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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 管傑雄 | |
dc.contributor.author | Ying-Chih Lai | en |
dc.contributor.author | 賴盈至 | zh_TW |
dc.date.accessioned | 2021-06-13T00:32:48Z | - |
dc.date.available | 2007-07-27 | |
dc.date.copyright | 2007-07-27 | |
dc.date.issued | 2007 | |
dc.date.submitted | 2007-07-25 | |
dc.identifier.citation | 參考資料
[1] J. C. Campbell, in Germanium Silicon : Physics and Materials : Optoelectronics in Silicon and Germanium Silicon, edited by R. Hull and J. C. Bean (Academic,San Diego,1999) [2] M. A. Reed, R. T. Bate, and K. Bradshaw, J. Vacuum. Sci. Technol. B. 4, 358, (1986) [3] Quantum Dots, edited by Lucjan Jacak, Pawel Hawrylak, Arkadiusz Wojs (Springer, New York, 1998) [4] M.Stoffel, U. Denker, and O. G. Schmidt, Applied Physics Letters, 82, 3236, (2003) [5] Wen-Hao Chang, An-Tai Chou, Wen-Yen Chen, Hsiang-Szu Chang, Tzu-Min Hsu, Zingway Pei, Pang-Shiu Chen, S. W. Lee, Li-Shyue Lai, S. C. Lu and M. –J. Tsai, “Room–temperature electroluminescence at 1.3 and 1.5 um from Ge/Si self-assembled quantum dots”, Appl. Phys. Lett, 83 2958 (2003). [6] Z.Pei, P. S. Chen, L.S.Lai, S.C. Lu , M.-J. Tsai, W. H. Chang, W.Y. Chen, A.T. Chou, and T.M. Hsu, “Room Temperature 1.3 and 1.5 mm Electroluminescence from Si/Ge Quantum dots (QDs)/Si Multi-layers”, Appl. Surf. Sci. 224, 165 (2004). [7] Wen-Hao Chang, Wen-Yen Chen, An-Tai Chou, and Tzu-Min Hsu, Pang Shiu Chen, Zingway Pei and Li-Shyue Lai, “Effects of Spacer Thickness on Optical Properties of Stacked Ge/Si Quantum Dots Grown by Chemical Vapor Deposition”, J. Appl. Phys. 93 4999 (2003). [8] Chih-Hsiung Hsu, “Ge Quantum-dot LED for 1.3~1.5 um Emission Wacelength”, NTU, (2003) [9] 李嗣涔,管傑雄,孫台平。“半導體元件物理”,三民書局,1995 [10] S.M.Sze, “Semiconductor divice phsics and technology” ,New York:Wiley,1985 [11] Donald A. Neamen, “Semiconductor physics and Devices,3/E”,McGraw Hill [12] Y. H. Peng, Chih-Hsiung Hsu, P. S. Chen, M. -J. Tsai, C. H. Kuan, and C. W. Liu, “Electroluminescence evolution of Ge quantum-dot diodes with the fold number”, Appl. Phys. Lett. 85, 6107 (2004). [13] S.W. Lee, L.J. Chen, P. S. Chen, M.-J. Tsai, C.W. Liu, W.Y. Chen, and T.M. Hsu, “Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments”, Appl. Surf. Sci. 224, 152 (2004). [14] C. G. van de Walle and R. M. Martin,“Theoretical Study of Si/Ge Interfaces”, J.Vac. Sci. Technol., vol, B3, p.1256, 1985. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/28976 | - |
dc.description.abstract | 矽/鍺光電元件具有可直接與矽積體電路整合的優點,因此製程上的成本將可獲得降低。此外由於量子結構之異質接面結構的長晶技術進步,近來矽鍺異質接面的光電元件特性已被廣為研究。
在本研究中,使用超高真空化學氣相沉積,成長十週期的Si/Ge量子點結構,並分兩種結構;一種1296(no buffer)就是成長完Ge量子點主動區之後,直接成長P型區;另一種1123(Si buffer)則是在成長完Ge量子點主動區之後,先成長一層輕摻雜的Si buffer,再成長最後的P型區,成長此層的目的在避免P型區影響主動區的摻雜。 我們的論文中將對兩種發光機制作探討。我們首先真對測量出來的發光頻譜(EL)和變溫的發光強度作分析,然後提出可能機制。接下來我們利用製程前退火的方式企圖改變量子點位能井的深度來證實我們所提出來的發光機制是正確的。 | zh_TW |
dc.description.abstract | The advantage of the optical electronic component made up by silicon andgermanium materials is that it could be fully compatible with the Si-based microelectronic chips.
Therefore, the cost of the fabrication could decrease. In addition, the growth techniques for quantum heterojunction structures are in advanced and then the heterojunction structure of silicon or germanium has been studied far and wide recently. In this study, the light-emitting diodes (LEDs) with multi-periods of Si/Ge quantum dots structures are used. The ten periods Si/Ge quantum dots structure are grown by UHV/CVD system .There are two samples. One of our samples is called 1296(no buffer), which is grown P+doped regon right after growing ten periods Si/Ge quantum dots structure.Another sample called 1123(Si buffer),which is grown a layer of Si buffer before growing P+doped regon, is different from 1296(no buffer).To grow the layer of Si buffer is insulate active region from P+doped region. We will focus the mechanism of two samples. The study starts by the measurements of the EL spectra with different temperature. We will discuss the mechanism for our sample. After that, we will use the method of pre-anneal to prove our mechanism is right. | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T00:32:48Z (GMT). No. of bitstreams: 1 ntu-96-R94943044-1.pdf: 3375325 bytes, checksum: d8f7c78c93c582806b38b3d1c694e2ae (MD5) Previous issue date: 2007 | en |
dc.description.tableofcontents | 目錄
口試委員會審定書....................................................................................................I 摘要.........................................................................................III 目錄..........................................................................................................IV 表目錄..........................................................................................................IX 圖目錄..........................................................................................................X 第一章 簡介..........................................................................................................1 第二章 Si/Ge量子點發光二極體簡介...........................................................5 2.1 Ge量子點................................................................................................................5 2.2為什麼使用Ge量子點..........................................................6 2.3 Ge量子點發光二極體之基本操作原理..........................................................8 2.3.1 電激發光(Electroluminescence) ..........................................................8 2.3.2 間接能隙材料之放射性復合(radiative recombination) ...........8 2.3.3 P-I-N 接面結構.............................................................................................9 第三章 發光二極體製程及量測........................................................................11 3.1 製程步驟...............................................................................................................11 3.1.1 清洗樣品.............. ....................................................................... 12 3.1.2 平台(Mesa)微影製程.................................................................................... 12 3.1.3 乾蝕刻製程.....................................................................................………13 3.1.4 負電極金屬蒸鍍.............................................................................................14 3.1.5 透明電極微影製程.........................................................................................14 3.1.6 透明電極金屬蒸鍍與lift-off....................................................................14 3.1.7 正電極微影製程.................................................................................…15 3.1.8 正電極金屬蒸鍍與lift-off........................................................................15 3.1.9 快速熱退火(RTA) .........................................................................................16 3.1.10 金屬接線.......................................................................................................16 3.2 製程前退火.............................................................................................................18 3.3 量測及儀器架設.....................................................................................................19 3.3.1 I-V特性量測....................................................................................................19 3.3.2 E-L頻譜量測...............................................................................................19 3.3.3 發光強度高斯近似方法.............................................................................20 第四章 Si/Ge量子點發光二極體量測結果.................................................... 22 4.1 樣品結構.................................................................................................................22 4.2 I-V特性曲線............................................................................................................24 4.3 退火溫度As-grown變溫電激發光(EL)頻譜與分析..........................................25 4.3.1 退火溫度As-grown 變溫電激發光(EL)頻譜..............................................25 4.3.2 變溫EL頻譜之發光強度高斯近似結果. ......................................................25 4.3.3 結論................................................................................................................26 4.4 退火溫度為700℃、800℃、900℃變溫電激發光(EL)頻譜與分析. ................29 4.4.1 1296(no buffer)退火溫度為700℃、800℃、900℃電激發光(EL)頻譜........................................................................................................29 4.4.2 1296(no buffer)退火溫度為700℃、800℃、900℃變溫EL頻譜之高斯近似計算結果................................................................................................29 4.4.3 1123(Si buffer)退火溫度為700℃、800℃、900℃電激發光(EL)頻譜………......................................................................................................33 4.4.4 1123(Si buffer)退火溫度為700℃、800℃、900℃變溫EL頻譜之高斯近似計算結果.......................... .......................... .......................... ..............33 4.4.5 結論.................................................................................................................37 4.5 退火之後SiGe量子點發光峰值的藍移現象.......................................................38 4.5.1 1296(no buffer)各退火溫度下,SiGe量子點發光峰值的藍移現象..........38 4.5.2 1123(Si buffer)各退火溫度下,SiGe量子點發光峰值的藍移現象..........40 4.5.3 結論.................................................................................................................41 4.6 退火之後SiGe量子點活化能的變化.....................................................................42 4.6.1 1296(no buffer)各退火溫度下,SiGe量子點的活化能變化......................42 4.6.2 1123(Si buffer)各退火溫度下,SiGe量子點的活化能變化...................44 4.6.3 結論........................... .......................... ..........................................................46 4.7 退火之後Si發光強度與溫度的變化. .......................... ..................................... 47 4.7.1 1296(no buffer)不同的退火溫度,Si發光強度與溫度的變化...........47 4.7.2 1123(Si buffer)不同的退火溫度,Si發光強度與溫度的變化...........48 4.7.3 結論.................................................................................................................50 第五章 結果與討論........ ........ ........ ........ ........ ........ ........ ........ ........ ........ .......51 5.1 載子是否通過Ge量子點........ ........ ........ ........ ........ ........ ........ ........ ........ ........51 5.2 空乏區及能帶結構........ ........ ........ ........ ........ ........ ........ ........ ........ ........ .......52 5.3 Ge量子點的發光機制及其與溫度響應........ ........ ........ ........ ........ ........ ........ ...54 5.4 Si的發光機制........ ........ ........ ........ ........ ........ ........ ........ ........ ........ ........ ......55 5.4.1 Si buffer的影響........ ........ ........ ........ ........ ........ ........ ........ ........ ........ ...55 5.4.2 1123(Si buffer)第一段Si buffer放光與溫度的響應的影響.............55 5.3.3 1296(no buffer)、1123(Si buffer) Si spacer的放光機制以及其與溫度的響應............. ............. ............. ............. ............. ............. ............. .......57 第六章 結論............. ............. ............. ............. ............. ............. ............. .............59 6.1 1296(no buffer)試片發光機制............. ............. ............. ............. ............. ......59 6.2 1123(Si buffer)試片發光機制............. ............. ............. ............. ............. ......59 參考資料............. ............. ............. ............. ............. ............. ............. ............. ......60 表目錄 表3.1 樣品清潔步驟............. ............. ............. ............. ............. ............. ............. 12 表3.2 樣品背面電極的蒸鍍金屬及其參數............. ............. ............. .............14 表3.3 樣品透明電極的蒸鍍金屬及其參數............. ............. ............. ............. .......15 表3.4 樣品正電極的蒸鍍金屬及其參數............. ............. ............. ..................15 表3.5 快速熱退火的參數............. ............. ............. ............. ............. ............. .......16 表3.6 製程前快速熱退火的參數............. ............. ............. ..................18 表4.1 1296(no buffer)與1123(Si buffer)試片各層摻雜濃度及厚度...........23 表4.2 1296(no buffer)各退火溫度,Ea(SiGe)的分析結果、SiGe在測量溫度 40K的發光峰值以及兩者相加的和, Si的開始發光時的發光峰值............ ........43 表4.3 1123(Si buffer)各退火溫度,Ea(SiGe)的分析結果、SiGe在測量溫度 40K的發光峰值以及兩者相加的和, 第二段Si的開始發光時的發光峰值.........45 表5.1 室溫、熱平衡時樣品的空乏區寬度......... ......... ......... ......... ......... ......... .......52 圖目錄 圖1.1 Si/SiGe光電積體電路......... ......... ......... ......... ......... ......... ......... ......... ......2 圖1.2 Si、Ge、SiGe的間接能隙能帶圖......... ......... ......... ......... ......... ......... ......... .2 圖1.3 試片結構圖(a)1296試片沒有上層矽緩衝層(b)1123試片有上層矽緩衝層,其目的在隔離P型區摻雜濃度對主動層的影響......... ......... ......... .........4 圖2.1 自我組成Ge 量子點機制示意圖......... ......... ......... ......... ......... ......... .........6 圖2.2 SiGe的能隙隨Ge濃度及其結構的變化圖......... ......... ......... ......... ......... .....7 圖2.3(a)平面SiGe層造成較大能隙偏移(b)形成Ge量子點後可以造成較小的能隙偏移......... ......... ......... ......... ......... ......... ......... ......... ......... ......... .........8 圖2.4 Ge量子點發光二極體操作原理圖結構......... ......... ......... ......... ......... .......10 圖3.1 (a)樣品清洗 (b)平台微影 (c)乾蝕刻 (d)極金屬蒸鍍 (e)透明電極微影 (f)透明電極金屬蒸鍍 (g)正極金屬微影 (h)正極金屬蒸鍍...................11 圖3.2 製程光罩圖樣 (a)平台 (b)透明電極(c)正電極.....................................13 圖3.3 此發光二極體的示意圖............................. ............................. .......................17 圖3.4 此發光二極體的俯視圖........................... ........................... ...........................17圖3.5 量測I-V特性曲線的系統架設........................... ........................... ................19 圖3.6 量測EL頻譜的系統架設........................... ........................... ...........................20 圖3.7 高斯近似示意圖........................... ........................... ........................... .......... 21 圖4.1 試片結構圖(a)1296試片沒有上層矽緩衝層(b)1123試片有上層矽緩衝層,其目的在隔離P型區摻雜濃度對主動層的影響..............................................23 圖4.2 元件I-V特性曲線 (a)線性座標(linear scale) (b)對數座標(log scal) ...................................................... ........................................... .......................24 圖4.3 1296(no buffer)不同溫度的EL頻譜.......................... ..........................27 圖4.4 1123(Si buffer)不同溫度的EL頻譜.......................... ..........................27 圖4.5 1296 (no buffer) Si、Ge發光強度與溫度變化圖..................................28 圖4.6 1123(Si buffer) Si、Ge發光強度與溫度變化圖.......................... .................28 圖4.7 1296(no buffer)退火溫度700℃,不同溫度的EL頻譜.............................30 圖4.8 1296(no buffer)退火溫度800℃,不同溫度的EL頻譜...............................30 圖4.9 1296(no buffer)退火溫度900℃,不同溫度的EL頻譜..............................31 圖4.10 1296(no buffer)退火溫度700℃, Si、SiGe發光強度與溫度變化圖.......31 圖4.11 1296(no buffer)退火溫度800℃, Si、SiGe發光強度與溫度變化圖.......32 圖4.12 1296(no buffer)退火溫度900℃, Si、SiGe發光強度與溫度變化圖.......32 圖4.13 1123(Si buffer)退火溫度700℃,不同溫度的EL頻譜....... ....... ....... .......34 圖4.14 1123(Si buffer)退火溫度800℃,不同溫度的EL頻譜....... ....... ....... ....... ..35 圖4.15 1123(Si buffer)退火溫度900℃,不同溫度的EL頻譜....... ...... ....... .......35 圖4.17 1123(Si buffer)退火溫度800℃, Si、SiGe發光強度與溫度變化圖.......36 圖4.16 1123(Si buffer)退火溫度700℃, Si、SiGe發光強度與溫度變化圖.......36 圖4.18 1123(Si buffer)退火溫度900℃, Si、SiGe發光強度與溫度變化圖...... 37 圖4.19 SiGe量子點能量井輻射複合的示意圖....... ....... ....... ....... ....... ....... ....... .38 圖4.20 1296(no buffer)各退火溫度在量測溫度40K、電流50mA,正規化後的EL頻譜....... ....... ....... ....... ....... ....... ....... ....... ....... ....... ....... ....... ....... ....... ....39 圖4.21 1296(no buffer) 不同退火溫度,SiGe量子點的頻譜峰值......................39 圖4.22 1296(no buffer)各退火溫度在量測溫度40K、電流50mA,正規化後的EL頻譜................. ................. ................. ................. ................. ................. ......40 圖4.23 1123(Si buffer) 不同退火溫度,SiGe量子點的頻譜峰值......................41 圖4.24 Ea的示意圖..................... ..................... ..................... ..................... ..............42 圖4.25 1296(no buffer)退火溫度700℃,Ea分析結果................. ................. ..........43 圖4.26 1296(no buffer)各退火溫度下,SiGe量子點的Ea......................................44 圖4.27 1123(Si buffer)退火溫度700℃,Ea分析結果...................... ......................45 圖4.28 1123(Si buffer)各退火溫度下,SiGe量子點的Ea...................... .................46 圖4.29 1296(no buffer)各退火溫度, Si發光強度與溫度變化......................47 圖4.30 1296(no buffer)各退火溫度下,Si開始發光的溫度................................48 圖4.31 1123(Si buffer)各退火溫度, Si發光強度與溫度變化.......................49 圖4.32 1123(Si buffer)各退火溫度下,Si開始發光的溫度...............................49 圖5.1 載子行徑示意圖........................... ........................... ........................... ............51圖5.2 室溫熱平衡時試片的能帶圖 (a)試片1296(no Suffer)(b)試片1123(Si buffer) ........................... ........................... ............................ .......................53 圖5.3 試片1123(Si buffer)發光機制示意圖..........................................................56圖5.4 試片1296 (no buffer)發光機制示意圖................... ................... ..................57 | |
dc.language.iso | zh-TW | |
dc.title | 鍺量子點發光二極體
有無矽緩衝層之電激發光特性探討 | zh_TW |
dc.title | Electroluminescence properties of
Ge dots LEDs with or without Si buffer layer | en |
dc.type | Thesis | |
dc.date.schoolyear | 95-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 陳俊吉,孫允武,林致廷,陳邦旭 | |
dc.subject.keyword | 矽/鍺光電元件,矽積體電路,矽鍺異質接面,Si/Ge量子點,製程前退火,矽緩衝層,電激發光頻譜, | zh_TW |
dc.subject.keyword | Si/Ge optical electronic device,Si-based microelectronic chips,heterojunction structure,Si/Ge quantum dots,pre-anneal,Electroluminescence, | en |
dc.relation.page | 61 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2007-07-26 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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