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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 張培仁 | |
dc.contributor.author | Xuan-Yu Wang | en |
dc.contributor.author | 王宣又 | zh_TW |
dc.date.accessioned | 2021-06-12T17:59:12Z | - |
dc.date.available | 2010-09-01 | |
dc.date.copyright | 2008-02-01 | |
dc.date.issued | 2008 | |
dc.date.submitted | 2008-01-29 | |
dc.identifier.citation | 1. Madou, M. J., Fundamentals of microfabrication CRC Press, 2002
2. 國科會精密儀器發展中心,微機電系統技術與應用,國科會精密儀器發展中心出版,2003 3. 呂學士、林佑昇,半導體製程,台商圖書有限公司,2003 4. 羅正忠、張鼎張,半導體製程技術導論,台灣培生教育出版股份有限公司,2005 5. Hsu, T. R., MEMS and microsystems design and manufacture, McGraw-Hill, 2002 6. 楊龍杰,認識微機電,滄海書局,2001 7. 澤田廉士、羽根ㄧ博、日暮栄治,光マイクロマシン,オーム社,2002 8. Fang, J., Wang, K., and Böhringer, K. F., “ Self-assembly of PZT actuators for micropumps with high process repeatability, ” J. Microelectromech. Syst., Vol. 15, pp. 871-878, 2006 9. Schabmueller, C. G. J., Koch, M., Mokhtari, M. E., Evans, A. G. R., Brunnschweiler, A., and Sehr, H., “ Self-aligning gas/liquid micropump, ” J. Micromech. Microeng. Vol. 12, pp. 420-424, 2002 10. Yoshimura, K., Kishimoto, M., and Suemune, T., “ Inkjet Printing Technology, ” OKI Technical Review, Vol. 64, pp. 41-44, 1998 11. Morita, T., Kurosawa, M. K., and Higuchi, T. “ A cylindrical shaped micro ultrasonic motor utilizing PZT thin film, ” Sensor. Actuat. A-Phys., Vol. 83, pp. 225-230, 2000 12. Kollias, A. T. and Avaritsiotis, J. N., “ A study on the performance of bending mode piezoelectric accelerometers, ” Sensor. Actuat. A-Phys., Vol. 121, pp. 434-442, 2005 13. 蕭富元,表面聲波元件壓電薄膜之研究及其應用,國立臺灣大學碩士論文,2001 14. 季君炎,表面聲波元件和積體電路整合之研究,國立臺灣大學碩士論文,2000 15. Abe, T. and Esashi, M., “ One-chip multichannel quartz crystal microbalance (QCM) fabricated by deep RIE, ” Sensor. Actuat. A-Phys., Vol. 82, pp. 139-143, 2000 16. Caliano, G., Lamberti, N., Iula, A., and Pappalardo, M., “ A piezoelectric bimorph static pressure sensor, ” Sensor. Actuat. A-Phys., Vol. 46, pp. 176-178, 1995 17. Zenner, H. P., Leysieffer, H., Maassen, M., Lehner, R., Lenarz, T., Baumann, J., et al, “ Human studies of a piezoelectric transducer and a microphone for a totally implantable electronic hearing device, ” Am. J. Otolaryng., Vol. 21 pp. 196-199, 2000 18. Park, J. H., Akedo, J., and Sato, H., “ High-speed metal-based optical microscanners using stainless-steel substrate and piezoelectric thick films prepared by aerosol deposition method, ” Sensor. Actuat. A-Phys., Vol. 135, pp. 86-91, 2007 19. Kanda, T., Morita, T., Kurosawa, M. K., and Higuchi, T., “ A flat type touch probe sensor using PZT thin film vibrator, ” Sensor. Actuat. A-Phys., Vol. 83, pp. 67-75, 2000 20. Liu, Y. T. and Wang, C. W., “ A self-moving precision positioning stage utilizing impact force of spring-mounted piezoelectric actuator, ” Sensor. Actuat. A-Phys., Vol. 102, pp. 83-92, 2000 21. Arakawa, M., Kushibiki, J., Ohashi, Y. and Suzuki, K., “ Accurate velocity measurement of periodic striae of TiO2-SiO2 glasses by the line-focus-beam ultrasonic material-chracterization system, ” Jpn. J. Appl. Phys., Vol. 45, No. 11 pp. 8925-8927, 2006 22. Jeon, Y. B., Sood, R., Jeong, J. H., and Kim, S. G., “ MEMS power generator with transverse mode thin film PZT, ” Sensor. Actuat. A-Phys., Vol. 122, pp. 16-22, 2005 23. Kim, S. K. and Seo, Y. H., “ Fabrication and characterization of the piezoelectric microtransformer based on microelectromechanical systems, ” Appl. Phys. Lett., Vol. 88, 263510, 2006 24. Vasic, D., Sarraute, E., Costa, F., Sangouard, P., and Cattan, E., “ Piezoelectric micro-transformer based on PZT unimorph membrane, ” J. Micromech. Microeng., Vol. 14, pp. S90-S96, 2004 25. 張沛霖、鐘維烈,壓電材料與器件物理,山東科學技術出版社,1996 26. 蕭文欣,創新壓電變壓/換能器之理論與實驗:擬模態致動器及波傳設計理念之應用,國立臺灣大學碩士論文,2000 27. Lin, Y. C., Ono, T. and Esashi, M., “ Quartz fabrication and characterization of micromachined quartz-crystal cantilever for force sensing, ” J. Micromech. Microeng., Vol. 15, pp. 2426-2432, 2005 28. Hara, M., Kuypers, J., Abe, T. and Esashi, M., “ Surface micromachined AlN thin film 2GHz resonator for CMOS integration, ” Sensor. Actuat. A-Phys., Vol. 117 pp. 211-216, 2005 29. Park, S. H., Seo, B. C., Yoon, G., and Park, H. D., “ Two-step deposition process of piezoelectric ZnO film and its application for film bulk acoustic resonators, ” J. Vac. Sci. Tech. A, Vol. 18, pp. 2432-2436, 2000 30. Nashimoto, K., Moriyama, H., and Osakabe, E., “ Control of crystallinity in sol-gel derived epitaxial LiNbO3 thin films on sapphire, ” Jpn. J. App. Phys. Vol. 35, pp. 4936-4940, 1996 31. Tan, S., Gilbert, T., Hung, C. Y., Schlesinger, T. E., and Migliuolo, M., “ Sputter deposited c-oriented LiNbO3 thin films on SiO2, ” J. Appl. Phys., Vol. 79 pp. 3548-3553, 1996 32. Hu, W. S., Liu, Z. G., and Feng, D., “ The role of an electric field applied during pulsed laser deposition of LiNbO3 and LiTaO3 on the film orientation, ” J. Appl. Phys., Vol. 80, pp. 7089-7096, 1996 33. Pintilie, L., Boerasu, I., Gomes, M. J. M., and Pereira, M., “ Properties of Pb(Zr0.92Ti0.08 )O3 thin films deposited by sol–gel, ” Thin Solid Films, Vol. 458, pp. 114–120, 2004 34. Hata, T., Kawagoe, S., Zhang, W., Sasaki, K., and Yoshioka, Y., “ Proposal of new mixture target for PZT thin films by reactive sputtering, ” Vacuum, Vol. 51, pp. 665-671, 1998 35. Malyavanatham, G., O’Brien, D. T., Becker, M. F., Nichols, W. T., Keto, J. W., Kovar, D., et al, “ Thick films fabricated by laser ablation of PZT microparticles, ” J. Mater. Processing Tech., Vol. 168, pp. 273-279, 2005 36. Gentry, K. L., Zara, J. M., Bu, S. D., Eom, C. B., and Smith, S. W., “ Thick film sol gel PZT transducer using dip coating, ” 2000 IEEE Ultrason. Symp., pp. 977-980, 2000 37. Pu, X., Luo, W., Ding, A., Tian, H., and Qiu, P., “ Preparation of PZT thick films by one-step firing sol-gel process, ” Mater. Res. Bull., Vol. 36, pp. 1471-1478, 2001 38. Jacobsen, H., Quenzer, H. J., Wagner, B., Ortner, K., and Jung, T., “ High-rate sputtering of thick PZT layers for MEMS actuators, ” Proc. IEEE MEMS ’06 Conf., pp. 214-217, 2006 39. Wang, S. N., Li, J. F., Toda, R., Watanabe, R., Minami, K., and Esashi, M., “ Novel processing of high aspect ratio 1-3 structures of high density PZT, ” Proc. IEEE MEMS ’98 Conf., pp. 223-228, 1998 40. Dorey, R. A., Whatmore, R. W., Beeby, S. P., Torah, R. N., and White, N. M., “ Screen printed PZT thick films using composite film technology,” Integr. Ferroelectr., Vol. 54, pp. 651-658, 2003 41. Kanda, T., Kurosawab, M. K., Yasuia, H., and Higuchi, T., “ Performance of hydrothermal PZT film on high intensity operation, ” Sensor. Actuat. A-Phys., Vol. 89, pp. 16-21, 2001 42. Akedo, J., Ichiki, M., Kikuchi, K., and Maeda, R., “ Jet molding system for realization of three-dimensional micro-structures, ” Sensor. Actuat. A-Phys., Vol. 69, pp. 106-112, 1998 43. 周卓明,壓電力學,全華科技圖書股份有限公司,2003 44. Xu, Y. H., Ferroelectric materials and their applications, North-Holland New York, 1991 45. 汪健民等編,陶瓷技術手冊(上),全華科技圖書股份有限公司,1994 46. 吳朗,電子陶瓷:壓電陶瓷,全欣資訊圖書股份有限公司,1994 47. Uchino, K., Ferroelectric device, Marcel Dekker, 2000 48. Cady, W. G., Piezoelectricity, Vol. I, Dover New York, 1964 49. Ichinose, N.著,陳皇鈞、劉坤靈譯,精密陶瓷導論,曉園出版社,1992 50. 張福學、王麗坤等編,現代壓電學(下),科學出版社,2003 51. Park, D., Cho, M., and Cho, W., “ Micro-grooving of glass using micro-abrasive jet machining, ” J. Mater. Process. Tech., Vol. 146, pp. 234-240, 2004 52. 陳立春,脆性材料微孔噴蝕製程之研究,國立臺灣大學博士論文,2005 53. Akedo, J. “ Aerosol deposition method for fabrication of nano crystal ceramic layer, ” Mater. Sci. Forum, Vol. 449-452, pp. 43-48, 2004 54. 蕭威典,熔射覆膜技術,全華科技圖書股份有限公司,2006 55. http://www.gordonengland.co.uk/ 56. Ichiki, M., Akedo, J., Schroth, A., Maeda, R., and Ishikawa, Y., “ X-ray diffraction and scanning electron microscopy observation of lead zirconate titanate thick film formed by gas deposition method, ” Jpn. J. Appl. Phys., Vol. 36, pp. 5815-5819, 1997 57. Schroth, A., Ichiki, M., Akedo, J., Tanaka, M., and Maeda, R., “ Properties and application of jet printed piezoelectric PZT film for actuation purposes, ” Proc. IEEE MHS 1997, pp. 67-72, 1997 58. Akedo, J. and Lebedev, M., “ Microstructure and electrical properties of lead zirconate titanate (Pb(Zr52/Ti48)O3) thick films deposited by aerosol deposition method, ” Jpn. J. Appl. Phys., Vol. 38, pp. 5397-5401, 1999 59. Lebedev, M., Akedo, J., and Akiyama Y., “ Actuation properties of lead zirconate titanate thick films structured on Si membrance by the aerosol deposition method, ” Jpn. J. Appl. Phys., Vol. 39, pp. 225-230, 2000 60. Akedo, J. and Lebedev, M., “ Influence of carrier gas conditions on electrical and optical properties of Pb(Zr, Ti)O3 thicn films prepared by aerosol deposition method, ” Jpn. J. Appl. Phys., Vol. 40, pp. 5528-5532, 2001 61. Lebedev, M. and Akedo, J., “ Effect of thickness on the piezoelectric properties of lead zirconate titanate films fabricated by aerosol deposition method, ” Jpn. J. Appl. Phys., Vol. 41, pp. 6669-6673, 2002 62. Akedo, J. and Lebedev, M., “ Effects of annealing and poling conditions on piezoelectric properties of Pb(Zr0.52Ti0.48)O3 thick films formed by aerosol deposition method, ” J. Crystal Growt, Vol. 235, pp. 415-420, 2002 63. Akedo, J. and Lebedev, M., “ Powder preparation in aerosol deposition method for lead zirconate titanate thick films, ” Jpn. J. Appl. Phys,. Vol. 41, pp. 6980-6984, 2002 64. Lebedev, M. and Akedo, J., “ What thickness of the piezoelectric layer with high breakdown voltage is required for the microactuator?, ” Jpn. J. Appl. Phys., Vol.41 pp.3344-3347, 2002 65. Lebedev, M. and Akedo, J., “ Patterning properties of PZT Thick Films Made by Aerosol Deposition, ” Ferroelectric Vol.270, pp.117-122, 2002 66. Akedo, J., Lebedev, M., and Baba, S., “ Aerosol deposition method for preparation of lead zirconate titanate thick layer at low temperature – improvement of electrical properties by irradiation of fast atom beam and plasma, ” Jpn. J. Appl. Phys. Vol.42, pp.5931-5935, 2003 67. Baba, S. and Akedo, J. “ Damage-free and short annealing of Pb(Zr, Ti)O3 thick films directly deposited on stainless steel sheet by aerosol deposition with CO2 laser radiation, ” J. Am. Ceram. Soc., Vol.88, pp.1407-1410, 2005 68. Akedo, J. “ Aerosol deposition of ceramic thick films at room temperature: densification mechanism of ceramic layers, ” J. Am. Ceram. Soc., Vol.89 pp.1834-1839, 2006 69. Baba, S., Akedo, J., Tsukamoto, M., and Abe, N., “ Effect of carrier gas species on ferroelectric properties of PZT/stainless-steel fabricated by CO2 laser-assisted aerosol deposition ,” J. Am. Ceram. Soc., Vol. 89, pp.1736-1738, 2006 70. 産業技術総合研究所先進製造プロセス研究部門:http://unit.aist.go.jp/amri/ 71. 王士杰,氣膠電漿鍍膜法製備鋯鈦酸鉛Pb(Zr0.52Ti0.48)O3厚膜之研究,國立台北科技大學碩士論文,2003 72. 王士杰,彭成鑑,王錫福,“ Microstructure and electrical properties analysis of lead zirconate titanate thick films deposited by aerosol deposition method ”,中國材料科學學會,pp.126-129,2002 73. Huang, C. M., Wang, S. F., Peng, C. J., Shieh, J., Chang, C. S. and Lin, T. S., “ Microstructures and dielectric properties of PZT thick films prepared by aerosol plasma deposition with microwave annealing, ” Mater. Sci. Eng. B, Vol. 133, pp. 181-185, 2006 74. Freund, L. B. and Suresh, S., Thin film materials: stress, defect formation, and surface evolution, Cambridge University Press, 2007 75. 金原粲、白木靖寬、吉田貞史 2003 薄膜工学 丸善株式会社 76. 祁景玉,X射線結構分析,同濟大學出版社,2003 77. Hoeft, D., ALatella, B., and Short, K. T., “ Residual stress and cracking in expanded austenite layers, ” J. Phys. Condens. Matter, Vol. 17, pp. 3547–3558, 2005 78. ANSI/IEEE Standard 176, Piezoelectricity, IEEE New York, 1987 79. 陳世春,基本壓電材料學,復漢出版社,2001 80. Zheng K., Lu J., and Chu J., “ A novel wet etching process of Pb(Zr, Ti)O3 thin films for applications in microelectromechanical system, ” Jpn. J. Appl. Phys., Vol. 43, pp. 3934-3937, 2004 81. Beeby S. B., Blackburn A., and White N. M., “ Processing of PZT piezoelectric thick films on silicon for microelectromechanical systems, ” J. Micromech. Microeng., Vol. 9, pp. 218-229, 1999 82. Zhao H. J., Ren T. L., Liu J. S., Liu L. T., and Li Z. J., “ Fabrication of high quality PZT thick film using lift-off technique, “ Proc. Nanotech 2003, pp. 502-505, 2003 83. Futai N., Matsumoto K., and Shimoyama I., “ Fabrication of high-aspect-ratio PZT thick film structure using sol-gel technique and SU-8 photoresist, “ Proc. MEMS 2002, pp. 168-171, 2002 84. Choe S. H., Tanaka S., and Esashi M., “MEMS-based probe array for wafer level LSI testing transferred onto low CTE LTCC substrate by Au/Sn eutectic bonding, “ Proc. Transducers 2007 pp. 2517-2520, 2007 85. Park J. S., Park H. D., Kang S. G., “ Fabrication and properties of PZT micro cantilevers using isotropic silicon dry etching process by XeF2 gas for release process, ” Sensor. Actuat. A-Phys., Vol. 117, pp. 1-7, 2005 86. Gao P., Yao K., Tang X., He X., Shannigrahi S., Lou Y., Zang J., and Okada K., “ A piezoelectric micro-actuator with a three-dimensional structure and its micro-fabrication, ” Sensor. Actuat. A-Phys., Vol. 130-131, pp. 491-496, 2006 87. Tzou H. S. and Yang R. J., “ Nonlinear piezothermoelastic shell theory applied to control of variable-geometry shells, ” J. Theor. Appl. Mech., Vol. 38 pp. 623-644, 2000 88. Tzou H. S. and Wang D. W., “ Micro-sensing characteristics and modal voltages of linear/non-linear toroidal shells, ” J. Sound Vibrat., Vol. 254(2) pp. 203-218, 2002 89. Li C., Lee S., Gorton A., Schulz M. J., and Ahn C. H., “ Dome or bump-shaped PVDF-TrFE films developed with a new mold-transfer method for flexible tactile sensors, ” Proc. IEEE MEMS ’07 Conf., pp. 337-340, 2007 90. 周卓明,層狀壓電薄殼之研究:設計、製造與實驗,國立臺灣大學博士論文,1997 91. 陳雅媚,電計算軟體的發展與壓電變壓器的分析,國立臺灣大學碩士論文,2004 92. Rosen C. A., “ Ceramic transformers and filters, ” Proc. Electronic Comp. Symp. pp. 205-211, 1956 93. Rosen C. A., “ Piezoelectric transformer, ” US Patent, No. 2830274, 1958 94. Lee C. K. and Moon F. C., “ Modal sensors/actuators, ” ASME J. Appl. Mech,. Vol. 57, pp. 434-441, 1990 95. Lee C. K., “ Piezoelectric laminates: theory and experiment for distributed sensors and actuators, ” Intelligent structural systems ed. By Tzou H S and Anderson G L Kluwer, Academic Publishers Dorderecht the Netherlands, pp. 75-168, 1992 96. 林逸彥,壓電變壓器設計流程相關之理論建模與實驗應證,國立臺灣大學碩士論文,2004 97. 許聿翔,壓電系統其力電場互動之理論與實驗¬¬¬¬¬¬¬¬—壓電變壓器、柔性結構控制、及自由落體感應子之創新突破基礎,國立臺灣大學碩士論文,2002 98. Nakada M., Ohashi K., Lebedev M., and Akedo J., “ Electro-optical properties of (Pb, Lb)(Zr, Ti)O3 films prepared by aerosol deposition method, ” Jpn. J. Appl. Phys. Vol. 42, pp. 5960-5962, 2003 99. Royer D., and Dieulesaint E., Elastic Wave in SolidsⅠ Springer,, 1999 100. Choi J. J., Hahn B. D., Ryu J., Yoon W. H., and Park D. S., “ Effects of Pb(Zn1/3Nb2/3)O3 addition and postannealing temperature on the electrical properties of Pb(ZrxTi1−x)O3 thick films prepared by aerosol deposition method, ” J. Appl. Phys., Vol. 102, 044101, 2007 101. Ryu J., Choi J. J., Hahn B. D., Park D. S., Yoon W. H., and Kim K. H., “ Fabrication and ferroelectric properties of highly dense lead-free piezoelectric (K0.5Na0.5)NbO3 thick films by aerosol deposition, ” Appl. Phys. Lett., Vol. 90, 152901, 2007 102. Rosenbaum J. F., Bulk Acoustic Wave Theory and Device, Artech House Inc., 1988 103. Chou C. C., Tsai S. D., Tu W. H., Yeh-Liu Y. E., and Tsai H. L., “ Low temperature processing of sol-gel derived Pb(Zr, Ti)O3 thick films using CO2 laser annealing, ” J. Sol-Gel Sci. Techn., Vol. 42, pp. 315-322, 2007 104. Pan H. C., Chou C. C., and Tsai H. L., “ Low temperature process of sol-gel derived La0.5Sr0.5MnO3 buffer electrode and PbZr0.52Ti0.48O3 films using CO2 laser annealing, ” Appl. Phys. Lett., Vol. 83, pp. 3156-3158, 2003 105. 蔡昇達,二氧化碳雷射處理鋯鈦酸鉛鐵電厚膜於不同基材之電性研究,國立臺灣科技大學碩士論文,2007 106. Tsai S. D., Suresh M. B., and Chou C. C., “ Improvement in ferroelectric properties of PZT thick films prepared by a modified sol-gel technique using low temperature laser annealing, ” Phys. Scripta, T129, pp. 175-179, 2007 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/27253 | - |
dc.description.abstract | 本研究發展一套鋯鈦酸鉛(PbTixZr1-xO3, PZT)低溫厚膜微製程技術。 首先建立用來沈積PZT厚膜的氣膠沈積法(aerosol deposition method)設備,此法可在室溫下沈積具有鈣鈦礦晶相(perovskite crystal phase)的PZT膜,在50 x 70 mm2的面積下可達2-10 μm/hr之高速沈積,所沈積之PZT膜在經過650 oC退火後,其材料性質約為其塊材的三分之ㄧ,相對介電常數ε33與壓電常數d31分別為420與-45 pm/V。 本研究以氣膠沈積法為核心,開發出一套於矽基材上製作PZT厚膜共振器的製程,其中最重要的技術在於PZT厚膜微結構的圖形定義,在此選擇負光阻THB-151N作為犧牲層,以舉離法(lift-off method)作為圖形定義方式,使13 μm厚的PZT結構具有最小線寬達30 μm,且可製作出多種微米級複雜結構,包含雙層PZT三維結構;另外利用石蠟作為犧牲層可製作出PZT半球殼微結構。 在實際製作PZT厚膜共振器方面,4 x 400 x 1000 μm3的PZT微懸臂樑與直徑1500 μm的彎曲型四支撐微壓電變壓器被製作出,懸臂樑利用390 oC、450 oC、550 oC以及650 oC進行退火並量測電訊號,在最低溫390 oC退火下仍可獲得具有壓電性的懸臂樑元件,使本技術具有與CMOS製程整合的可能性,最後在壓電變壓器製作方面,以四支撐樑的圓盤型彎曲變壓器做設計,得到最大升壓比為0.58。 | zh_TW |
dc.description.abstract | This dissertation presents a low-temperature lead-zirconate-titanate (PZT) thick film microfabrication process using aerosol deposition method. The equipment of aerosol deposition has been constructed to deposit the PZT thick film for this research. The PZT film is deposited at room temperature and already has perovskite crystal phase. An ultra high deposition rate 2-10 μm/h can be achieved in a 50 x 70 mm2 deposition area. While the PZT film was annealed by 650 oC for 3 hours, the material quality of the PZT film was about 1/3 compared to its bulk sample. The relative dielectric constant ε33 and piezoelectric constant d31 were 420 and -45 pm/V, respectively. To set up a silicon-based fabrication process of PZT thick film resonators, a special lift-off pattern method has been developed for aerosol deposition method. The negative photoresist THB-151N was selected as the suitable sacrificial layer for lift-off method. In our process, the smallest line width of the PZT microstructure was limited to 30 μm when the thickness PZT film was 10 μm. Based on the developed techniques, PZT double-layer structures have also been fabricated by conducting twice lift-off processes. Besides, the hemisphere PZT shell structures can also be fabricated by paraffin wax. To realize the PZT transducer devices, the 4 x 400 x 1000 μm3 PZT micro-cantilever and the flexion piezoelectric transformer with 1500 μm in diameter have been fabricated. The cantilever was annealed by 4 different temperatures: 390 oC, 450 oC, 550 oC, and 650 oC. The cantilever still has piezoelectricity with the lowest annealing temperature 390 oC. This low temperature process is possible to combine with CMOS process. To improve the flexion transformer from a circumference fixed end bondary, a reduced constraint design with 4 legs was frabricated. The step up ratio is improved from 0.1 to 0.58. | en |
dc.description.provenance | Made available in DSpace on 2021-06-12T17:59:12Z (GMT). No. of bitstreams: 1 ntu-97-F91543031-1.pdf: 7012975 bytes, checksum: 0024be7745adfdea3d30c100e0bd0d2a (MD5) Previous issue date: 2008 | en |
dc.description.tableofcontents | 致謝……………………………………………….……………………………...i
摘要……….………………………………………….……………………………..iii Abstract…………………..…………………………….……………………………..v 目錄……………………………………………………………….…………………vii 圖目錄………………………………………………….………………..…………ix 表目錄………………………………………………….…………………………..xv 第一章 緒論…………………………………………….……..………...……………1 1.1研究動機………………………………………..……..……..………..……1 1.2文獻回顧………………………………………..……..………..…………2 1.2.1 壓電材料簡介………………………………...…….….…………2 1.2.2鋯鈦酸鉛(PZT) ………………………………..……….………4 1.2.3壓電常數…………………………………………..………………7 1.2.4極化處理……………………………………………………..……8 1.2.5常見PZT鍍膜技術簡介……………………………….…………9 1.2.6固-氣兩相流體應用.………………………………..……….…….13 1.3論文架構……………………………………….…………..….…………17 第二章 氣膠沈積設備建構…………………………………….…..……..………19 2.1氣膠沈積法簡介……………………………………….…...……………19 2.2氣膠電漿沈積法……………………………………….………...………24 2.3設備建構之研究……………………………….……………...…………28 2.3.1 AD設備操作………….…………………...………….…..………30 2.3.2 AD設備鍍膜特性….………………………...……….…..………34 2.4材料特性實驗分析…………….…………………….……..……………40 2.4.1 XRD量測…………………………………………….…..………45 2.4.2電滯曲線(P-E curve/hysteresis loop)量測…………..…………...52 2.4.3相對介電常數ε33/ε0與介電損失tanδ量測………..………...…53 2.4.4壓電常數d31量測……………………………………………..……54 第三章 PZT厚膜微機電相容製程研究……………………..……………………57 3.1 PZT厚膜微結構圖形定義技術..…………………..…………...……57 3.1.1 PZT厚膜以濕蝕刻製作圖形測試………………..…………...…61 3.1.2 PZT厚膜以舉離法製作圖形測試………………..……………... 62 3.2利用舉離法製作複雜PZT厚膜結構…………………..………………..70 3.3 三維PZT微結構製造技術..……………………………………………74 3.3.1 雙層PZT三維結構製作………………………..…………….…74 3.3.2 半球殼PZT三微結構製作………………………..……….……76 3.4 PZT厚膜懸浮結構標準製作流程………………………..……...………79 第四章 微壓電換能器設計、製造與實驗分析……………………..………………88 4.1 PZT懸臂樑製作…………………………………………...………………89 4.2彎曲型壓電變壓器設計………………..…………..….…………………96 第五章 結論與未來展望…………………………………..…….….……………105 5.1結論…………………………………….…………..……………………105 5.2未來展望……………………………………….…..……………………106 參考文獻…………………………………….………………..………………...…108 附錄……………..…………………………………..………………………………119 附錄A 雷射粉末粒徑分析實驗資料……………………..………….……119 附錄B 能量分散光譜儀實驗資料……………………...…………………122 附錄C 不同退火溫度所用時間變化資料……………...…………………124 | |
dc.language.iso | zh-TW | |
dc.title | 以氣膠沈積法建立鋯鈦酸鉛厚膜低溫微製程技術 | zh_TW |
dc.title | Study on the Low-Temperature PZT Thick Film Microfabrication Process Using Aerosol Deposition Method | en |
dc.type | Thesis | |
dc.date.schoolyear | 96-1 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 彭成鑑,黃榮堂,楊龍杰,胡毓忠,施文彬,李其源 | |
dc.subject.keyword | 鋯鈦酸鉛,壓電厚膜,壓電換能器,氣膠沈積法,低溫製程, | zh_TW |
dc.subject.keyword | PZT,piezoelectric thick film,piezoelectric transducer,aerosol deposition method,low temperature process, | en |
dc.relation.page | 124 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2008-01-29 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 應用力學研究所 | zh_TW |
顯示於系所單位: | 應用力學研究所 |
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