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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/27919完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 張培仁 | |
| dc.contributor.author | Chia-Hua Chu | en |
| dc.contributor.author | 朱家驊 | zh_TW |
| dc.date.accessioned | 2021-06-12T18:27:54Z | - |
| dc.date.available | 2010-08-28 | |
| dc.date.copyright | 2007-08-28 | |
| dc.date.issued | 2007 | |
| dc.date.submitted | 2007-08-07 | |
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Int. Semicondictor Conf. pp 165-168 [26] Pacheco S P, Katehi L P B and Nguyen C T C 2000 Design of low actuation voltage RF MEMS switch Proc. IEEE MTT-S Int. Microwave Symp. Digest vol 1 pp 165-168 [27] Balaraman D, Bhattacharya S K, Ayazi F and Papapolymerou J 2002 Low-cost low actuation voltage copper RF MEMS switches Proc. IEEE MTT-S Int. Microwave Symp. Digest vol 2 pp 1225-1228 [28] Kuwabara K, Sato N, Shimamura T, Morimura H, Kodate J, Sakata T, Shigematsu S, Kudou K, Machida K, Nakanishi M and Ishii H 2006 RF CMOS-MEMS Switch with Low-Voltage Operation for Single-Chip RF LSIs IEDM ’06 Int. 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PHYS. 89 6389-95 [55] Lee S H, Yoon K H, Cheong D S and Lee J K 2003 Relationship between residual stress and structural properties of AlN films deposited by r.f. reactive sputtering Thin Solid Films 435 193-198 [56] Oberhammer J and Stemme G 2006 Active opening force and passive contact force electrostatic switches for soft metal contact materials IEEE J. Microelectromech. Syst. 15 1235-42 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/27919 | - |
| dc.description.abstract | 微機電開關相對於半導體開關有低插入損失、高隔絕度與低耗損功率等優點，其中靜電驅動式微機電開關由於其相對快切換速度與高積體電路標準製程相容性，使其最廣泛被研究與應用，然而，靜電式微機電開關最大缺點便是其過高的臨界驅動電壓。目前降低臨界驅動電壓的方法主要分為降低電極空氣間距與降低結構等效彈簧常數，降低電極空氣間距會伴隨降低微機電開關的高頻特性，而降低結構等效彈簧常數會降低微機電開關的切換速度。因此，必須在高頻特性、臨界驅動電壓與開關切換速度之間找到最佳之微機電開關結構設計。
由理論與模擬分析可知，在相同電極間距、相同的結構第一共振頻率，比較施加電壓與切換時間，靜電驅動微機電開關以薄而短的結構優於厚而長的結構。在相同結構的厚度與電極間距下，無束縛樑擁有最佳之施加電壓與切換時間之特性。在維持相同的高頻訊號電極間距下，非均勻間距結構之施加電壓與切換時間特性皆遠優於一般均勻電極間距且結構厚度相同的微機電開關。受梯度應力作用之懸臂樑結構，在摒除犧牲層所造成之空氣間距影響，在施加電壓與切換時間上有極佳之表現。 利用殘留應力所產生之挫曲與翹曲現象，可成功製作低臨界驅動電壓與高隔絕度之微機電開關。由均佈壓應力所導致的挫曲現象抵消了由犧牲層所產生的空氣間距，有效降低了開關所需的驅動電壓，而梯度應力所形成的等效彎矩提高的懸臂樑末端的翹曲高度，同時提高了開關的隔絕度。十字形結構挫曲方向主要受到結構中懸臂樑寬度與兩端束縛樑寬度比例的影響。目前量測所得之最小臨界驅動電壓為10.2V。在開關之高頻特性方面，於2.4GHz時插入損失為0.18dB，隔絕度為-52dB。實驗結果顯示，若能適當控制殘留應力的大小，低臨界驅動電壓與高隔絕度之靜電式微機電開關可被成功實現。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2021-06-12T18:27:54Z (GMT). No. of bitstreams: 1 ntu-96-D91543010-1.pdf: 3044094 bytes, checksum: 3b7c879912098a9138b3b3621063d934 (MD5) Previous issue date: 2007 | en |
| dc.description.tableofcontents | 謝誌 i
摘要 ii Abstract iii 目錄 v 圖目錄 vi 表目錄 ix 第一章 序論 1 1.1 前言 1 1.2 微機電微波開關之簡介 2 1.3 研究動機 3 1.4 微機電微波開關專利分析 5 1.5 文獻回顧 9 1.6 論文架構 11 第二章 靜電驅動微機電開關之臨界驅動電壓與切換時間的分析模擬 12 2.1 一維等效模型 12 2.2 懸臂樑與兩端束縛樑 15 2.3 無束縛樑 29 2.4 蹺蹺板形式 34 2.5 餐叉狀結構 37 2.6 梯度應力樑結構 40 第三章 新型微機電開關之設計 45 3.1 新型微機電開關設計目的 45 3.2 殘留應力 48 3.3 微機電開關機械結構設計 56 3.4 微機電開關特性設計 61 第四章 製程與結果量測 64 4.1 製程流程 64 4.2 製程結果 70 4.3 S參數與臨界驅動電壓之量測架構與結果 73 4.4 微機電開關切換時間之量測架構與量測結果 78 第五章 結論與未來展望 86 5.1 結論 86 5.2 未來展望 87 | |
| dc.language.iso | zh-TW | |
| dc.subject | 射頻 | zh_TW |
| dc.subject | 微機電 | zh_TW |
| dc.subject | 開關 | zh_TW |
| dc.subject | 切換速度 | zh_TW |
| dc.subject | 驅動電壓 | zh_TW |
| dc.subject | actuation voltage | en |
| dc.subject | MEMS | en |
| dc.subject | RF | en |
| dc.subject | switch | en |
| dc.subject | switching speed | en |
| dc.title | 微機電微波開關之研究 | zh_TW |
| dc.title | Study on Micromachined Microwave Switches | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 95-2 | |
| dc.description.degree | 博士 | |
| dc.contributor.coadvisor | 施文彬 | |
| dc.contributor.oralexamcommittee | 楊龍杰,戴慶良,胡毓忠,李其源 | |
| dc.subject.keyword | 微機電,開關,切換速度,驅動電壓,射頻, | zh_TW |
| dc.subject.keyword | MEMS,switch,switching speed,actuation voltage,RF, | en |
| dc.relation.page | 98 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2007-08-08 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 應用力學研究所 | zh_TW |
| 顯示於系所單位： | 應用力學研究所 | |
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