以奈米粒子與奈米結構製作矽基摻鉺發光元件之研究

Abstract

在工程與光通訊的很多應用中，奈米技術給了許多機會來提供解決現今大量資料傳輸的問題。隨著對奈米技術的熱烈研究及對光通訊的需求，使用奈米粒子來製作矽基光通訊元件的新製造方法在這篇論文中被提出來。這種元件的製作方法是先混合旋塗玻璃及奈米粒子的發光層溶液，再利用旋轉塗佈的方式沉積在矽基板上。我們是用矽的原因是因為矽在現今積體電路工業上扮演著領導者的角色。 發光層發出的光波長是與1530nm相符合，在光通訊系統中是很重要的波段。發光層的主要組成為鉺離子與主材料。其中，鉺離子的來源是氧化鉺奈米粒子。主材料是用已經廣泛地使用在半導體製程的旋塗玻璃(SOG)來實行。也有包括像五氧化二磷、鋁、矽、氧化鐿、氧化釔及氧化鋁奈米粒子的共同摻雜在發光層內以修正其物理特性及改善發光效率。這些共同摻雜的影響也會被研究，並探討混合不同種類奈米粒子對發光行為的影響。為了讓發光層內鉺離子具有光活化及其他的化學反應的發生，在製程中熱退火是必須的。我們用元件放入高溫爐加熱的方式來達到這個目的。我們也做出多層奈米結構的發光元件，並探討各種不同的多層結構對於發光行為的影響。我們使用電子束蒸鍍(E-gun evaporation)的方式在元件上鍍上一貴金屬薄膜，並利用此薄膜增強鉺離子的發光效率。除此之外，我們也利用各種不同材料分析的方式來分析貴金屬薄膜增強鉺離子發光效率的物理機制。 與離子佈值、固相磊晶和其他技術做比較，我們的製造技術簡單且低成本。而且能與目前的積體電路製造技術相整合，對於日後光電與電子產業的結合非常有幫助，值得做更進一步的探討且具有發展的潛力。

While using a lot of the Engineering and optical communication, nanotechnology has offered a lot of chances and solved the problem that a large amount of transmitted information .With the popular research of nanotechnology and demand for the optical communication , a new manufacturing approach of the silicon-base optical communication device made by nanoparticles is put forward in this thesis. This kind of device manufacturing method is to fabricate the light-emitting layer in mixing nanoparticles and Spin-on Glass (SOG) first, and then utilize the way of the spin coating to deposit on the silicon base plate. The reason of using silicon is because the silicon is acting the part of leader on the integrated circuit industry now. The wavelength emitted by light-emitting layer is 1530nm, it is very important wave band in the optical communication system. The main composition of light-emitting layer is erbium ion and host material. The source of the erbium ion is erbium oxide (Er2O3) nanoparticle. Host material is Spin-On glass that has widely used in semiconductor manufacturing process. We also use other nanoparticles including P2O5, Al, Si, Yb2O3, Y2O3 and Al2O3 to endure the mixing commonly for modifying its physical characteristic and improving the light-emitting efficiency. These influence mixed together will be studied too, and will study the influence of light-emitting behavior in mixture of different kinds of nanoparticle. For erbium ion in light-emitting layer with light activated process and other chemical reaction, it is necessary to anneal the devise with high temperature in fabrication process. We achieve this goal by heating devise in the high-temperature furnace is heated. We fabricate the multi-layer luminescence device in nanostructures too, and study the influence of light-emitting behavior in all kinds of multi-layer nanostructures. We use the E-gun evaporation method to evaporate a noble metal thin film on the device, and utilize this thin film to strengthen the luminescence efficiency of the erbium ion. In addition, we use different kinds of material analysis method to analyses the physics mechanism of luminescence efficiency of erbium ion strengthened by noble metal thin film. To compare with other kinds of fabrication technology, like ion implantation and solid-state epitaxy, our of manufacturing technology is simple and low cost of. And can combine with the present integrated circuit manufacturing technology, extraordinary to the combination of the photonic and electronic industry in the future. Helpful, worth doing the further discussion and potentiality with development