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標題: | 矽奈米線定向成長機制之研究 The Mechanisms of Electric-Field-Directed Growth of Silicon Nanowires |
作者: | I-Chen Tung 童奕澄 |
指導教授: | 李嗣涔(Si-Chen Lee) |
關鍵字: | 矽奈米線,奈米線,矽, silicon nanowire,nanowire,silicon,SiNW,NW, |
出版年 : | 2007 |
學位: | 碩士 |
摘要: | 本論文研究利用化學氣相沈積法經由VLS成長機制來成長電場導向及自組裝之未摻雜的矽奈米線。並觀察到矽奈米線會受到外加於相鄰電極的局部電場影響,而呈現岀較有條理的導向成長結果。由電場模擬可以合理解釋兩種電極結構所造成矽奈米線之不同的生長結果。最後,我們成功利用電場導向成長製備矽奈米線,並可直接量測矽奈米線之電流電壓特性。 Electric-field-directed growth and self-assembly of undoped silicon nanowires by chemical-vapor deposition via the vapor-liquid-solid (VLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD) system is demonstrated. The nanowires are seen to respond to the presence of a localized DC electric field set up between adjacent electrode structures. It leads to improve silicon nanowires alignment and organization while transcending a trench. Simulation of the electric field distribution under two different electrode structures can reasonably explain the different growth results. Finally, the electric-field-directed growth of the undoped silicon nanowires was achieved successfully. The results of the in-situ electrical measurement of as-grown silicon nanowires are also presented. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/28653 |
全文授權: | 有償授權 |
顯示於系所單位: | 電子工程學研究所 |
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