc.date.issued | 2007 | |
| dc.date.submitted | 2007-07-20 | |
| dc.identifier.citation | 參考文獻
[1] E. Benamar, M. Rami, C. Messaoudi, D. Sayah, A. Ennaoui, Solar Energy Materials and Solar Cells 56 (1999) 125-139. [2] M. S. Wu, W. C. Shin and W. H. Tsai, J. Phys. D: Appl. Phys. 31 (1998) 943. [3] B.H. Choi, and H.B Im, Thin Solid Films 193/194 (1990) 712 [4] R. Wang, L.H. King and A.W. Sleight, J. Mater. Res. 11 (1996) 1659-1664 [5] H. Hawamoto, R. Konishi, H. Harada and H. Sasakura, Springer Proceedings in Physics, 38 (1989) 314 [6] A. Sarkar, S. Ghosh, S. Chaudhury, and A.K. Pal, Thin Solid Films 204 (1991) 255 [7] F.D. Paraguay, J. Morales, W.L. Estrada, E.Andrade, M.M. Yoshida, Thin Solid Films 366 (2000) 16-27 [8] S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, and H. Shen, J. Crystal Growth, 225 (2001) 110. [9] F. S. Hickernell, IEEE Trans. Sonics Ultrason, SU-32 (1985) 621. [10] S. Basu and A. Dutta, Sens. Actuators, B 22 (1994) 83. [11] M. Wwraback, H. Shen, S. Liang, C. R. Gorla, Y. Lu, Appl. Phys. Lett, 74 (1999) 507. [12] Z. K. Tang, G. K. L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, Appl. Phys. Lett, 72 (1998) 3270. [13] A. Mitra, R. K. Thareja, J. Appl. Phys, 89 (2001) 2025 [14] J. R. Chelikowsky, Solid State Commun, 122 (1997) 351. [15] J. E. Jaff, R. Pandey, and A. D. Kunz, J. Phys. Chem. Solids, 52 (1991) 755. [16] J. W. Tomm, B. Ullrich, X. G. Qiu, Y. Segawa, A. Ohtomo and H. Koinuma, J. Appl. Phys, 87 (2000)1884. [17] H. Kim, Y. Lee, Y. Roh, J. Jung, M. Lee and H. Kwon, IEEE Ultrasonic Symposium, (1998) 323. [18] L. J. Meng and M P dos Santos, 46 (1995) 1001. [19] Y. Yoshino, T. Makino, Y. Katayama and T. Hata, 59 (2000) 538. [20] H. Ieki and M. Kaota, IEEE Ultrasonic Symposium (1999) 281. [21] M. S. Wu, W. C. Shin and W. H. Tsai, J. Phys. D: Appl. Phys. 31 (1998) 943. [22] M. Y. Han and J. H. Jou, Thin Solid Films, 260 (1995) 58. [23] G. J. Exarhos and S. K. Sharma, Thin Solid Films, 270 (1995) 27. [24] P. Nunes, E. Fortunato and R. Martins, Thin Solid Films, 383 (2001) 277. [25] J.L. Vossen, Physics of Thin Films, 9 (1977) 1. [26] P. F. Carcia, R. S. McLean, M. H. Reilly, Journal of the SID, 13 (2005) 547. [27] S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, T. Steiner, Superlattices and Microstructures, 34 (2003) 3. [28] A. Tsukazaki, A. Ohtomo, M. Kawasaki, Appl. Phys. Lett., 88 (2006) 152106. [29] Yasuhiro Igasaki and Hiromi Saito, Thin Solid Films, 199 (1991) 223 [30] Takashi Komaru at al., Jpn. J. Appl. Phys. Part I, 38 (1999) 5796 [31] M.T. Young and S.D. Kenu, Thin Solid Films, 410 (2002) 8 [32] Donald A. Neamen, Semiconductor Physics & Devices, 3rd ed. McGraw Hill, 2003 [33] Juin-Jie Kuo, The study of deposited ITO films on flexible substrates by RF sputtering technology at room temperature, National Sun Yat-sen University Kaohsiung, Taiwan R.O.C. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/29475 | - |
| dc.description.abstract | 我們在玻璃基板上製作出高效能的增強式氧化鋅薄膜電晶體。氧化鋅薄膜是用射頻濺鍍的方式在通氧下低溫沈積而成，接著再將氧化鋅薄膜表面做最佳的氧處理。當電晶體在飽和區且偏壓為VDS=10∼20V 和VGS = 5V時，氧化鋅薄膜電晶體最高之IDS = 0.85 mA，電流開/關比為 1.47×106 ，場效電子遷移率最高為 391.6 cm2/Vs。我們相信這些結果是目前效能最佳的氧化鋅薄膜電晶體之一。 | zh_TW |
| dc.description.abstract | We demonstrate a high-performance enhancement-mode ZnO TFT on a glass substrate. The ZnO thin film is deposited by RF magnetron sputtering with the presence of O2 at low temperature and optimized oxygen passivation conditions on the ZnO surface. When biased at the saturation region VDS = 10~20V and VGS = 5V, the IDS is as high as 0.85mA. The Ion/Ioff ratio is 1.47×106 and field effect mobility as high as 391.6 cm2/Vs. We believe the results are among the best ZnO TFTs ever obtained. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T01:08:03Z (GMT). No. of bitstreams: 1 ntu-96-J94941005-1.pdf: 6871320 bytes, checksum: 976bf78162de74790c54a85fd6cd5b31 (MD5) Previous issue date: 2007 | en |
| dc.description.tableofcontents | 目 錄
第一章 簡介 1-1 背景簡介............................................ 1 1-2 研究動機............................................ 2 1-3 論文架構............................................ 3 第二章 理論基礎 2-1 材料特性與結購...................................... 4 2-1.1 氧化銦錫晶體特性與結構.......................... 4 2-1.2 氧化鋅晶體特性與結構............................ 5 2-2 金屬-氧化物-半導體場效電晶體........................ 9 2-2.1 金屬-氧化層-半導體操作原理及結構................ 9 2-2.2 金屬-氧化層-半導體的操作模式....................10 2-2.3 氧化鋅薄膜電晶體工作原理....................... 12 2-3 濺鍍原理........................................... 15 2-3.1 直流濺鍍....................................... 15 2-3.2 射頻濺鍍....................................... 16 第三章 實驗步驟與方法 3-1 簡介............................................... 18 3-2 實驗材料........................................... 18 3-3 實驗設備........................................... 19 3-3.1 射頻濺鍍機..................................... 19 3-3.2 電漿清洗機..................................... 19 3-3.3 X-ray繞射分析儀................................ 20 3-3.4 原子力掃瞄探針顯微鏡........................... 20 3-4 製作流程................................... 21 第四章 實驗結果與討論 4-1 氧濃度對氧化鋅薄膜電晶體特性之影響................. 24 4-2 基板溫度對氧化鋅薄膜電晶體特性之影響............... 31 4-3 氧處理時間對氧化鋅薄膜電晶體特性之影響............. 38 第五章 結論與未來展望 5-1 結論與未來展望..................................... 50 參考文獻................................................ 51 | |
| dc.language.iso | zh-TW | |
| dc.title | 以最佳化氧處理製作高效能氧化鋅薄膜電晶體之研究 | zh_TW |
| dc.title | High-Performance ZnO Thin Film Transistors with Optimized Oxygen Passivation | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 95-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 蔡永傑(Wing-Kit Choi),李允立(Yun-Li Li) | |
| dc.subject.keyword | 氧化鋅,電晶體,氧化銦錫,氧處理,遷移率, | zh_TW |
| dc.subject.keyword | ZnO,TFT,ITO,Oxygen passivation,mobility, | en |
| dc.relation.page | 52 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2007-07-23 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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