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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 王暉 | |
dc.contributor.author | Bo-Jiun Huang | en |
dc.contributor.author | 黃柏鈞 | zh_TW |
dc.date.accessioned | 2021-06-12T18:01:58Z | - |
dc.date.available | 2013-01-30 | |
dc.date.copyright | 2008-01-30 | |
dc.date.issued | 2008 | |
dc.date.submitted | 2008-01-24 | |
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Parra, “Design of an original K-band active balun with improved broadband balanced behavior”, IEEE Microwave and Wireless Components Letters, vol.15, pp.280-282, April. 2005 [12] S. C. Cripps, RF Power Amplifiers for Wireless Communication, Artech House, 1999 [13] B. Razavi, RF microelectronics, Prentice-Hall, Inc., 1998 [14] David M. Pozar, Microwave and RF design of wireless systems, John Wiley & Sons, Inc.2001 [15] K. Yamauchi, K. Mori, M. Nakayama, Y. Mitsui and T. Takagi, “A microwave miniaturized linearizer using a parallel diode with a bias feed resistance,” IEEE Trans, Microwave Theory Tech., vol. 45, pp. 2431-2435, Dec. 1997. [16] Y. S. Noh, T.W. Lee, C. S. Park, “Linearized high efficient HBT power amplifier module for L-band application”, 2001. 23rd Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, , pp. 197 – 200 [17] J.- C. Wen, L.- L. Sun, “A GaAs HBT Power Amplifier with a Newly Active Bias Linearizer for W-CDMA Terminals”, 2006. ICSICT '06. 8th International Conference on Solid-State and Integrated Circuit Technology, pp.1727-1729, 2006 [18] A. k. Mrunal, M. Shirasgaonkar, R. Patrikar, “Highly Linear and Efficient AlGaAs/GaAs HBT Power Amplifier with Integrated Linearizer”, IEEE Asia Pacific Conference on Circuits and Systems, 2006. APCCAS 2006. pp.1442-1445 [19] J. H. Kim, Y. S. Noh, C.S. Park, “MMIC power amplifier adaptively linearized with RF coupled active bias circuit for W-CDMA mobile terminals applications”, 2003 IEEE MTT-S International Microwave Symposium Digest, vol. 3, pp.2209-2212, [20] J. F. Cushman, F. Occhiuti, E.M. McDonagh, M.E. Hines and P.W. Staecker, “High power epitaxially-stacked varactor diode multipliers: performance and applications at W-band”, IEEE MTT-S International Microwave Symposium Digest, vol. 2, pp. 923-926, May 1990 [21] C. Rauscher, “High-Frequency Doubler Operation of GaAs Field-Effect Transistors”, IEEE Trans, Microwave Theory Tech., vol. 83, pp. 462-473, Jun. 1983. [22] A. Werthof, H. Tischer, T. Grave, ” High gain PHEMT frequency doubler for 76 GHz automotive radar” IEEE MTT-S International Microwave Symposium Digest, , vol. 1, pp. 107-109, May. 2001. [23] T. Y. Wong, Fundamentals of Distributed Amplification, Artech House, 1993 [24] Y.-L Tang, P.-Y. Chen and Huei Wang,. “A broadband PHEMT MMIC distributed doubler using high-pass drain line topology”, IEEE Microwave and Wireless Components Letters, vol. 14, pp. 201-203, May. 2003. [25] M. Ferndahl, B. Motlagh, and H. Zirath, “40 and 60 GHz Frequency Doublers in 90-nm CMOS,”2004 IEEE MTT-S Int Microwave Symp. Dig., vol. 1,pp.179-182,June 2004. [26] K.- L. Deng and Huei Wang,. “A miniature broad-band pHEMT MMIC balanced distributed doubler”, IEEE Trans, Microwave Theory Tech. vol.51, pp.1257-1261, April 2003 [27] B. Piernas, H. Hayashi, K. Nishikawa, K. Kamogawa, and T. Nakagawa, “A broadband and miniaturized V-band PHEMT frequency doubler, ”IEEE Microwave Guided Wave Lett., vol. 10, pp. 276–278, July 2000. [28] .S. Emami, C. H. Doan, A. M. Niknejad, R. W. Brodersen, “A Highly Integrated 60GHz CMOS Front-End Receiver” IEEE International Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers., pp. 190-191 [29] J. Staudinger and M. Friesen, “Fully integrated double balanced MMIC mixer using a star arrangement of diodes for extended IF performance,” IEEE MTT-S International Microwave Symposium Digest, vol. 3, pp. 1163-1166, June 1992. [30] M. Kawashima, T. Nakagawa and K. Araki, “A novel broadband active balun”, 33rd European Microwave Conference, vol.2, pp.495-498, Oct. 2003 [31] D.- H. Lee, J. Han, C. Park and S. Hong, “A CMOS Active Balun Using Bond Wire Inductors and a Gain Boosting Technique”, IEEE Microwave and Wireless Components Letters, vol.17, pp.676-678, Sept. 2007 [32] H. Ma, S. J. Fang, F. Lin and H. Nakamura, “Novel active differential phase splitters in RFIC for wireless applications,” IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,pp. 51-54, June. 1998 [33] C. Viallon, D. Venturin, J. Graffeuil and T. Parra, “Design of an original K-band active balun with improved broadband balanced behavior”, IEEE Microwave and Wireless Components Letters, vol.15, pp.280-282, April. 2005 [34] M. Kawashima, T. Nakagawa and K. Araki, “A novel broadband active balun”, 33rd European Microwave Conference, vol.2, pp.495-498, Oct. 2003 [35] E. Tiiliharju and K.A.I. Halonen, K, “An active differential broad-band phase splitter for quadrature-modulator applications,” IEEE Trans, Microwave Theory Tech., vol. 53, pp. 679-686, Feb. 2005. [36] G. Gonzalez, Microwave transistor amplifiers analysis and design, 2nd ed: Prentice-Hall, Inc., 1997. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/27346 | - |
dc.description.abstract | 在本論文中,探討了一個加了線性化機制的功率放大器,及一個分佈式二倍頻器與主動平衡不平衡轉換器。在通訊系統當中,功率放大器為不可或缺的元件,功率放大器通常置於發射器的前端,用來放大射頻訊號再利用天線發射出去。因此提升功率放大器的線性度及效率成為當今設計功率放大器的重要課題。此一功率放大器採用穩懋半導體2微米砷化鎵HBT製程操作在5.8 GHz,設計時在基極端加上了線性化偏壓的機制,藉著固定偏壓的方式來達成線性化之功能;此外,本論文同時設計一個無線性化機制的功率放大器來做對照。依據量測結果所示,有線性化的功率放大器可比無線性化的功率放大器多出6 dB的輸出功率1 dB壓縮點(P1dB),並可將功率附加效率由30% 改善至40%。
本論文中的另一主題為一分佈式平衡二倍頻器;在毫米波頻段,高頻的振盪訊號並不易實現,因此藉由壓控振盪器串接倍頻器的方式,可以容易實現低雜訊的高頻振盪訊號。由於目前可參考的文獻中,CMOS製程的寬頻的倍頻器較為少見。因此本電路利用台積電CMOS 0.13微米製程,成功實現一輸出頻率在40-76 GHz之二倍頻器,同時在設計中亦加上了反射器來改善轉換損耗。 此外,本論文亦使用台積電CMOS 0.13微米製程設計出2-40 GHz的主動平衡不平衡轉換器。此電路採用兩級差動對架構,利用前取得相位差180度的訊號,再利用後級補償兩輸出端的增益差,並在電流鏡下方加入立體電感,增加差動對共源級點到地的阻抗,因此可改善整體的增益差與相位差,這是目前參考文獻當中最寬頻的設計。 | zh_TW |
dc.description.abstract | A linearized power amplifier, a balanced distributed doubler, and an active balun are presented in this thesis. Power amplifiers are key components in the communication system, and they are usually put in the front-end of the transmitter to enlarge the RF signal, which is transmitted by the antenna. Therefore, to improve the linearity and efficiency of the power amplifier becomes important considerations. In this thesis, we present a 5.8GHz power amplifier with the linearizer in WIN 2-μm GaAs HBT Process. In the mean while, a power amplifier without the linearizer is designed to be compared. The measurement results show that the linearized power amplifier can improve output P1dB about 6 dB.
In millimeter-wave (MMW) frequencies, there are difficulties to implement fundamental frequency oscillators. Higher frequency sources can be obtained more easily by using low frequency oscillator cascaded with the doubler. However, few broadband doublers are reported in CMOS process up to now. In this thesis, a balanced distributed doubler is fabricated using TSMC 0.13-μm process. Based on the distributed and balanced structure, the doubler features a broadband width and a good fundamental rejection. Besides, reflectors added to the input terminations are also used to reduce the conversion loss of the doubler. A 2-40 GHz active balun was also designed in TSMC 0.13-μm process in this thesis. Using two-stage differential pairs structure, it achieves broadband performance. The first stage of the active balun was used to generate out-phase signals, and then the second stage of the active balun was used to compensate the magnitude imbalance. | en |
dc.description.provenance | Made available in DSpace on 2021-06-12T18:01:58Z (GMT). No. of bitstreams: 1 ntu-97-R94942072-1.pdf: 2353889 bytes, checksum: 65a8f25d35be94b72de5270c53734db6 (MD5) Previous issue date: 2008 | en |
dc.description.tableofcontents | 第一章 緒論................................1
1.1 背景與研究動機.........................1 1.2 相關研究發展...........................2 1.3 貢獻...................................4 1.4 章節概要...............................6 第二章 具有線性化機制的功率放大器之設計....7 2.1 概要...................................8 2.2 功率放大器基本概念簡介.................9 2.2.1 1dB壓縮點............................9 2.2.2功率增加率與汲極效率.................10 2.2.3負載調節法(Load Pull)................10 2.2.4 AM/AM與PM/PM........................11 2.2.5失真.................................12 2.2.6第三階交叉點IP3......................13 2.3具線性化偏壓5.8 GHz功率放大器之設計....14 2.3.1線性化理論...........................14 2.3.2線性化機制之原理.....................15 2.3.3線性化機制之設計.....................17 2.3.4 WIN 2 um GaAs HBT製程簡介...........21 2.3.5具線性化5.8 GHz 功率放大器之設計.....22 2.3.6具線性化偏壓5.8 GHz 功率放大器之 量測與模擬結果............................33 2.3.7結論.................................38 第三章 寬頻二倍頻器之設計.................40 3.1概要...................................41 3.2倍頻器基本概念.........................42 3.2.1二極體倍頻器.........................42 3.2.2電晶體倍頻器.........................43 3.2.3分佈式二倍頻器.......................44 3.3平衡分佈式二倍頻器.....................47 3.3.1製程介紹.............................47 3.3.2元件大小以及偏壓點選擇...............47 3.3.3電路設計.............................48 3.3.4量測結果.............................58 3.4討論...................................60 第四章 寬頻主動平衡不平衡轉換器之設計.....64 4.1概要...................................65 4.2主動式平衡不平衡轉換器基本概念.........66 4.2.1主動平衡不平衡轉換器電路設計.........68 4.3寬頻主動式平衡不平衡轉換器電路設計.....71 4.3.1電路設計.............................71 4.3.2量測結果.............................83 第五章 總結...............................88 參考文獻..................................90 | |
dc.language.iso | zh-TW | |
dc.title | 應用於微波與毫米波積體電路之研究 | zh_TW |
dc.title | Design of Microwave and Millimeter-wave Circuits | en |
dc.type | Thesis | |
dc.date.schoolyear | 96-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 林坤佑,張鴻埜,王琦學,蔡作敏 | |
dc.subject.keyword | 功率放大器,倍頻器,主動平衡不平衡轉換器, | zh_TW |
dc.subject.keyword | PA,doubler,active balun, | en |
dc.relation.page | 93 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2008-01-25 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
顯示於系所單位: | 電信工程學研究所 |
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