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| ???org.dspace.app.webui.jsptag.ItemTag.dcfield??? | Value | Language |
|---|---|---|
| dc.contributor.advisor | 林浩雄(Hao-Hsiung Lin) | |
| dc.contributor.author | Chia-En Wu | en |
| dc.contributor.author | 吳嘉恩 | zh_TW |
| dc.date.accessioned | 2021-06-13T00:03:07Z | - |
| dc.date.available | 2007-08-02 | |
| dc.date.copyright | 2007-08-02 | |
| dc.date.issued | 2007 | |
| dc.date.submitted | 2007-07-29 | |
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Ravetz, “InAs (P, Sb)/ InAsSb LEDs emitting in the 3-4μm range at room temperature,” 11th International Conference on Indium Phosphide and Related Materials, pp. 95-98, 1999. [12]Minoru Toda, Thomas J. Zamerowski, Ivan Landy, and Ramon U. Martinelli, “Laser Materials for the 0.67μm to 2.5μm Range,” NASA Contractor Report 4050 HDL-CR-86-351-1, 1987. [13]M. Aydaraliev, N. V. Zotova, S. A. Karandashov, B. A. Matveev, M. A. Remennyi, N. M. Stus, and G. N. Talalakin, “6W InGaAsSb(Gd)/ InAsSbP double-heterostructure diode lasers emitting at λ=3.3μm,” Appl. Phys. Lett., vol. 81, pp. 1166-1167, 2002. [14]M. Yin, A. Krier, S. Krier, R. Jones, and P. Carrington, “Mid-Infrared diode lasers for free space optical communications,” Proc. of SPIE, vol. 6399 , pp. 63990C-1-63990C-6, 2006. [15]R. M. Lin, S. F. Tang, S. C. Lee, “Room temperature unpassivated InAs p-i-n photodetectors grown by molecular beam epitaxy,” IEEE Transactions on electron devices, vol. 44, 1997. [16]H. K. Choi, Long-wavelength infrared semiconductor lasers, John Wiley & sons, 2004. [17]A. Krier, and V. V. Sherstney, “LEDs for formaldehyde detection at 3.6μm,” J. Phys. D: Appl. Phys., vol. 34, pp. 428-432, 2001. [18]S. S. Kizhayev, N. V. Zotova, S. S. Molchanov, B. V. Pushnyi, and Yu. P. Yakovlev, “Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE,” J. Cryst. Growth, vol. 248, pp. 296-300, 2003. [19]B. Matveev, N. Zotova, S. Karandashov, M. Remennyi, N. Llinskaya, N. Stus, V. Shustov, G. Talalakin, and J. Malinen, “InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range,” IEE Proc. –Optoelectron, vol. 145, pp. 254-256, 1998. [20]A. A. Popov, M. V. Stepanov, V. V. Sherstney, and Yu. P. Yakovlev, “InAsSb light-emitting diodes for the detection of CO2(λ=4.3μm),” Tech. Phys. Lett., vol. 24, pp. 596-598, 1998. [21]N. V. Zotova, S. S. Kizhaev, S. S. Molchanov, T. B. Popova, and Yu. P. Yakovlev, “Long-wavelength light-emitting diodes(λ=3.4-3.9μm) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy,” Semicond., vol.34, 2000. [22]X. Y. Gong, H. Kan, T. Makino, T. Lida, K. Watanabe, Y. Z. Gao, M. Aoyama, N. L. Rowell , and T. Yamaguchi, “Room-temperature mid-infrared light-emitting diodes from liquid-phase epitaxial InAs/ InAs0.89Sb0.11/ InAs0.80P0.12Sb0.08 heterostructures,” Jpn. J. Appl. Phys., vol. 39, pp. 5039-5043, 2000. [23]E. M. Lysczek, S. E. Mohney, and T. N. Wittberg, “Shallow ohmic contacts to p-type InAs,” Electronics Letters 11th Dec. 2003, vol.39, pp. 1866-1867, 2003. [24]A. R. Clawson, “Guide to references on III-V semiconductor chemical etching,” Mater. Sci. Eng., vol.31, pp. 1-438, 2000. [25]A. Krier, V. V. Sherstnev, Z. Labadi, S. E. Krier, and H. H. Gao, “Interface electroluminescence from InAs Quantum well LEDs grown by rapid slider liquid phase epitaxy, ” J. Phys. D: Appl. Phys., vol.33, pp. 3156-3160, 2000. [26]M. Aidaraliev, N. V. Zotova, N. D. Llinskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus, and G. N. Talalakin, “InAs and InAsSb LEDs with built-in cavities,” Semicond. Sci. Technol., vol. 18, pp. 269- 272. 2003. [27]A. Krier and V V Sherstnev, ”Powerful interface light emitting diodes for methane gas detection,” J. Phys. D: Appl. Phys., vol. 33, pp.101-106, 2000. [28]A. Krier and V V Sherstnev, H H Gao, “A novel LED module for the detection of H2S at 3.8μm,” J. Phys. D: Appl. Phys., vol. 33, pp. 1656- 1661, 2000. [29]S. M. Sze, Physics of semiconductor devices, John Wiley & sons, 1983. [30]S. J. Sweeney, A. F. Phillips, A. R. Adams, E. P. O’Reilly, and P. J. A. Thijis, “The effect of temperature dependent process on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers,” IEEE Photon. Tech. Lett., vol. 10, pp.1076-1078, 1998. [31]A. F. Philips, S. J. Sweeny, A. R. Adams, and P. J. A. Thijis, “The temperature dependence of 1.3- and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers”, IEEE J. Select. Topic Quantum Electron., vol.5, pp.401-412, 1999. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/28227 | - |
| dc.description.abstract | 本論文之研究以銻磷砷化銦/銻砷化銦多重量子井製作中紅外線發光二極體及其光電特性測定。我們利用氣態源分子束磊晶法成長第一型銻磷砷化銦/銻砷化銦多重量子井結構於n-type砷化銦基板上，並以濕蝕刻法進行平台隔離的製程。蝕刻溶液中，鹽酸+雙氧水(30%)+水以1:1:8的比例混合對n-type與p-type的銻磷砷化銦材料具有選擇性蝕刻特性，其蝕刻速率相差11倍，而磷酸+雙氧水(30%)+水的蝕刻液僅有2倍之差。在製作接面金屬而進行熱退火步驟時，若退火溫度超過400oC時會造成元件損壞，I-V曲線變差。從發光二極體的變溫電激發螢光頻譜實驗當中觀察發現，在50K以上時發光二極體的發光強度會急遽衰減，至300K時約衰減500倍。從L-I的分析可以看出此發光二極體在低溫時的復合以自發性放光復合為主，至高溫時逐漸轉為歐傑復合為主，而導致發光二極體的發光強度極易受到溫度的影響。本實驗成功以氣態源分子束磊晶成長在室溫時的放光波長約為3.7μm，以脈衝模式在責任週期為20%，電流密度為10A/cm2時，發光功率可以達10μW的發光二極體元件。 | zh_TW |
| dc.description.abstract | In this study, InAsPSb/InAsSb multiple quantum well light emitting diodes grown by gas source molecular beam epitaxy were fabricated and their EL properties were investigated. Before processing device sample, InAsPSb etching solution and etching rate were tested. We found that the etching rate was different on n-type and p-type InAsPSb. Using HCl:H2O2(30%):H2O(1:1:8) as etching solution, the rate on n-type InAsPSb is 11 times faster than the rate on p-type InAsPSb while only 2 times difference using H3PO4:H2O2(30%):H2O(1:1:8) on n-type and p-type InAsPSb. The annealing temperature should be below 400oC or diode would be broken. From temperature dependent EL measurement we found the intensity of LEDs drastically decayed above 50K, and 500 times weaker at 300K. The LI analysis shows that spontaneous emission dominates at low temperature while at high temperature Auger recombination dominates and represents the high temperature sensitivity of emission intensity. We have successfully fabricated LEDs whose emitting power is 10μW in pulse mode with 20% duty cycle at room temperature when injection current density is 10A/cm2. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T00:03:07Z (GMT). No. of bitstreams: 1 ntu-96-R94943125-1.pdf: 1091219 bytes, checksum: 42c1a1581c9e7a4b0c6870b381bfc2e9 (MD5) Previous issue date: 2007 | en |
| dc.description.tableofcontents | 中文摘要 I
Abstract II 目錄 III 附表索引 V 附圖索引 VI 第1章 簡介 1 第2章 銻磷砷化銦發光二極體實作 7 2.1 銻磷砷化銦塊材的成長 7 2.2 霍爾效應量測 7 2.3 發光二極體製程 8 2.4 X光繞射量測 11 2.5 量測系統的設置 12 2.5.1 電壓電流特性量測 12 2.5.2 電激發螢光光譜量測(Electroluminescence, EL) 12 2.5.3 光功率對電流量測系統(Light power-current,LI) 13 第3章 實驗結果與討論 19 3.1 樣品摻雜濃度 19 3.2 銻磷砷化銦的蝕刻 21 3.3 歐姆接點的製作 21 3.4 樣品電性測試 22 3.5 光激發螢光頻譜(PL)的量測 23 3.6 電激發螢光頻譜(EL)的量測 25 3.7 LED自發性發光功率對電流的變溫量測(LI) 26 第4章 結論 54 參考文獻 55 | |
| dc.language.iso | zh-TW | |
| dc.subject | 中紅外線 | zh_TW |
| dc.subject | 發光二極體 | zh_TW |
| dc.subject | 多重量子井 | zh_TW |
| dc.subject | 銻磷砷化銦 | zh_TW |
| dc.subject | InAsPSb | en |
| dc.subject | MIR | en |
| dc.subject | mid-infrared | en |
| dc.subject | light emitting diode | en |
| dc.subject | LED | en |
| dc.subject | MQW | en |
| dc.title | 銻磷砷化銦/銻砷化銦多重量子井發光二極體的研究 | zh_TW |
| dc.title | Study on InAsPSb/InAsSb multiple quantum well light emitting diode | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 95-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 涂元光,毛明華(Ming-Hua Mao),王智祥 | |
| dc.subject.keyword | 中紅外線,發光二極體,銻磷砷化銦,多重量子井, | zh_TW |
| dc.subject.keyword | MIR,InAsPSb,MQW,LED,light emitting diode,mid-infrared, | en |
| dc.relation.page | 59 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2007-07-31 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| Appears in Collections: | 電子工程學研究所 | |
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| ntu-96-1.pdf Restricted Access | 1.07 MB | Adobe PDF |
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